ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -7V -6V -0.2 -5V -4V 0 -6 Drain Source -0.4 -8 -4 ID= -0.3A -2 -0.15A -0.075A 0 -2 -4 -6 -8 -10 0 V I - Drain Current (Amps) -0.6 -10 -6 -8 -10 Voltage Saturation Characteristics Saturation Characteristics 100 VDS= -10V 80 70 60 50 40 30 20 VGS= 0V f = 1MHz 40 30 20 Ciss 10 Coss 10 0 Crss 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 0 ID- Drain Current (Amps) -20 -40 -60 -80 VDS-Drain Source Voltage (Volts) Capacitance v drain-source voltage Transconductance v drain current ISSUE 3 OCTOBER 1995 FEATURES * 100 Volt VDS * RDS(on)=20Ω ✪ COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVN3310F MR 2.6 VGS= -10V ID= -150mA 2.2 and V -12 -10 2.0 1.8 1.6 -8 VDS= -6 -25V -4 Normalised R -Gate Source Voltage (Volts) V S G 2.4 -14 -50V -100V ID= 0.2A -2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VGS= VDS ID= -1mA 1.2 1.0 0.8 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Q-Charge (nC) Gate charge v gate-source voltage Normalised 3 - 437 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS Continuous Drain Current at Tamb=25°C ID VALUE UNIT -100 V 75 mA Pulsed Drain Current IDM -1.2 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -100 Gate-Source Threshold Voltage VGS(th) -1.5 RDS(on) and VGS(th) v Temperature MAX. UNIT CONDITIONS. -3.5 V ID=-1mA, VGS=0V V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS -20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -1 -50 µA µA VDS=-100V, VGS=0 VDS=-80V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) mA VDS=-25 V, VGS=-10V 20 Ω VGS=-10V, ID=-150mA mS VDS=-25V, ID=-150mA -300 Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) -16 ZVP3310F ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 50 90 C-Capacitance (pF) g -Transconductance (mS) -4 VGS-Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) sf -2 SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET gfs 50 Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 15 pF Reverse Transfer Capacitance (2) Crss 5 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 8 ns Fall Time (2)(3) tf 8 ns VDS=-25V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 436 ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -7V -6V -0.2 -5V -4V 0 -6 Drain Source -0.4 -8 -4 ID= -0.3A -2 -0.15A -0.075A 0 -2 -4 -6 -8 -10 0 V I - Drain Current (Amps) -0.6 -10 -6 -8 -10 Voltage Saturation Characteristics Saturation Characteristics 100 VDS= -10V 80 70 60 50 40 30 20 VGS= 0V f = 1MHz 40 30 20 Ciss 10 Coss 10 0 Crss 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 0 ID- Drain Current (Amps) -20 -40 -60 -80 VDS-Drain Source Voltage (Volts) Capacitance v drain-source voltage Transconductance v drain current ISSUE 3 OCTOBER 1995 FEATURES * 100 Volt VDS * RDS(on)=20Ω ✪ COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVN3310F MR 2.6 VGS= -10V ID= -150mA 2.2 and V -12 -10 2.0 1.8 1.6 -8 VDS= -6 -25V -4 Normalised R -Gate Source Voltage (Volts) V S G 2.4 -14 -50V -100V ID= 0.2A -2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VGS= VDS ID= -1mA 1.2 1.0 0.8 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Q-Charge (nC) Gate charge v gate-source voltage Normalised 3 - 437 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS Continuous Drain Current at Tamb=25°C ID VALUE UNIT -100 V 75 mA Pulsed Drain Current IDM -1.2 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -100 Gate-Source Threshold Voltage VGS(th) -1.5 RDS(on) and VGS(th) v Temperature MAX. UNIT CONDITIONS. -3.5 V ID=-1mA, VGS=0V V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS -20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -1 -50 µA µA VDS=-100V, VGS=0 VDS=-80V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) mA VDS=-25 V, VGS=-10V 20 Ω VGS=-10V, ID=-150mA mS VDS=-25V, ID=-150mA -300 Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) -16 ZVP3310F ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 50 90 C-Capacitance (pF) g -Transconductance (mS) -4 VGS-Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) sf -2 SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET gfs 50 Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 15 pF Reverse Transfer Capacitance (2) Crss 5 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 8 ns Fall Time (2)(3) tf 8 ns VDS=-25V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 436