DALLAS DS2407

DS2407
DS2407
Dual Addressable Switch Plus
1K–Bit Memory
FEATURES
PIN ASSIGNMENT
• Open
drain PIO pins are controlled and their logic
level can be determined over 1–WireTM bus for
closed–loop control
TO–92
TSOC PACKAGE
1
2
3
DALLAS
DS2407
• Dual Channel operation (TSOC package)
• PIO pin channel A sink capability of 50 mA at 0.4V with
soft turn–on; channel B 8 mA at 0.4V
6
5
4
TOP VIEW
• Maximum operating voltage of 13V at PIO–A, 6.5V at
3.7 X 4.0 X 1.5 mm
PIO–B
• 1024 bits user–programmable OTP EPROM
• 7 bytes of user–programmable status memory to control the device
SIDE VIEW
• Multiple
DS2407s can be identified on a common
1–Wire bus and be turned on or off independently of
other devices on the bus
1
2
1
2
See Mech. Drawings
Section
3
• Unique, factory–lasered
and tested 64–bit registration number (8–bit family code + 48–bit serial number
+ 8–bit CRC tester) assures error–free selection and
absolute identity because no two parts are alike
• On–chip CRC16 generator allows detection of data
3
BOTTOM VIEW
See Mech. Drawings
Section
transfer errors
• Built–in
multidrop controller ensures compatibility
with other MicroLANTM products
• Reduces
control, address, data, programming and
power to a single data pin
• Directly connects to a single port pin of a microprocessor and communicates at up to 16.3k bits/s
• Low
cost TO–92 or 6–pin TSOC surface mount
package
PIN DESCRIPTION
Pin 1
Pin 2
Pin 3
Pin 4
Pin 5
Pin 6
TO–92
Ground
Data
PIO–A
––––
––––
––––
TSOC
Ground
Data
PIO–A
VCC
NC
PIO–B
• 1–Wire communication operates over a wide voltage
range of 2.8V to 6.0V from –40°C to +85°C
PIO–A
PIO–B
• Supports
Conditional Search with user–programmable condition
• VCC bondout for optional external supply to the device
(TSOC package only)
• Hidden Mode; the device will respond only to a Match
DATA
1–WIRE
PROTOCOL
ROM command or a Conditional Search when in this
mode.
012099 1/31
DS2407
ORDERING INFORMATION
DS2407
DS2407P
DS2407T
DS2407V
DS2407X
TO–92 package
6–pin TSOC package
Tape & Reel version of DS2407
Tape & Reel version of DS2407P
Chip Scale Pkg., Tape & Reel
ADDRESSABLE SWITCHTM DESCRIPTION
The DS2407 Dual Addressable Switch Plus Memory is
a pair of open drain N–channel transistors that can be
turned on or off via the 1–Wire bus. Alternatively, either
open drain output can serve as a logic input that can be
monitored via the same 1–Wire bus. In addition, the
device has 1024 bits of EPROM to store relevant
information such as switch function, physical location,
etc. The device is addressed by matching its individual
64–bit factory–lasered registration number. The 64–bit
number consists of an 8–bit family code, a unique 48–bit
serial number, and an 8–bit cyclic redundancy check.
Communication with the DS2407 follows the standard
Dallas Semiconductor 1–Wire protocol and can be
accomplished with a single port pin of a microcontroller.
Multiple DS2407 devices can reside on a common
1–Wire bus creating a MicroLAN. The network controller circuitry is embedded within the chip including a
search algorithm to determine the identity of each
DS2407 on the network. The open drain outputs (PIO
pins) for each DS2407 on the MicroLAN can be independently switched on or off whether there is one or
many devices sharing the same 1–Wire bus. The logic
level of the PIO pins for each device on the MicroLAN
can also be individually sensed and reported to the bus
master. The device also supports a Conditional Search
command to identify and access devices that qualify for
certain user–specified conditions. Qualification may be
the status of a PIO–pin, the state of the output transistor
or a latched activity flag.
OVERVIEW
The DS2407 Dual Addressable Switch Plus Memory
provides a means for assigning an electronically readable identification to a particular node or location with
additional control capability provided by two open–drain
012099 2/31
N–channel MOSFETs that can be remotely switched
and sensed via communication over the 1–Wire bus
(Figure 1). The DS2407 contains a factory–lasered registration number that includes a unique 48–bit serial
number, an 8–bit CRC, and an 8–bit family code (12h).
The 64–bit ROM portion of the DS2407 not only creates
an absolutely unique electronic identification for the
device itself but also is a means to locate and obtain or
change the state of the switches that are associated
with the 64–bit ROM.
The device derives its power entirely from the 1–Wire
bus by storing energy on an internal capacitor during
periods of time when the signal line is high and continues to operate off of this “parasite” power source during
the low times of the 1–Wire line until it returns high to
replenish the parasite (capacitor) supply. For applications in feeder–networks where the low–times of the
1–Wire line may be very long, the VCC pin may be connected to an external voltage supply to operate the
device.
The DS2407 uses the standard Dallas Semiconductor
1–Wire protocol for data transfers (Figure 2), with all
data being read and written least significant bit first.
Communication to and from the DS2407 requires a
single bi–directional line that is typically a port pin of a
microcontroller. The 1–Wire bus master (microcontroller) must first issue one of five ROM function commands: 1) Read ROM, 2) Match ROM, 3) Search ROM,
4) Skip ROM, or 5) Conditional Search ROM. These
commands operate on the 64–bit lasered ROM portion
of each device and can singulate a specific device if
many are present on the 1–Wire line as well as indicate
to the bus master how many and what type of each
device is present. After a ROM function command is
successfully executed, the open–drain outputs can be
switched or sensed, or the contents of the memory can
be read or written via the 1–Wire bus. Writing the 1024
bits of data memory or writing to the EPROM sections of
the status memory requires a 12V programming pulse.
When programming the DS2407, only EPROM–based
devices are allowed to be present on the 1–Wire line.
DS2407
64–BIT LASERED ROM
MEMORY
Each DS2407 contains a unique ROM code that is 64
bits long. The first eight bits are a 1–Wire family code.
The next 48 bits are a unique serial number. The last
eight bits are a CRC of the first 56 bits. (See Figure 3.)
The 1–Wire CRC of the lasered ROM is generated using
the polynomial X8 + X5 + X4 + 1. Additional information
about the Dallas Semiconductor 1–Wire Cyclic Redundancy Check is available in the Book of DS19xx
iButton Standards. The 64–bit ROM and ROM Function
Control section allow the DS2407 to operate as a
1–Wire device and follow the 1–Wire protocol detailed in
the section “1–Wire Bus System”. The functions
required to read and write the data and status memory
of the DS2407 and to access the switches are not
accessible until the ROM function protocol has been
satisfied. This protocol is described in the ROM functions flow chart (Figure 12). The 1–Wire bus master
must first provide one of the five ROM function commands. After a ROM function sequence has been successfully executed, the bus master may then provide
any one of the memory function commands specific to
the DS2407 (Figure 6).
The DS2407 contains two memory sections, Data
Memory and Status Memory. The data memory consists
of 1024 bits of one–time programmable EPROM organized as 4 pages of 32 bytes each. The size of the
device’s status memory is 8 bytes. The first seven bytes
of status memory (addresses 0 to 6) are also realized as
EPROM. The eighth byte (address 7) consists of SRAM
cells which shadow the contents of address 6 each time
the device powers up. The complete memory map is
shown in Figure 4. The 8–bit scratchpad is an additional
register that acts as a buffer when writing the memory.
Data is first written to the scratchpad and then verified
by reading a 16–bit CRC from the DS2407 that confirms
proper receipt of the data and address. If the buffer contents are correct, a programming pulse should be
applied and the byte of data will be written into the
selected address in memory. This process insures data
integrity when programming the memory. The details for
reading and programming the EPROM portions of the
DS2407 are given in the Memory Function Commands
section.
012099 3/31
DS2407
DS2407 BLOCK DIAGRAM Figure 1
PARASITE POWER
INT VDD
VDD
1–WIRE BUS
DATA
PROGRAM
VOLTAGE
DETECT
1–WIRE FUNCTION
CONTROL
MEMORY
FUNCTION
CONTROL
16–BIT CRC
GENERATOR
DATA MEMORY
1024–BIT EPROM
(4 PAGES OF 32 BYTES)
STATUS MEMORY
7 BYTES EPROM
1 BYTE SRAM
PIO–A
PIO–B
012099 4/31
PIO
CONTROL
64–BIT LASERED
ROM
8–BIT
SCRATCHPAD
DS2407
HIERARCHICAL STRUCTURE FOR 1–WIRE PROTOCOL Figure 2
BUS
MASTER
1–WIRE BUS
OTHER
DEVICES
DS2407
COMMAND
LEVEL:
1–WIRE ROM FUNCTION
COMMANDS (SEE FIGURE 12)
DS2407 SPECIFIC
MEMORY FUNCTION
COMMANDS
(SEE FIGURE 6)
AVAILABLE
COMMANDS:
DATA FIELD
AFFECTED:
READ ROM
MATCH ROM
SEARCH ROM
SKIP ROM
64–BIT ROM
64–BIT ROM
64–BIT ROM
N/A
CONDITIONAL
SEARCH ROM
64–BIT ROM,
CONDITIONAL SEARCH
SETTINGS AT STATUS
MEMORY LOCATION 7,
DEVICE/CHANNEL STATUS
WRITE MEMORY
1024–BIT EPROM
WRITE STATUS
STATUS MEMORY
READ MEMORY
1024–BIT EPROM
READ STATUS
STATUS MEMORY
EXT. READ MEMORY
1024–BIT EPROM
CHANNEL ACCESS
PIO CHANNELS
64–BIT LASERED ROM Figure 3
8–Bit CRC Code
MSB
LSB
48–Bit Serial Number
MSB
LSB
8–Bit Family Code (12H)
MSB
LSB
012099 5/31
DS2407
DS2407 MEMORY MAP Figure 4
8–BIT
SCRATCHPAD
STARTING
ADDRESS
0000H
32–BYTE FINAL STORAGE EPROM
PAGE 0
32–BYTE FINAL STORAGE EPROM
PAGE 1
32–BYTE FINAL STORAGE EPROM
PAGE 2
32–BYTE FINAL STORAGE EPROM
PAGE 3
0020H
1K BIT
EPROM
0040H
0060H
8 BYTES
POWER–ON
FACTORY REDIRECITON BIT MAP OF WRITE–PROTECT BITS
VALID DEVICE
STATUS
BYTE
BYTES
USED PAGES
DATA MEMORY
SETTINGS (SRAM) DEFAULT SETTINGS
MEMORY
DS2407 STATUS MEMORY MAP Figure 5
ADDRESS
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
0 (EPROM)
BM 3
BM 2
BM 1
BM 0
WP 3
WP 2
WP 1
WP 0
1 (EPROM)
1
1
1
1
1
1
Redir. 0
Redir. 0
2 (EPROM)
1
1
1
1
1
1
Redir. 1
Redir. 1
3 (EPROM)
1
1
1
1
1
1
Redir. 2
Redir. 2
4 (EPROM)
1
1
1
1
1
1
Redir. 3
Redir. 3
5 (EPROM)
EPROM factory byte
6 (EPROM
X
Pwr–On
Status
PIO–B
Pwr–On
Status
PIO–A
Pwr–On
Status
CSS4
Pwr–On
Status
CSS3
Pwr–On
Status
CSS2
Pwr–On
Status
CSS1
Pwr–On
Status
CSS0
7 (SRAM)
Supply
Indication
(read
only)
PIO–B
Channel
Flip–Flop
PIO–A
Channel
Flip–Flop
CSS4
Channel
Select
CSS3
Channel
Select
CSS2
Source
Select
CSS1
Source
Select
CSS0
Polarity
012099 6/31
DS2407
STATUS MEMORY
The Status Memory can be read or written to indicate
various conditions to the software interrogating the
DS2407. These conditions include special features for
the data memory, definition of the power–on default and
actual settings for the Conditional Search as well as the
channel flip–flops and the external power supply indication. How these functions are assigned to the bits of the
Status Memory is detailed in Figure 5. The channel flip–
flops and power supply indication are also included in
the Channel Info Byte of the Channel Access command
protocol (see Figure 6).
The first four bits of the Status Memory (address 0, bits 0
to 3) contain the Write Protect Page bits which inhibit
programming of the corresponding page in the 1024–bit
data memory area if the appropriate write protection bit
is programmed. Once a bit has been programmed in the
Write Protect Page section of the Status Memory, the
entire 32 byte page that corresponds to that bit can no
longer be altered but may still be read. The remaining 4
bits of Status Memory location 0 are reserved for use by
the iButton operating software TMEX. Their purpose is
to indicate which memory pages are already in use.
Originally, all of these bits are unprogrammed, indicating that the device does not contain any data. As soon
as data is written to any page of the device under control
of TMEX, the bit inside this bitmap corresponding to that
page will be programmed to 0, marking this page as
used. These bits are application flags only and have no
impact on the internal logic of the DS2407.
The next four bytes of the Status Memory (addresses 1
to 4) contain the Page Address Redirection Bytes which
indicate if one or more of the pages of data in the
1024–bits EPROM memory section have been invalidated by software and redirected to the page address
contained in the appropriate redirection byte. The hardware of the DS2407 makes no decisions based on the
contents of the Page Address Redirection Bytes. Since
with EPROM technology bits can only be changed from
a logical 1 to a logical 0 by programming, it is not possible to simply rewrite a page if the data requires changing or updating. But with space permitting, an entire
page of data can be redirected to another page within
the DS2407. Under TMEX, a page is redirected by writing the one’s complement of the new page address into
the Page Address Redirection Byte that corresponds to
the original (replaced) page. This architecture allows
the user’s software to make a “data patch” to the
EPROM by indicating that a particular page or pages
should be replaced with those indicated in the Page
Address Redirection Bytes.
Under TMEX, if a Page Address Redirection Byte has a
FFh value, the data in the main memory that corresponds to that page is valid. If a Page Address Redirection Byte has some other hex value than FFh, the data in
the page corresponding to that redirection byte is
invalid. According to the TMEX definitions, the valid
data will now be found at the one’s complement of the
page address indicated by the hex value stored in the
associated Page Address Redirection Byte. A value of
FDh in the redirection byte for page 1, for example,
would indicate that the updated data is now in page 2.
Since the data memory consists of four pages only, the 6
most significant bits of the redirection bytes cannot be
programmed to zeros.
Status Memory location 5 is programmed to 00h at the
factory. Status Memory location 6 contains the power–on default settings for the Conditional Search Select
(CSS0 to CSS4, bits 0 to 4) and the PIO channels. The
power–on settings become valid as they are internally
transferred by the device into Status Memory location 7
after the device has powered up and the bus master
sends a ROM Function Command byte for the first time.
The codes for the Conditional Search Settings are
detailed with the description of the Conditional Search
command later in this data sheet. If both CSS1 and
CSS2 in Status Memory Location 7 are set to zero, the
DS2407 will enter a “Hidden Mode” where it will keep its
status but only responds to Match ROM and Conditional
Search. To respond to Conditional Search the polarity
(CSS0) needs to be 1. The “Hidden Mode” can be ended
either by a power–on reset or by matching the device’s
registration number and setting CSS1 or CSS2 to 1.
012099 7/31
DS2407
The output transistors of both channels are controlled
by their channel flip–flops. These flip–flops are accessible through bit locations 5 and 6 of Status Memory
address 7 as well as through the Channel Access command. Setting a channel flip–flop to 0 will make the
associated PIO–transistor conducting or on, setting the
flip–flop to 1 will switch the transistor off. When powering
up, the output transistors of both channels are non–conducting or off. They may change their status as the
user–programmed power–on status is transferred into
Status Memory location 7. Bit 7 of Status Memory Location 7 indicates if the DS2407 is connected to an external power supply. Without external supply this read–
only bit will be 0. If the voltage applied to the VCC pin is
high enough to keep the device powered up, this bit will
be 1.
The Status Memory is programmed similarly to the data
memory. Details for reading and programming the status memory portion of the DS2407 are given in the
Memory Function Commands section.
MEMORY FUNCTION COMMANDS
The “Memory Function Flow Chart” (Figure 6) describes
the protocols necessary for accessing the various data
fields and PIO channels within the DS2407. The
Memory Function Control section, 8–bit scratchpad,
and the Program Voltage Detect circuit combine to interpret the commands issued by the bus master and create
the correct control signals within the device. A three–
byte protocol is issued by the bus master. It is comprised
of a command byte to determine the type of operation
and two address bytes to determine the specific starting
byte location within a data field or to supply and
exchange setup and status data when accessing the
PIO channels. The command byte indicates if the
device is to be read or written or if the PIO channels are
to be accessed. Writing data involves not only issuing
the correct command sequence but also providing a
12–volt programming voltage at the appropriate times.
To execute a write sequence, a byte of data is first
loaded into the scratchpad and then programmed into
the selected address. Write sequences always occur a
byte at a time. To execute a read sequence, the starting
address is issued by the bus master and data is read
012099 8/31
from the part beginning at that initial location and continuing to the end of the selected data field or until a reset
sequence is issued. All bits transferred to the DS2407
and received back by the bus master are sent least significant bit first.
READ MEMORY [F0h]
The Read Memory command is used to read data from
the 1024–bit EPROM data memory field. The bus master follows the command byte with a two–byte address
(TA1=(T7:T0), TA2=(T15:T8)) that indicates a starting
byte location within the data field. Since the data
memory contains 128 bytes, T15:T8 and T7 should all
be zero. With every subsequent read data time slot the
bus master receives data from the DS2407 starting at
the initial address and continuing until the end of the
1024–bits data field is reached or until a Reset Pulse is
issued. If reading occurs through the end of memory
space, the bus master may issue sixteen additional read
time slots and the DS2407 will respond with a 16–bit
CRC of the command, address bytes and all data bytes
read from the initial starting byte through the last byte of
memory. This CRC is the result of clearing the CRC generator and then shifting in the command byte followed
by the two address bytes and the data bytes beginning
at the first addressed memory location and continuing
through to the last byte of the EPROM data memory.
After the CRC is received by the bus master, any subsequent read time slots will appear as logical 1s until a
Reset Pulse is issued. Any reads ended by a Reset
Pulse prior to reaching the end of memory will not have
the 16–bit CRC available.
Typically the software controlling the device should
store a 16–bit CRC with each page of data to insure
rapid, error–free data transfers that eliminate having to
read a page multiple times to determine if the received
data is correct or not. (See Book of DS19xx iButton
Standards, Chapter 7 for the recommended file structure to be used with the 1–Wire environment). If CRC
values are imbedded within the data it is unnecessary to
read the end–of–memory CRC. The Read Memory
command can be ended at any point by issuing a Reset
Pulse.
DS2407
EXTENDED READ MEMORY [A5h]
The Extended Read Memory command supports page
redirection when reading data from the 1024–bit
EPROM data field. One major difference between the
Extended Read Memory and the basic Read Memory
command is that the bus master receives the Redirection Byte (see description of Status Memory) first before
investing time in reading data from the addressed
memory location. This allows the bus master to quickly
decide whether to continue and access the data at the
selected starting page or to terminate and restart the
reading process at the redirected page address.
In addition to page redirection, the Extended Read
Memory command also supports “bit–oriented” applications where the user cannot store a 16–bit CRC with the
data itself. With bit–oriented applications the EPROM
information may change over time within a page boundary making it impossible to include an accompanying
CRC that will always be valid. Therefore, the Extended
Read Memory command concludes each page with the
DS2407 generating and supplying a 16–bit CRC that is
based on and therefore always consistent with the current data stored in each page of the 1024–bit EPROM
data field.
After having sent the command code of the Extended
Read Memory command, the bus master sends a two–
byte address (TA1=(T7:T0), TA2=(T15:T8)) that indicates a starting byte location within the data field. By
sending eight read data time slots, the master receives
the Redirection Byte associated with the page given by
the starting address. With the next sixteen read data
time slots, the bus master receives a 16–bit CRC of the
command byte, address bytes and the Redirection
Byte. This CRC is computed by the DS2407 and read
back by the bus master to check if the command word,
starting address and Redirection Byte were received
correctly.
If the CRC read by the bus master is incorrect, a Reset
Pulse must be issued and the entire sequence must be
repeated. If the CRC received by the bus master is correct, the bus master issues read time slots and receives
data from the DS2407 starting at the initial address and
continuing until the end of a 32–byte page is reached. At
that point the bus master will send sixteen additional
read time slots and receive a 16–bit CRC that is the
result of shifting into the CRC generator all of the data
bytes from the initial starting byte to the last byte of the
current page.
With the next 24 read data time slots the master will
receive the Redirection Byte of the next page followed
by a 16–bit CRC of the Redirection Byte. After this, data
is again read from the 1024–bits EPROM data field
starting at the beginning of the new page. This
sequence will continue until the final page and its
accompanying CRC are read by the bus master.
The Extended Read Memory command provides a
16–bit CRC at two locations within the transaction flow
chart: 1) after the Redirection Byte and 2) at the end of
each memory page. The CRC at the end of the memory
page is always the result of clearing the CRC generator
and shifting in the data bytes beginning at the first
addressed memory location of the EPROM data page
until the last byte of this page. With the initial pass
through the Extended Read Memory flow chart the
16–bit CRC value after the Redirection Byte is the result
of shifting the command byte into the cleared CRC generator, followed by the two address bytes and the
Redirection Byte. Subsequent passes through the
Extended Read Memory flow chart will generate a
16–bit CRC that is the result of clearing the CRC generator and then shifting in the Redirection Byte only. After
the 16–bit CRC of the last page is read, the bus master
will receive logical 1s from the DS2407 until a Reset
Pulse is issued. The Extended Read Memory command
sequence can be ended at any point by issuing a Reset
Pulse.
WRITING EPROM MEMORY
The DS2407 has two independent EPROM memory
fields, Data Memory and Status Memory. The function
flow for writing either field is almost identical. After the
appropriate write command has been issued, the bus
master will send a two–byte starting address
(TA1=(T7:T0), TA2=(T15:T8)) and a byte of data
(D7:D0). A 16–bit CRC of the command byte, address
bytes, and data byte is computed by the DS2407 and
read back by the bus master to confirm that the correct
command word, starting address, and data byte were
received.
012099 9/31
DS2407
If the CRC read by the bus master is incorrect, a Reset
Pulse must be issued and the entire sequence must be
repeated. If the CRC received by the bus master is correct, a programming pulse (12 volts on the 1–Wire bus
for 480 µs) is issued by the bus master. Prior to programming, the entire unprogrammed EPROM memory field
will appear as logical 1s. For each bit in the data byte
provided by the bus master that is set to a logical 0, the
corresponding bit in the selected byte of the EPROM
memory is programmed to a logical 0 after the programming pulse has been applied.
After the 480 µs programming pulse is applied and the
data line returns to the idle level (5 volts), the bus master
issues eight read time slots to verify that the appropriate
bits have been programmed. The DS2407 responds
with the data from the selected EPROM address sent
least significant bit first. This byte contains the bitwise
logical AND of all data ever written to this address. If the
EPROM byte contains 1s in bit positions where the byte
issued by the master contained 0s, a Reset Pulse
should be issued and the current byte address should
be programmed again. If the DS2407 EPROM byte contains 0s in the same bit positions as the data byte, the
programming was successful and the DS2407 will automatically increment its address counter to select the
next byte in the EPROM memory field. The new two–
byte address will also be loaded into the 16–bit CRC
generator as a starting value. The bus master will issue
the next byte of data using eight write time slots.
As the DS2407 receives this byte of data into the
scratchpad, it also shifts the data into the CRC generator that has been preloaded with the current address
and the result is a 16–bit CRC of the new data byte and
the new address. After supplying the data byte, the bus
master will read this 16–bit CRC from the DS2407 with
012099 10/31
sixteen read time slots to confirm that the address
incremented properly and the data byte was received
correctly. If the CRC is incorrect, a Reset Pulse must be
issued and the write sequence must be restarted. If the
CRC is correct, the bus master will issue a programming
pulse and the selected byte in memory will be programmed.
Note that the initial pass through the write flow chart will
generate an 16–bit CRC value that is the result of shifting the command byte into the CRC generator, followed
by the two address bytes, and finally the data byte. Subsequent passes through the write flow chart due to the
DS2407 automatically incrementing its address counter
will generate a 16–bit CRC that is the result of loading
(not shifting) the new (incremented) address into the
CRC generator and then shifting in the new data byte.
For both of these cases, the decision to continue (to
apply a program pulse to the DS2407) is made entirely
by the bus master, since the DS2407 will not be able to
determine if the 16–bit CRC calculated by the bus master agrees with the 16–bit CRC calculated by the
DS2407. If an incorrect CRC is ignored and a program
pulse is applied by the bus master, incorrect programming could occur within the DS2407. Also note that the
DS2407 will always increment its internal address
counter after the receipt of the eight read time slots used
to confirm the programming of the selected EPROM
byte. The decision to continue is again made entirely by
the bus master. Therefore if the EPROM data byte does
not match the supplied data byte but the master continues with the write command, incorrect programming
could occur within the DS2407. The write command
sequence can be ended at any point by issuing a Reset
Pulse.
DS2407
MEMORY FUNCTION FLOW CHART Figure 6
MASTER TX MEMORY
FUNCTION COMMAND
F0h
READ
MEMORY
?
A5h
EXTENDED
READ MEMORY
?
Y
N
Y
TO FIGURE 6
SECOND PART
N
BUS MASTER TX
TA1 (T7:T0)
BUS MASTER TX
TA1 (T7:T0)
BUS MASTER TX
TA2 (T15:T8)
BUS MASTER TX
TA2 (T15:T8)
DS2407 SETS MEMORY
ADDRESS = (T15:T0)
DS2407 SETS MEMORY
ADDRESS = (T15:T0)
BUS MASTER RX
REDIR. BYTE
BUS MASTER RX
DATA FROM
DATA MEMORY
BUS MASTER
TX RESET
?
DS2407 INCREMENTS
ADDRESS COUNTER
N
N
END
OF DATA
MEMORY
?
BUS MASTER RX CRC16 OF COMMAND,
ADDRESS, REDIR. BYTE
(1ST PASS)
CRC16 OF REDIR. BYTE (SUBSEQUENT
PASSES)
Y
BUS MASTER
TX RESET
N
CRC
CORRECT
?
Y
BUS MASTER RX
DATA FROM
DATA MEMORY
Y
BUS MASTER
TX RESET
?
Y
Y
N
BUS MASTER
TX RESET
?
N
END OF
PAGE
?
BUS MASTER RX
CRC16 OF COMMAND,
ADDRESS, DATA
DS2407 INCREMENTS
ADDRESS COUNTER
N
Y
BUS MASTER RX CRC16
OF PRECEDING PAGE OF DATA
BUS MASTER
TX RESET
?
Y
BUS MASTER
TX RESET
N
CRC
CORRECT
?
N
DS2407 INCREMENTS
ADDRESS COUNTER
Y
BUS MASTER
RX 1’S
END OF
DATA
MEMORY
?
LEGEND:
Y
Y
DECISION MADE
BY THE MASTER
N
Y
BUS MASTER
TX RESET
?
N
DECISION MADE
BY DS2407
DS2407 TX
PRESENCE PULSE
BUS MASTER
RX 1’S
012099 11/31
DS2407
MEMORY FUNCTION FLOW CHART Figure 6 (cont’d)
FROM FIGURE 6
FIRST PART
0Fh
WRITE
MEMORY
?
TO FIGURE 6
SECOND PART
55h
WRITE
STATUS
?
N
N
Y
Y
BUS MASTER TX
TA1 (T7:T0)
BUS MASTER TX
TA1 (T7:T0)
LEGEND:
BUS MASTER TX
TA2 (T15:T8)
BUS MASTER TX
TA2 (T15:T8)
DECISION MADE
BY THE MASTER
BUS MASTER TX
DATA BYTE (D7:D0)
BUS MASTER RX CRC16
OF COMMAND, ADDRESS,
DATA (1ST PASS)
CRC16 OF ADDRESS, DATA
(SUBSEQUENT PASSES)
BUS MASTER RX CRC16
OF COMMAND, ADDRESS,
DATA (1ST PASS)
CRC16 OF ADDRESS, DATA
(SUBSEQUENT PASSES)
CRC
CORRECT
?
BUS MASTER TX
DATA BYTE (D7:D0)
DECISION MADE
BY DS2407
N
N
CRC
CORRECT
?
Y
Y
BUS MASTER TX
PROGRAM PULSE
N
DS2407 COPIES
SCRATCHPAD
TO DATA EPROM
BUS MASTER TX
8 READ TIME SLOTS
OR PROGRAM PULSE
ADDRESS
<7
?
Y
BUS MASTER TX
PROGRAM PULSE
BUS MASTER RX
BYTE FROM EPROM
EPROM BYTE
CORRECT
?
DS2407 COPIES
SCRATCHPAD TO
VOLATILE STATUS
N
DS2407 COPIES
SCRATCHPAD
TO STATUS EPROM
BUS MASTER RX BYTE
FROM VOLATILE
STATUS
BUS MASTER RX
BYTE FROM EPROM
Y
END OF
DATA MEMORY
?
N
Y
Y
N
DS2407 INCREMENTS
ADDRESS COUNTER
DS2407 LOADS NEW
ADDRESS INTO CRC
GENERATOR
012099 12/31
EPROM BYTE
CORRECT
?
BUS MASTER
TX RESET
DS2407 TX
PRESENCE PULSE
DS2407 INCREMENTS
ADDRESS COUNTER
DS2407 LOADS NEW
ADDRESS INTO CRC
GENERATOR
DS2407
MEMORY FUNCTION FLOW CHART Figure 6 (cont’d)
FROM FIGURE 6
SECOND PART
AAh
READ STATUS
?
F5h
CHANNEL
ACCESS
?
Y
N
Y
N
BUS MASTER TX
TA1 (T7:T0)
BUS MASTER TX
CONTROL BYTE 1
BUS MASTER TX
TA2 (T15:T8)
BUS MASTER TX
CONTROL BYTE 2
BUS MASTER
TX RESET
DS2407 TX
PRESENCE PULSE
BUS MASTER RX
CHANNEL INFO BYTE
DS2506 SETS STATUS ADDRESS
= (T15:T0)
Y
BUS MASTER RX DATA
FROM
STATUS MEMORY
BUS MASTER
TX RESET
?
N
BUS MASTER
TX RESET
?
DS2506 INCREMENTS
ADDRESS COUNTER
N
Y
WRITE
N
BUS MASTER TX DATA
TO CHANNEL F/F
READ
*
MODE
?
*
BUS MASTER RX
DATA FROM PIOs
END OF
STATUS MEMORY
?
*SEE CHANNEL CONTROL BYTE 1
AND FIGURE 7A.
Y
Y
BUS MASTER
TX RESET
?
BUS MASTER
TX RESET
?
Y
N
N
CRC
ENABLED
?
BUS MASTER RX CRC16
OF COMMAND,
ADDRESS, DATA
BUS MASTER
TX RESET
?
*
*
N
Y
CRC
DUE
?
Y
N
*
DS2407 INCR. CRC
BYTE COUNTER
Y
Y
N
BUS MASTER
RX 1’S
BUS MASTER
TX RESET
?
N
BUS MASTER RX CRC16 OF
COMMAND, CONTROL, DATA
(1ST PASS)
CRC16 OF DATA
(SUBSEQUENT PASSES)
Y
BUS MASTER
TX RESET
?
N
DS2407 CLEARS
CRC BYTE COUNTER
R/W TOGGLING
ENABLED
?
N
*
Y
DS2407 TX
PRESENCE PULSE
DS2407 TOGGLES
READ/WRITE MODE
012099 13/31
DS2407
WRITE MEMORY [0Fh]
The Write Memory command is used to program the
1024–bit EPROM data field. The details of the functional
flow chart are described in the section “WRITING
EPROM MEMORY”. The data memory address range
is 0000h to 007Fh. If the bus master sends a starting
address higher than this, the nine most significant
address bits are set to zeros by the internal circuitry of
the chip. This will result in a mismatch between the CRC
calculated by the DS2407 and the CRC calculated by
the bus master, indicating an error condition.
WRITE STATUS [55h]
The Write Status command is used to program the Status Memory field, which includes specification of power–on default settings of the Conditional Search and the
channel flip–flops as well as dynamic changes of the
Conditional Search Settings and channel flip–flops. The
details of the functional flow chart are described in the
section “WRITING EPROM MEMORY”.
The Status Memory address range is 0000h to 0007h.
The general programming algorithm is valid for the
EPROM section of the Status Memory (addresses 0 to
6) only. Status Memory Address 7 consists of SRAM
cells rather than EPROM. As a consequence, writing to
this location does not require a 12V programming pulse
and the bits 0 to 6 can be reprogrammed to any value
without limitation. Bit 7 is read–only; attempts to write to
it are ignored. The function flow for writing to status
memory location 7 is basically the same as for the
EPROM Status Memory Bytes. However, the programming pulse may be, but need not be, replaced by sending 8 Read Data Time Slots.
READ STATUS [AAh]
The Channel Control bytes allow the master to select a
PIO–channel to communicate with, to specify communication parameters and to reset the activity latches.
Figure 7 shows the details. The bits CHS0 and CHS1
(Channel Control Byte 1) select the channels to communicate with. One can select one of the two channels or
both channels together.
The codes for CHS0 and CHS1 are as follows:
CHS1
0
0
1
1
CHS0
0
1
0
1
(not allowed)
channel A only
channel B only
both channels interleaved
When reading a single channel only, the logic level at the
selected PIO is sampled at the beginning of each read
time slot (Figure 9a) and immediately signaled through
the 1–Wire line. Because the PIO logic levels are
sensed at the beginning of the time slot, transitions at
the PIO during the time slot are not seen by the bus master. When writing to a single channel, the selected PIO
will show the new status after (but not necessarily
immediately after) the 1–Wire line has returned to its idle
level of typically 5V (see Figure 9a). If the bus master
transmits a 1 (Write One Time Slot), the output transistor
of the selected channel will change its status after time
td1, which is 15 µs to 60 µs after the begin of the time
slot. If the bus master transmits a 0 (Write Zero Time
Slot), the output transistor will change its status with a
delay of td0 after the 1–Wire line has returned to its idle
level. The value of td0 may vary between 200 and 300
ns (see Figure 9a). Depending on the load conditions,
there may be additional delay until the voltage at the PIO
reaches a new logical level.
The Read Status command is used to read data from
the Status Memory field. The functional flow chart of this
command is identical to the Read Memory command.
Since the Status Memory is only 8 bytes, the DS2407
will send the 16–bit CRC after the last byte of status
information has been transmitted.
If one is communicating with both channels, the Interleave Control Bit IC controls when data is sampled and
when data arrives at the PIO pins. There is an asynchronous mode (IC = 0) and a synchronous mode (IC = 1).
For the asynchronous mode, both channels are
accessed in an alternating way. For the synchronous
mode, both channels are accessed simultaneously.
CHANNEL ACCESS [F5h]
When reading in the asynchronous mode each channel
is sampled alternately at the start of each Read Time
Slot, beginning with channel A. The logic level detected
at the PIO is immediately transmitted to the master during the same time slot. When reading in the synchronous mode, both channels will be sampled at the same
time; the data bit from channel A will be sent to the mas-
The Channel Access command is used to access the
PIO channels to sense the logical status of the output
node and the output transistor and to change the status
of the output transistor. The bus master will follow the
command byte with two Channel Control Bytes and will
receive back the Channel Info byte.
012099 14/31
DS2407
ter immediately during the same time slot while the data
bit from channel B follows with the next time slot which
does not sample the PIOs. Both channels will be
sampled again with the time slot that follows the transmission of the data bit from PIO–B (Figure 9b).
When writing in the asynchronous mode, each channel
will change its status independently of the other. The
change of status occurs with the same timing relations
as for communication with one channel. However, every
second write time slot addresses the same channel.
The first time slot is directed to channel A, the second to
channel B, the next to channel A and so on. As a consequence, in asynchronous mode both PIOs can never
change their status at the same time. When writing in
the synchronous mode, both channels operate
together. After the new values for both channels have
arrived at the DS2407 the change of status at both channels occurs with the same timing relations as for communication with one channel. As with the asynchronous
mode, every second write time slot contains data for the
same channel. The first time slot addresses channel A,
the second channel B and so on. Depending on the data
values, in the synchronous mode both PIOs can change
their status at the same time (Figure 9c). In any of these
cases, the information of channel A and channel B will
appear alternating on the 1–Wire line, always starting
with channel A. By varying the idle–time between time
slots on the 1–Wire line one has full control over the time
points of sampling and the waveforms generated at the
PIO–pins when writing to the device.
The TOG bit of Channel Control Byte 1 specifies if one is
always reading or writing (TOG = 0) or if one is going to
change from reading to writing or vice versa after every
data byte that has been sent to or received from the
DS2407 (TOG = 1). When accessing one channel, one
byte is equivalent to eight reads from or writes to the
selected PIO pin. When accessing two channels, one
byte is equivalent to four reads or writes from/to each
channel.
The initial mode (reading or writing) for accessing the
PIO channels is specified in the IM bit. For reading, IM
has to be set to 1, for writing IM needs to be 0. If the TOG
bit is set to 0, the device will always read or write as specified by the IM bit. If TOG is 1, the device will use the
setting of IM for the first byte to be transmitted and will
alternate between reading and writing after every byte.
Figure 7c illustrates the effect of TOG and IM for one–
channel as well as for two–channel operation.
Bit 7 of the Channel Control Byte 1 allows resetting of
the activity latch of each channel. The activity latch is set
with the first negative or positive edge detected on its
associated PIO channel. Both activity latches are
cleared simultaneously if bit 7 of the Channel Control
Byte 1 is 1. The activity latches are not changed if this bit
is 0.
Channel Control Byte 1 also controls the internal CRC
generator to safeguard data transmission between the
bus master and the DS2407 for channel access. It does
not affect reading from or writing to the memory sections
of the DS2407. The CRC control bits (bit 0 and bit 1) can
be set to create and protect data packets that have the
size of 8 bytes or 32 bytes. If desired, the device can
safeguard even single bytes by a 16–bit CRC. This setting, however, is recommended only if the data is limited
to one byte since it would reduce the sampling rate to
one third of the maximum possible value.
The CRC control codes are as follows:
CRC1
0
0
1
CRC0
0
1
0
1
1
CRC disabled (no CRC at all)
CRC after every byte
CRC after 8 bytes
(status page size)
CRC after 32 bytes
(data page size)
The CRC provides a high level of data safeguarding and
is more efficient for verification than “read after write”. A
detailed description of CRCs is found in the “Book of
DS19xx iButton Standards”. If the CRC is disabled, the
CRC–related sections in the flow chart are skipped.
Channel Control Byte 2 is reserved for future development. The bus master should always send an FFh for
the second Channel Control Byte.
The Channel Info byte (Figure 8) which the bus master
receives after the Channel Control bytes have been
transmitted indicates the status of the channel flip–
flops, the PIO pins, the activity latches as well as the
availability of channel B and external power supply.
Reading 0 for both the channel flip–flop and the sensed
level indicates that the output transistor of the PIO is
pulling the node low. To be able to read from a PIO channel, the output transistor needs to be non–conducting,
which is equivalent to a 1 for the channel flip–flop. Sampling the level of PIO A and B is done at the same time
(synchronous) for the Channel Info Byte. If channel B is
012099 15/31
DS2407
available, bit 6 of the Channel Info Byte reads 1. For
1–channel versions of the DS2407, the PIO B sensed
level, channel flip–flop value, and activity latch value
should be ignored. Without an external supply, the sup-
ply indication bit (bit 7) reads 0. As long as the voltage
applied to the VCC pin is high enough to operate the
device this bit will read 1.
CHANNEL CONTROL BYTE 1 Figure 7a
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
Activity
latch reset
IM
TOG
IC
CHS1
CHS0
CRC1
CRC0
CHANNEL CONTROL BYTE 2 Figure 7b
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
1
1
1
1
1
1
1
1
THE EFFECT OF TOGGLE MODE AND INITIAL MODE Figure 7c
TOG
IM
CHANNELS
0
0
one channel
Write all bits to the selected channel.
EFFECT
0
1
one channel
Read all bits from the selected channel.
1
0
one channel
Write eight bits, read eight bits, write, read, etc. to/
from the selected channel.
1
1
one channel
Read eight bits, write eight bits, read, write, etc.
from/to the selected channel.
0
0
two channels
Repeat: four times (write A, write b)
0
1
two channels
Repeat: four times (read A, read B)
1
0
two channels
Four times: (write A, write B), four times: (read A,
read B), write, read, etc.
1
1
two channels
Four times: (read A, read B), four times: (write A,
write B), read, write, etc.
CHANNEL INFO BYTE Figure 8
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
Supply
Indication
0=no supply
Number of
Channels
0=channel A
only
PIO–B
Activity
Latch
PIO–A
Activity
Latch
PIO–B
Sensed
Level
PIO–A
Sensed
Level
PIO–B
Channel
Flip–Flop Q
PIO–A
Channel
Flip–Flop Q
012099 16/31
DS2407
ONE–CHANNEL READ/WRITE Figure 9A
READ
PIO SAMPLING
PIO
1–WIRE
WRITE
td1
15 µs < td1 < 60 µs
200 ns < td0 < 300 ns
td0
1–WIRE
PIO
TWO–CHANNEL READ Figure 9B
PIO SAMPLING
1
2
3
4
5
6
7
8
9
PIO–A
PIO–B
SYNCHRONOUS MODE
1–WIRE
A1
B1
A3
B3
A5
A3
B4
A5
B5
A7
B7
A9
ASYNCHRONOUS MODE
1–WIRE
A1
B2
B6
A7
B8
A9
012099 17/31
DS2407
TWO–CHANNEL WRITE Figure 9C
td1
1–WIRE
15 µs < td1 < 60 µs
A1
B1
200 ns < td0 < 300 ns
A2
B2
A3
B3
A4
B4
SYNCHRONOUS MODE
PIO–A
A1
A2
A3
A4
PIO–B
B1
B2
B3
B4
ASYNCHRONOUS MODE
PIO–A
A1
PIO–B
A2
B1
1–WIRE BUS SYSTEM
The 1–Wire bus is a system which has a single bus master and one or more slaves. In all instances, the DS2407
is a slave device. The bus master is typically a microcontroller. The discussion of this bus system is broken
down into three topics: hardware configuration, transaction sequence, and 1–Wire signaling (signal type and
timing). A 1–Wire protocol defines bus transactions in
terms of the bus state during specified time slots that are
initiated on the falling edge of sync pulses from the bus
master. For a more detailed protocol description, please
refer to Chapter 4 of the Book of DS19xx iButton Standards.
HARDWARE CONFIGURATION
The 1–Wire bus has only a single line by definition; it is
important that each device on the bus be able to drive it
at the appropriate time. To facilitate this, each device
attached to the 1–Wire bus must have an open drain
connection or 3–state outputs. The DS2407 is an open
drain part with an internal circuit equivalent to that
shown in Figure 10. The bus master can be the same
equivalent circuit. If a bidirectional pin is not available,
separate output and input pins can be tied together.
The bus master requires a pull–up resistor at the master
end of the bus, with the bus master circuit equivalent to
the one shown in Figures 11a and 11b. The value of the
pull–up resistor should be approximately 5kΩ for short
line lengths. The interface between bus master and
1–Wire bus may be reduced to a single pull–up resistor
012099 18/31
A3
B2
A4
B3
B4
(open drain master) or two resistors plus transistor
(TTL–type master) if the EPROM section of the DS2407
is already programmed before the final installation.
A multidrop bus consists of a 1–Wire bus with multiple
slaves attached. The 1–Wire bus has a maximum data
rate of 16.3k bits per second. If the bus master is also
required to perform programming of the EPROM portions of the DS2407, a programming supply capable of
delivering up to 10 milliamps at 12 volts for 480 µs is
required. Non–EPROM devices cannot be present during programming. The idle state for the 1–Wire bus is
high. If, for any reason, a transaction needs to be suspended, the bus MUST be left in the idle state if the
transaction is to resume. If this does not occur and the
bus is left low for more than 120 µs, one or more of the
devices on the bus may be reset. If the 1–Wire bus
remains low for more than 5 ms and the DS2407 is not
powered externally it may lose its current status and
switch off both PIOs.
TRANSACTION SEQUENCE
The sequence for accessing the DS2407 via the 1–Wire
port is as follows:
• Initialization
• ROM Function Command
• Memory Function Command
• Read Memory/Write Memory or Channel Access
DS2407
INITIALIZATION
Skip ROM [CCh]
All transactions on the 1–Wire bus begin with an initialization sequence. The initialization sequence consists
of a reset pulse transmitted by the bus master followed
by a presence pulse(s) transmitted by the slave(s).
The presence pulse lets the bus master know that the
DS2407 is on the bus and is ready to operate. For more
details, see the “1–Wire Signaling” section.
This command can save time in a single drop bus system by allowing the bus master to access the memory
functions without providing the 64–bit ROM code. If
more than one slave is present on the bus and a read
command is issued following the Skip ROM command,
data collision will occur on the bus as multiple slaves
transmit simultaneously (open drain pull–downs will
produce a wired–AND result).
ROM FUNCTION COMMANDS
Search ROM [F0h]
Once the bus master has detected a presence, it can
issue one of the five ROM function commands. All ROM
function commands are eight bits long. A list of these
commands follows (refer to flowchart in Figure 12):
Read ROM [33h]
This command allows the bus master to read the
DS2407’s 8–bit family code, unique 48–bit serial number, and 8–bit CRC. This command can be used only if
there is a single DS2407 on the bus. If more than one
slave is present on the bus, a data collision will occur
when all slaves try to transmit at the same time (open
drain will produce a wired–AND result).
Match ROM [55h]
The match ROM command, followed by a 64–bit ROM
sequence, allows the bus master to address a specific
DS2407 on a multidrop bus. Only the DS2407 that
exactly matches the 64–bit ROM sequence will respond
to the subsequent memory function command. All
slaves that do not match the 64–bit ROM sequence will
wait for a reset pulse. This command can be used with a
single or multiple devices on the bus.
When a system is initially interrogated, the bus master
may not know the number of devices on the 1–Wire bus
or their 64–bit ROM codes. The Search ROM command
allows the bus master to use a process of elimination to
identify the 64–bit ROM codes of all slave devices on the
bus. This process of elimination involves repeated
application of a simple three–step procedure where the
bus master starts by reading a bit position in the 64–bit
ROM, followed by reading the complement of that bit
position, and finally writing to all the devices still
involved in the search the desired logic value for that bit
position. A detailed example and a flowchart for the
search algorithm can be found in the “Book of DS19xx
iButton Standards.”
After one complete pass, the bus master knows the contents of the 64–bit ROM in one device. Subsequent
passes will reveal the total number of devices and their
individual ROM codes. In addition, after each complete
pass of the search that successfully determines the
64–bit ROM for a specific device on the multidrop bus,
that particular device can be individually accessed as if
a Match ROM had been issued since all other devices
will have dropped out of the search process and are
waiting for a reset pulse.
012099 19/31
DS2407
DS2407 EQUIVALENT CIRCUIT Figure 10
1–WIRE INTERFACE
PIO CHANNEL
ACTIVITY
LATCH
DATA
RX
Q
TO PIO
CONTROL
5 µA
Typ.
TX
“1”
EDGE
DETECTOR
D
PIO
Q
10MΩ
Typ.
RESET
100Ω
MOSFET
1–WIRE DATA
D
FROM PIO
CONTROL
GROUND
Q
R
Q
GROUND
CHANNEL
FLIP–FLOP
BUS MASTER CIRCUIT Figure 11
12V
A) Open Drain
VDD
VPUP
BUS MASTER
10kΩ
DS5000 OR 8051 EQUIVALENT
10kΩ
5kΩ
S
D
Open Drain
Port Pin
S
RX
VP0300L
OR
VP0106N3
OR
BSS110
D
TO DATA CONNECTION
OF DS2506
2N7000
D
TX
D
PGM
2N7000
470 pF
S
CAPACITOR ADDED TO REDUCE
COUPLING ON DATA LINE DUE TO
PROGRAMMING SIGNAL SWITCHING
S
2N7000
The interface is reduced to the 5kΩ pull–up resistor if one does not intend to program the EPROM cells.
B) Standard TTL
VDD
BUS MASTER
VPUP
5kΩ
12V
(10 mA min.)
PROGRAMMING PULSE
TTL–Equivalent
Port Pins
TO DATA CONNECTION
OF DS2507
RX
TX
5kΩ
The diode and Programming Pulse circuit are not required if one does not intend to program the EPROM cells.
012099 20/31
DS2407
ROM FUNCTIONS FLOW CHART Figure 12
MASTER TX
RESET PULSE
DS2407 TX
PRESENCE PULSE
MASTER TX ROM
FUNCTION COMMAND
33h
READ ROM
COMMAND
N
55h
MATCH ROM
COMMAND
F0h
SEARCH ROM
COMMAND
N
Y
Y
Y
N
ECh
CONDITIONAL
SEARCH
N
Y
CCh
SKIP ROM
COMMAND
N
Y
N
CONDITION
FULFILLED
?
Y
DS2407 TX BIT 0
DS2407 TX
FAMILY CODE
1 BYTE
MASTER TX BIT 0
BIT 0
MATCH?
N
DS2407 TX BIT 0
DS2407 TX BIT 0
MASTER TX BIT 0
MASTER TX BIT 0
N
BIT 0
MATCH?
Y
Y
DS2407 TX BIT 1
DS2407 TX
SERIAL NUMBER
6 BYTES
MASTER TX BIT 1
N
BIT 1
MATCH?
N
N
N
Y
DS2407 TX BIT 1
DS2407 TX BIT 1
DS2407 TX BIT 1
MASTER TX BIT 1
BIT 1
MATCH?
BIT 1
MATCH?
N
Y
DS2407 TX BIT 63
DS2407 TX BIT 63
DS2407 TX BIT 63
MASTER TX BIT 63
MASTER TX BIT 63
BIT 63
MATCH?
Y
Y
(SEE FIGURE 6)
N
MASTER TX BIT 1
DS2407 TX BIT 63
MASTER TX BIT 63
BIT 63
MATCH?
BIT 0
MATCH?
Y
Y
DS2407 TX
CRC BYTE
DS2407 TX BIT 0
BIT 63
MATCH?
N
Y
MASTER TX MEMORY
FUNCTION COMMAND
012099 21/31
DS2407
Conditional Search ROM [ECh]
The Conditional Search ROM command operates similarly to the Search ROM command except that only
devices fulfilling the specified condition will participate in
the search. The condition is specified by the bit functions CSS0 to CSS4 in Status Memory location 7. The
power–on default settings of these bits are stored in
EPROM in Status Memory location 6. If this EPROM
byte is not programmed, all CSS bits will be 1s. The
Conditional Search ROM provides an efficient means
for the bus master to determine devices in a multidrop
system that have to signal a status change, e.g. the
opening of a window in a building control application.
After each pass of the Conditional Search that successfully determined the 64–bit ROM for a specific device on
the multidrop bus, that particular device can be individually accessed as if a Match ROM had been issued since
all other devices will have dropped out of the search process and are waiting for a reset pulse.
For the conditional search, one can specify the polarity
(HIGH or LOW; CSS0), the source (PIO–pin, channel
flip flop or activity latch; CSS1, CSS2) and the channel
of interest (A, B or the logical OR of A, B; CSS3, CSS4).
Figure 13 shows a table of all qualifying conditions and
the required settings for CSS0 to CSS4.
The activity latch (Figure 10) captures an event for
interrogation by the bus master at a later time. In this
way, the bus master needs not to poll devices continuously. The activity latch is cleared to 0 when the device
powers up and is set to 1 with the first negative or positive edge detected on the associated PIO channel. The
activity latch can also be cleared by writing a 1 into bit 7
of the Channel Control Byte 1. When using the activity
latch the output transistor of the selected channel
should be non–conducting. Otherwise signals applied
to the PIO pin will be shorted to ground by the low impedance of the output transistor.
The channel of interest is specified by the Channel
Select bits CSS3 and CSS4. The sampling of the source
within the selected channel will take place on completion of the Conditional Search command byte. The
Channel selection codes are as follows:
CSS4,
0
0
1
1
012099 22/31
CSS3
0
1
0
1
Channel Selection
neither channel selected
channel A only
channel B only
channel A OR channel B
If both CSS3 and CSS4 are 1, the logical values of the
selected signal source of both channels are ORed and
the result is compared to specified polarity. If, for example, the specified polarity is 0, the signal source of both
channels must be 0 to allow the device to respond to the
Conditional Search. If both CSS3 and CSS4 are 0 neither channel is selected. Under this condition the device
will always respond to the Conditional Search if the
polarity bit CSS0 is 0, disregarding the status of the
selected source. If neither channel is selected and
CSS0 = 1, the device will ignore the Conditional Search
but will respond to the regular Search ROM command.
The source selection for the Conditional Search is done
through the Source Select bits CSS1 and CSS2. The
codes for these bits are as follows:
CSS2,
0
0
1
1
CSS1
0
1
0
1
Source Selection
Hidden Mode
Activity Latch
channel flip flop
PIO Status
Setting both CSS1 and CSS2 to 0 will put the device into
a “Hidden Mode” where it keeps its status but only
responds to the Match ROM (always) and Conditional
Search command (only if the polarity bit CSS0 is set to
1). While in “Hidden Mode” the device will never give a
Presence Pulse. When powering up into the “Hidden
Mode”, i.e., when bits 1 and 2 of status byte 6 have been
programmed to 0, the device will give one Presence
Pulse for every power–up sequence. If the device is in
Hidden Mode and the polarity bit is set to 0, the device
will not participate in the Conditional Search. As long as
the device is not programmed to power–up into “Hidden
Mode” the “Hidden Mode” can always be ended by a
power–on reset. Otherwise the only way to get the
device out of “Hidden Mode” is by remembering and
matching its 64–bit registration number and setting
CSS1 or CSS2 to 1.
The Conditional Search Polarity is specified by CSS0. If
CSS0 is 0, the DS2407 will respond to a Conditional
Search command if the status of the selected source for
the specified channel is a logic 0. If CSS0 is set to 1, the
source level needs to be a logic 1.
For 1–channel versions of the DS2407 the channel B
input will always be a logic 0 level. CSS4 should not be
set to 1 therefore to avoid unwanted influence from
DS2407
channel B. The bus master can determine the availability of channel B from bit 6 of the Channel Info byte.
ROM function command byte, even an invalid one, and
can be modified by writing to the appropriate Status
Memory location. As long as the device remains powered up, the modified search conditions are available for
use at any time.
The power–on default settings for the conditional
search become valid after the device has received any
QUALIFYING CONDITIONS FOR CONDITIONAL SEARCH Figure 13
DESCRIPTION
CONDITIONAL SEARCH SELECT CODE
CHANNEL SELECT
CONDITION
CHANNEL
CSS4
CSS3
don’t care
SOURCE SELECT
POLARITY
CSS2
CSS1
CSS0
0
0
1
Hidden Mode
neither one
Unconditional
neither one
0
0
Activity Latch = 0
A
0
1
0
1
0
Activity Latch = 1
A
0
1
0
1
1
Channel FF = 0
(transistor on)
A
0
1
1
0
0
Channel FF = 1
(transistor off)
A
0
1
1
0
1
PIO Low
A
0
1
1
1
0
PIO High
A
0
1
1
1
1
Activity Latch = 0
B
1
0
0
1
0
Activity Latch = 1
B
1
0
0
1
1
Channel FF = 0
(transistor on)
B
1
0
1
0
0
Channel FF = 1
(transistor off)
B
1
0
1
0
1
PIO Low
B
1
0
1
1
0
PIO High
B
1
0
1
1
1
Activity Latch = 0
A or B
1
1
0
1
0
Activity Latch = 1
A or B
1
1
0
1
1
Channel FF = 0
(transistor on)
A or B
1
1
1
0
0
Channel FF = 1
(transistor off)
A or B
1
1
1
0
1
PIO Low
A or B
1
1
1
1
0
PIO High
A or B
1
1
1
1
1
at least one of these bits
needs to be 1
0
012099 23/31
DS2407
INITIALIZATION PROCEDURE “RESET AND PRESENCE PULSES” Figure 14
MASTER TX “RESET PULSE”
MASTER RX “PRESENCE PULSE”
tRSTH
VPULLUP
VPULLUP MIN
VIH MIN
VIL MAX
0V
tRSTL
tPDL
tR
tPDH
RESISTOR
480 µs < tRSTL < *
480 µs < tRSTH < (includes recovery time)
15 µs < tPDH < 60 µs
60 µs < tPDL < 240 µs
MASTER
DS2407
* In order not to mask interrupt signalling by other devices on the 1–Wire bus, tRSTL + tR should always be less than
960 µs. tRSTL should be limited to maximum 5 ms. Otherwise the DS2407 may perform a power–on reset cycle.
READ/WRITE TIMING DIAGRAM Figure 15
Write–one Time Slot
tSLOT
VPULLUP
VPULLUP MIN
VIH MIN
DS2407
SAMPLING WINDOW
VIL MAX
0V
tLOW1
15 µs
60 µs
RESISTOR
MASTER
DS2407
012099 24/31
60 µs < tSLOT < 120 µs
1 µs < tLOW1 < 15 µs
1 µs < tREC < tREC
DS2407
READ/WRITE TIMING DIAGRAM Figure 15 (cont’d)
Write–zero Time Slot
tREC
tSLOT
VPULLUP
VPULLUP MIN
VIH MIN
DS2407
SAMPLING WINDOW
VIL MAX
0V
15 µs
60 µs
tLOW0
60 µs < tLOW0 < tSLOT < 120 µs
1 µs < tREC < Read–data Time Slot
tSLOT
tREC
VPULLUP
VPULLUP MIN
VIH MIN
MASTER SAMPLING
WINDOW
VIL MAX
0V
tSU
tRELEASE
tLOWR
tRDV
RESISTOR
MASTER
DS2407
60 µs < tSLOT < 120 µs
1 µs < tLOWR < 15 µs
0 < tRELEASE < 45 µs
1 µs < tREC < tRDV = 15 µs
tSU < 1 µs
1–WIRE SIGNALING
The DS2407 requires strict protocols to insure data
integrity. The protocol consists of five types of signaling
on one line: Reset Sequence with Reset Pulse and
Presence Pulse, Write 0, Write 1, Read Data and Program Pulse. All these signals except presence pulse are
initiated by the bus master. The initialization sequence
required to begin any communication with the DS2407
is shown in Figure 14. A reset pulse followed by a presence pulse indicates the DS2407 is ready to accept a
ROM command. The bus master transmits (TX) a reset
pulse (tRSTL, minimum 480 µs). The bus master then
releases the line and goes into receive mode (RX). The
1–Wire bus is pulled to a high state via the pull–up resistor. After detecting the rising edge on the data pin, the
DS2407 waits (tPDH, 15–60 µs) and then transmits the
presence pulse (tPDL, 60–240 µs). If the device is programmed to power–up into the “Hidden Mode”, the
presence pulse will be observed only once during the
power–up phase. With every subsequent reset pulse no
presence pulse will be transmitted.
012099 25/31
DS2407
READ/WRITE TIME SLOTS
The definitions of write and read time slots are illustrated
in Figure 15. All time slots are initiated by the master
driving the data line low. The falling edge of the data line
synchronizes the DS2407 to the master by triggering a
delay circuit in the DS2407. During write time slots, the
delay circuit determines when the DS2407 will sample
the data line. For a read data time slot, if a “0” is to be
transmitted, the delay circuit determines how long the
DS2407 will hold the data line low overriding the 1 generated by the master. If the data bit is an “1”, the device
will leave the read data time slot unchanged.
PROGRAM PULSE
To copy data from the 8–bit scratchpad to the EPROM
Data or Status Memory, a program pulse of 12 volts is
applied to the data line after the bus master has confirmed that the CRC for the current byte is correct. During programming, the bus master controls the transition
from a state where the data line is idling high via the
pull–up resistor to a state where the data line is actively
driven to a programming voltage of 12 volts providing a
minimum of 10 mA of current to the DS2407. This programming voltage (Figure 16) should be applied for 480
µs, after which the bus master should return the data
line to an idle high state controlled by the pull–up resistor. Note that due to the high voltage programming
requirements for any 1–Wire EPROM device, it is not
possible to multi–drop non–EPROM based 1–Wire
devices (e.g. DS1990A, DS1992) with the DS2407 during programming. An internal diode within the non–
EPROM based 1–Wire devices will attempt to clamp the
data line at approximately 8 volts and could potentially
damage these DS199x devices.
CRC GENERATION
With the DS2407 there are two different types of CRCs
(Cyclic Redundancy Checks). One CRC is an 8–bit type
and is stored in the most significant byte of the 64–bit
ROM. The bus master can compute a CRC value from
012099 26/31
the first 56 bits of the 64–bit ROM and compare it to the
value stored within the DS2407 to determine if the ROM
data has been received error–free by the bus master.
The equivalent polynomial function of this CRC is:
X8 + X5 + X4 + 1. This 8–bit CRC is received in the true
(non–inverted) form when reading the ROM of the
DS2407. It is computed at the factory and lasered into
the ROM.
The other CRC is a 16–bit type, generated according to
the standardized CRC16–polynomial function X16 + X15
+ X2 + 1. This CRC is used for error detection when
reading Data Memory, Status Memory or when communicating with PIO channels. It is the same type of CRC
as is used with NVRAM based iButtons for error detection within the iButton Extended File Structure. In contrast to the 8–bit CRC, the 16–bit CRC is always
returned in the complemented (inverted) form. A CRC–
generator inside the DS2407 chip (Figure 17) will calculate a new 16–bit CRC at every situation shown in the
command flow chart of Figure 6.
The DS2407 provides this CRC–value to the bus master to validate the transfer of command, address, and
data to and from the bus master. When reading the data
memory of the DS2407 with the Read Memory command, the 16–bit CRC is only transmitted at the end of
the memory. This CRC is generated by clearing the
CRC generator, shifting in the command, low address,
high address and every data byte starting at the first
addressed memory location and continuing until the end
of the implemented data memory is reached.
When reading the Status Memory with the Read Status
command, the 16–bit CRC is transmitted at the end of
the 8 byte page of the Status Memory. The 16–bit CRC
will be generated by clearing the CRC generator, shifting in the command byte, low address, high address and
the data bytes beginning at the first addressed memory
location and continuing until the last byte of the EPROM
Status Memory is reached.
DS2407
When reading the data memory of the DS2407 with the
Extended Read Memory command, there are two situations where a 16–bit CRC is transmitted. One 16–bit
CRC follows each Redirection Byte, another 16–bit
CRC is received after the last byte of a memory data
page is read. The CRC at the end of the memory page is
always the result of clearing the CRC generator and
shifting in the data bytes beginning at the first addressed
memory location of the EPROM data page until the last
byte of this page. With the initial pass through the
Extended Read Memory flow chart the 16–bit CRC
value is the result of shifting the command byte into the
cleared CRC generator, followed by the two address
bytes and the Redirection Byte. Subsequent passes
through the Extended Read Memory flow chart will generate a 16–bit CRC that is the result of clearing the CRC
generator and then shifting in only the Redirection Byte.
When writing to the DS2407 (either data memory or Status Memory), the bus master receives a 16–bit CRC to
verify that the data transfer was correct before applying
the programming pulse. With the initial pass through the
Write Memory/Status flow chart the 16–bit CRC will be
generated by clearing the CRC–generator, shifting in
the command, low address, high address and the data
byte. Subsequent passes through the Write Memory/
Status flow chart due to the DS2407 automatically incrementing its address counter will generate a 16–bit CRC
that is the result of loading (not shifting) the new
(incremented) address into the CRC generator and then
shifting in the new data byte.
When communicating with a PIO channel using the
Channel Access command, one can select if and how
often a 16–bit CRC will be added to the data stream.
This CRC selection is specified in the Channel Control
byte 1 and may be different every time the Channel
Access command is issued by the bus master. Depending on the CRC selection, the device can generate a
CRC after every byte that follows the Channel Info byte,
after each block of eight bytes or after each block of 32
bytes. If the CRC is enabled, with the initial pass through
the Channel Access flow chart the 16–bit CRC will be
generated by clearing the CRC–generator, shifting in
the command, Channel Control Bytes 1 and 2, Channel
Info Byte and the specified amount of data bytes (1, 8 or
32). Subsequent passes through the Channel Access
flow chart will generate a 16–bit CRC that is the result of
clearing the CRC generator and then shifting in the new
data bytes. This algorithm is valid for all accesses to the
PIO channels, continuous reading or writing as well as
toggling between read and write.
The comparison of CRC values and decision to continue with an operation are determined entirely by the
bus master. There is no circuitry on the DS2407 that prevents a command sequence from proceeding if the CRC
stored in or calculated by the DS2407 does not match
the value generated by the bus master. For more details
on generating CRC values including example implementations in both hardware and software, see the
“Book of DS19xx iButton Standards”.
PROGRAM PULSE TIMING DIAGRAM Figure 16
VPP
VPULLUP
tRP
tFP
GND
NORMAL 1–Wire
COMMUNICATION ENDS
>5 µs
480 µs
>5 µs
tDP
tPP
tDV
NORMAL 1–Wire
COMMUNICATION RESUMES
LINE TYPE LEGEND:
Bus master active high
(12V @ 10 mA)
Resistor pull–up
012099 27/31
DS2407
CRC–16 HARDWARE DESCRIPTION AND POLYNOMIAL Figure 17
POLYNOMIAL = X16 + X15 + X2 + 1
1ST
STAGE
X0
2ND
STAGE
3RD
STAGE
X1
9TH
STAGE
X2
10TH
STAGE
X9
X3
11TH
STAGE
X10
4TH
STAGE
12TH
STAGE
X11
5TH
STAGE
X4
13TH
STAGE
X12
6TH
STAGE
X5
14TH
STAGE
X13
7TH
STAGE
X6
8TH
STAGE
X7
15TH
STAGE
X14
X8
16TH
STAGE
X15
X16
INPUT DATA
012099 28/31
CRC
OUTPUT
DS2407
ABSOLUTE MAXIMUM RATINGS*
Voltage on DATA or PIO–A to Ground
Voltage on VCC or PIO–B to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
–0.5V to +13.0V
–0.5V to +6.5V
–40°C to +85°C
–55°C to +125°C
260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS DATA PIN
PARAMETER
( VPUP=2.8V to 6.0V; –40°C to +85°C)
SYMBOL
MIN
Logic 1
VIH
2.2
Logic 0
VIL
–0.3
Output Logic Low @ 4 mA
VOL
Output Logic High
VOH
VPUP
Input Load Current
IL
5
Programming Voltage @ 10 mA
VPP
TYP
11.5
SYMBOL
MIN
Logic 1 (A)
VIHA
Logic 0 (A)
VILA
Output Sink Current @ 0.4V (A)
ISA
Output Logic High (A)
VOHA
Logic 1 (B)
VIHB
Logic 0 (B)
VILB
Output Sink Current @ 0.4V (B)
ISB
Output Logic High (B)
UNITS
NOTES
V
1, 6
+0.8
V
1, 13
0.4
V
1
6.0
V
1, 2
µA
3, 14
12.0
DC ELECTRICAL CHARACTERISTICS PIO PINS
PARAMETER
MAX
V
( VPUP=2.8V to 6.0V; –40°C to +85°C)
TYP
MAX
UNITS
NOTES
2.2
12
V
1, 6, 16
–0.3
+0.6
V
1
See graph on page 31
VPUPA
11, 12, 15
12.0
V
1, 2
2.2
6
V
1, 6, 16
–0.3
+0.4
V
1
See graph on page 31
VPUPB
6.0
V
1, 2
7
10
13
MΩ
9
SYMBOL
MIN
TYP
Logic 1
VIHC
Logic 0
VILC
Input Current
ICC
Input Resistance
VOHB
RI
DC ELECTRICAL CHARACTERISTICS VCC
PARAMETER
(VPUP=2.8V to 6.0V; –40°C to +85°C )
MAX
UNITS
NOTES
2.8
6
V
1, 10
–0.3
+0.8
V
1
4.0
µA
3
012099 29/31
DS2407
CAPACITANCE
PARAMETER
(tA=25°C)
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
800
pF
7
Capacitance DATA Pin
CD
Capacitance PIO–A Pin
CA
100
pF
Capacitance PIO–B Pin
CB
25
pF
Capacitance VCC Pin
CC
10
pF
AC ELECTRICAL CHARACTERISTICS
PARAMETER
( VPUP=2.8V to 6.0V; –40°C to +85°C)
SYMBOL
MIN
Time Slot
tSLOT
Write 1 Low Time
MAX
UNITS
60
120
µs
tLOW1
1
15
µs
Write 0 Low Time
tLOW0
60
120
µs
Read Data Valid
tRDV
Release Time
tRELEASE
TYP
µs
exactly 15
0
15
NOTES
45
µs
1
µs
Read Data Setup DATA
tSU
Recovery Time
tREC
1
µs
Reset Time High
tRSTH
480
µs
4
Reset Time Low
tRSTL
480
5000
µs
8
Presence Detect High
tPDHIGH
15
60
µs
Presence Detect Low
tPDLOW
60
240
µs
Read Data Setup PIO–A
tSUA
500
ns
Read Data Setup PIO–B
tSUB
500
ns
Delay to Program
tDP
5
µs
Delay to Verify
tDV
5
µs
Program Pulse Width
tPP
480
Program Voltage Rise Time
tRP
0.5
5.0
µs
Program Voltage Fall Time
tFP
0.5
5.0
µs
µs
DEFINITION OF PIO READ DATA SETUP TIME
PIO–A,
PIO–B
1–WIRE
tSUA,
tSUB
012099 30/31
5
DS2407
PIO SINK CURRENT
ISA, ISB
@ 0.4V
100 mA
90 mA
80 mA
70 mA
60 mA
50 mA
40 mA
30 mA
20 mA
10 mA
ÍÍÍÍÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍÍÍÍÍ
2.8V
NOTES:
4V
5V
6V
MAX.
PIO–A
MIN.
MAX.
PIO–B
MIN.
VPUP
1.
2.
3.
4.
5.
All voltages are referenced to ground.
VPUP, VPUPA, VPUPB = external pull–up voltage.
Input load is to ground.
An additional reset or communication sequence cannot begin until the reset high time has expired.
Read data setup time refers to the time the host must pull the 1–Wire bus low to read a bit. Data is guaranteed
to be valid within 1 µs of this falling edge and will remain valid for 14 µs minimum (15 µs total from falling edge
on 1–Wire bus).
6. VIH is a function of the chip–internal supply voltage. This voltage is determined by either the external pull–up resistor and VPUP or the VCC supply, whichever is higher.
7. Capacitance on the data pin could be 800 pF when power is first applied. If a 5kΩ resistor is used to pull up the
data line to VPUP, 5 µs after power has been applied the parasite capacitance will not affect normal communications.
8. tRSTL should be limited to maximum 5 ms. Otherwise the DS2407 may perform a power–on reset.
9. Input resistance is to ground.
10. VCC must be at least 4.0V if it is to be connected during a programming pulse.
11. If the current at PIO–A reaches 200 mA the gate voltage of the output transistor will be reduced to limit the sink
current to 200 mA. The user–supplied circuitry should limit the current flow through the PIO–transistor to no more
than 100 mA. Otherwise the DS2407 may be damaged.
12. PIO–A has a controlled turn–on output. The indicated currents are DC values. At VPUP = 4.0V or higher the sink
current typically reaches 80% of its DC value 1 µs after turning on the transistor.
13. Under certain low voltage conditions VILMAX may have to be reduced to as much as 0.5V to always guarantee
a presence pulse.
14. The input load current may be as high as 100 µA after a power–on reset until a memory function command byte
has been sent as well as during the execution of a ROM function command.
15. If the device is disconnected from the 1–Wire bus (data pin floating) channel A may lose its output status even
if VCC is connected. A resistor of approximately 100 kΩ between VCC and data will maintain the status of
channel A.
16. Without VCC supply, VIH for either PIO pin should always be greater than or equal to VPUP –0.3V.
012099 31/31