SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M MOC217-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting. FEATURES • UL Recognized (File #E90700, Volume 2) • VDE Recognized (File #13616) (add option “V” for VDE approval, i.e., MOC215V-M) • Convenient Plastic SOIC–8 Surface Mountable Package Style • Low LED Input Current Required, for Easier Logic Interfacing • Standard SOIC–8 Footprint, with 0.050” Lead Spacing ANODE 1 8 N/C • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • High Input–Output Isolation of 2500 Vac (rms) Guaranteed APPLICATIONS • Low power Logic Circuits CATHODE 2 7 BASE N/C 3 6 COLLECTOR N/C 4 5 EMITTER • Interfacing and coupling systems of different potentials and impedances • Telecommunications equipment • Portable electronics Marking Information: • MOC215-M = 215 • MOC216-M = 216 • MOC217-M = 217 © 2002 Fairchild Semiconductor Corporation Page 1 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M MOC217-M ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified) Rating Symbol Value Unit IF 60 mA IF (pk) 1.0 A Reverse Voltage VR 6.0 V LED Power Dissipation @ TA = 25°C Derate above 25°C PD 90 0.8 mW mW/°C Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 70 V Emitter-Collector Voltage VECO 7.0 V Collector Current-Continuous IC 150 mA Detector Power Dissipation @ TA = 25°C Derate above 25°C PD 150 1.76 mW mW/°C VISO 2500 Vac(rms) Total Device Power Dissipation @ TA = 25°C Derate above 25°C PD 250 2.94 mW mW/°C Ambient Operating Temperature Range TA -40 to +100 °C Tstg -40 to +125 °C EMITTER Forward Current - Continuous Forward Current - Peak (PW = 100 µs, 120 pps) DETECTOR TOTAL DEVICE Input-Output Isolation Voltage(1,2) (60 Hz, 1 minute duration) Storage Temperature Range © 2002 Fairchild Semiconductor Corporation Page 2 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M MOC217-M ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified) Characteristic Symbol Min Typ** Max Unit (IF = 1.0 mA) VF — 1.07 1.3 V (VR = 6.0 V) IR — 0.001 100 µA C — 18 — pF — 1.0 50 nA — 1.0 — µA EMITTER Forward Voltage Reverse Leakage Current Capacitance DETECTOR Collector-Emitter Dark Current (VCE = 5.0 V, TA = 25°C) (VCE = 5.0 V, TA = 100°C) ICEO Collector-Emitter Breakdown Voltage (IC = 100 µA) BVCEO 30 100 — V Emitter-Collector Breakdown Voltage (IE = 100 µA) BVECO 7.0 10 — V (f = 1.0 MHz, VCE = 0) CCE — 7.0 — pF (IF = 1.0 mA, VCE = 5.0 V) CTR 20 50 100 — — — — — — % Collector-Emitter Saturation Voltage (IC = 100µA, IF = 1.0mA) VCE(sat) — — 0.4 V Turn-On Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, fig. 10) ton — 4.0 — µs Turn-Off Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, fig. 10) toff — 4.0 — µs Rise Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, fig. 10) tr — 3.0 — µs Fall Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, fig. 10) tf — 3.0 — µs (f = 60 Hz, t = 1.0 min.) VISO 2500 — — Vac(rms) (VI-O = 500 V) RISO 1011 — — Ω (VI-O = 0, f = 1.0 MHz) CISO — 0.2 — pF Collector-Emitter Capacitance COUPLED Output Collector Current(4) MOC215-M MOC216-M MOC217-M Input-Output Isolation Voltage(1,2,3) Isolation Resistance(2) Isolation Capacitance(2) ** Typical values at TA = 25°C unless otherwise noted. 1. Input-Output Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. 3. VISO rating of 2,500 VAC(RMS) for t = 1 minute is equivalent to a rating of 3,000 VAC(RMS) for t = 1 second. 4. Current Transfer Ratio (CTR) = IC/IF x 100%. © 2002 Fairchild Semiconductor Corporation Page 3 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M MOC217-M Fig. 2 Output Curent vs. Input Current Fig. 1 LED Forward Voltage vs. Forward Current 1.8 1.7 VF - FORWARD VOLTAGE (V) 1.6 1.5 1.4 TA = 55°C 1.3 1.2 TA = 25°C 1.1 TA = 100°C 1.0 1 10 100 I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 VCE = 5V NORMALIZED TO IF = 10mA 1 0.1 IF - LED FORWARD CURRENT (mA) 0.01 0.1 1 Fig. 3 Output Current vs. Ambient Temperature 10 100 IF - LED INPUT CURRENT (mA) 10 I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) Fig. 4 Output Current vs. Collector - Emitter Voltage 1.6 1 NORMALIZED TO TA = 25 o C 0.1 -80 -60 -40 -20 0 20 40 60 80 100 1.4 1.2 1.0 0.8 0.6 0.4 0.2 I F = 10mA NORMALIZED TO VCE = 5V 0.0 0 120 1 Fig. 5 Dark Current vs. Ambient Temperature 3 4 5 6 7 8 9 10 Fig. 6 Normalized ton vs. RBE 4.0 10000 3.5 VCE=10V 1000 VCC = 10V IC = 2mA RL = 100Ω Normalized to: ton at RBE = Open 3.0 2.5 100 NORMALIZED ton I CEO - COLLECTOR -EMITTER DARK CURRENT (nA) 2 VCE - COLLECTOR -EMITTER VOLTAGE (V) o TA - AMBIENT TEMPERATURE ( C) 10 2.0 1.5 1.0 1 0.5 0.0 0.1 0 20 40 © 2002 Fairchild Semiconductor Corporation 60 80 100 Page 4 of 9 0.01 0.1 1 10 100 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M Fig. 7 Normalized toff vs. RBE Fig. 8 CTR vs. RBE (Saturated) 1.0 1.6 1.4 MOC217-M VCC = 10V IC = 2mA RL = 100Ω Normalized to: toff at RBE = Open 0.9 IF = 10mA 0.8 1.2 NORMALIZED CTR NORMALIZED toff 0.7 1.0 0.8 0.6 0.6 0.5 IF = 5mA IF = 20mA 0.4 0.3 0.4 0.2 0.2 VCE = 0.3V, TA = 25°C Normalized to: CTR at RBE = Open 0.1 0.0 0.0 0.01 0.1 1 10 100 10 RBE - BASE RESISTANCE (MΩ) 100 1000 RBE - BASE RESISTANCE (kΩ) Fig. 9 CTR vs. RBE (Unsaturated) 1.0 0.9 0.8 IF = 10mA NORMALIZED CTR 0.7 0.6 0.5 IF = 20mA IF = 5mA 0.4 0.3 0.2 VCE = 5V, TA = 25°C Normalized to: CTR at RBE = Open 0.1 0.0 10 100 1000 RBE - BASE RESISTANCE (kΩ) © 2002 Fairchild Semiconductor Corporation Page 5 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M MOC217-M TEST CIRCUIT WAVE FORMS VCC = 10V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% R BE tr t on tf t off Adjust I F to produce IC = 2 mA Figure 10. Switching Time Test Circuit and Waveforms Package Dimensions (Surface Mount) 8-Pin Small Outline 0.024 (0.61) SEATING PLANE 0.164 (4.16) 0.144 (3.66) 0.060 (1.52) 0.202 (5.13) 0.182 (4.63) 0.275 (6.99) 0.155 (3.94) 0.010 (0.25) 0.006 (0.16) 0.143 (3.63) 0.123 (3.13) 0.021 (0.53) 0.011 (0.28) 0.008 (0.20) 0.003 (0.08) 0.244 (6.19) 0.224 (5.69) 0.050 (1.27) 0.050 (1.27) TYP Lead Coplanarity : 0.004 (0.10) MAX © 2002 Fairchild Semiconductor Corporation Page 6 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M MOC217-M ORDERING INFORMATION Option Order Entry Identifier Description V V VDE 0084 R1 R1 Tape and reel (500 units per reel) R1V R1V VDE 0884, Tape and reel (500 units per reel) R2 R2 Tape and reel (2500 units per reel) R2V R2V VDE 0884, Tape and reel (2500 units per reel) MARKING INFORMATION 1 215 V X YY S 3 4 2 6 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘3’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code © 2002 Fairchild Semiconductor Corporation Page 7 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M MOC217-M Carrier Tape Specifications 8.0 ± 0.10 3.50 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.10 0.30 MAX 1.75 ± 0.10 5.5 ± 0.05 12.0 ± 0.3 8.3 ± 0.10 5.20 ± 0.20 6.40 ± 0.20 0.1 MAX Ø1.5 ± 0.1/-0 User Direction of Feed Reflow Profile Temperature (°C) 300 230°C, 10–30 s 250 245°C peak 200 150 Time above 183°C, 120–180 sec 100 Ramp up = 2–10°C/sec 50 • Peak reflow temperature: 245°C (package surface temperature) • Time of temperature higher than 183°C for 120–180 seconds • One time soldering reflow is recommended 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) © 2002 Fairchild Semiconductor Corporation Page 8 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M MOC217-M DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2002 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 9 of 9 4/10/03