CMXD2004 SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE SOT-26 CASE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004 type contains three (3) Isolated High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for applications requiring high voltage capability. Marking code is X04. MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage VR 240 V Peak Repetitive Reverse Voltage VRRM 300 V Peak Repetitive Reverse Current IO IF 200 mA Continuous Forward Current 225 mA Peak Repetitive Forward Current IFRM 625 mA Forward Surge Current, tp=1 ms IFSM 4000 mA Forward Surge Current, tp=1 s IFSM 1000 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA 65 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNIT IR IR VR=240V 100 nA VR=240V, TA=150°C 100 µA BVR VF IR=100µA IF=100mA CT VR=0, f=1 MHz trr IF=IR=30mA, Rec. To 3.0mA, RL=100Ω 300 V 1.0 V 5.0 pF 50 ns R1 ( 14-Sept 2000) Central TM CMXD2004 SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE Semiconductor Corp. MECHANICAL OUTLINE - SOT-26 CASE All Dimensions in Inches (mm) Pin Configuration Lead Code 1) 2) 3) 4) 5) 6) Anode 1 Anode 2 Anode 3 Cathode 3 Cathode 2 Cathode 1 R1 ( 14-Sept 2000)