ISP817X, ISP817 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS z z APPROVALS UL recognised, File No. E91231 under Package System 'EE' 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 DESCRIPTION The ISP817 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Current Transfer Ratio (50% min) z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z High BVCEO ( 80Vmin ) z All electrical parameters 100% tested z Custom electrical selections available APPLICATIONS z Computer terminals z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances OPTION SM SURFACE MOUNT 0.6 0.1 10.46 9.86 1.25 0.75 ISP817X ISP817 2.54 Dimensions in mm 1 2 7.0 6.0 4 3 1.2 5.08 4.08 7.62 4.0 3.0 0.5 3.0 0.5 3.35 0.26 13° Max OPTION G 7.62 0.26 10.16 ISOCOMCOMPONENTSLTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 16/2/11 DB92275 ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature -55°C to +125°C Operating Temperature -30°C to +100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current Power Dissipation 80V 6V 50mA 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) 80 Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) Input to Output Isolation Voltage VISO 50 100 200 80 130 200 300 V IF = 20mA 10 μA VR = 4V 100 V V nA IC = 1mA IE = 100μA VCE = 20V 600 600 600 160 260 400 600 0.2 % % % % % % % V 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 20mA IF , 1mA IC VRMS 5300 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr 4 Output Fall Time tf 3 16/2/11 1.4 Current Transfer Ratio (CTR) (Note 2) GB BL A B C D Collector-emitter Saturation VoltageVCE (SAT) Note 1 Note 2 TEST CONDITION 7500 PK See note 1 See note 1 18 18 Ω μs μs VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100Ω Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92275 150 100 50 0 -30 0 25 50 75 100 125 6 5 3 2 1 0 0 5 15 Collector Current vs. Collector-emitter Voltage 60 50mA 50 TA = 25°C 30mA Collector current IC (mA) 50 Forward current IF (mA) 10 Forward current IF (mA) Forward Current vs. Ambient Temperature 40 30 20 10 0 20mA 40 15mA 30 10mA 20 10 IF = 5mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( °C ) 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature Current Transfer Ratio vs. Forward Current 320 0.14 0.12 Current transfer ratio CTR (%) Collector-emitter saturation voltage VCE(SAT) (V) TA = 25°C 4 Ambient temperature TA ( °C ) IF = 20mA IC = 1mA 0.10 0.08 0.06 0.04 0.02 280 240 200 160 120 80 VCE = 5V TA = 25°C 40 0 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 16/2/11 15mA =1mA 3mA 5mA 10mA Collector-emitter Saturation Voltage vs. Forward Current Ic Collector power dissipation PC (mW) 200 Collector-emitter saturation voltage VCE(SAT) (V) Collector Power Dissipation vs. Ambient Temperature 100 1 2 5 10 20 Forward current IF (mA) DB92275 50