A Product Line of Diodes Incorporated ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS= -10V -3.9A 450mΩ @ VGS= -6.0V -3.4A -100V • Fast switching speed • Low gate drive • Low input capacitance • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications • • This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor control • DC-DC Converters • Power management functions • Uninterrupted power supply Case: TO252-3L Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approximate) • • • D D TO252-3L G D G Top View S S Equivalent Circuit Pin Out – Top View Ordering Information Product ZXMP10A17KTC Marking See below Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 Marking Information ZXMP 10A17 YYWW ZXMP10A17K Document Number DS32028 Rev. 2 - 2 ZXMP = Product Type Marking Code, Line 1 10A17 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 www.diodes.com December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A17K Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) TA = 70°C (Note 2) (Note 1) (Note 3) (Note 2) (Note3 ) ID IDM IS ISM Value -100 ±20 -3.9 -3.1 -2.4 -11.3 -8.7 -11.3 Unit V V Value 4.0 32.0 10.2 80.8 2.0 16.1 31 12.3 62 2.4 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 1) Power dissipation Linear derating factor (Note 2) PD (Note 5) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and storage temperature range Notes: (Note 1) (Note 2) (Note 5) (Note 4) RθJA RθJL TJ, TSTG W mW/°C °C/W °C/W °C 1. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 2. Same as note (1), except the device is measured at t ≤ 10 sec. 3. Same as note (1), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 4. Thermal resistance from junction to solder-point (at the end of the drain lead). 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. ZXMP10A17K Document Number DS32028 Rev. 2 - 2 2 of 8 www.diodes.com December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A17K Thermal Characteristics Limited 1 DC 1s 100ms 100m 1ms 25mm x 25mm 1oz FR4 10m 1 Limited 1 DC 1s 100ms 100m 10ms T amb=25°C 10 RDS(on) -ID Drain Current (A) -ID Drain Current (A) 10 RDS(on) 100µs 10ms T amb=25°C 10m 10 100 10 S a fe O p e ra tin g A re a 40 D=0.5 30 20 D=0.2 D=0.1 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 Thermal Resistance (°C/W) Thermal Resistance (°C/W) 50 25mm x 25mm 1oz FR4 1k 35 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1 100µ 1m 10m 100m 1 10 100 1k 25 20 10 D=0.1 D=0.2 D=0.05 5 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Transient Thermal Impedance 4.5 4.0 50mm x 50mm 2oz FR4 3.5 3.0 25mm x 25mm 1oz FR4 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Pulse Power Dissipation Document Number DS32028 Rev. 2 - 2 D=0.5 15 Pulse Width (s) ZXMP10A17K 50mm x 50mm 2oz FR4 Pulse Width (s) Max Power Dissipation (W) Max Power Dissipation (W) Single Pulse T amb=25°C T amb=25°C 30 Pulse Width (s) T ra n s ie n t T h e rm a l Im p e d a n c e 100 100 -VDS Drain-Source Voltage (V) Safe Operating Area T amb=25°C 100µs 1 -VDS Drain-Source Voltage (V) 60 1ms 50mm x 50mm 2oz FR4 Derating Curve 3 of 8 www.diodes.com December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A17K Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -100 ⎯ ⎯ V ID = -250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.5 μA VDS= -100V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V VGS(th) -2.0 ⎯ -4.0 V ID= -250μA, VDS= VGS ON CHARACTERISTICS Gate Threshold Voltage VGS= -10V, ID= -1.4A RDS (ON) ⎯ Forward Transconductance (Notes 6 & 7) gfs ⎯ 2.8 ⎯ S VDS= -15V, ID= -1.4A Diode Forward Voltage (Note 6) VSD ⎯ -0.85 -0.95 V IS= -1.7A, VGS= 0V Reverse recovery time (Note 7) trr 33 ⎯ ns Reverse recovery charge (Note 7) Qrr ⎯ 48 ⎯ nC Input Capacitance Ciss ⎯ 424 ⎯ pF Output Capacitance Coss ⎯ 36.6 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 29.8 ⎯ pF Total Gate Charge (Note 8) Qg ⎯ 7.1 ⎯ nC Total Gate Charge (Note 8) Qg ⎯ 10.7 ⎯ nC Gate-Source Charge (Note 8) Qgs ⎯ 1.7 ⎯ nC Gate-Drain Charge (Note 8) Qgd ⎯ 3.8 ⎯ nC Turn-On Delay Time (Note 8) tD(on) ⎯ 3.0 ⎯ ns Turn-On Rise Time (Note 8) tr ⎯ 3.5 ⎯ ns Turn-Off Delay Time (Note 8) tD(off) ⎯ 13.4 ⎯ ns tf ⎯ 7.2 ⎯ ns Static Drain-Source On-Resistance (Note 6) ⎯ 0.350 0.450 Ω VGS= -6V, ID= -1.2A IS= -1.5A, di/dt= 100A/μs DYNAMIC CHARACTERISTICS (Note 7) Turn-Off Fall Time (Note 8) Notes: VDS= -50V, VGS= 0V f= 1MHz VGS= -6.0V VGS= -10V VDS= -50V ID= -1.4A VDD= -50V, VGS= -10V ID= -1A, RG ≅ 6.0Ω 6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 7. For design aid only, not subject to production testing. 8. Switching characteristics are independent of operating junction temperatures. ZXMP10A17K Document Number DS32028 Rev. 2 - 2 4 of 8 www.diodes.com December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A17K 10 10V T = 25°C 7V 10 -ID Drain Current (A) -ID Drain Current (A) Typical Characteristics 5V 1 4.5V 4V 0.1 10V T = 150°C 7V 5V 4.5V 4V 1 3.5V 0.1 0.01 -VGS 0.01 3V -VGS 1E-3 0.1 1 10 0.1 1 10 -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150°C T = 25°C 0.1 -VDS = 10V 0.01 RDS(on) Drain-Source On-Resistance (Ω) 3 4 5 VGS = -10V 1.8 ID = - 1.4A 1.6 RDS(on) 1.4 1.2 1.0 VGS(th) 0.8 VGS = VDS 0.6 ID = -250uA -50 0 50 100 -VGS Gate-Source Voltage (V) Tj Junction Temperature (°C) Typical Transfer Characteristics Normalised Curves v Temperature 100 -VGS 4V T = 25°C 4.5V 10 5V 1 7V 10V 0.01 0.1 1 10 -ID Drain Current (A) On-Resistance v Drain Current ZXMP10A17K Document Number DS32028 Rev. 2 - 2 -ISD Reverse Drain Current (A) -ID Drain Current (A) 1 Normalised RDS(on) and VGS(th) 2.0 150 10 T = 150°C 1 T = 25°C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A17K Typical Characteristics - continued C Capacitance (pF) VGS = 0V f = 1MHz 500 CISS 400 300 COSS 200 100 CRSS 0 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage -VGS Gate-Source Voltage (V) 10 600 8 6 4 VDS = -50V 2 ID = -1.4A 0 0 2 4 6 8 10 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS tr td(of ) t(on) tr t(on) Switching time waveforms ZXMP10A17K Document Number DS32028 Rev. 2 - 2 Pulse width ⬍ 1S Duty factor 0.1% td(on) Switching time test circuit 6 of 8 www.diodes.com December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A17K Package Outline Dimensions DIM A A1 b b2 b3 c c2 D D1 E E1 Inches Min 0.086 0.020 0.030 0.205 0.018 0.018 0.213 0.205 0.250 0.170 Max 0.094 0.005 0.035 0.045 0.215 0.024 0.023 0.245 0.265 - Millimeters Min Max 2.18 2.39 0.127 0.508 0.89 0.762 1.14 5.21 5.46 0.457 0.61 0.457 0.584 5.41 6.22 5.21 6.35 6.73 4.32 - DIM Inches Min Max 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.065 0.025 0.040 0.045 0.060 0° 10° 0° 15° - e H L L1 L2 L3 L4 L5 θ1° θ° - Millimeters Min Max 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.508 BSC 0.89 1.65 0.635 1.016 1.14 1.52 0° 10° 0° 15° - Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 ZXMP10A17K Document Number DS32028 Rev. 2 - 2 7 of 8 www.diodes.com 6.17 0.243 mm inches December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A17K IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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