CMXD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD4448 type contains three (3) Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, and designed for applications requiring high speed switching. MARKING CODE: X48 SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VR 75 VRRM IF 100 V 250 mA IFRM IFSM 500 mA 4.0 A IFSM PD 1.0 A 350 mW TJ, Tstg ΘJA V -65 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX 25 UNITS IR VR=20V BVR BVR IR=5.0μA IR=100μA nA VF IF=100mA 1.0 V CT VR=0, f=1.0MHz 4.0 pF trr IR=IF=10mA, Irr=1.0mA, RL=100Ω 4.0 ns 75 V 100 V R5 (12-February 2010) CMXD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: X48 R5 (12-February 2010) w w w. c e n t r a l s e m i . c o m