PHILIPS MB2623

INTEGRATED CIRCUITS
MB2623
16-bit transceiver with dual enable,
non-inverting (3-State)
Product specification
Supersedes data of 1993 Aug 24
IC23 Data Handbook
1998 Jan 16
Philips Semiconductors
Product specification
16-bit transceiver with dual enable, non-inverting
(3-State)
FEATURES
MB2623
DESCRIPTION
• Two 8-bit bidirectional bus interfaces
• 3-State buffers
• Power-up 3-State
• Multiple VCC and GND pins minimize switching noise
• Output capability: +64mA/–32mA
• Latch-up protection exceeds 500mA per Jedec Std 17
• ESD protection exceeds 2000 V per MIL STD 883 Method 3015
The MB2623 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The MB2623 is a 16-bit transceiver featuring non-inverting 3-State
bus compatible outputs in both send and receive directions. The
MB2623 is designed for asynchronous two-way communication
between data buses.
The control function implementation allows for maximum flexibility in
timing. This device allows data transmission from the A bus to the B
bus or from the B bus to the A bus, depending upon the logic levels
at the Enable inputs (nOEBA and nOEAB). The Enable inputs can
be used to disable the device so that the buses are effectively
isolated.
and 200 V per Machine Model
• Inputs are disabled during 3-State mode
QUICK REFERENCE DATA
SYMBOL
CONDITIONS
Tamb = 25°C; GND = 0V
PARAMETER
TYPICAL
UNIT
3.2
3.1
ns
tPLH
tPHL
Propagation delay
nAx to nBx, or nBx to nAx
CL = 50pF; VCC = 5V
CIN
Input capacitance
VI = 0V or VCC
4
pF
CI/O
I/O capacitance
VO = 0V or VCC; 3-State
7
pF
ICCZ
Total supply current
Outputs disabled; VCC =5.5V
50
µA
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
OUTSIDE NORTH AMERICA
NORTH AMERICA
DWG NUMBER
–40°C to +85°C
MB2623 BB
MB2623 BB
SOT379-1
52–pin plastic Quad Flat Pack
52 51
50 49 48 47
46 45 44 43 42
1A3
1A2
GND
1A1
1A0
1OEBA
GND
1OEAB
1B0
PIN DESCRIPTION
1B1
GND
1B2
1B3
LOGIC SYMBOL
41 40
VCC
1
39 V
CC
1B4
2
38 1A4
1B5
3
37 1A5
GND
È
4
36 GND
1B6
5
35 1A6
1B7
6
GND
7
33 GND
2B0
8
32 2A0
2B1
9
31 2A1
È
52-pin PQFP
34 1A7
29 2A2
2B3 12
28 2A3
VCC 13
27 V
CC
1998 Jan 16
SYMBOL
FUNCTION
44, 43, 41, 40,
38, 37, 35, 34,
32, 31, 29, 28,
26, 25, 23, 22
1A0 – 1A7
2A0 – 2A7
Data inputs/outputs (A
side)
48, 49, 51, 52,
2, 3, 5, 6,
8, 9, 11, 12,
14, 15, 17, 18
1B0 – 1B7
2B0 – 2B7
Data inputs/outputs (B
side)
47, 19
1OEAB, 2OEAB
Output enable inputs
(active-High)
45, 21
1OEBA, 2OEBA
Output enable inputs
(active-Low)
4, 7, 10, 16,
20, 24, 30, 33,
36, 42, 46, 50
GND
Ground (0V)
1, 13, 27, 39
VCC
Positive supply voltage
26
2A4
2A5
GND
2A6
2A7
GND
2OEBA
2B7
21 22 23 2A5 25
GND
17 18 19 20
2B5
14 15 16
2OEBA
2B2 11
2B6
30 GND
2B4
GND 10
PIN NUMBER
SB00104
2
853–1575 18869
Philips Semiconductors
Product specification
16-bit transceiver with dual enable, non-inverting
(3-State)
FUNCTION TABLE
INPUTS
MB2623
PIN CONFIGURATION
OUTPUTS
nOEBA
nOEAB
nAx
nBx
L
L
A=B
Inputs
H
H
Inputs
B=A
H
L
Z
Z
L
H
A=B
H = High voltage level
L = Low voltage level
Z = High impedance “off” state
45
47
19
1OEBA
1OEAB
44
2OEBA
32
1A0
2A0
48
43
8
1B0
31
1A1
2B0
2A1
49
B=A
21
2OEAB
41
9
1B1
29
1A2
2B1
2A2
51
40
11
1B2
28
1A3
2B2
2A3
52
38
12
1B3
26
1A4
2B3
2A4
2
37
14
1B4
25
1A5
2B4
2A5
3
35
15
1B5
23
1A6
2B5
2A6
5
34
17
1B6
22
1A7
2B6
2A7
6
18
1B7
2B7
SB00105
LOGIC SYMBOL (IEEE/IEC)
47
EN1
19
EN1
45
EN2
21
EN2
44
1
32
1
48
2
43
41
10
38
37
35
34
8
2
49
31
51
29
52
28
2
26
3
25
5
23
6
22
9
11
12
14
15
17
18
SB00106
1998 Jan 16
3
Philips Semiconductors
Product specification
16-bit transceiver with dual enable, non-inverting
(3-State)
MB2623
ABSOLUTE MAXIMUM RATINGS1, 2
PARAMETER
SYMBOL
VCC
IIK
CONDITIONS
RATING
UNIT
–0.5 to +7.0
V
–18
mA
–1.2 to +7.0
V
VO < 0
–50
mA
output in Off or High state
–0.5 to +5.5
V
output in Low state
128
mA
–65 to 150
°C
DC supply voltage
DC input diode current
VI < 0
voltage3
VI
DC input
IOK
DC output diode current
voltage3
VOUT
DC output
IOUT
DC output current
Tstg
Storage temperature range
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC
PARAMETER
LIMITS
DC supply voltage
UNIT
Min
Max
4.5
5.5
V
0
VCC
V
VI
Input voltage
VIH
High-level input voltage
VIL
Low-level Input voltage
0.8
V
IOH
High-level output current
–32
mA
IOL
Low-level output current
64
mA
0
10
ns/V
–40
+85
°C
∆t/∆v
Input transition rise or fall rate
Tamb
operating free-air temperature range
1998 Jan 16
2.0
4
V
Philips Semiconductors
Product specification
16-bit transceiver with dual enable, non-inverting
(3-State)
MB2623
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Min
VIK
VOH
VOL
II
Input clamp voltage
High-level output voltage
Tamb = –40°C
to +85°C
Tamb = +25°C
VCC = 4.5V; IIK = –18mA
Typ
Max
–0.9
–1.2
Min
UNIT
Max
–1.2
V
VCC = 4.5V; IOH = –3mA; VI = VIL or VIH
2.5
2.9
2.5
V
VCC = 5.0V; IOH = –3mA; VI = VIL or VIH
3.0
3.4
3.0
V
VCC = 4.5V; IOH = –32mA; VI = VIL or VIH
2.0
2.4
2.0
V
Low-level output voltage
VCC = 4.5V; IOL = 64mA; VI = VIL or VIH
0.42
0.55
0.55
V
Input leakage
Control pins
VCC = 5.5V; VI = GND or 5.5V
±0.01
±1.0
±1.0
µA
current
Data pins
VCC = 5.5V; VI = GND or 5.5V
±5
±100
±100
µA
Power-off leakage current
VCC = 0.0V; VO or VI ≤ 4.5V
±5.0
±50
±50
µA
Power-up/down 3-State
output current
VCC = 2.0V; VO = 0.5V; VI = GND or VCC;
VOE = VCC; VOE = GND
±5.0
±100
±100
µA
IIH + IOZH
3-State output High current
VCC = 5.5V; VO = 2.7V; VI = VIL or VIH
5.0
50
50
µA
IIL + IOZL
3-State output Low current
VCC = 5.5V; VO = 0.5V; VI = VIL or VIH
–5.0
–50
–50
µA
Output High leakage current
VCC = 5.5V; VO = 5.5V; VI = GND or VCC
5.0
50
50
µA
–100
–180
–180
mA
VCC = 5.5V; Outputs High, VI = GND or VCC
50
100
100
µA
VCC = 5.5V; Outputs Low, VI = GND or VCC
48
60
60
mA
VCC = 5.5V; Outputs 3-State;
VI = GND or VCC
50
100
100
µA
VCC = 5.5V; one input at 3.4V,
other inputs at VCC or GND
0.5
1.5
1.5
mA
IOFF
IPU/IPD
ICEX
IO
Output
current1
ICCH
ICCL
Quiescent supply current
ICCZ
∆ICC
Additional supply current per
input pin2
VCC = 5.5V; VO = 2.5V
–50
–50
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
AC CHARACTERISTICS
GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω
LIMITS
SYMBOL
PARAMETER
Tamb = -40 to
+85oC
VCC = +5.0V ±0.5V
Tamb = +25oC
VCC = +5.0V
WAVEFORM
Min
Typ
Max
Min
Max
UNIT
tPLH
tPHL
Propagation delay
An to Bn or Bn to An
1
1.2
1.2
3.2
3.1
4.5
4.5
1.2
1.2
5.1
5.1
ns
tPZH
tPZL
Output enable time
to High and Low level
2
1.5
1.7
4.8
5.4
6.5
6.8
1.5
1.7
7.2
7.8
ns
tPHZ
tPLZ
Output disable time
from High and Low level
2
1.5
1.4
4.7
4.2
6.5
5.8
1.5
1.4
7.2
6.5
ns
1998 Jan 16
5
Philips Semiconductors
Product specification
16-bit transceiver with dual enable, non-inverting
(3-State)
MB2623
AC WAVEFORMS
VM = 1.5V, VIN = GND to 3.0V
nOEBA
INPUT
VM
VM
INPUT
nOEAB
INPUT
VM
VM
tPHL
OUTPUT
tPLH
tPLZ
tPZL
VM
VOL + 0.3V
VOL
tPHZ
tPZH
VM
VM
OUTPUT
3.5V
VOH
VOH – 0.3V
OUTPUT
VM
SB00044
0V
SB00107
Waveform 1. Waveforms Showing the Input to Output
Propagation Delays
Waveform 2. Waveforms Showing the 3-State Output Enable
and Disable Times
TEST CIRCUIT AND WAVEFORM
VCC
7.0V
RL
VOUT
VIN
PULSE
GENERATOR
tW
90%
NEGATIVE
PULSE
90%
CL
VM
VM
10%
10%
0V
D.U.T.
RT
RL
tTHL (tF)
tTLH (tR)
tTLH (tR)
tTHL (tF)
90%
POSITIVE
PULSE
Test Circuit for 3-State Outputs
AMP (V)
90%
VM
VM
10%
10%
tW
SWITCH POSITION
TEST
SWITCH
tPLZ
closed
tPZL
closed
All other
open
Load resistor; see AC CHARACTERISTICS for value.
CL =
Load capacitance includes jig and probe capacitance; see AC
CHARACTERISTICS for value.
RT =
Termination resistance should be equal to ZOUT of pulse generators.
0V
VM = 1.5V
Input Pulse Definition
INPUT PULSE REQUIREMENTS
DEFINITIONS
RL =
AMP (V)
FAMILY
MB
Amplitude
Rep. Rate
tW
tR
tF
3.0V
1MHz
500ns
2.5ns
2.5ns
SB00010
1998 Jan 16
6
Philips Semiconductors
Product specification
16-bit transceiver with dual enable, non-inverting
(3-State)
tPLH vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nAx to nBx
Adjustment of tPLH for
Load Capacitance and # of Outputs Switching
nAx to nBx
6
4
5
3
MAX
4
16 switching
8 switching
1 switching
2
Offset in ns
ns
MB2623
4.5VCC
5.5VCC
3
1
2
0
MIN
1
–1
0
–2
–55
–35
–15
5
25
45
65
85
105
125
0
50
°C
100
150
200
pF
tPHL vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nAx to nBx
Adjustment of tPHL for
Load Capacitance and # of Outputs Switching
nAx to nBx
7
4
6
3
16 switching
8 switching
1 switching
MAX
5
Offset in ns
2
4
ns
4.5VCC
5.5VCC
3
1
0
2
MIN
–1
1
0
–2
–55
–35
–15
5
25
45
65
85
105
125
0
50
°C
150
200
pF
tPZH vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nOEAB to nBx or nOEBA to nAx
Adjustment of tPZH for
Load Capacitance and # of Outputs Switching
nOEAB to nBx or nOEBA to nAx
9
5
7
MAX
6
4.5VCC
5.5VCC
5
Offset in ns
8
ns
100
4
4
16 switching
8 switching
3
1 switching
2
1
3
0
2
MIN
–1
1
0
–55
–2
–35
–15
5
25
45
65
85
105
125
0
°C
50
100
150
200
pF
SB00108
1998 Jan 16
7
Philips Semiconductors
Product specification
16-bit transceiver with dual enable, non-inverting
(3-State)
tPZL vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nOEAB to nBx or nOEBA to nAx
Adjustment of tPZL for
Load Capacitance and # of Outputs Switching
nOEAB to nBx or nOEBA to nAx
9
4
8
MAX
7
4.5VCC
5.5VCC
Offset in ns
6
5
ns
MB2623
4
3
16 switching
8 switching
2
1 switching
1
3
0
2
MIN
–1
1
0
–2
–55
–35
–15
5
25
45
65
85
105
125
0
50
°C
200
Adjustment of tPHZ for
Load Capacitance and # of Outputs Switching
nOEAB to nBx or nOEBA to nAx
9
6
8
5
MAX
7
4.5VCC
4
5.5VCC
3
Offset in ns
5
2
1
3
0
MIN
2
16 switching
8 switching
1 switching
4
6
ns
150
pF
tPHZ vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nOEAB to nBx or nOEBA to nAx
–1
1
0
–2
–55
–35
–15
5
25
45
65
85
105
125
0
50
°C
150
200
Adjustment of tPLZ for
Load Capacitance and # of Outputs Switching
nOEAB to nBx or nOEBA to nAx
8
6
7
16 switching
8 switching
1 switching
5
MAX
6
4
Offset in ns
5
4.5VCC
4
5.5VCC
3
MIN
2
3
2
1
0
1
–1
0
–55
100
pF
tPLZ vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nOEAB to nBx or nOEBA to nAx
ns
100
–2
–35
–15
5
25
45
65
85
105
125
0
°C
50
100
150
200
pF
SB00109
1998 Jan 16
8
Philips Semiconductors
Product specification
16-bit transceiver with dual enable, non-inverting
(3-State)
tTLH vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
MB2623
Adjustment of tTLH for
Load Capacitance and # of Outputs Switching
4
9
8
16 switching
8 switching
1 switching
7
6
3
5
ns
Offset in ns
4.5VCC
5.5VCC
2
4
3
2
1
0
–1
–2
1
–3
–55
–35
–15
5
25
45
65
85
105
125
0
50
°C
100
150
200
pF
tTHL vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
Adjustment of tTHL for
Load Capacitance and # of Outputs Switching
3.0
5
4
2.5
16 switching
8 switching
1 switching
Offset in ns
3
4.5VCC
ns
2.0
5.5VCC
2
1
0
1.5
–1
1
–2
–55
–35
–15
5
25
45
65
85
105
0
125
50
°C
100
150
VOHP and VOLV vs Load Capacitance
VCC = 5V, VIN = 0 to 3V
VOHV and VOLP vs Load Capacitance
VCC = 5V, VIN = 0 to 3V
4.0
6
125°C
25°C
–55°C
3.5
3.0
5
4
125°C
25°C
–55°C
2.5
3
volts
2.0
volts
200
pF
1.5
1.0
2
1
125°C
25°C
–55°C
0.5
0.0
125°C
25°C
–55°C
0
–1
–0.5
–1
–2
0
50
100
150
200
0
pF
50
100
150
200
pF
SB00110
1998 Jan 16
9
Philips Semiconductors
Product specification
16-bit transceiver with dual enable, non-inverting
(3-State)
QFP52: plastic quad flat package; 52 leads (lead length 1.6 mm); body 10 x 10 x 2.0 mm
1998 Jan 16
10
MB2623
SOT379-1
Philips Semiconductors
Product specification
16-bit transceiver with dual enable, non-inverting
(3-State)
NOTES
1998 Jan 16
11
MB2623
Philips Semiconductors
Product specification
16-bit transceiver with dual enable, non-inverting
(3-State)
MB2623
Data sheet status
Data sheet
status
Product
status
Definition [1]
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
 Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
print code
Document order number:
yyyy mmm dd
12
Date of release: 05-96
9397-750-03513