BF422 High Voltage Transistors NPN Silicon Features • This is a Pb−Free Device* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 250 Vdc Collector −Base Voltage VCBO 250 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 50 mAdc Collector Current − Peak ICM 100 mA Total Device Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 830 6.6 mW mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C 1 EMITTER 1 12 THERMAL CHARACTERISTICS Characteristic 3 BASE Symbol Thermal Resistance, Junction−to−Ambient RqJA Thermal Resistance, Junction−to−Lead RqJL Max Unit 3 STRAIGHT LEAD BULK PACK 3 BENT LEAD TAPE & REEL AMMO PACK °C/W 150 °C/W 68 2 TO−92 (TO−226AA) CASE 29−11 STYLE 14 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on a FR4 board with 200 mm2 of 1 oz copper and lead length of 5 mm. BF422 AYWW G G BF422 A Y WW G = = = = = Device Code Assembly Location Year Work Week Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BF422G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 1 1 Package Shipping† TO−92 (Pb−Free) 5000 Units/Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BF422/D BF422 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 − Vdc Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 300 − Vdc Emitter−Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Collector Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO − 0.01 mAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO − 100 nAdc hFE 50 − − Collector −Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) − 0.5 Vdc Base −Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) − 2.0 Vdc fT 60 − MHz Cre − 1.6 pF OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) SMALL−SIGNAL CHARACTERISTICS Current Gain − Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. http://onsemi.com 2 BF422 120 hFE, DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 -55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 f, T CURRENT-GAIN — BANDWIDTH (MHz) 80 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 70 60 50 40 30 20 10 1.0 1000 TJ = 25°C VCE = 20 V f = 20 MHz Figure 2. Capacitance 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current−Gain − Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 0.6 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages http://onsemi.com 3 BF422 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 N BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE A R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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