T2500D Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. http://onsemi.com Features • Blocking Voltage 400 V • All Diffused and Glass Passivated Junctions for Greater Parameter TRIACS 6 AMPERES RMS 400 VOLTS Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal • • Resistance, High Heat Dissipation and Durability High Surge Current Capability 60 A Peak at TC = 80°C Pb−Free Package is Available* MT2 MT1 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (Sine Wave 50 to 60 Hz, TJ = −40 to +100°C, Gate Open) VDRM, VRRM 400 V On−State RMS Current (TC = +80°C) (Full Cycle Sine Wave 50 to 60 Hz) IT(RMS) 6.0 A Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) ITSM 60 A I2t 15 A2s PGM 16 W PG(AV) 0.2 W IGM 4.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.7 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +80°C, Pulse Width = 10 msec) Average Gate Power (TC = +80°C, t = 8.3 ms) Peak Gate Current (Pulse Width = 10 msec) MARKING DIAGRAM T2500DG AYWW TO−220AB CASE 221A STYLE 4 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM, VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device Package Shipping T2500D TO220AB 500 Units / Box T2500DG TO220AB (Pb−Free) 500 Units / Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 4 1 Publication Order Number: T2500/D T2500D ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Symbol Min Typ Max Unit IDRM, IRRM − − 10 2.0 mA mA Peak On-State Voltage (Note 2) (ITM = "30 A Peak) VTM − − 2.0 V Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IGT Gate Trigger Voltage (Continuous dc) (All Four Quadrants) (VD = 12 Vdc, RL = 100 W) Gate Non−Trigger Voltage (VD = 12 V, RL = 100 W, TC = 100°C) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current TJ = 25°C (Rated VDRM, VRRM; Gate Open) TJ = 100°C ON CHARACTERISTICS mA − − − − 10 20 15 30 25 60 25 60 VGT − 1.25 2.5 V VGD 0.2 − − V Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "200 mA) IH − 15 30 mA Gate Controlled Turn-On Time (Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 ms) tgt − 1.6 − ms dv/dt(c) − 10 − V/ms dv/dt − 75 − V/ms DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Commutation Voltage (Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms, Gate Unenergized, TC = 80°C) Critical Rate-of-Rise of Off-State Voltage (Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100°C) 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 T2500D Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III Quadrant 1 MainTerminal 2 + (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM T2500D PACKAGE DIMENSIONS TO−220 CASE 221A−07 ISSUE AA −T− B F T SEATING PLANE C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z 4 Q A 1 2 3 U H K Z R L V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. T2500/D