MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-15 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMBT2907 MMBT2907A 40 V 60 V Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 60 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) - IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis ) 2 - IC = 0.1 mA, - VCE = 10 V MMBT2907 MMBT2907A hFE hFE 35 75 – – – – - IC = 1 mA, - VCE = 10 V MMBT2907 MMBT2907A hFE hFE 50 100 – – – – - IC = 10 mA, - VCE = 10 V MMBT2907 MMBT2907A hFE hFE 75 100 – – – – - IC = 500 mA, - VCE = 10 V MMBT2907 MMBT2907A hFE hFE 30 50 – – – – hFE 100 – 300 – – – – 0.4 V 1.6 V - IC = 150 mA, - VCE = 10 V Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung ) 2 - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA 1 2 MMBT2907 MMBT2907A - VCEsat - VCEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 MMBT2907 / MMBT2907A Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - VCEsat - VCEsat – – – – 0.4 V 1.6 V - VBEsat - VBEsat – – – – 1.3 V 2.6 V - ICBO - ICBO – – – – 20 nA 10 nA - ICBO – – 20 µA fT 200 MHz – – CCBO – – 8 pF CEBO – – 30 pf ton – – 45 ns td – – 10 ns tr – – 40 ns toff – – 100 ns ts – – 80 ns tf – – 30 ns Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 150 mA, - IB = 15 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 50 V, (E open) MMBT2907 MMBT2907A - VCB = 50 V, Tj = 125°C, (E open) Gain-Bandwidth Product – Transitfrequenz - VCE = 20 V, - IC = 50 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 2 V, IC = ic = 0, f = 1 MHz Switching times – Schaltzeiten (between 10% and 90% levels) turn on delay time rise time turn off storage time fall time - VCC = 30 V, - VBE = 1.5 V - IC = 150 mA, - IB1 = 15mA - VCC = 30 V, - IC = 150 mA, - IB1 = - IB2 = 15 mA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung 2 1 2 RthA < 420 K/W 1) MMBT2222 / MMBT2222A MMBT2907 = 2B MMBT2907A = 2F Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG