ETC TLP521-2GB

TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4
TLP521XGB, TLP521-2XGB, TLP521-4XGB
TLP521X, TLP521-2X, TLP521-4X
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
TLP521
FEATURES
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Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Current Transfer Ratio ( 50% min)
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
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High BVCEO ( 55Vmin )
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All electrical parameters 100% tested
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Custom electrical selections available
4
3
1.2
5.08
4.08
BSI approved - Certificate No. 8001
DESCRIPTION
The TLP521, TLP521-2, TLP521-4 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
1
2
7.0
6.0
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : - STD
- G form
- SMD approved to CECC 00802
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Dimensions in mm
2.54
7.62
4.0
3.0
13°
Max
0.5
3.0
TLP521-2
0.5
0.26
3.35
2.54
7.0
6.0
1
8
2
3
7
1.2
10.16
9.16
7.62
4.0
3.0
13°
Max
0.5
3.0
0.26
3.35
0.5
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
1
TLP521-4
3
4
2.54
OPTION G
7.62
SURFACE MOUNT
1.2
20.32
19.32
0.6
0.1
10.46
9.86
1.25
0.75
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/4/03
13
5
12
6
11
7
8
10
9
7.62
4.0
3.0
13°
Max
0.5
0.26
10.16
16
15
14
2
7.0
6.0
OPTION SM
6
5
4
0.5 3.35
0.26
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail [email protected]
http://www.isocom.com
DB92546m-AAS/A3
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
55V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Input
PARAMETER
MIN TYP MAX UNITS
Forward Voltage (VF)
1.0
1.15
Reverse Current (IR)
Output
Coupled
Collector-emitter Breakdown (BVCEO)
55
( Note 2 )
Emitter-collector Breakdown (BVECO)
6
Collector-emitter Dark Current (ICEO)
Current Transfer Ratio (CTR) (Note 2)
TLP521, TLP521-2, TLP521-4
CTR selection available
BL
GB
GB
Input-output Isolation Resistance RISO
Response Time (Rise), tr
Response Time (Fall), tf
Note 1
Note 2
7/4/03
V
IF = 10mA
10
µA
VR = 4V
V
IC = 0.5mA
V
nA
IE = 100µA
VCE = 20V
%
%
%
%
5mA IF , 5V VCE
V
V
8mA IF , 2.4mA IC
1mA IF , 0.2mA IC
VRMS
VPK
Ω
µs
µs
See note 1
See note 1
VIO = 500V (note 1)
VCE = 2V ,
IC = 2mA, RL = 100Ω
600
600
600
Collector-emitter Saturation VoltageVCE (SAT)
-GB
Input to Output Isolation Voltage VISO
1.3
100
50
200
100
30
0.4
0.4
5300
7500
5x1010
4
3
TEST CONDITION
1mA IF , 0.4V VCE
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB92546m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Low
Collector-emitter Voltage
TA = 25°C
25
Collector current IC (mA)
Collector power dissipation PC (mW)
200
150
100
50
0
15
50
40
30
20
10
10
5
20
5
IF = 2mA
0
-30
0
25
50
75
100
0
125
Ambient temperature TA ( °C )
0.2
50
50
1.0
TA = 25°C
30
Collector current IC (mA)
50
Forward current IF (mA)
0.8
Collector Current vs. Collector-emitter Voltage
60
40
30
20
10
0
20
40
15
30
10
20
10
IF = 5mA
0
-30
0
25
50
75
100
125
0
Ambient temperature TA ( °C )
2
4
6
8
10
Collector-emitter voltage VCE ( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Current Transfer Ratio vs. Forward Current
320
0.28
0.24
Current transfer ratio CTR (%)
Collector-emitter saturation voltage VCE(SAT) (V)
0.6
Collector-emitter voltage VCE ( V )
Forward Current vs. Ambient Temperature
IF = 5mA
IC = 1mA
0.20
0.16
0.12
0.08
0.04
280
240
200
160
120
80
VCE = 5V
TA = 25°C
40
0
0
-30
0
25
50
75
Ambient temperature TA ( °C )
7/4/03
0.4
100
1
2
5
10
20
50
Forward current IF (mA)
DB92546m-AAS/A3