ELECTRONICS INDUSTRY (USA) CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com BR5000W - BR5010W SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 50 Amperes BR50W 0.732 (18.6) 0.692 (17.5) FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength 1.130 (28.7) 1.120 (28.4) 0.470 (11.9) 0.430 (10.9) 0.21 (5.3) 0.20 (5.1) MECHANICAL DATA : 0.042 (1.06) 0.038 (0.96) * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency * Weight : 15.95 grams 1.2 (30.5) MIN. 0.310 (7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL BR 5000W BR 5001W BR 5002W BR 5004W BR 5006W BR 5008W BR 5010W UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc=55°C IF(AV) 50 Amps. IFSM 400 Amps. Current Squared Time at t < 8.3 ms. 2 It 664 AS Maximum Forward Voltage per Diode at IF = 25 Amps. VF 1.1 Volts IR 10 µA IR(H) 200 µA RθJC 1.0 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance at Junction to Case ( Note 1 ) Operating Junction Temperature Range Storage Temperature Range 2 Notes : 1 ) Thermal resistance from Junction to Case with units mounted on heat sink. UPDATE : APRIL 21, 1998 ELECTRONICS INDUSTRY (USA) CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( BR5000W - BR5010W ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 60 600 5 0 50 5 0 5 0 5 0 5 0 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES RECTIFIED CURRENT 5 0 40 30 20 10 0 500 T J = 50 °C 400 300 200 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 100 0 0 25 50 75 100 125 150 175 1 2 CASE TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 6 10 20 40 60 PER DIODE REVERSE CURRENT, MICROAMPERES PER DIODE 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 T J = 25 °C 0.1 10 T J = 100 °C 1.0 T J = 25 °C 0.1 0.01 0 20 40 60 80 100 120 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 FORWARD CURRENT, AMPERES 4 NUMBER OF CYCLES AT 60Hz 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, VOLTS 1.6 1.8 140