BC847PN BC847PN NPN PNP Complementary Surface Mount General Purpose Si-Planar Transistors Komplementäre Si-Planar Transistoren für die Oberflächenmontage NPN PNP Version 2006-09-05 2±0.1 2 x 0.65 5 Type Code 1 2 1.25±0.1 4 2.1±0.1 6 0.9±0.1 3 2.4 Dimensions - Maße [mm] 6 = C1 5 = B2 4 = E2 1 = E1 2 = B1 3 = C2 Power dissipation Verlustleistung 300 mW Plastic case Kunststoffgehäuse SOT-363 Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) per transistor – pro Transistor BC847PN Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCBO 45 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCEO 50 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEB0 6V Power dissipation – Verlustleistung Ptot 300 mW 1) Collector current – Kollektorstrom (dc) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis VCE = 5 V, IC = 2 mA T1 - NPN hFE 200 – 450 - VCE = 5 V, - IC = 2 mA T2 - PNP hFE 220 – 475 Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) 1 2 IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA T1 - NPN VCEsat VCEsat – – – – 250 mV 600 mV - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA T2 - PNP - VCEsat - VCEsat – – – – 300 mV 650 mV Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BC847PN Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA T1 - NPN VBEsat VBEsat – – 700 mV 900 mV – – - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA T2 - PNP - VBEsat - VBEsat – – 700 mV – – 950 mV IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V T1 - NPN VBE VBE 580 mV – – – 700 mV 720 mV - IC = 2 mA, - VCE = 5 V - IC = 10 mA, - VCE = 5 V T2 - PNP - VBE - VBE 600 mV – – – 750 mV 820 mV Base-Emitter-voltage – Basis-Emitter-Spannung 2) Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 30 V, (E open) T1 - NPN ICB0 – – 15 nA - VCB = 30 V, (E open) T2 - PNP - ICB0 – – 15 nA VEB = 5 V, (C open) T1 - NPN IEB0 – – 100 nA - VEB = 5 V, (C open) T2 - PNP - IEB0 – – 100 nA VCE = 5 V, IC = 10 mA, f = 100 MHz T1 - NPN fT 100 MHz – – - VCE = 5 V, - IC = 10 mA, f = 100 MHz T2 - PNP fT 100 MHz – – Emitter-Base cutoff current Gain-Bandwidth Product – Transitfrequenz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz T1 - NPN CCBO – – 6 pF - VCB = 10 V, IE =ie = 0, f = 1 MHz T2 - PNP CCBO – – 4.5 pF Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft < 420 K/W 1) RthA Pinning – Anschlussbelegung 6 T1: E1 = 1, C1 = 6, B1 = 2 T2: E2 = 4, C2 = 3, B2 = 5 2 4 T2 T1 1 2 1 5 2 3 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG