PHILIPS SA2420

INTEGRATED CIRCUITS
SA2420
Low voltage RF transceiver — 2.45GHz
Product specification
1997 May 23
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45 GHz
DESCRIPTION
SA2420
PIN CONFIGURATION
The SA2420 transceiver is a combined low-noise amplifier, receive
mixer, transmit mixer and LO buffer IC designed for
high-performance low-power communication systems for
2.4-2.5GHz applications. The LNA has a 2.5dB noise figure at
2.45GHz with 14dB gain and an IP3 intercept of -3dBm at the input.
The gain is stabilized by on-chip compensation to vary less than
±0.2dB over the -40 to +85°C temperature range. The
wide-dynamic-range receive mixer has a 10.9dB noise figure and an
input IP3 of +2.8dBm at 2.45GHz. The nominal current drawn from
a single 3V supply is 37mA in transmit mode and 22mA in receive
mode.
DH Package
GND
1
24 VCC
LNA IN
2
23 LNA OUT
GND
3
22 GND
GND
4
21 ATTEN SW
Rx IF OUT
5
20 GND
Rx IF OUT
6
19 RF IN/OUT
Tx IF IN
7
18 GND
Tx IF IN
8
17 Tx/Rx SW
GND
9
16 GND
LOP
10
15 GND
LO SW
11
14 VCC LO
LOM
12
13 CHIP EN
FEATURES
• Low current consumption: 37mA nominal transmit mode and
22mA nominal receive mode
• Fabricated on a high volume, rugged BiCMOS technology
• High system power gain: 22.5dB (LNA + Mixer) at 2.45GHz
• TSSOP24 package
• Excellent gain stability versus temperature and supply voltage
• -10dBm LO input power can be used to drive the mixer
• Operates with either full or half frequency LO
• Wide IF range: 50–500MHz
SR00164
Figure 1. Pin Configuration
APPLICATIONS
• 2.45GHz WLAN front-end (802.11, ISM)
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
-40 to +85°C
SA2420DH
SOT355-1
24-Pin Plastic Thin Shrink Small Outline Package (Surface-mount, TSSOP)
BLOCK DIAGRAM
VCC
LNA
OUT
GND
24
23
22
ATTEN
SW
21
GND
RF IN/
OUT
GND
Tx/Rx
SW
GND
GND
VCC
LO
CHIP
EN
20
19
18
17
16
15
14
13
TX
PRE-DRIVER
BPF
ATTENUATOR
LNA
RX
BPF
RX
BUFFER
TX
1
2
3
4
5
6
7
8
9
GND
LNA
IN
GND
GND
Rx IF
OUT
Rx IF
OUT
Tx IF
IN
Tx IF
IN
GND
X1
FREQ.
DBLER
X2
10
11
12
LOP
LO
SW
LOM
SR00165
Figure 2. SA2420 Block Diagram
1997 May 23
2
853–1984 18069
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45 GHz
SA2420
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VCC
Supply voltage
VIN
Voltage applied to any pin
PD
Power dissipation, TA = 25°C (still air)
24-Pin Plastic TSSOP
RATING
UNITS
-0.3 to +6
V
-0.3 to (VCC + 0.3)
V
555
mW
TJMAX
Maximum operating junction temperature
150
°C
PMAX
Maximum power (RF/IF/LO pins)
+20
dBm
TSTG
Storage temperature range
–65 to +150
°C
NOTE:
1. Transients exceeding these conditions may damage the product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, and absolute maximum ratings may
impact product reliability θJA: 24-Pin TSSOP = 117°C/W
3. IC is protected for ESD voltages for 2000V, excepts pins 10 and 12, which are protected up to 500V.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC
PARAMETER
RATING
UNITS
Supply voltage
2.7 to 5.5
V
TA
Operating ambient temperature range
-40 to +85
°C
TJ
Operating junction temperature
-40 to +105
°C
DC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25°C; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
ICCTX
Supply current, Transmit
ICCRX
TEST CONDITIONS
MIN
-4σ
TYP
+4σ
MAX
UNITS
LO mode = Hi
25
37
45
mA
Supply current, Receive
LO mode = Hi
15
22
28
mA
ICC OFF
Power down mode (Tx/Rx SW = Low)
LO mode = Hi,
LNA gain = Hi
0
10
µA
VLNA-IN
LNA input voltage
Receive mode
0.855
V
ILNA-OUT
LNA output bias current
Receive mode
4.0
mA
VLO 2.1 GHz
LO buffer DC input voltage
LO mode = Hi
2.1
V
VLO 1.05 GHz
LO buffer DC input voltage
LO mode = Low
2.1
V
VTX IF
Tx Mixer input voltage
Transmit mode
1.7
V
VTX IFB
Tx Mixer input voltage
Transmit mode
1.7
V
1997 May 23
3
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45 GHz
SA2420
AC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25°C; LOIN = -10dBm @ 2.1GHz; fRF = 2.45GHz; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
-4σ
TYP
+4σ
12.7
14.0
15.3
MAX
UNITS
Low Noise Amplifier (In = Pin 2; Out = 23)
S21
Amplifier gain
LNA gain = Hi
Gain temperature sensitivity
LNA gain = Hi
-0.002
dB/°C
Gain VCC drift
LNA gain = Hi
0.3
dB/V
S12
Amplifier reverse isolation
LNA gain = Hi
-22
dB
S11
Amplifier input match1
LNA gain = Hi
-8
dB
S22
Amplifier output
match1
LNA gain = Hi
-8
dB
ISO
Isolation: LO1 to LNAIN
LO mode = Hi,
LNA gain = Hi
-45
dB
Amplifier input 1dB gain compression
LNA gain = Hi
-15
dBm
IP3
Amplifier input third order intercept
f1 - f2 = 1MHz,
LNA gain = Hi
-3
dBm
NF
Amplifier noise figure (50Ω)
LNA gain = Hi
2.3
2.5
2.7
Amplifier gain
LNA gain = Low
–14.0
-13.3
–12.0
Gain temperature sensitivity
LNA gain = Low
-0.01
dB/°C
Gain VCC drift
LNA gain = Low
0.3
dB/V
S12
Amplifier reverse isolation
LNA gain = Low
-16
dB
S11
Amplifier input match1
LNA gain = Low
-8
dB
match1
LNA gain = Low
-8
dB
Isolation: LO1 to LNAIN
LO mode = Hi,
LNA gain = Low
-45
dB
Amplifier input 1dB gain compression
LNA gain = Low
+6
dBm
IP3
Amplifier input third order intercept
f1 - f2 = 1MHz,
LNA gain = Low
17
dBm
NF
Amplifier noise figure (50Ω)
LNA gain = Low
17
dB
∆S21/∆T
∆S21/∆VCC
P-1dB
dB
dB
LNA High Overload Mode
S21
∆S21/∆T
∆S21/∆VCC
S22
ISO
P-1dB
Amplifier output
dB
Rx Mixer (RF = Pin 19, IF = Pins 5 and 6, LO = Pin 10 or 12, PLO = -10dBm)
PGC
∆GC/∆T
∆GC/∆VCC
S11–RF
Power conversion gain into 50Ω :
matched to 50W using external balun
circuitry.
fS = 2.45GHz,
fLO = 2.1GHz,
fIF = 350MHz
7.9
Gain temperature drift
8.5
9.1
dB
-0.016
dB/°C
Gain VCC drift
0.34
dB/V
Input match at RF (2.45GHz)1
-15
dB
NFM
SSB noise figure (2.45GHz) (50Ω)
10.2
10.9
11.6
dB
P-1dB
Mixer input 1dB gain compression
–11.4
-10.3
–9.2
dBm
1.7
2.8
3.9
dBm
IP3
Input third order intercept
fRF
RF frequency
fIF
IF frequency range3
1997 May 23
f1 - f2 = 1MHz
range3
4
2.4
2.45
2.5
GHz
300
350
400
MHz
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45 GHz
SA2420
AC ELECTRICAL CHARACTERISTICS (continued)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
-4σ
TYP
+4σ
MAX
UNITS
Rx Mixer Spurious Components (PIN = P-1dB)
PRF-IF
RF feedthrough to IF
CL = 2pF per side
-35
dBc
PLO-IF
LO feedthrough to IF
CL = 2pF per side
-35
dBc
Tx Mixer (RF = Pin 19, IF = Pins 7 and 8, LO = Pin 10 or 12, PLO = -10dBm)
PGC
∆GC/∆T
∆GC/∆VCC
S11–RF
Power conversion gain: RL = 50Ω
RS = 50Ω
15.0
Gain temperature drift
Gain voltage drift
Output match at RF
(2.45GHz)1
NFM
SSB noise figure (2.45GHz) (50Ω)
P-1dB
Output 1dB gain compression
IP3
Output third order intercept
fRF
RF frequency range3
fIF
fS = 2.45GHz,
fLO = 2.1GHz,
fIF = 350MHz
IF frequency
17
19.9
dB
-0.032
dB/°C
0.4
dB/V
-10
dB
13.2
f1 - f2 = 1MHz
range3
dB
1.5
2.9
4.3
10.1
+11.5
12.9
dBm
dBm
2.4
2.45
2.5
GHz
300
350
400
MHz
Tx Mixer Spurious Components (POUT = P-1dB)
PIF-RF
IF feedthrough to RF
-29
dBc
PLO-RF
LO feedthrough to RF
-20
dBc
P2LO-RF
2*LO feedthrough to RF
-25
dBc
PIMAGE-RF
Image feedthrough to RF
-0
dBc
LO Buffer: Full and Half Frequency inputs
PLO
LO drive level (see figure 16)
-10
-7
5
dBm
S11-LO1
Mixer input match (LO = 2.1GHz)
LO mode = Hi
-10
dB
S11-LO2
Mixer input match (LO = 1.05GHz)
LO mode = Low
-10
dB
fLO2G
fLO1G
LO2G frequency
range3
LO mode = Hi
1.9
2.1
2.3
GHz
LO1G frequency
range3
LO mode = Low
0.85
1.05
1.25
GHz
Switching2
tRx-Tx
Receive-to-transmit switching time
1
µs
tTx-Rx
Transmit-to-Receive switching time
1
µs
tPOWER UP
Chip enable time
1
µs
tPWR DWN
Chip disable time
1
µs
NOTES:
1. With simple external matching
2. With 50pF coupling capacitors on all RF and IF parts
3. This part has been optimized for the frequency range at 2.4–2.5 GHz. Operation outside this frequency range may yield performance other
than specified in this datasheet.
1997 May 23
5
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45 GHz
SA2420
Table 1. Truth Table
Chip-En
TxRx-SW
LNA-SW
LO-SW
0
X
X
X
Sleep
N/S
N/S
1
0
1
1
Receive
+14dB
2.1GHz
1
0
0
1
Receive
-8dB
2.1GHz
1
0
1
0
Receive
+14dB
1.05GHz
1
0
0
0
Receive
-8dB
1.05GHz
1
1
X
1
Transmit
N/S
2.1GHz
1
1
X
0
Transmit
N/S
1.05GHz
LNA Gain
LO Freq. (Typ)
(RF) pin and use an internal switch for transmitting (up-converting)
or receiving (down-converting) modes. The switch is controlled
externally by high and low logic states. The RF port is matched to
50Ω and has an input IP3 of +2.8dBm (mixer only). The
down-convert mixer is buffered and has open collectors at the pins
to allow for matching to common SAW filters. The up-convert mixer
has differential inputs (IF port) and single-ended output (RF port),
with an input pin to output pin gain of 17dB. The output of the
up-converter is designed for a power level = +3dBm (P-1dB). The
mixers are fed by the two LO options.
FUNCTIONAL DESCRIPTION
The SA2420 is a 2.45GHz transceiver front-end available in the
TSSOP-24 package. This integrated circuit (IC) consists of a low
noise amplifier (LNA) and up- and down-converters. The injection of
the local oscillator (LO) signal has two options: 1) direct injection of
the LO signal at approximately 2GHz, or 2) injection of an LO signal
at approximately 1GHz through an on-chip doubler. The SA2420
functions with a supply voltage range of 3 – 5 V (nominally). There
is an enable/disable switch available to power up/down the entire
chip in 1µs, typically. This transceiver has several unique features.
The available LO options are: direct injection (2.1GHz at the pin) or
through an on-chip doubler. The doubler has a simple LC bandpass
filter (internal) at its output which passes the second harmonic to the
mixers. Through an internal switch (controlled externally), either LO
can be used depending on the designer’s application. If an
application requires the use of a 1.05GHz VCO, then the doubler
option would be used to double the frequency (2 × 1.05GHz =
2.1GHz) before being injected into the mixers. For a 2.1GHz VCO,
the direct option would be used. With this option, the signal passes
through an on-chip buffer and is then injected into the mixers.
The LNA has two operating modes: 1) high gain mode with a gain =
+14dB; and 2) low gain mode with a gain <-10dB. The switch for
this option is internal and is controlled externally by high and low
logic to the pin. When the LNA is switched into the attenuation
mode, active matching circuitry (on-chip) is switched in (reducing the
number of off-chip components required). To reduce power
consumption when the chip is transmitting, the LNA is automatically
switched into a “sleep” mode (internally) without the use of external
circuitry.
The up and down frequency converters are single-ended at the RF
port of the mixers. The up and down converters share the same
1997 May 23
Mode
6
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45 GHz
SA2420
14.8
3.0
50
Vcc = 3V
Vcc = 3V
RX
TX
2.8
14.4
2.6
14.0
30
13.6
2.4
GAIN (dB)
NOISE FIGURE (dB)
CURRENT (mA)
40
NF
GAIN
20
2.2
13.2
2.0
10
–50
0
50
12.8
–50
100
0
50
100
TEMPERATURE (°C)
TEMPERATURE (°C)
SR01458
SR01460
Figure 5. LNA Gain & 50W NF VS Temperature
Figure 3. Rx & Tx Currents VS Temperature
3.0
50
T = 25°C
14.8
Vcc = 3V
NF
NOISE FIGURE (dB)
CURRENT (mA)
40
RX
TX
30
2.8
14.4
2.6
14.0
2.4
13.6
2.2
13.2
20
2.0
2.400
10
2
3
4
5
6
2.450
2.475
2.500
FREQUENCY (GHz)
VOLTS (V)
SR01459
SR01461
Figure 6. LNA Gain & 50W NF VS Frequency
Figure 4. Rx & Tx Currents VS Voltage Supply
1997 May 23
12.8
2.425
7
GAIN (dB)
GAIN
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45 GHz
0
INPUT IP3 AND 1 dB GAIN COMPRESSION (dBm)
18
3.0
T = 25°C
16
2.6
15
2.4
GAIN (dB)
17
2.8
NOISE FIGURE (dB)
SA2420
NF
GAIN
2.2
14
2.0
2
3
4
–5
P–1dB
IP3
–10
–15
–20
13
5
T = 25°C
2
6
3
VOLTS (V)
4
VOLTS (V)
5
6
SR01462
SR01464
Figure 9. LNA Input IP3 and P–1dB VS Supply Voltage
Figure 7. LNA Gain & 50W NF VS Supply Voltage
0
–23.0
T = 25°C
Vcc = 3V
–12.4
Input IP3 and 1 dB Gain compression (dBm)
–12.0
–23.8
–12.8
–24.6
–13.2
–25.4
–13.6
–26.2
–14.0
2.400
2.425
2.450
2.475
S12(dB)
S21 LOSS (dB)
LOSS
S12
–5
P–1dB
IP3
–10
–15
T = 25°C
–27.0
2.500
–20
2.400
2.425
2.450
FREQUENCY (GHz)
Vcc = 3V
2.475
2.500
FREQUENCY (GHz)
SR01463
SR01465
Figure 10. LNA Input IP3 and P–1dB VS Frequency
Figure 8. LNA Loss Mode & S12 VS Frequency
1997 May 23
8
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45 GHz
SA2420
10.0
11.5
T = 25°C
9.6
11.3
P–1dB
IP3
10
5
9.2
11.1
NF
GAIN
10.9
8.8
10.7
8.4
CONVERSION GAIN (dB)
15
SSB NOISE FIGURE (dB)
LNA LOSS MDOE INPUT IP3 AND P–1dB (dBm)
20
T = 25°C
0
8.0
10.5
2
3
4
VOLTS (V)
5
2
6
3
5
4
VOLT (V)
6
SR01468
SR01466
Figure 11. LNA Loss Mode Input IP3 and P–1dB VS Voltage
Figure 13. Rx Mixer Conv. Gain & SSB NF VS Supply Voltage
5
INPUT IP3 AND 1 dB GAIN COMPRESSION (dBm)
9.8
11.8
VCC = 3V
SSB NOISE FIGURE (dB)
11.0
9.0
8.6
10.6
10.2
8.2
9.8
7.8
CONVERSION GAIN (dB)
9.4
11.4
NF
GAIN
9.4
7.4
–50
0
50
IP3
–5
2
100
TEMPERATURE (°C)
3
4
VOLTS (V)
5
6
SR01469
SR01467
Figure 12. Rx Mixer Conv. Gain & SSB NF VS Temperature
1997 May 23
P–1dB
–10
7.0
9.0
T = 25°C
0
Figure 14. Rx Mixer Input IP3 and P–1dB VS Supply Voltage
9
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45 GHz
SA2420
22
INPUT IP3 AND 1 dB GAIN COMPRESSION (dBm)
5
12
CURRENT (mA)
0
P–1dB
VCC = 3V
T = 25°C
IP3
–5
20
6
18
0
SATURATED OUTPUT POWER (dB)
GAIN
POWER
VCC = 3V
–10
2.400
2.425
2.450
FREQUENCY (GHz)
2.475
16
–50
2.500
0
–6
100
50
TEMPERATURE (°C)
SR01470
SR01472
Figure 15. Rx Mixer Output IP3 and P–1dB VS Frequency
Figure 17. Tx Mx conv. Gain and Output Pwr VS Temp.
0
10
LO AND IMAGE SUPPRESSION (dbc)
Rx MIXER CONVERSION GAIN (dB)
LO
5
0
FULL (LO = 2.1 GHZ)
DOUBLER (LO = 1.05 GHZ
–5
–10
–30
–6
–12
–18
–24
–30
–24
–18
–12
LO POWER (dBM)
0
–6
–30
–20
0
–10
LO POWER (dBM)
SR01473
SR01471
Figure 16. Rx Mixer Conversion Gain VS LO Power
1997 May 23
IMAGE
Figure 18. Tx Mixer LO and Image Suppression
10
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45 GHz
21.0
20.4
T = 25°C
13.4
19.8
13.2
19.2
NF
GAIN
13.0
CONVERSION GAIN (dB)
SSB NOISE FIGURE (dB)
13.6
OUTPUT IP3 AND 1 dB GAIN COMPRESSION (dBm)
13.8
18.6
12.8
18.0
2
4
VOLTS (V)
3
SA2420
6
5
16
VCC = 3V
10
P–1dB
IP3
4
–2
–50
0
50
100
TEMPERATURE (°C)
SR01474
SR01479
Figure 19. Tx Mixer Gain & NF VS Supply Voltage
Figure 21. Tx Mixer Output IP3 and P–1dB VS Temperature
15
OUTPUT IP3 AND 1 DB GAIN COMPRESSION (dBm)
12
OUTPUT P–1dB AND IP3 (dBM)
T = 25°C
10
P–1dB
IP3
5
0
2
3
4
5
6
VOLTS (V)
VCC = 3V
T = 25°C
P–1dB
IP3
6
3
0
2.400
2.425
2.450
2.475
2.500
FREQUENCY (GHz)
SR01475
SR01480
Figure 20. Tx Mixer Output P–1dB and IP3 Vs Voltage
1997 May 23
9
Figure 22. Tx Mixer Output IP3 and P–1dB VS Frequency
11
1997 May 23
Figure 23.
12
SW1
C7
10pF
C6
100pF
C4
3.3pF
L1
47nH
L0
R1
50 W
L3
33nH
C5
10pF
L2
27nH
C3
10pF
C8
10pF
C2
1.5pF
C10
33pF
C9
33pF
300
300
300
300
LOM
ENABLE
V CC LO
13
14
15
GND
LOP
LO SW
16
17
18
GND
Tx/Rx SW
GND
19
20
21
22
23
24
GND
Tx IF IN
Tx IF IN
RF I/O
GND
ATTEN SW
GND
LNA OUT
V
CC
SA2420
2.45 GHz LOW VOLTAGE
RF TRANSCEIVER
12
11
10
9
8
7
Rx IF OUT
Rx IF OUT
5
6
GND
GND
LNA IN
GND
4
3
2
1
260
SW2
SW3
SW4
SW5
200
C13
1.5pF
VCC
C11
33pF
C14
33pF
L4
100nH
C18
(not used)
C15
1.5pF
VCC
C12
100nF
RF I/O
LNA OUT
Low voltage RF transceiver — 2.45 GHz
XXX: 10 MILS WIDE, XXX MILS LONG ON 31 MILS
THICK OF NATURAL FR–4 SUBSTRATE
GND
VCC
TxIN
(352 MHz)
RxOUT
(352 MHz)
VCC
LNA IN
C1
1.5pF
C16
100nF
+
C17
10uF
145
U1
VCC
Philips Semiconductors
Product specification
SA2420
SR01481
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45 GHz
SA2420
SR01485
Figure 24. SA2420 RF Transciever
1997 May 23
13
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45GHz
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm
1997 May 23
14
SA2420
SOT355-1
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45GHz
NOTES
1997 May 23
15
SA2420
Philips Semiconductors
Product specification
Low voltage RF transceiver — 2.45GHz
SA2420
DEFINITIONS
Data Sheet Identification
Product Status
Definition
Objective Specification
Formative or in Design
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Preliminary Specification
Preproduction Product
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Product Specification
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 05–97
Document order number:
1997 May 23
16
9397 750 03302