BTA25H-600CW3G, BTA25H-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • • • TRIACS 25 AMPERES RMS 600 thru 800 VOLTS Blocking Voltage to 800 Volts On-State Current Rating of 25 Amperes RMS at 95°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 500 V/ms minimum at 150°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package − Internally Isolated High Commutating dI/dt − 4.0 A/ms minimum at 150°C Internally Isolated (2500 VRMS) These are Pb−Free Devices MT2 MT1 G MARKING DIAGRAM 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 150°C, Sine Wave, 50 to 60 Hz, Gate Open) BTA25H−600CW3G BTA25H−800CW3G VDRM, VRRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 95°C) IT(RMS) 25 A ITSM 250 A I2t 260 A2sec VDSM/ VRSM VDRM/VRRM +100 V IGM 4.0 A PG(AV) 0.5 W Operating Junction Temperature Range TJ −40 to +150 °C Storage Temperature Range Tstg −40 to +150 °C RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) Viso 2500 V Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 8.3 ms) Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 8.3 ms) Peak Gate Current (TJ = 150°C, t ≤ 20 ms) Average Gate Power (TJ = 150°C) Value Unit V 1 600 800 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. HT BTA25−xCWG AYWW 3 TO−220AB CASE 221A STYLE 12 x A Y WW G = 6 or 8 = Assembly Location = Year = Work Week = Pb−Free Package 2 PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 No Connection ORDERING INFORMATION Device Package Shipping BTA25H−600CW3G TO−220AB (Pb−Free) 50 Units / Rail BTA25H−800CW3G TO−220AB (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2009 September, 2009 − Rev. 0 1 Publication Order Number: BTA25H−600CW3/D BTA25H−600CW3G, BTA25H−800CW3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case (AC) Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds Symbol Value Unit RqJC RqJA 1.8 60 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit − − − − 0.005 15 − − 1.55 − − − − − − 35 35 35 − − 50 − − − − − − 75 75 75 − − − − − − 1.3 1.3 1.3 0.15 0.15 0.15 − − − − − − (dI/dt)c 4.0 − − A/ms Critical Rate of Rise of On−State Current (TJ = 150°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt − − 50 A/ms Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 150°C) dV/dt 500 − − V/ms OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 150°C IDRM, IRRM mA ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = ± 35 A Peak) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = ±100 mA) IH Latching Current (VD = 12 V, IG = 42 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IL Gate Trigger Voltage (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) VGT Gate Non−Trigger Voltage (TJ = 150°C) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) VGD V mA mA mA V V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 150°C, No Snubber) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 BTA25H−600CW3G, BTA25H−800CW3G 30 140 PAV, AVERAGE POWER (W) TC, CASE TEMPERATURE (°C) 150 130 120 110 100 90 80 0 5 10 15 20 20 15 10 5 0 0 25 5 10 15 20 25 IT(RMS), RMS ON-STATE CURRENT (A) IT(RMS), ON-STATE CURRENT (A) Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation TJ = 25°C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1000 TJ = 150°C 100 100 10 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t, TIME (ms) Figure 4. Thermal Response 10 35 IH, HOLDING CURRENT (mA) IT, INSTANTANEOUS ON−STATE CURRENT (A) 25 1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 30 25 20 MT2 NEGATIVE 15 10 MT2 POSITIVE 5 0 −40 −20 4.0 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) VT, INSTANTANEOUS ON-STATE VOLTAGE (V) Figure 3. On-State Characteristics Figure 5. Hold Current Variation http://onsemi.com 3 140 160 BTA25H−600CW3G, BTA25H−800CW3G 1.30 20 VGT, GATE TRIGGER VOLTAGE (V) VD = 12 V RI = 30 W Q3 15 Q1 Q2 10 5 0 −40 −20 0 20 40 60 80 100 120 140 160 1.10 0.90 VD = 12 V RI = 30 W Q1 Q3 0.70 Q2 0.50 0.30 0.10 −40 −20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation 75 IL, LATCHING CURRENT (mA) VD = 12 V RI = 30 W 65 55 45 Q1 Q2 Q3 35 25 15 −40 −20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 8. Latching Current Voltage LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC CHARGE 1N4007 MEASURE I TRIGGER TRIGGER CONTROL IGT, GATE TRIGGER CURRENT (mA) 25 CHARGE CONTROL NON‐POLAR CL + 200 V MT2 1N914 51 W MT1 G Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 4 BTA25H−600CW3G, BTA25H−800CW3G Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 − IH off state VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 5 Quadrant 1 MainTerminal 2 + + Voltage IDRM at VDRM BTA25H−600CW3G, BTA25H−800CW3G PACKAGE DIMENSIONS TO−220 CASE 221A−07 ISSUE AA −T− B F 4 Q T SEATING PLANE C S A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 12: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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