FAIRCHILD MOC216-M

SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
DESCRIPTION
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a
monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
package. They are ideally suited for high density applications, and eliminate the need for
through–the–board mounting.
FEATURES
• UL Recognized (File #E90700, Volume 2)
• VDE Recognized (File #13616) (add option “V” for VDE approval, i.e., MOC215V-M)
• Convenient Plastic SOIC–8 Surface Mountable Package Style
• Low LED Input Current Required, for Easier Logic Interfacing
• Standard SOIC–8 Footprint, with 0.050” Lead Spacing
ANODE 1
8 N/C
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input–Output Isolation of 2500 Vac (rms) Guaranteed
APPLICATIONS
• Low power Logic Circuits
CATHODE 2
7 BASE
N/C 3
6 COLLECTOR
N/C 4
5 EMITTER
• Interfacing and coupling systems of different potentials and impedances
• Telecommunications equipment
• Portable electronics
Marking Information:
• MOC215-M = 215
• MOC216-M = 216
• MOC217-M = 217
© 2002 Fairchild Semiconductor Corporation
Page 1 of 9
4/10/03
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified)
Rating
Symbol
Value
Unit
IF
60
mA
IF (pk)
1.0
A
Reverse Voltage
VR
6.0
V
LED Power Dissipation @ TA = 25°C
Derate above 25°C
PD
90
0.8
mW
mW/°C
Collector-Emitter Voltage
VCEO
30
V
Collector-Base Voltage
VCBO
70
V
Emitter-Collector Voltage
VECO
7.0
V
Collector Current-Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
PD
150
1.76
mW
mW/°C
VISO
2500
Vac(rms)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD
250
2.94
mW
mW/°C
Ambient Operating Temperature Range
TA
-40 to +100
°C
Tstg
-40 to +125
°C
EMITTER
Forward Current - Continuous
Forward Current - Peak (PW = 100 µs, 120 pps)
DETECTOR
TOTAL DEVICE
Input-Output Isolation Voltage(1,2)
(60 Hz, 1 minute duration)
Storage Temperature Range
© 2002 Fairchild Semiconductor Corporation
Page 2 of 9
4/10/03
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified)
Characteristic
Symbol
Min
Typ**
Max
Unit
(IF = 1.0 mA)
VF
—
1.07
1.3
V
(VR = 6.0 V)
IR
—
0.001
100
µA
C
—
18
—
pF
—
1.0
50
nA
—
1.0
—
µA
EMITTER
Forward Voltage
Reverse Leakage Current
Capacitance
DETECTOR
Collector-Emitter Dark Current
(VCE = 5.0 V, TA = 25°C)
(VCE = 5.0 V, TA = 100°C)
ICEO
Collector-Emitter Breakdown Voltage
(IC = 100 µA)
BVCEO
30
100
—
V
Emitter-Collector Breakdown Voltage
(IE = 100 µA)
BVECO
7.0
10
—
V
(f = 1.0 MHz, VCE = 0)
CCE
—
7.0
—
pF
(IF = 1.0 mA, VCE = 5.0 V)
CTR
20
50
100
—
—
—
—
—
—
%
Collector-Emitter Saturation Voltage
(IC = 100µA, IF = 1.0mA)
VCE(sat)
—
—
0.4
V
Turn-On Time
(IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω, fig. 10)
ton
—
4.0
—
µs
Turn-Off Time
(IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω, fig. 10)
toff
—
4.0
—
µs
Rise Time
(IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω, fig. 10)
tr
—
3.0
—
µs
Fall Time
(IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω, fig. 10)
tf
—
3.0
—
µs
(f = 60 Hz, t = 1.0 min.)
VISO
2500
—
—
Vac(rms)
(VI-O = 500 V)
RISO
1011
—
—
Ω
(VI-O = 0, f = 1.0 MHz)
CISO
—
0.2
—
pF
Collector-Emitter Capacitance
COUPLED
Output Collector Current(4)
MOC215-M
MOC216-M
MOC217-M
Input-Output Isolation Voltage(1,2,3)
Isolation Resistance(2)
Isolation Capacitance(2)
** Typical values at TA = 25°C unless otherwise noted.
1. Input-Output Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. VISO rating of 2,500 VAC(RMS) for t = 1 minute is equivalent to a rating of 3,000 VAC(RMS) for t = 1 second.
4. Current Transfer Ratio (CTR) = IC/IF x 100%.
© 2002 Fairchild Semiconductor Corporation
Page 3 of 9
4/10/03
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
Fig. 2 Output Curent vs. Input Current
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.7
VF - FORWARD VOLTAGE (V)
1.6
1.5
1.4
TA = 55°C
1.3
1.2
TA = 25°C
1.1
TA = 100°C
1.0
1
10
100
I C - OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
VCE = 5V
NORMALIZED TO IF = 10mA
1
0.1
IF - LED FORWARD CURRENT (mA)
0.01
0.1
1
Fig. 3 Output Current vs. Ambient Temperature
10
100
IF - LED INPUT CURRENT (mA)
10
I C - OUTPUT COLLECTOR CURRENT (NORMALIZED)
I C - OUTPUT COLLECTOR CURRENT (NORMALIZED)
Fig. 4 Output Current vs. Collector - Emitter Voltage
1.6
1
NORMALIZED TO TA = 25 o C
0.1
-80
-60
-40
-20
0
20
40
60
80
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I F = 10mA
NORMALIZED TO VCE = 5V
0.0
0
120
1
Fig. 5 Dark Current vs. Ambient Temperature
3
4
5
6
7
8
9
10
Fig. 6 Normalized ton vs. RBE
4.0
10000
3.5
VCE=10V
1000
VCC = 10V
IC = 2mA
RL = 100Ω
Normalized to:
ton at RBE = Open
3.0
2.5
100
NORMALIZED ton
I CEO - COLLECTOR -EMITTER DARK CURRENT (nA)
2
VCE - COLLECTOR -EMITTER VOLTAGE (V)
o
TA - AMBIENT TEMPERATURE ( C)
10
2.0
1.5
1.0
1
0.5
0.0
0.1
0
20
40
© 2002 Fairchild Semiconductor Corporation
60
80
100
Page 4 of 9
0.01
0.1
1
10
100
4/10/03
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
Fig. 7 Normalized toff vs. RBE
Fig. 8 CTR vs. RBE (Saturated)
1.0
1.6
1.4
MOC217-M
VCC = 10V
IC = 2mA
RL = 100Ω
Normalized to:
toff at RBE = Open
0.9
IF = 10mA
0.8
1.2
NORMALIZED CTR
NORMALIZED toff
0.7
1.0
0.8
0.6
0.6
0.5
IF = 5mA
IF = 20mA
0.4
0.3
0.4
0.2
0.2
VCE = 0.3V, TA = 25°C
Normalized to:
CTR at RBE = Open
0.1
0.0
0.0
0.01
0.1
1
10
100
10
RBE - BASE RESISTANCE (MΩ)
100
1000
RBE - BASE RESISTANCE (kΩ)
Fig. 9 CTR vs. RBE (Unsaturated)
1.0
0.9
0.8
IF = 10mA
NORMALIZED CTR
0.7
0.6
0.5
IF = 20mA
IF = 5mA
0.4
0.3
0.2
VCE = 5V, TA = 25°C
Normalized to:
CTR at RBE = Open
0.1
0.0
10
100
1000
RBE - BASE RESISTANCE (kΩ)
© 2002 Fairchild Semiconductor Corporation
Page 5 of 9
4/10/03
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
INPUT
RL
10%
OUTPUT
OUTPUT PULSE
90%
R BE
tr
t on
tf
t off
Adjust I F to produce IC = 2 mA
Figure 10. Switching Time Test Circuit and Waveforms
Package Dimensions (Surface Mount)
8-Pin Small Outline
0.024 (0.61)
SEATING PLANE
0.164 (4.16)
0.144 (3.66)
0.060 (1.52)
0.202 (5.13)
0.182 (4.63)
0.275 (6.99)
0.155 (3.94)
0.010 (0.25)
0.006 (0.16)
0.143 (3.63)
0.123 (3.13)
0.021 (0.53)
0.011 (0.28)
0.008 (0.20)
0.003 (0.08)
0.244 (6.19)
0.224 (5.69)
0.050 (1.27)
0.050 (1.27)
TYP
Lead Coplanarity : 0.004 (0.10) MAX
© 2002 Fairchild Semiconductor Corporation
Page 6 of 9
4/10/03
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
ORDERING INFORMATION
Option
Order
Entry
Identifier
Description
V
V
VDE 0084
R1
R1
Tape and reel (500 units per reel)
R1V
R1V
VDE 0884, Tape and reel (500 units per reel)
R2
R2
Tape and reel (2500 units per reel)
R2V
R2V
VDE 0884, Tape and reel (2500 units per reel)
MARKING INFORMATION
1
215
V
X YY S
3
4
2
6
5
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code, e.g., ‘3’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
© 2002 Fairchild Semiconductor Corporation
Page 7 of 9
4/10/03
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
Carrier Tape Specifications
8.0 ± 0.10
3.50 ± 0.20
2.0 ± 0.05
Ø1.5 MIN
4.0 ± 0.10
0.30 MAX
1.75 ± 0.10
5.5 ± 0.05
12.0 ± 0.3
8.3 ± 0.10
5.20 ± 0.20
6.40 ± 0.20
0.1 MAX
Ø1.5 ± 0.1/-0
User Direction of Feed
Reflow Profile
Temperature (°C)
300
230°C, 10–30 s
250
245°C peak
200
150
Time above 183°C, 120–180 sec
100
Ramp up = 2–10°C/sec
50
• Peak reflow temperature: 245°C (package surface temperature)
• Time of temperature higher than 183°C for 120–180 seconds
• One time soldering reflow is recommended
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
© 2002 Fairchild Semiconductor Corporation
Page 8 of 9
4/10/03
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
© 2002 Fairchild Semiconductor Corporation
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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