VISHAY SI9750

Si9750
Vishay Siliconix
Hot Swap
Si9750
In-Rush Current Limit MOSFET Driver
FEATURES
• 2.9- to 13-V Input Operating Range
• Microprocessor RESET
• Integrated High-Side Driver for N-Channel MOSFET
• Programmable di/dt Current
DESCRIPTION
The Si9750 current limit MOSFET interface IC is designed to
operate between a power source and a load using a low onresistance power MOSFET with a sense terminal or in
conjunction with a low ohmic sense resistor. The Si9750
current limiter prevents source and load transients during hot
swap and power-on with programmable dv/dt and di/dt. Both
turn-on and steady-state current limits can be individually
programmed, providing protection against short circuits.
Power on RESET and logic controls allow complete
microprocessor interfacing. The RESET function of the
Si9750 is industry-standard with full programmability.
The Si9750 is available in a 16-pin SOIC package and is rated
over the commercial temperature range (0 to 70°C).
FUNCTIONAL BLOCK DIAGRAM
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Si9750
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to Ground
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Boost Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 V
Power Dissipation (package)a
16-Pin SOICb. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Inputs/Outputs
(except Gate, Boost and VRST) . . . . . . . . . . . . . . . -0.3 to VDD + 0.3 V
Thermal Impedance (ΘJA) . . . . . . . . . . . . . . . . . . . . . . . . . . . 140°C/W
VRST Input Current (0 < VRST < 15 V) . . . . . . . . . . . . . . . . . . . .20 mA
Notes
Inputs/Outputs Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA
a. Device mounted with all leads soldered or welded to PC board.
RESET Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 mA
b. Derate 7.2 mW/°C above 25°C.
STATUS Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 mA
* Exposure to Absolute Maximum rating conditions for extended periods may affect device reliability. Stresses above Absolute Maximum rating may cause
permanent damage. Functional operation at conditions other than the operating conditions specified is not implied. Only one Absolute Maximum rating should be
applied at any one time
SPECIFICATIONS
Limits
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
2.9 V ≤ VDD ≤ 13.2 V
HI/LO = GND, RBIAS = 12.5 kΩ
LBOOST = 100 µH, CBOOST = 100 nF
IQ
ENABLE = Logic Low
0 to 70°C
Mina
Typb
Maxa
Unit
4
8
mA
Supply
Quiescent Current
Logic
Enable Turn-On Voltage
VEN(on)
Enable Turn-Off Voltage
VEN(off)
Enable Source Current
IENSRC
Turn-On Time
tON
Turn-Off Time
tOFF
0.3 x VDD
0.7 x VDD
VENABLE = 0V
40
120
5
tON(BST)
See Figure 4.
600
tOFF Initial Short Circuit
tOFF(ISC)
CGATE = 33 nF, See Figure 6.
10
tOFF Short Circuit
tOFF(SC)
CGATE = 33 nF, See Figure 7.
2
VSTAT
ISINK = 200 µA
0.4
tSTDLY
See Figure 8.
Status Output Delay Time
µA
5
See Figure 3.
Turn-On Boost
Status Output Voltage
V
µs
V
µs
Status Threshold
VSTATTHR
0.85 x VDD
HI/LO Turn-On Voltage
VHILO(on)
0.7 x VDD
HI/LO Turn-Off Voltage
VHILO(off)
0.95 x VDD
V
0.3 x VDD
Gate Drive
Enhancement Voltage
(VGATE - VSENSE)
Source Current
Sink Current
S-60752—Rev. C, 05-Apr-99
2
VGS
ISOURCE
ISINK
VCBOOST = 9 V
8.5
10.5
15
1.06
1.30
1.54
1.6
2.6
3.7
V
mA
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SPECIFICATIONS
Limits
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
2.9 V ≤ VDD ≤ 13.2 V
HI/LO = GND, RBIAS = 12.5 kΩ
LBOOST = 100 µH, CBOOST = 100 nF
0 to 70°C
Mina
Typb
Maxa
Unit
Current Sense Circuit
Current Sense Amplifier
Common Mode Range
VCMR
0
VDD + 0.3
V
Current Sense Amplifier
Voltage Offset
VOS
-3
3
mV
Current Sense Amplifier
Bias Current
ISOS
RLIMSET Reference Current
Normal Operation
IRLIMSET
-0.2
18
Current Sense Amplifier
Hysteresis
VHYST
Current Sense Amplifier
Series Offset
VSOS
HI/LO = VDD, VCMR > 0.5 V
VOP(rst)
IOUT = 1 mA, VDD > 2 V
µA
19.5
21
12
mV
20
Power On Reset
RESET Output Voltage
RESET Output
Hysteresisc
0.4
VHYST
2
See Note c
V
mV
RESET Comparator
Input Threshold
VRST
RESET Comparator
Offset Voltaged
VRBIAS
0.5
mV
RESET Comparator
Input Bias Current
IBIAS
-0.2
µA
RESET Timer Delay
tRSTD
CRST = 15 nF, See Figure 8.
110
150
190
µs
RETRY
tRETRY
CRETRY = 100 nF
70
130
200
ms
1.223
1.250
1.277
V
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production test.
c. In a practical situation, VHYST is multiplied by ratio of a resistor divider chain. For VDD = 13.2 V, VHYST = 20 mV.
d. The RESET comparator input threshold specification (VRST) includes the RESET comparator offset voltage.
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Si9750
Vishay Siliconix
PIN CONFIGURATION
PIN DESCRIPTION
Pin Number
Function
Description
1
BOOST
Output of on-chip Boost converter. A 100-nF capacitor should be connected between BOOST and GND
2
VDD
Positive supply pin.
3
GATE
Connection to external power MOSFET gate.
4
LOAD
Connection to positive supply side of LOAD.
5
SENSE
Connects external sense resistor of a sensefet sense pin to SENSE input of overcurrent trip comparator.
A standard MOSFET may also be used in conjunction with a low ohmic value shunt resistor.
6
LIMSET
Connects overcurrent limit set resistor RLIMSET to the reference input of overcurrent trip comparator.
7
HI/LO
CMOS logic input to control the overcurrent trip comparator sensitivity at power-on. HI/LO should be
connected to GND for low Capacitive loads and to VDD for high capacitive loads.
8
ENABLE
9
RBIAS
A resistor connected from this pin to GND programs the reference bias current for the overcurrent trip
comparator resistor RLIMSET and the GATE(on) charge current. See Functional Description for equations.
10
VRST
Input to voltage monitor comparator.
11
STATUS
Open drain NMOS output. This pin is driven low when the current limiter is enabled and the LOAD
voltage is greater than 90% of VDD.
12
RESET
Open drain NMOS output. This pin is driven low during power on reset or when VRST is lower than the
internal 1.25-V reference.
13
CRETRY
A capacitor connected from this pin to GND programs the retry timer.
14
CRST
A capacitor connected from this pin to GND programs the reset timer.
15
GND
Negative supply pin.
16
COIL
Connection to Boost converter inductor.
S-60752—Rev. C, 05-Apr-99
4
CMOS logic input to turn IC on or off. GATE voltage remains low when ENABLE is high.
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FUNCTIONAL DESCRIPTION
The Si9750 together with an n-channel MOSFET provides the
following functions:
• limits di/dt current for hot insertion applications
• provides complete short circuit protection
• high-side drive allows n-channel MOSFET to be used, for
lower power dissipation
• industry-standard microprocessor reset function
• logic control input and outputs
Setting the Current Limit
(SENSE, HI/LO pins, RLIMSET, RSENSE)
The steady state current is set by the equation:
(1)
Due to the highly capacitive nature of some loads, the Si9750
has an option to increase the current limit point to a much
higher level at turn-on. In this case, turn-on is defined as
VGATE < VDD + 7.8 V. This function is implemented with the HI/
LO pin. If the HI/LO pin is tied low the current limit is 20%
higher during turn-on than the steady state current limit point.
I LOAD × R SENSE > 1.2 × I BIAS × R LIMSET
( with pin HI/LO=Low )
I LOAD × R SENSE > 1.2 × I BIAS × R LIMSET + I BIAS ( 1kΩ + R HI ) (3)
( HI/LO=High )
Notice that any current limit can be set at turn-on using an
optional resistor, RHI.
Relaxation Mode Current Limit
(CRETRY pin)
The current limit point is determined by the voltage across
RSENSE, the value of RLIMSET, and the bias current. The
current limit circuit is shown in Figure 1.
I LOAD × R SENSE > I BIAS × R LIMSET
If a higher current limit is needed at start-up, the HI/LO pin
can be tied high. The equation becomes:
In an overload condition, the Si9750 will go into a relaxation
mode current limit operation that not only protects the source
and load, but also reduces the power dissipated in the
MOSFET. When an overload is detected, the circuit quickly
turns off, then goes into a retry mode whereby the current is
ramped up slowly. If the fault still exists, the current will ramp
down again. This sequence will repeat indefinitely at a period
defined by 106 x CRETRY until the fault is removed. Typically,
capacitors in the range of 1 nF to 1 µF can be used on
CRETRY, but the period should be >50 ms.
(2)
FIGURE 1.
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di/dt Limiting On Hot and Cold Insertion (GATE pin)
The GATE pin provides a constant current source that is used
to control the rate of rise of the gate of the MOSFET, and
hence to control the di/dt of the load and source current. The
equation that governs the gate current is:
12
I SOURCE = 1.25V × --------------- = 12mA
R BIAS
(4)
( for R BIAS = 12.5kΩ )
Typically, a 33-nF capacitor should be connected from the
GATE pin to ground. If a large ISOURCE is needed for high di/
dt, a 330-Ω resistor in series with CGATE may be necessary to
prevent oscillation. In the case that VDD > 6 V, a resistor of
approximately 330 Ω is also recommended in series with the
gate (Figure 1).
Reference Bias Current
(RBIAS pin)
This pin sets the internal current used by RLIMSET to
determine all the current limit points. Typically RBIAS =
12.5 kΩ which sets a 20-µA bias current. The equation which
relates RBIAS to IBIAS is:
1.25V I BIAS = -----------------------= 20µA
5 × R BIAS
Logic Control
(STATUS, ENABLE, RESET, VRST and CRST pins)
STATUS. The status monitor detects when the load voltage is
90% of input voltage, VLOAD > 0.9 x VDD. This pin is an opendrain NMOS output, capable of sinking 200 µA at VOL = 0.4 V.
If this pin is used in conjunction with the ENABLE of another
unit, power supply sequencing (or daisy-chaining) is easily
implemented.
ENABLE. This CMOS logic compatible input serves as the
on/off control pin. This pin has 40-µA minimum pull-up to
VDD.
RESET (VRST, CRST, RESET pins). This is a standard
implementation of the microprocessor reset function. A
comparator looks at the voltage on VRST pin and compares it
with 1.25 V. This function is programmable by using an
external voltage divider. When VRST is higher than 1.25 V, the
reset signal is delayed by the CRST pin, defined by Equation
(6) and then goes high (Figure 8).
4
Reset delay t RSTD ≈ 10 × C RST
(6)
(5)
( for R BIAS = 12.5kΩ )
Power on Reset (POR)
(VDD pin)
This function monitors the voltage on the VDD pin and signals
the system if all input voltage requirements have been met. At
turn-on when VDD > 2.7 V " 200 mV, a POR signal is
generated for a duration of 100 µs. After this point the system
is released into operation. If VDD falls below 2.7 V " 200 mV, a
second POR signal will be generated. If two POR signals are
detected, this indicates that the source for VDD is not capable
of supplying the load current. The IC then turns off the
MOSFET and initiates its retry period, hence fully protecting
the MOSFET from an over-power condition.
Boost Converter
(COIL, BOOST pins)
FIGURE 2. Typical Operation Under Start-up Condition with
an Overcurrent Fault Applied to the Output
The boost converter generates the gate drive for the external
n-channel MOSFET. This is limited to typically VDD + 11 V.
The boost inductor should typically be 100 µH, <3.5 Ω,
>180 mA dc, and the boost capacitor should be 100 nF.
S-60752—Rev. C, 05-Apr-99
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
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SWITCHING TIME TEST CIRCUITS
FIGURE 3. Normal-Mode Operation
FIGURE 4. Timing Definition with ENABLE Already On
FIGURE 5. Start of Boost Converter
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FIGURE 6. First Short Circuit
FIGURE 7. Relaxation-Mode Current Limit
SWITCHING TIME TEST CIRCUITS
FIGURE 8. STATUS and RESET
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