MPS4250 Transistor PNP Silicon Features • This is a Pb−Free Device* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Emitter Voltage VCES −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W 2 BASE 1 EMITTER 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPS 4250 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 5 1 Device Package Shipping† MPS4250G TO−92 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPS4250/D MPS4250 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CES −40 − Vdc V(BR)CEO(sus) −40 − Vdc Collector −Base Breakdown Voltage (IC = −10 mA) V(BR)CBO −40 − Vdc Emitter −Base Breakdown Voltage (IE = −10 mA) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCB = −50 V) (VCB = −40 V, TA = 65°C) ICBO − − −10 −3.0 nA mA Emitter Cutoff Current (VEB = −3.0 V) IEBO − −20 nA 250 250 − − OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −5.0 mA) Collector −Emitter Sustaining Voltage (Note 1) (IC = −5.0) ON CHARACTERISTICS hFE DC Current Gain (IC = −1.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) − Collector −Emitter Saturation Voltage (Note 1) (IC = −10 mA, IB = −0.5 mA) VCE(sat) − −0.25 Vdc Base −Emitter Saturation Voltage (Note 1) (IC = −10 mA, IB = −0.5 mA) VBE(sat) − −0.9 Vdc Output Capacitance (VCB = −5.0 V, f = 1.0 MHz) Cobo − 6.0 pF Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 16 pF Small−Signal Current Gain (IC = −1.0 mA, VCE = −5.0 V, f = 1.0 kHz) (IC = −0.5 mA, VCE = −5.0 V, f = 20 MHz) hfe 250 2.0 800 − Noise Figure (IC = −20 mA, VCE = −5.0 V, RS = 10 kW, f = 1.0 kHz, PBW = 150 Hz) (IC = −250 mA, VCE = −5.0 V, RS = 1.0 kW, f = 1.0 kHz, PBW = 150 Hz) NF − − 2.0 2.0 SMALL−SIGNAL CHARACTERISTICS 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. http://onsemi.com 2 − dB MPS4250 PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O A B R STRAIGHT LEAD BULK PACK P L F K D X X G J H V C SECTION X−X N 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A BENT LEAD TAPE & REEL AMMO PACK R B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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