INTEGRATED CIRCUITS SA621 1GHz - Low voltage LNA, mixer and VCO Product specification IC17 Data handbook 1997 Nov 07 Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO DESCRIPTION SA621 PIN CONFIGURATION The SA621 is a combined low-noise amplifier, mixer and VCO designed for high-performance low-power communication systems from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise figure at 881MHz with 15dB gain and an IP3 intercept of -7dBm at the input. The gain is stabilized by on-chip compensation to vary less than ±0.2dB over -40 to +85°C temperature range. The wide-dynamic-range mixer has a 12dB noise figure and IP3 of +4.5dBm at the input at 881MHz. The integrated VCO circuit with external resonator produces a high quality LO signal that drives the mixer and is buffered to an external PLL synthesizer IC. The nominal current drawn from a single 3V supply is 13.3mA. Additionally, the entire circuit can be powered down to further reduce the supply current to less than 20µA. PD1 1 20 MIXER OUT PD2 2 19 MIXER OUT GND 3 18 GND LO OUT 4 17 MIXER IN GND 5 16 GND GND 6 15 LNA IN TANK 7 FEATURES • Low current consumption • Outstanding gain and noise figure • Excellent gain stability versus temperature and supply voltage • LNA, mixer and VCO power down capability • Monotonic VCO frequency vs control voltage 14 GND GND 8 13 LNA OUT GND 9 12 VCC BYPASS 10 11 GND SR01429 Figure 1. Pin Configuration APPLICATIONS • 900MHz cellular and cordless front-end • Spread spectrum receivers • RF data links • UHF frequency conversion • Portable radio ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # -40 to +85°C SA621DH SOT360-1 20-Pin Thin Shrink Small Outline Package (Surface-mount, TSSOP) BLOCK DIAGRAM MIXER OUT 20 10pF MIXER OUT GND 19 18 MIXER IN 17 GND LNA IN GND LNA OUT VCC GND 16 15 14 13 12 11 10 10pF LNA 1 2 3 4 5 6 7 8 9 PD1 PD2 GND LO OUT GND GND TANK GND GND BYPASS SR01428 Figure 2. SA621 Block Diagram 1997 Nov 07 2 853-1849 018660 Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO SA621 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER voltage1 VCC Supply VIN Voltage applied to any other pin PD Power dissipation, TA = 25°C (still air)2 20-Pin Plastic SSOP RATING UNITS -0.3 to +6 V -0.3 to (VCC + 0.3) V 980 mW TJMAX Maximum operating junction temperature 150 °C PMAX Maximum power input/output +20 dBm TSTG Storage temperature range –65 to +150 °C NOTE: 1. Transients exceeding 8V on VCC pin may damage product. 2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θJA: 20-Pin SSOP = 110°C/W 3. Pins 19 and 20 are ESD sensitive (mixer outputs). RECOMMENDED OPERATING CONDITIONS SYMBOL VCC PARAMETER RATING UNITS Supply voltage 2.7 to 5.5 V TA Operating ambient temperature range -40 to +85 °C TJ Operating junction temperature -40 to +105 °C DC ELECTRICAL CHARACTERISTICS VCC = +3.0V, TA = 25°C; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN Full power-on ICC Supply Su ly current TYP MAX UNITS 13.3 mA LNA powered-down 10 mA Standby (VCO + bias) 5.7 mA Full power-down 20 µA VT PD logic threshold voltage 1.2 VIH Logic 1 level 2.0 VIL Logic 0 level IIL PD1 input current Enable = 0.4V 10 µA IIH PD2 input current Enable = 2.4V 10 µA 1997 Nov 07 1.6 –0.3 3 1.8 V VCC V 0.8 V Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO SA621 AC ELECTRICAL CHARACTERISTICS VCC = +3.0V, TA = 25°C; RFIN = 881MHz, fVCO = 964MHz; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS –3 TYP +3 UNITS Low Noise Amplifier fRF RF input frequency range S21 Amplifier gain 15 dB S21 Amplifier gain in power-down mode -28 dB ∆S21/∆T Gain temperature sensitivity enabled ∆S21/∆f Gain frequency variation 800 1000 MHz 0.006 dB/°C 800MHz - 1.0GHz ±0.013 dB/MHz @ 881 MHz -28 dB With ext. impedance matching S12 Amplifier reverse isolation S11 Amplifier input match -10 dB S22 Amplifier output match -10 dB P-1dB Amplifier input 1dB gain compression -20 dBm IP3 Amplifier input third order intercept -7 dBm NF Amplifier noise figure 1.7 dB tON Amplifier turn-on time (Enable Lo → Hi) 120 µs tOFF Amplifier turn-off time (Enable Hi → Lo) 0.3 µs Mixer PGC Mixer power conversion gain: RP = RL = 1.2kΩ, fRF = 881MHz, fLO = 964MHz, fIF = 83MHz 8.7 dB S11M Mixer input match Ext. impedance matching req. -10 dB NFM Mixer SSB noise figure 12 dB P-1dB Mixer input 1dB gain compression -10 dBm IP3M Mixer input third order intercept 4.5 dBm IP2INT Mixer input second order intercept 15 dBm PRFM-IF Mixer RF feedthrough RFIN = -25dBm -41 dBm PLO-IF LO feedthrough to IF LO = -10dBm -23 dBm PLO-RFM LO to mixer input feedthrough -52 dBm PLO-RF LO to LNA input feedthrough -38 dBm Voltage Controlled Oscillator (VCO)1 fVCO VCO frequency range PVCO VCO power out 883 See Figure 3 VCO phase hase noise2 -10 1083 -8 Offset = 30kHz -109 Offset = 60kHz -115 Harmonic content Pulling figure dBm dBc/Hz -22 Residual modulation dBc 45 VSWR=2:1, all phases Pushing figure MHz dB ±500 kHz ±100 kHz/V Overall System GSYS System gain LNA + Mixer 23.0 23.7 24.4 dB NOTES: 1. VCO performance dependent on external components. 2. Based on copper-plated 2mm ceramic resonator (1/4 wave), f = 1025MHz, and can be improved by silver-plated or larger resonators. 1997 Nov 07 4 Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO SA621 Table 1. Power ON/OFF Control Logic PD1 PD2 0 0 0 1 or open Full chip power-down VCO on, Mixer on, LNA power-down 1 or open 0 VCO on, LNA and Mixer power-down 1 or open 1 or open Full chip power-on (default) C1 100pF L6 12nH C3 6.8pF C2 10nF L1 560nH IFOUT L4 560nH 20 MIXER OUT 19 MIXER OUT C10 2.2pF 18 GND L3 6.8nH C11 10nF C8 10nF + – C9 0.1µF C13 33pF C14 6.8pF 17 MIXER IN VCC 3V 16 GND 15 LNA IN 14 GND 13 LNA OUT 12 VCC 11 GND C4 2.2pF SA621 PD1 1 PD2 2 GND 3 LOOUT 4 GND 5 GND 6 TANK 7 GND 8 GND 9 BYPASS 10 MURATA 2mm 1/4 WAVE FREQ=1025MHz D1 VCO CONTROL R2 C6 10nF 24Ω C12 100pF C10 220pF VCOOUT C5 .5pF L7 18.5nH Hi–Q R1 5.1kΩ D7 10nF SR01424 Figure 3. SA621 Applications Circuit 1997 Nov 07 5 Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO SA621 PERFORMANCE CHARACTERISTICS -4.00 -15 -5.00 -16 -18 -40°C -7.00 LNA 1dB (dBm) V POWER OUT (dBm) CC -17 -6.00 -8.00 25°C -9.00 85°C -19 -20 25°C -21 -22 -10.00 -40°C -23 85°C -11.00 -24 -12.00 2.5 0 3 3.5 4 VCC (V) 4.5 5 -25 2.5 5.5 3 3.5 5 5.5 -27.0 -9.0 -40°C -27.5 -40°C -28.0 25°C -10.0 25°C LNA GAIN (dB) MIXER 1dB (dBm) 4.5 LNA 1dB Compression vs VCC VCO Power Out vs VCC -9.5 4 VCC (V) -10.5 -11.0 -28.5 -29.0 -29.5 85°C 85°C -30.0 -11.5 -30.5 -12.0 2.5 3 3.5 4 4.5 5 -31.0 2.5 0 5.5 VCC (V) 3 3.5 Mixer 1dB Compression vs VCC 4 VCC (V) 4.5 5 5.5 5 5.5 LNA Gain (Disabled) vs VCC 7.0 -2 6.5 -3 -4 6.0 -40°C LNA IP3 (dBm) MIXER IP3 (dBm) -5 5.5 25°C 5.0 4.5 -6 85°C -7 -8 25°C -9 4.0 85°C -10 3.5 -11 -40°C 3.0 2.5 3 3.5 4 VCC (V) 4.5 5 -12 2.5 5.5 Mixer IP3 vs VCC 3.5 4 VCC (V) 4.5 LNA IP3 vs VCC Figure 4. 1997 Nov 07 3 6 SR01425 Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO SA621 PERFORMANCE CHARACTERISTICS 13.8 14 13.6 ICC Full Chip Power–On 12 13.4 ICC LNA Off, Mixer & VCO On 10 25°C 13.0 I CC(mA) I CC(mA) 13.2 85°C 12.8 12.6 8 ICC VCO On, LNA & Mixer Off 6 -40°C 12.4 4 12.2 2 12.0 0 11.8 2.5 3 3.5 4 VCC (V) 4.5 5 2.5 5.5 3 3.5 4 4.5 5 5.5 VCC (V) ICC vs VCC at Room Temperature ICC vs VCC and Temperature -35 12 -36 11 -37 -40°C 25°C -38 LO to LNA IN (dBm) MIXER GAIN (dB) 10 9 25°C 8 7 85°C -39 -40 -41 -42 6 -43 5 -44 4 2.5 3 3.5 4 VCC (V) 4.5 5 -40°C 85°C -45 2.5 5.5 3 3.5 4 VCC (V) 4.5 5 5.5 LO to LNA In Feedthrough vs VCC Mixer Power Gain vs VCC -20 -44 -21 -40°C -46 -22 -48 25°C -50 LO to IF (dBm) LO to MIXER IN (dBm) -23 25°C -52 -54 -40°C -24 -25 85°C -26 -56 -27 -58 -28 -60 -29 -62 -30 2.5 85°C -64 2.5 3 3.5 4 4.5 5 5.5 VCC (V) 3.5 4 VCC (V) 4.5 LO to IF Feedthrough vs VCC LO to Mixer In Feedthrough vs VCC Figure 5. 1997 Nov 07 3 7 5 5.5 SR01426 Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO SA621 PERFORMANCE CHARACTERISTICS –35 15.6 –36 15.4 15.2 -40°C -40°C –38 15.0 25°C LNA GAIN (dB) MIXER IN to IF (dBm) –37 –39 25°C –40 –41 14.8 14.6 14.4 85°C 85°C –42 14.2 –43 14.0 –44 13.8 –45 2.5 3 3.5 4 VCC (V) 4.5 5 13.6 2.5 5.5 3 3.5 4 VCC (V) 4.5 5 5.5 5 5.5 5 5.5 LNA Gain (Enabled) vs VCC Mixer In to IF Feedthrough vs VCC 12.5 2.0 12.4 1.9 12.3 1.8 85°C 12.2 LNA NOISE FIGURE (dB) MIXER NOISE FIGURE (dB) 85°C 12.1 25°C 12.0 11.9 -40°C 11.8 1.7 1.6 1.5 1.4 1.2 11.6 1.1 3 3.5 4 4.5 5 -40°C 1.3 11.7 11.5 2.5 25°C 1.0 2.5 5.5 3 3.5 VCC (V) 4.5 LNA Noise Figure vs VCC –95.0 –95.0 –100.0 –100.0 VCO PHASE NOISE (dBc/Hz VCO PHASE NOISE (dBc/Hz Mixer Noise Figure vs VCC –105.0 –110.0 4 VCC (V) 85°C 25°C –115.0 –105.0 85°C –110.0 40°C –115.0 40°C –120.0 –125.0 2.5 –120.0 3 3.5 4 VCC (V) 4.5 5 –125.0 2.5 5.5 VCO Phase Noise vs VCC @60kHz Offset 3.5 4 VCC (V) 4.5 VCO Phase Noise vs VCC @ 30kHz Offset Figure 6. 1997 Nov 07 3 8 SR01427 Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO CH2 S11 SA621 1 U FS 1: 40.1 Ω -129.6 Ω 200 MHz 2: 24.0 Ω -62.9 Ω 400 MHz 3: 18.6 Ω -37.4 Ω 600 MHz 4: 14.1 Ω 10.5 pF -16.7 Ω 900 MHz 4 1 3 2 START 100. 000 000 MHz STOP 1 200. 000 000 MHz A. S11 DATA CH1 S22 1 U FS 1: 40.5 Ω -28.2 Ω 700 MHz 2: 36.1 Ω -12.4 Ω 800 MHz 3: 34.7 Ω 3.5 Ω 900 MHz 4: 34.9 Ω 3.74 Ω 661.4 pH 900 MHz 4 1 2 3 START 700. 000 000 MHz STOP B. S22 DATA Figure 7. Typical S11 of LNA at 3V 1997 Nov 07 9 1 200. 000 000 MHz SR01252 Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO S22 CH1 SA621 1 U FS 1: 40.5 Ω -28.2 Ω 700 MHz 2: 36.1 Ω -12.4 Ω 800 MHz 3: 34.7 Ω 3.5 Ω 900 MHz 4: 34.9 Ω 3.74 Ω 661.4 pH 900 MHz 4 1 2 3 START 700. 000 000 MHz STOP 1 200. 000 000 MHz SR01253 Figure 8. Typical S22 of LNA at 3V CH1 S21 10 U FS 1: 6.7 U 142.5 ° 200 MHz 2: 5.9 U 112.3 ° 400 MHz 3: 5.9 U 78.1 ° 600 MHz 4: 4.5 U 21.2° 900 MHz 3 2 1 4 START 100. 000 000 MHz STOP 1 200. 000 000 MHz SR01254 Figure 9. Typical S21 of LNA at 3V 1997 Nov 07 10 Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO CH2 S12 SA621 50 mU FS 4 1: 1.9 mU 83.0 ° 200 MHz 2: 1.6 mU 133.5 ° 400 MHz 3: 11.4 mU 141.5 ° 600 MHz 4: 27.9 mU 106.1° 900 MHz 3 21 START 100. 000 000 MHz STOP 1 200. 000 000 MHz SR01255 Figure 10. Typical S12 of LNA at 3V CH1 S11 1 U FS 1: 122.8 Ω -144.9 Ω 200 MHz 2: 58.0 Ω -86.8 Ω 400 MHz 3: 45.9 Ω -62.3 Ω 600 MHz 4: 26.6 Ω -43.2 Ω 4.085 pF 900 MHz 1 4 3 START 100. 000 000 MHz 2 STOP 1 200. 000 000 MHz SR01256 Figure 11. Typical S11 of Mixer at 3V 1997 Nov 07 11 Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO CH1 S11/M SA621 1 U FS 4 3 1: -11.766 Ω 289.41 Ω 200 MHz 2: 11.953 Ω 134.05 Ω 400 MHz 3: 16.555 Ω 78.48 Ω 600 MHz 3: 18.652 Ω 31.516 Ω 5.5732 nH 900 MHz 2 1 START 100. 000 000 MHz STOP 1 200. 000 000 MHz SR01257 Figure 12. Typical 1/S11 of VCO (Pin 7)at 3V 1997 Nov 07 12 Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO SA621 Table 2. Typical S-Parameters of LNA at 3V LNA Freq (MHz) |S11| (U) <S11 (deg) |S21| (U) <S21 (deg) |S12| (U) <S12 (deg) |S22| (U) <S22 (deg) 100 122 0.86 -20 7.4 160 0.001 92 0.59 -10 0.86 -24 7.1 156 0.001 62 0.58 -12 144 0.85 -28 7.0 151 0.001 105 0.58 -14 166 0.83 -32 6.9 148 0.000 92 0.57 -16 188 0.82 -36 6.8 144 0.002 100 0.57 -18 210 0.81 -41 6.7 140 0.002 74 0.56 -20 232 0.80 -45 6.6 136 0.002 100 0.55 -22 254 0.79 -48 6.5 133 0.001 84 0.54 -25 276 0.78 -52 6.4 130 0.001 103 0.53 -27 298 0.76 -56 6.3 126 0.002 94 0.52 -29 320 0.75 -59 6.3 123 0.002 67 0.51 -31 342 0.73 -63 6.2 119 0.002 108 0.50 -33 364 0.71 -66 6.1 116 0.002 118 0.48 -35 386 0.70 -69 6.0 113 0.001 103 0.47 -36 408 0.69 -72 5.9 111 0.001 176 0.46 -37 430 0.68 -76 5.9 109 0.004 174 0.45 -37 452 0.69 -78 6.0 106 0.006 162 0.46 -38 474 0.68 -82 6.1 102 0.007 160 0.47 -42 496 0.67 -85 6.1 97 0.008 153 0.47 -46 518 0.66 -89 6.1 93 0.010 146 0.46 -50 540 0.65 -92 6.1 89 0.009 142 0.45 -55 562 0.63 -96 6.1 85 0.010 138 0.43 -59 584 0.62 -99 6.0 81 0.011 146 0.42 -64 606 0.62 -102 5.9 77 0.011 141 0.40 -69 628 0.61 -104 5.8 72 0.013 137 0.38 -73 650 0.61 -107 5.7 69 0.013 131 0.36 -78 672 0.60 -109 5.7 65 0.016 130 0.34 -84 694 0.60 -112 5.6 61 0.016 132 0.31 -90 716 0.59 -115 5.5 57 0.017 129 0.29 -97 738 0.59 -118 5.5 53 0.019 128 0.27 -104 760 0.59 -121 5.3 48 0.021 123 0.24 -113 782 0.59 -124 5.3 44 0.021 122 0.22 -122 804 0.59 -126 5.1 40 0.022 120 0.21 -133 826 0.59 -129 5.0 36 0.024 118 0.19 -145 848 0.59 -132 4.9 31 0.026 116 0.18 -159 870 0.59 -135 4.8 26 0.027 112 0.17 -175 892 0.59 -138 4.6 22 0.028 108 0.18 169 914 0.59 -142 4.5 18 0.028 106 0.19 155 936 0.59 -144 4.3 14 0.028 106 0.20 142 958 0.59 -148 4.2 9 0.030 100 0.22 130 980 0.59 -151 4.0 4 0.031 99 0.24 120 1002 0.59 -153 3.8 0 0.031 95 0.26 111 1024 0.59 -157 3.6 -2 0.032 91 0.28 102 1046 0.59 -160 3.5 -6 0.032 86 0.30 95 1068 0.59 -164 3.3 -10 0.033 86 0.33 88 1090 0.59 -167 3.2 -14 0.033 81 0.35 82 1112 0.59 -170 3.0 -18 0.031 79 0.36 77 1134 0.58 -172 2.8 -22 0.030 46 0.38 72 1156 0.58 -175 2.7 -25 0.031 79 0.39 67 1178 0.57 -178 2.5 -28 0.031 74 0.41 63 1200 0.57 178 2.4 -31 0.029 72 0.42 59 1997 Nov 07 13 Philips Semiconductors Product specification 1GHz low voltage LNA, mixer and VCO SA621 Table 3. Typical S-Parameters of Mixer at 3V Mixer Freq (MHz) |S11| (U) 100 122 Mixer <S11 (deg) Freq (MHz) |S11| (U) 0.73 -11 672 0.54 -65 0.73 -147 694 0.54 -67 144 0.72 -16 716 0.54 -69 166 0.72 -19 738 0.54 -71 188 0.72 -21 760 0.54 -73 210 0.71 -24 782 0.55 -76 232 0.70 -27 804 0.55 -78 254 0.70 -29 826 0.55 -80 276 0.69 -32 848 0.55 -82 298 0.68 -34 870 0.55 -85 320 0.67 -37 892 0.56 -87 342 0.66 -39 914 0.55 -90 364 0.64 -42 936 0.56 -93 386 0.63 -–44 958 0.56 -96 408 0.62 -46 980 0.56 -98 430 0.61 -48 1002 0.56 -101 452 0.59 -50 1024 0.57 -104 474 0.58 -52 1046 0.57 -106 496 0.57 -53 1068 0.57 -110 518 0.56 -54 1090 0.57 -112 540 0.55 -56 1112 0.57 -115 562 0.55 -57 1134 0.57 -118 584 0.54 -59 1156 0.57 -121 606 0.54 -61 1178 0.57 -124 628 0.54 -62 1200 0.57 -127 650 0.54 -64 1997 Nov 07 14 <S11 (deg) Philips Semiconductors Product specification 1GHz low voltage dLNA, mixer and VCO TSSOP20: plastic thin shrink small outline package; 20 leads; body width 4.4 mm 1997 Nov 07 15 SA621 SOT360-1 Philips Semiconductors Product specification 1GHz low voltage dLNA, mixer and VCO SA621 DEFINITIONS Data Sheet Identification Product Status Definition Objective Specification Formative or in Design This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. Preliminary Specification Preproduction Product This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product Specification Full Production This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product. Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 Philips Semiconductors and Philips Electronics North America Corporation register eligible circuits under the Semiconductor Chip Protection Act. Copyright Philips Electronics North America Corporation 1996 All rights reserved. Printed in U.S.A. 1997 Nov 07 16