SPICE MODEL: DRDNB21D DRDNB21D Lead-free Green COMPLEX ARRAY FOR DUAL RELAY DRIVER NEW PRODUCT Features · · · · · · Epitaxial Planar Die Construction Two Pre-Biased Transistors and Two Switching Diodes, Internally Connected in One Package SOT-363 A Ideally Suited for Automated Assembly Processes · · · · · · Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) B C Qualified to AEC-Q101 standards for High Reliability Mechanical Data · · Dim H Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 K Moisture sensitivity: Level 1 per J-STD-020C J M F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 Terminal Connections: See Diagram M 0.10 0.25 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 a 0° 8° D F L All Dimensions in mm Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.006 grams (approximate) 5 6 4 5 D1 R1 = R3 = 2.2kW (nominal) D2 1 R2 = R4 = 47kW (nominal) R1 3 R1 R3 R3 Q1 6 Q2 R2 R2 4 R4 R4 2 1 Maximum Ratings, Total Device 2 3 @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Pd 200 mW Thermal Resistance, Junction to Ambient Air (Note 3) RqJA 625 °C/W Operating and Storage Junction Temperature Range Tj, TSTG -55 to +150 °C Power Dissipation (Note 3) Maximum Ratings, Pre-Biased NPN Transistor Characteristic @ TA = 25°C unless otherwise specified Symbol Value Collector-Base Voltage VCC 50 V Collector-Emitter Voltage Vin -5 to +12 V Emitter-Base Voltage IO 100 mA Output Current - Continuous (Note 3) IC 200 mA Notes: Unit 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30756 Rev. 3 - 2 1 of 5 www.diodes.com DRDNB21D ã Diodes Incorporated NEW PRODUCT Maximum Ratings, Switching Diode @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit VRM 100 V VRRM VRWM VR 75 V VR(RMS) 53 V Forward Continuous Current (Note 3) IFM 500 mA Average Rectified Output Current (Note 3) IO 250 mA IFSM 4.0 2.0 A Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0s Electrical Characteristics, Pre-Biased NPN Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistor Tolerance Resistance Ratio Tolerance Gain-Bandwidth Product* * @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Vl(off) 0.5 ¾ ¾ V VCC = 5V, IO = 100mA Test Condition Vl(on) ¾ ¾ 1.1 V VO = 0.3V, IO = 5mA VO(on) ¾ ¾ 0.3 V IO/Il = 50mA/0.25mA Il ¾ ¾ 3.6 mA IO(off) ¾ ¾ 0.5 uA VCC = 50V, VI = 0V Gl 80 ¾ ¾ ¾ VO = 5V, IO = 10mA DR1 -30 ¾ +30 % DR2/R1 -20 ¾ +20 % fT ¾ 250 ¾ MHz VI = 5V VCE = 10V, IE = 5mA, f = 100MHz Transistor - For Reference Only Electrical Characteristics, Switching Diode Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit V(BR)R 75 ¾ V IR = 10mA Forward Voltage (Note 4) VF 0.62 ¾ ¾ ¾ 0.72 0.855 1.0 1.25 V IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA Reverse Current (Note 4) IR ¾ 2.5 50 30 25 mA mA mA nA VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V Total Capacitance CT ¾ 4.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ¾ 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W Reverse Breakdown Voltage (Note 4) Notes: Test Condition 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Short duration pulse test used to minimize self-heating effect. DS30756 Rev. 3 - 2 2 of 5 www.diodes.com DRDNB21D NEW PRODUCT Device Characteristics PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 100 0 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve (Total Device) 1 1000 IC/IB = 10 VCE = 10 75° C 0.1 hFE, DC CURRENT GAIN VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V) Pre-Biased NPN Transistor Elements 75° C -25° C 25° C 0.01 100 0.001 10 0 20 40 30 10 50 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC 100 100 10 75°C VO = 5V VO = 0.2 25°C 10 Vin, INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (mA) 25° C -25° C -25°C 1 0.1 -25°C 1 75° C 25°C 0.01 0.001 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (V) Fig. 4 Collector Current vs. Input Voltage DS30756 Rev. 3 - 2 3 of 5 www.diodes.com 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 5 Input Voltage vs. Collector Current DRDNB21D NEW PRODUCT Pre-Biased NPN Transistor Elements ( Continued) 4 COB, CAPACITANCE (pF) IE = 0mA 3 2 1 0 0 10 5 15 30 25 20 VR, REVERSE BIAS VOLTAGE (V) Fig. 6 Output Capacitance 1000 IR, INSTANTANEOUS REVERSE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) Switching Diode Elements 100 10 TA = -40ºC TA = 0ºC TA = 25ºC 1 TA = 75ºC TA = 125ºC 10000 TA = 125ºC 1000 TA = 75ºC 100 TA = 25ºC 10 TA = 0ºC 1 TA = -40ºC 0.1 0.1 0 0.4 0.8 1.2 20 0 1.6 40 60 80 100 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Reverse Characteristics VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 7 Typical Forward Characteristics 3 CT, TOTAL CAPACITANCE (pF) f = 1MHz 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 VR, REVERSE VOLTAGE (V) Fig. 9 Typical Capacitance vs. Reverse Voltage DS30756 Rev. 3 - 2 4 of 5 www.diodes.com DRDNB21D NEW PRODUCT Typical Application Circuit L1 L2 D2 D1 Relay1 Relay2 RL1 RL2 R1 Q1 R3 Q2 R2 R4 DRDNB21D Typical Application Circuit using DRDNB21D with two independent relays. Ordering Information Notes: (Note 5) Device Marking Code Packaging Shipping DRDNB21D-7 RD08 SOT-363 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM RD08 XXXX = Product Type Marking Code YM = Date Code Marking Y = Year, e.g., T = 2006 M = Month, e.g., 1 = January Date Code Key Year 2005 2006 2007 2008 2009 Code S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30756 Rev. 3 - 2 5 of 5 www.diodes.com DRDNB21D