SEMICONDUCTOR TECHNICAL DATA The MC74VHCT573A is an advanced high speed CMOS octal latch with 3–state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. This 8–bit D–type latch is controlled by a latch enable input and an output enable input. When the output enable input is high, the eight outputs are in a high impedance state. The VHCT inputs are compatible with TTL levels. This device can be used as a level converter for interfacing 3.3V to 5.0V, because it has full 5V CMOS level output swings. The VHCT573A input and output (when disabled) structures provide protection when voltages between 0V and 5.5V are applied, regardless of the supply voltage. These input and output structures help prevent device destruction caused by supply voltage – input/output voltage mismatch, battery backup, hot insertion, etc. • • • • • • • • • • • DW SUFFIX 20–LEAD SOIC PACKAGE CASE 751D–04 DT SUFFIX 20–LEAD TSSOP PACKAGE CASE 948E–02 High Speed: tPD = 7.7ns (Typ) at VCC = 5V Low Power Dissipation: ICC = 4µA (Max) at TA = 25°C TTL–Compatible Inputs: VIL = 0.8V; VIH = 2.0V Power Down Protection Provided on Inputs and Outputs Balanced Propagation Delays Designed for 4.5V to 5.5V Operating Range Low Noise: VOLP = 1.6V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300mA ESD Performance: HBM > 2000V; Machine Model > 200V Chip Complexity: 234 FETs or 58.5 Equivalent Gates M SUFFIX 20–LEAD SOIC EIAJ PACKAGE CASE 967–01 ORDERING INFORMATION MC74VHCTXXXADW SOIC MC74VHCTXXXADT TSSOP MC74VHCTXXXAM SOIC EIAJ PIN ASSIGNMENT OE 1 20 VCC D0 2 19 Q0 D1 3 18 Q1 D2 4 17 Q2 D3 5 16 Q3 D4 6 15 Q4 D5 7 14 Q5 Q5 D6 8 13 Q6 Q6 D7 9 12 Q7 Q7 GND 10 11 LE LOGIC DIAGRAM D0 D1 D2 DATA INPUTS D3 D4 D5 D6 D7 LE OE 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 Q0 Q1 Q2 Q3 Q4 NONINVERTING OUTPUTS 11 1 FUNCTION TABLE INPUTS OE LE D Q L L L H H H L X H L X X H L No Change Z 6/97 Motorola, Inc. 1997 1 OUTPUT REV 0 MC74VHCT573A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS* Symbol Value Unit DC Supply Voltage – 0.5 to + 7.0 V Vin DC Input Voltage – 0.5 to + 7.0 V Vout DC Output Voltage – 0.5 to + 7.0 – 0.5 to VCC + 0.5 V IIK Input Diode Current – 20 mA IOK Output Diode Current (VOUT < GND; VOUT > VCC) ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 75 mA PD Power Dissipation in Still Air, 500 450 mW Tstg Storage Temperature – 65 to + 150 _C VCC Parameter Outputs in 3–State High or Low State SOIC Packages† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open. v v * Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. †Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter DC Supply Voltage Vin DC Input Voltage Vout DC Output Voltage TA Operating Temperature tr, tf Input Rise and Fall Time Min Max Unit 4.5 5.5 V 0 5.5 V 0 0 5.5 VCC V – 40 + 85 _C 0 20 ns/V Outputs in 3–State High or Low State VCC =5.0V ±0.5V DC ELECTRICAL CHARACTERISTICS S b l Symbol P Parameter T Test C Conditions di i VCC V TA = 25°C Min VIH Minimum High–Level Input Voltage 4.5 to 5.5 VIL Maximum Low–Level Input Voltage 4.5 to 5.5 VOH Minimum High–Level Output Voltage Vin = VIH or VIL IOH = – 50µA 4.5 4.4 IOH = – 8mA 4.5 3.94 Maximum Low–Level Output Voltage Vin = VIH or VIL IOL = 50µA 4.5 IOL = 8mA VOL Typ TA = – 40 to 85°C Max 2.0 Min Max 2.0 0.8 4.5 U i Unit V 0.8 4.4 V V 3.80 0.0 0.1 0.1 4.5 0.36 0.44 V Maximum Input Leakage Current Vin = 5.5 V or GND 0 to 5.5 ± 0.1 ± 1.0 µA IOZ Maximum 3–State Leakage Current Vin = VIL or VIH Vout = VCC or GND 5.5 ± 0.25 ± 2.5 µA ICC Maximum Quiescent Supply Current Vin = VCC or GND 5.5 4.0 40.0 µA Iin MOTOROLA 2 VHC Data – Advanced CMOS Logic DL203 — Rev 1 MC74VHCT573A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS Symbol Parameter VCC V Test Conditions ICCT Quiescent Supply Current Per Input: VIN = 3.4V Other Input: VCC or GND IOPD Output Leakage Current VOUT = 5.5V TA = 25°C Min TA = – 40 to 85°C Typ Max Min Max Unit 5.5 1.35 1.50 mA 0 0.5 5.0 µA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns) TA = 25°C S b l Symbol P Parameter T Test C Conditions di i Min TA = – 40 to 85°C Typ Max Min Max U i Unit tPLH, tPHL Maximum Propagation Delay, LE to Q VCC = 5.0 ± 0.5V CL = 15pF CL = 50pF 7.7 8.5 12.3 13.3 1.0 1.0 13.5 14.5 ns tPLH, tPHL Maximum Propagation Delay, D to Q VCC = 5.0 ± 0.5V CL = 15pF CL = 50pF 5.1 5.9 8.5 9.5 1.0 1.0 9.5 10.5 ns tPZL, tPZH Output Enable Time, OE to Q VCC = 5.0 ± 0.5V RL = 1kΩ CL = 15pF CL = 50pF 6.3 7.1 10.9 11.9 1.0 1.0 12.5 13.5 ns tPLZ, tPHZ Output Disable Time, OE to Q VCC = 5.0 ± 0.5V RL = 1kΩ CL = 50pF 8.8 11.2 1.0 12.0 ns Output to Output Skew VCC = 5.5 ± 0.5V (Note 1.) CL = 50pF 1.0 1.0 ns 10 10 pF tOSLH, tOSHL Cin Cout Maximum Input Capacitance 4 Maximum Three–State Output Capacitance (Output in High–Impedance State) 6 pF Typical @ 25°C, VCC = 5.0V CPD P Power Dissipation Di i i C Capacitance i (N (Note 2 2.)) pF F 25 1. Parameter guaranteed by design. tOSLH = |tPLHm – tPLHn|, tOSHL = |tPHLm – tPHLn|. 2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 8 (per latch). CPD is used to determine the no–load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50 pF, VCC = 5.0V) TA = 25°C S b l Symbol P Parameter Typ Max U i Unit VOLP Quiet Output Maximum Dynamic VOL 1.2 1.6 V VOLV Quiet Output Minimum Dynamic VOL –1.2 –1.6 V VIHD Minimum High Level Dynamic Input Voltage 2.0 V VILD Maximum Low Level Dynamic Input Voltage 0.8 V TIMING REQUIREMENTS (Input tr = tf = 3.0ns) TA = 25°C S b l Symbol P Parameter T Test C Conditions di i Typ TA = – 40 to 85°C Limit Limit U i Unit Minimum Pulse Width, LE VCC = 5.0 ±0.5V 6.5 8.5 ns tsu Minimum Setup Time, D to LE VCC = 5.0 ± 0.5V 1.5 1.5 ns th Minimum Hold Time, D to LE VCC = 5.0 ± 0.5V 3.5 3.5 ns tw(h) VHC Data – Advanced CMOS Logic DL203 — Rev 1 3 MOTOROLA MC74VHCT573A SWITCHING WAVEFORMS tw 3V D LE 3V 1.5V 1.5V GND GND tPLH tPHL Q tPHL tPLH VOH 1.5V VOH 1.5V Q VOL VOL Figure 1. Figure 2. 3V 1.5V OE VALID tPZL GND tPLZ 1.5V Q tPZH Q 3V D HIGH IMPEDANCE 1.5V GND tsu th VOL +0.3V tPHZ 3V LE VOH –0.3V 1.5V 1.5V GND HIGH IMPEDANCE Figure 3. Figure 4. TEST CIRCUITS TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST OUTPUT DEVICE UNDER TEST CL* * Includes all probe and jig capacitance CL* CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. * Includes all probe and jig capacitance Figure 5. MOTOROLA 1 kΩ Figure 6. 4 VHC Data – Advanced CMOS Logic DL203 — Rev 1 MC74VHCT573A EXPANDED LOGIC DIAGRAM D0 2 D Q 19 Q0 LE D1 3 D Q 18 Q1 LE D2 4 D Q 17 Q2 LE D3 5 D Q 16 Q3 LE D4 6 D Q 15 Q4 LE D5 7 D Q 14 Q5 LE D6 8 D Q 13 Q6 LE D7 9 D Q 12 Q7 LE LE OE VHC Data – Advanced CMOS Logic DL203 — Rev 1 11 1 5 MOTOROLA MC74VHCT573A OUTLINE DIMENSIONS DW SUFFIX PLASTIC SOIC PACKAGE CASE 751D–04 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.150 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION. –A– 20 11 –B– 10X P 0.010 (0.25) 1 M B M 10 20X D 0.010 (0.25) T A M B S DIM A B C D F G J K M P R J S F R X 45 _ C –T– G 18X SEATING PLANE MILLIMETERS MIN MAX 12.65 12.95 7.40 7.60 2.35 2.65 0.35 0.49 0.50 0.90 1.27 BSC 0.25 0.32 0.10 0.25 0_ 7_ 10.05 10.55 0.25 0.75 INCHES MIN MAX 0.499 0.510 0.292 0.299 0.093 0.104 0.014 0.019 0.020 0.035 0.050 BSC 0.010 0.012 0.004 0.009 0_ 7_ 0.395 0.415 0.010 0.029 M K DT SUFFIX PLASTIC TSSOP PACKAGE CASE 948E–02 ISSUE A 20X 0.15 (0.006) T U K REF 0.10 (0.004) S M T U S V S K K1 2X L/2 20 ÍÍÍÍ ÍÍÍÍ ÍÍÍÍ 11 J J1 B –U– L PIN 1 IDENT SECTION N–N 1 10 0.25 (0.010) N 0.15 (0.006) T U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–. M A –V– N F DETAIL E –W– C D G H DETAIL E 0.100 (0.004) –T– SEATING DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 6.40 6.60 4.30 4.50 ––– 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.27 0.37 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.252 0.260 0.169 0.177 ––– 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.011 0.015 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ PLANE MOTOROLA 6 VHC Data – Advanced CMOS Logic DL203 — Rev 1 MC74VHCT573A OUTLINE DIMENSIONS M SUFFIX PLASTIC SOIC EIAJ PACKAGE CASE 967–01 ISSUE O 20 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). LE 11 Q1 E HE 1 M_ L 10 DETAIL P Z D VIEW P e A c A1 b 0.13 (0.005) M 0.10 (0.004) DIM A A1 b c D E e HE L LE M Q1 Z MILLIMETERS MIN MAX ––– 2.05 0.05 0.20 0.35 0.50 0.18 0.27 12.35 12.80 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 _ 0_ 0.70 0.90 ––– 0.81 INCHES MIN MAX ––– 0.081 0.002 0.008 0.014 0.020 0.007 0.011 0.486 0.504 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 ––– 0.032 Motorola reserves the right to make changes without further notice to any products herein. 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