A Product Line of Diodes Incorporated DMN3020LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 20mΩ @ VGS= 10V 16.7A 34mΩ @ VGS= 4.5V 12.6A • Low on-resistance • Fast switching speed • “Green” Component and RoHS compliant 30V Mechanical Data • Case: TO252-3L Description and Applications • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case Material: Molded Plastic “Green” Molding Compound, UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Backlighting • Marking Information: See Below • DC-DC Converters • • Ordering Information: See Below Power management functions • Weight: 0.33 grams (approximate) D D G S D G TOP VIEW Ordering Information Product DMN3020LK3-13 Notes: S PIN OUT -TOP VIEW Equivalent Circuit (Note 1) Marking N3020L Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information YYWW N3020L DMN3020LK3 Document Revision: 2 = Manufacturer’s Marking N3020L = Product Type Marking Code YYWW = Date Code Marking YY = Last two digits of year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3020LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA=70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value 30 ±20 16.7 13.3 11.3 51 12 51 Unit V V Value 4.1 32.5 8.9 71.4 2.17 17.4 30.8 14.0 57.6 2.24 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 2) Power dissipation Linear derating factor (Note 3) PD (Note 5) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Note 2) (Note 3) (Note 5) (Note 6) RθJA RθJL TJ, TSTG W mW/°C °C/W °C/W °C 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). DMN3020LK3 Document Revision: 2 2 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3020LK3 Thermal Characteristics RDS(on) ID Drain Current (A) ID Drain Current (A) RDS(on) 10 Limit DC 1 1s 100ms 100m T amb=25°C 10m 100m DC 1 1s 100ms 100m 10ms 1ms 25mm x 25mm 1oz FR4 Limit 10 100µs 1 10 10ms T amb=25°C 1ms 50mm x 50mm 2oz FR4 10m 0.1 100µs 1 VDS Drain-Source Voltage (V) 10 VDS Drain-Source Voltage (V) Safe Operating Area Safe Operating Area T amb=25°C 50 25mm x 25mm 1oz FR4 40 D=0.5 30 20 D=0.1 D=0.2 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (°C/W) Thermal Resistance (°C/W) 35 60 Transient Thermal Impedance T amb=25°C 30 50mm x 50mm 2oz FR4 25 20 D=0.5 15 D=0.1 D=0.2 10 D=0.05 5 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance 100 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Max Power Dissipation (W) 4.5 Single Pulse T amb=25°C 4.0 50mm x 50mm 2oz FR4 3.5 3.0 25mm x 25mm 1oz FR4 2.5 2.0 1.5 1.0 0.5 0.0 0 Pulse Power Dissipation DMN3020LK3 Document Revision: 2 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3020LK3 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V ID = 250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS= 30V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V VGS(th) 1.0 ⎯ 3.0 V ID= 250μA, VDS= VGS RDS (ON) ⎯ ⎯ ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 7) 0.020 0.034 Ω VGS= 10V, ID= 7.0A VGS= 4.5V, ID= 6.0A gfs ⎯ 16.5 ⎯ S VDS= 15V, ID= 7.1A Diode Forward Voltage (Note 7) VSD ⎯ 0.82 1.2 V IS= 1.7A, VGS= 0V Reverse recovery time (Note 8) trr 12 ⎯ ns Reverse recovery charge (Note 8) Qrr ⎯ 4.8 ⎯ nC Input Capacitance Ciss ⎯ 608 ⎯ pF Output Capacitance Coss ⎯ 132 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 71 ⎯ pF Total Gate Charge Qg ⎯ 6.3 ⎯ nC Total Gate Charge Qg ⎯ 12.9 ⎯ nC Gate-Source Charge Qgs ⎯ 2.5 ⎯ nC Gate-Drain Charge Qgd ⎯ 2.5 ⎯ nC Turn-On Delay Time (Note 9) tD(on) ⎯ 2.9 ⎯ ns Turn-On Rise Time (Note 9) tr ⎯ 3.3 ⎯ ns Turn-Off Delay Time (Note 9) tD(off) ⎯ 16 ⎯ ns tf ⎯ 8 ⎯ ns Forward Transconductance (Notes 7 & 8) IS= 2.2A, di/dt= 100A/μs DYNAMIC CHARACTERISTICS (Note 8) Turn-Off Fall Time (Note 9) Notes: VDS= 15V, VGS= 0V f= 1MHz VDS= 15V, VGS= 4.5V ID= 7A VDS= 15V, VGS= 10V ID= 7A VDD= 15V, VGS= 10V ID= 1A, RG ≅ 6.0Ω 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. DMN3020LK3 Document Revision: 2 4 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3020LK3 Typical Characteristics 5V 10 ID Drain Current (A) T = 150°C 4V 3.5V 3V 1 0.1 2.5V VGS T = 25°C 10V VGS 4V 3.5V 10 ID Drain Current (A) 10V 3V 2.5V 1 2V 0.1 1.5V 0.01 0.01 0.1 1 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics ID Drain Current (A) VDS = 10V T = 150°C 1 T = 25°C 0.1 2 3 4 VGS Gate-Source Voltage (V) DMN3020LK3 Document Revision: 2 1000 2.5V VGS T = 25°C 100 3V 10 3.5V 1 4V 0.1 0.01 0.01 4.5V 10V 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current VGS = 10V 1.4 ID = 7A RDS(on) 1.2 1.0 0.8 VGS(th) VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (W) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) 1.6 10 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = -3V 1E-3 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3020LK3 Typical Characteristics - continued VGS = 0V C Capacitance (pF) 800 f = 1MHz 700 600 CISS 500 COSS 400 CRSS 300 200 100 0 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) 900 10 9 8 7 6 5 4 3 2 1 0 ID = 7A VDS = 15V 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN3020LK3 Document Revision: 2 Switching time test circuit 6 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3020LK3 Package Outline Dimensions DIM Inches Millimeters DIM Inches Min Max Min Max A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016 D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52 D1 0.205 - 5.21 - θ1° 0° 10° 0° 10° E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15° E1 0.170 - 4.32 - - - - - - DMN3020LK3 Document Revision: 2 Min Millimeters 7 of 8 www.diodes.com Max Min 0.090 BSC Max 2.29 BSC July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3020LK3 Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 6.17 0.243 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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