SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110G TYPICAL CHARACTERISTICS VGS= -20V -16V -1.6 - Drain Current (Amps) g -Transconductance (mS) 250 200 VDS=-10V 150 100 50 fs -1.4 -12V -10V -9V -8V -1.2 -1.0 -0.8 -6V -0.4 -5V -4.5V -4V -3.5V I 0 0 -2 -4 -6 -8 0 -10 Transconductance v gate-source voltage 40 20 Coss Crss S G V 0 -Gate Source Voltage (Volts) C-Capacitance (pF) Ciss -20 -40 -80 -60 -6 -8 -10 0 ID=- 0.5A -2 -6 -8 -10 -12 -14 -16 -100 0 0.5 1.0 1.5 2.0 2.5 3.0 Q-Gate Charge (nC) Capacitance v drain-source voltage D COMPLEMENTARY TYPE ZVN2110G S D PARTMARKING DETAIL ZVP2110 G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -100 V Continuous Drain Current at Tamb=25°C ID -310 mA Pulsed Drain Current IDM -3 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VDS= -25V -50V -100V -4 VDS-Drain Source Voltage (Volts) Gate charge v gate-source voltage PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -100 Gate-Source Threshold Voltage VGS(th) -1.5 Gate-Body Leakage ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -1 -100 µA µA VDS=-100 V, VGS=0 VDS=-80 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) mA VDS=-25 V, VGS=-10V Ω VGS=-10V,ID=-375mA mS VDS=-25V,ID=-375mA Forward Transconductance (1)(2) 2.6 100 2.4 -5V and V VGS=-4V -7V 10 10 100 1.8 1000 1.4 1.2 VGS=VDS ID=-1mA 1.0 0.8 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 R 1 VGS=-10V ID=-0.375A 2.0 1.6 -10V -20V 2.2 ID-Drain Current (mA) On-resistance v drain current Junction Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3 - 430 MAX. UNIT CONDITIONS. V -750 Static Drain-Source On-State RDS(on) Resistance (1) Normalised R -Drain Source On Resistance Ω -4 Saturation Characteristics 60 0 -2 VDS - Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) 80 ✪ -7V -0.6 -0.2 0 ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω ZVP2110G gfs 8 125 Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 35 pF Reverse Transfer Capacitance (2) Crss 10 pF Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns VDS=-25V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-375mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3 - 429 SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110G TYPICAL CHARACTERISTICS VGS= -20V -16V -1.6 - Drain Current (Amps) g -Transconductance (mS) 250 200 VDS=-10V 150 100 50 fs -1.4 -12V -10V -9V -8V -1.2 -1.0 -0.8 -6V -0.4 -5V -4.5V -4V -3.5V I 0 0 -2 -4 -6 -8 0 -10 Transconductance v gate-source voltage 40 20 Coss Crss S G V 0 -Gate Source Voltage (Volts) C-Capacitance (pF) Ciss -20 -40 -80 -60 -6 -8 -10 0 ID=- 0.5A -2 -6 -8 -10 -12 -14 -16 -100 0 0.5 1.0 1.5 2.0 2.5 3.0 Q-Gate Charge (nC) Capacitance v drain-source voltage D COMPLEMENTARY TYPE ZVN2110G S D PARTMARKING DETAIL ZVP2110 G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -100 V Continuous Drain Current at Tamb=25°C ID -310 mA Pulsed Drain Current IDM -3 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VDS= -25V -50V -100V -4 VDS-Drain Source Voltage (Volts) Gate charge v gate-source voltage PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -100 Gate-Source Threshold Voltage VGS(th) -1.5 Gate-Body Leakage ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -1 -100 µA µA VDS=-100 V, VGS=0 VDS=-80 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) mA VDS=-25 V, VGS=-10V Ω VGS=-10V,ID=-375mA mS VDS=-25V,ID=-375mA Forward Transconductance (1)(2) 2.6 100 2.4 -5V and V VGS=-4V -7V 10 10 100 1.8 1000 1.4 1.2 VGS=VDS ID=-1mA 1.0 0.8 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 R 1 VGS=-10V ID=-0.375A 2.0 1.6 -10V -20V 2.2 ID-Drain Current (mA) On-resistance v drain current Junction Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3 - 430 MAX. UNIT CONDITIONS. V -750 Static Drain-Source On-State RDS(on) Resistance (1) Normalised R -Drain Source On Resistance Ω -4 Saturation Characteristics 60 0 -2 VDS - Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) 80 ✪ -7V -0.6 -0.2 0 ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω ZVP2110G gfs 8 125 Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 35 pF Reverse Transfer Capacitance (2) Crss 10 pF Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns VDS=-25V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-375mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3 - 429