DDC144NS DUAL NPN PRE-BIASED TRANSISTOR Please click here to visit our online spice models database. General Descriptions • DDC144NS features discrete dual NPN transistors that can support continuous maximum current up to 100 mA. It is suited for applications where the load needs to be turned on and off using circuits like micro-controllers, comparators, etc., particularly at a point of load. The component devices can be used as a part of a circuit or as a stand alone discrete device. Features • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Fig. 1: SOT-363 Mechanical Data • • • • • • • • Case: SOT-363 Case Material: Molded Plastic. "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Figure 2 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.0065 grams (approximate) Maximum Ratings, Total Device Fig. 2: Schematic and Pin Configuration @TA = 25°C unless otherwise specified Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Air Operating and Storage Temperature Range Collector Current (Note 3) (Note 3) Symbol Pd RθJA Tj, TSTG IC(max) Maximum Ratings: Sub-Component Device - Pre-Biased NPN Transistor Characteristic Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistor (R1) Tolerance Resistance Ratio Tolerance Gain-Bandwidth Product Notes: Unit mW °C/W °C mA @TA = 25°C unless otherwise specified Symbol Vcc Vin Io Supply Voltage Input Voltage Output Current Electrical Characteristics: Pre-Biased NPN Transistor Value 200 625 -55 to +150 100 Value 50 -10 to +40 100 Unit V V mA @TA = 25°C unless otherwise specified Symbol VI(off) VI(on) VO(on) II IO(off) GI Δ R1 R2/R1 fT Min 0.5 ⎯ ⎯ ⎯ ⎯ 100 -30 -20 ⎯ Typ 1.1 1.5 0.1 ⎯ ⎯ ⎯ ⎯ ⎯ 250 Max ⎯ 3 0.3 0.18 0.5 ⎯ +30 +20 ⎯ Unit V V V mA uA ⎯ % % MHz Test Condition Vcc = 5V, IO = 100uA VO = 0.3V, IO = 2mA IO/II = 10mA/0.5mA VI = 5V Vcc = 50V, VI = 0V VO = 5V, IO = 5mA ⎯ ⎯ VCE = 10V, IE = 5mA, f = 100 MHz 1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or go to Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf DS30747 Rev. 6 - 2 1 of 4 www.diodes.com DDC144NS © Diodes Incorporated Typical Characteristics of NPN Transistor @ TA = 25°C unless otherwise specified 250 0.08 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 0.07 200 150 100 50 0.06 0.05 0.04 0.03 0.02 0.01 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Derating Curve 450 hFE, DC CURRENT GAIN T A = 125οC ο 300 TA = 85 C 250 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 4 Typical VCE vs. IC 2 400 VCE = 5V 350 0 450 ο TA = 150 C 400 hFE, DC CURRENT GAIN 0 150 ο TA = 25 C 200 150 350 300 250 200 150 ο TA = -55 C 100 100 50 0 50 1 100 10 IC COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain 0.1 0 0.1 1,000 1,000 100 100 Ic /Ib =10 VCE(SAT), COLLECTOR VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE(V) 10 100 1 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical DC Current Gain 10 1 ο TA = 150 C 0.1 0.01 0.1 DS30747 Rev. 6 - 2 1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical VCE(SAT) vs. IC 1,000 10 1 0.1 0.01 0.1 2 of 4 www.diodes.com 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical VCE(SAT) vs. IC 1,000 DDC144NS © Diodes Incorporated 25 15 VI(ON), INPUT VOLTAGE (V) 22.5 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 0.3V 20 17.5 15 12.5 10 T A = 85°C 7.5 TA = 25°C 5 TA = -55°C T A = 125°C 2.5 13.5 12 10.5 9 7.5 6 TA = 85°C 4.5 T A = -55°C T A = 125°C 1.5 TA = 150°C 0 100 1 10 IC, OUTPUT CURRENT (mA) Fig. 9 Typical Input Voltage vs. Output Current TA = 150°C 0.1 30 27 27 24 24 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 30 21 18 15 12 9 6 1 10 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical VBE(ON) vs. IC 100 Ic /Ib = 20 21 T A = 25°C TA = 150°C 18 15 T A = -55°C 12 T A = 125°C T A = 85°C 9 6 3 3 0 TA = 25°C 3 0 0.1 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VCE = 5V 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 11 Typical VBE(SAT) vs. IC 0 0.1 100 10 1 IC, COLLECTOR CURRENT (mA) Fig. 12 Typical VBE(SAT) vs. IC 100 Ordering Information (Note 4) Device DDC144NS-7 Notes: Packaging SOT-363 Shipping 3000/Tape & Reel 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information S20 Date Code Key Year Code Month Code DS30747 Rev. 6 - 2 S20 = Product Type Marking Code, YM = Date Code Marking Y = Year, e.g., T = 2006 M = Month, e.g., 9 = September Fig. 13 2005 S Jan 1 2006 T Feb 2 Mar 3 2007 U Apr 4 2008 V May 5 Jun 6 3 of 4 www.diodes.com 2009 W Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O 2012 Z Nov N Dec D DDC144NS © Diodes Incorporated Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 ⎯ K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0° 8° α All Dimensions in mm B C H K M J D F L Fig. 14 Suggested Pad Layout E Z E C G Dimensions Z G X Y C E SOT-363* 2.5 1.3 0.42 0.6 1.9 0.65 Y * Typical dimensions in mm X Fig. 15 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30747 Rev. 6 - 2 4 of 4 www.diodes.com DDC144NS © Diodes Incorporated