BS209 DMOS Transistors (P-Channel) TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max. ∅ .022 (0.55) .098 (2.5) S D G MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Drain-Source Voltage –VDSS 400 V Drain-Gate Voltage –VDGS 400 V Gate-Source Voltage (pulsed) VGS ±20 V Drain Current (continuous) at Tamb = 25 °C –ID 120 mA Power Dissipation at Tamb = 25 °C Ptot 8301) mW Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Inverse Diode Symbol Value Unit Max. Forward Current (continuous) at Tamb = 25 °C IF 400 mA Forward Voltage Drop (typ.) at VGS = 0 V, IF = 400 mA, Tj = 25 °C VF 1.0 V 4/98 BS209 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 V –V(BR)DSS 400 430 – V Gate-Body Leakage Current, Forward at –VGSF = 20 V, VDS = 0 V –IGSSF – – 100 nA Gate-Body Leakage Current, Reverse at –VGSR = 20 V, VDS = 0 V –IGSSR – – 100 nA Drain Cutoff Current at –VDS = 400 V, VGS = 0 V –IDSS – – 500 nA Gate-Source Threshold Voltage at VGS = VDS, –ID = 250 µA –VGS(th) 1 1.5 2.5 V Drain-Source ON Resistance at –VGS = 5 V, –ID = 120 mA RDS(on) – 50 60 Ω Capacitance at –VDS = 25 V, VGS = 0, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance CiSS COSS CrSS – – – 200 30 10 – – – pF pF pF Switching Times at –VGS = 10 V, –VDS = 10 V, RD = 100 Ω Turn-On Time Turn-Off Time ton toff – – 10 50 – – ns ns Thermal Resistance Junction to Ambient Air RthJA – – 1501) K/W 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.