DIODES DDC144NS

DDC144NS
DUAL NPN PRE-BIASED TRANSISTOR
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General Descriptions
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DDC144NS features discrete dual NPN transistors that
can support continuous maximum current up to 100 mA.
It is suited for applications where the load needs to be
turned on and off using circuits like micro-controllers,
comparators, etc., particularly at a point of load. The
component devices can be used as a part of a circuit or
as a stand alone discrete device.
Features
•
•
•
•
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Fig. 1: SOT-363
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-363
Case Material: Molded Plastic. "Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Figure 2
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.0065 grams (approximate)
Maximum Ratings, Total Device
Fig. 2: Schematic and Pin Configuration
@TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Collector Current
(Note 3)
(Note 3)
Symbol
Pd
RθJA
Tj, TSTG
IC(max)
Maximum Ratings:
Sub-Component Device - Pre-Biased NPN Transistor
Characteristic
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R1) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product
Notes:
Unit
mW
°C/W
°C
mA
@TA = 25°C unless otherwise specified
Symbol
Vcc
Vin
Io
Supply Voltage
Input Voltage
Output Current
Electrical Characteristics:
Pre-Biased NPN Transistor
Value
200
625
-55 to +150
100
Value
50
-10 to +40
100
Unit
V
V
mA
@TA = 25°C unless otherwise specified
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
Δ R1
R2/R1
fT
Min
0.5
⎯
⎯
⎯
⎯
100
-30
-20
⎯
Typ
1.1
1.5
0.1
⎯
⎯
⎯
⎯
⎯
250
Max
⎯
3
0.3
0.18
0.5
⎯
+30
+20
⎯
Unit
V
V
V
mA
uA
⎯
%
%
MHz
Test Condition
Vcc = 5V, IO = 100uA
VO = 0.3V, IO = 2mA
IO/II = 10mA/0.5mA
VI = 5V
Vcc = 50V, VI = 0V
VO = 5V, IO = 5mA
⎯
⎯
VCE = 10V, IE = 5mA, f = 100 MHz
1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or go to Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf
DS30747 Rev. 6 - 2
1 of 4
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DDC144NS
© Diodes Incorporated
Typical Characteristics of NPN Transistor
@ TA = 25°C unless otherwise specified
250
0.08
IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (mW)
0.07
200
150
100
50
0.06
0.05
0.04
0.03
0.02
0.01
0
-50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Derating Curve
450
hFE, DC CURRENT GAIN
T A = 125οC
ο
300
TA = 85 C
250
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 4 Typical VCE vs. IC
2
400
VCE = 5V
350
0
450
ο
TA = 150 C
400
hFE, DC CURRENT GAIN
0
150
ο
TA = 25 C
200
150
350
300
250
200
150
ο
TA = -55 C
100
100
50
0
50
1
100
10
IC COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain
0.1
0
0.1
1,000
1,000
100
100
Ic /Ib =10
VCE(SAT), COLLECTOR VOLTAGE (V)
VCE(SAT), COLLECTOR VOLTAGE(V)
10
100
1
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical DC Current Gain
10
1
ο
TA = 150 C
0.1
0.01
0.1
DS30747 Rev. 6 - 2
1
100
10
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical VCE(SAT) vs. IC
1,000
10
1
0.1
0.01
0.1
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100
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical VCE(SAT) vs. IC
1,000
DDC144NS
© Diodes Incorporated
25
15
VI(ON), INPUT VOLTAGE (V)
22.5
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE = 0.3V
20
17.5
15
12.5
10
T A = 85°C
7.5
TA = 25°C
5
TA = -55°C
T A = 125°C
2.5
13.5
12
10.5
9
7.5
6
TA = 85°C
4.5
T A = -55°C
T A = 125°C
1.5
TA = 150°C
0
100
1
10
IC, OUTPUT CURRENT (mA)
Fig. 9 Typical Input Voltage vs. Output Current
TA = 150°C
0.1
30
27
27
24
24
VBE(SAT), BASE-EMITTER
SATURATION VOLTAGE (V)
30
21
18
15
12
9
6
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 10 Typical VBE(ON) vs. IC
100
Ic /Ib = 20
21
T A = 25°C
TA = 150°C
18
15
T A = -55°C
12
T A = 125°C
T A = 85°C
9
6
3
3
0
TA = 25°C
3
0
0.1
VBE(SAT), BASE-EMITTER
SATURATION VOLTAGE (V)
VCE = 5V
0.1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 11 Typical VBE(SAT) vs. IC
0
0.1
100
10
1
IC, COLLECTOR CURRENT (mA)
Fig. 12 Typical VBE(SAT) vs. IC
100
Ordering Information (Note 4)
Device
DDC144NS-7
Notes:
Packaging
SOT-363
Shipping
3000/Tape & Reel
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
YM
Marking Information
S20
Date Code Key
Year
Code
Month
Code
DS30747 Rev. 6 - 2
S20 = Product Type Marking Code,
YM = Date Code Marking
Y = Year, e.g., T = 2006
M = Month, e.g., 9 = September
Fig. 13
2005
S
Jan
1
2006
T
Feb
2
Mar
3
2007
U
Apr
4
2008
V
May
5
Jun
6
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2009
W
Jul
7
2010
X
Aug
8
Sep
9
2011
Y
Oct
O
2012
Z
Nov
N
Dec
D
DDC144NS
© Diodes Incorporated
Package Outline Dimensions
A
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
⎯
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
0°
8°
α
All Dimensions in mm
B C
H
K
M
J
D
F
L
Fig. 14
Suggested Pad Layout
E
Z
E
C
G
Dimensions
Z
G
X
Y
C
E
SOT-363*
2.5
1.3
0.42
0.6
1.9
0.65
Y
* Typical dimensions in mm
X
Fig. 15
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30747 Rev. 6 - 2
4 of 4
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DDC144NS
© Diodes Incorporated