LT1126/LT1127 Dual/Quad Decompensated Low Noise, High Speed Precision Op Amps U DESCRIPTIO FEATURES ■ 100% Tested Low Voltage Noise ■ Slew Rate Gain-Bandwidth Product Offset Voltage, Prime Grade Low Grade High Voltage Gain Supply Current Per Amplifier Common Mode Rejection Power Supply Rejection Available in 8-Pin SO Package ■ ■ ■ ■ ■ ■ UO APPLICATI ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ S Two and Three Op Amp Instrumentation Amplifiers Low Noise Signal Processing Active Filters Microvolt Accuracy Threshold Detection Strain Gauge Amplifiers Direct Coupled Audio Gain Stages Tape Head Preamplifiers Microphone Preamplifiers Accelerometer Amplifiers Infrared Detectors The LT1126 dual and LT1127 quad are high performance, decompensated op amps that offer higher slew rate and bandwidth than the LT1124 dual and the LT1125 quad operational amplifiers. The enhanced AC performance is available without degrading DC specs of the LT1124/ LT1125. Both LT1126/LT1127 are stable in a gain of 10 or more. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire distribution of several key parameters. Slew rate, gain-bandwidth, and 1kHz noise are 100% tested for each individual amplifier. Consequently, the specifications of even the lowest cost grades (the LT1126C and the LT1127C) have been enhanced. Power consumption of the dual LT1126 is less than one half of two OP-37s. Low power and high performance in an 8-pin SO package makes the LT1126 a first choice for surface mounted systems and where board space is restricted. Protected by U.S. patents 4,775,884 and 4,837,496. Low Noise, Wide Bandwidth Instrumentation Amplifier – INPUT Voltage Noise vs Frequency + 620 Ω 1/4 LT1127 – 10k 100 6.2k 200 Ω – – 1/4 LT1127 + INPUT 1/4 LT1127 6.2k 620Ω OUTPUT + + 10k GAIN = 1000, BANDWIDTH = 480kHz INPUT REFERRED NOISE = 4.5nV/ √ Hz AT 1kHz, 6µVRMS OVER BANDWIDTH RMS VOLTAGE NOISE DENSITY (nV/√Hz) ■ 2.7nV/√Hz Typ 4.2nV/√Hz Max 11V/µs Typ 65MHz Typ 70µV Max 100µV Max 5 Million Min 3.1mA Max 112dB Min 116dB Min V S = ±15V TA = 25°C 30 10 MAXIMUM 3 1/f CORNER 2.3Hz 1 0.1 1.0 10 TYPICAL 100 1000 FREQUENCY (Hz) LT1126 • TA01 LT1126 • TA07 1 LT1126/LT1127 W W W AXI U U ABSOLUTE RATI GS Supply Voltage ..................................................... ±22V Input Voltage ............................ Equal to Supply Voltage Output Short Circuit Duration .......................... Indefinite Differential Input Current (Note 5) ......................± 25mA Lead Temperature (Soldering, 10 sec.)................. 300°C Operating Temperature Range LT1126AM/LT1126M LT1127AM/LT1127M ........................ –55°C to 125°C LT1126AC/LT1126C LT1127AC/LT1127C ............................ –40°C to 85°C Storage Temperature Range All Grades ......................................... –65°C to 150°C W U U PACKAGE/ORDER I FOR ATIO TOP VIEW +IN A 1 V– 2 +IN B 3 –IN B A B 4 8 –IN A 7 OUT A 6 V+ 5 ORDER PART NUMBER LT1126CS8 OUT B S8 PART MARKING S8 PACKAGE 8-LEAD PLASTIC SOIC NOTE: THIS PIN CONFIGURATION DIFFERS FROM THE 8-PIN DIP CONFIGURATION. INSTEAD, IT FOLLOWS THE INDUSTRY STANDARD LT1013DS8 SO PACKAGE PIN LOCATIONS ORDER PART NUMBER TOP VIEW OUT A 1 –IN A 2 +IN A 3 V– 4 8 V+ 7 OUT B 6 –IN B 5 +IN B LT1126AMJ8 LT1126MJ8 LT1126CJ8 LT1126ACN8 LT1126CN8 A B J8 PACKAGE 8-LEAD CERAMIC DIP N8 PACKAGE 8-LEAD PLASTIC DIP LT1126 • POI02 1126 LT1126 • POI01 TOP VIEW TOP VIEW OUT A 1 16 OUT D –IN A 2 15 –IN D +IN A 3 14 +IN D V+ 4 13 V – +IN B 5 12 +IN C –IN B 6 OUT B 7 10 OUT C NC 8 9 A B LT1127CS D C 11 –IN C OUT A 1 –IN A 2 +IN A 3 V+ 4 +IN B 5 –IN B 6 OUT B 7 LT1127AMJ LT1127MJ LT1127CJ LT1127ACN LT1127CN 14 OUT D 13 –IN D A D 12 +IN D 11 V – 10 +IN C B C 9 –IN C 8 OUT C NC J PACKAGE N PACKAGE 14-LEAD CERAMIC DIP 14-LEAD PLASTIC DIP S PACKAGE 16-LEAD PLASTIC SOL LT1126 • POI04 LT1126 • POI03 ELECTRICAL CHARACTERISTICS VS = ±15V, TA = 25°C, unless otherwise noted. LT1126AM/AC LT1127AM/AC MIN TYP MAX SYMBOL PARAMETER CONDITIONS (Note 1) VOS Input Offset Voltage LT1126 LT1127 ∆VOS ∆Time IOS Long Term Input Offset Voltage Stability Input Offset Current 20 25 0.3 LT1126 LT1127 IB en Input Bias Current Input Noise Voltage 5 6 ±7 70 2 0.1Hz to 10Hz (Notes 7 and 8) 70 90 15 20 ± 20 200 LT1126M/C LT1127M/C MIN TYP MAX UNITS 25 30 0.3 µV µV µV/Mo 6 7 ±8 70 100 140 20 30 ± 30 nA nA nA nVp-p LT1126/LT1127 ELECTRICAL CHARACTERISTICS VS = ±15V, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER CONDITIONS (Note 1) Input Noise Voltage Density fO = 10Hz (Note 3) fO = 1000Hz (Note 2) fO = 10Hz fO = 1000Hz in Input Noise Current Density VCM CMRR PSRR AVOL Input Voltage Range Common Mode Rejection Ratio Power Supply Rejection Ratio Large Signal Voltage Gain VOUT SR GBW ZO IS Maximum Output Voltage Swing Slew Rate Gain-Bandwidth Product Open Loop Output Resistance Supply Current Per Amplifier Channel Separation VCM = ±12V VS = ± 4V to ±18V RL ≥ 10kΩ, VO = ±10V RL ≥ 2kΩ, VO = ±10V RL ≥ 2kΩ RL ≥ 2kΩ (Notes 2 and 6) fO = 10kHz (Note 2) VO = 0, IO = 0 f ≤ 10Hz (Note 8) VO = ±10V, RL = 2kΩ LT1126AM/AC LT1127AM/AC MIN TYP MAX 3.0 2.7 1.3 0.3 ± 12.0 ± 12.8 112 126 116 126 5.0 17.0 2.0 4.0 ± 13.0 ± 13.8 8.0 11 45 65 75 2.6 134 150 5.5 4.2 3.1 LT1126M/C LT1127M/C MIN TYP MAX 3.0 2.7 1.3 0.3 ± 12.0 ± 12.8 106 124 110 124 3.0 15.0 1.5 3.0 ± 12.5 ± 13.8 8.0 11 45 65 75 2.6 130 150 5.5 4.2 3.1 UNITS nV/√Hz nV/√Hz pA/√Hz pA/√Hz V dB dB V/µV V/µV V V/µs MHz Ω mA dB ELECTRICAL CHARACTERISTICS VS = ±15V, − 55°C ≤ TA ≤ 125°C, unless otherwise noted. SYMBOL VOS PARAMETER Input Offset Voltage ∆VOS ∆Temp IOS Average Input Offset Voltage Drift IB VCM CMRR PSRR AVOL Input Bias Current Input Voltage Range Common Mode Rejection Ratio Power Supply Rejection Ratio Large Signal Voltage Gain VOUT SR IS Maximum Output Voltage Swing Slew Rate Supply Current Per Amplifier Input Offset Current CONDITIONS (Note 1) LT1126 LT1127 (Note 4) ● ● LT1126 LT1127 ● ● ● LT1126AM LT1127AM MIN TYP MAX 50 170 55 190 0.3 1.0 ● ● VCM = ±11.3V VS = ± 4V to ±18V RL ≥ 10kΩ, VO = ±10V RL ≥ 2kΩ, VO = ±10V RL ≥ 2kΩ RL ≥ 2kΩ (Notes 2 and 6) The • denotes the specifications which apply over the full operating temperature range. Note 1: Typical parameters are defined as the 60% yield of parameter distributions of individual amplifiers; i.e., out of 100 LT1127s (or 100 LT1126s) typically 240 op amps (or 120) will be better than the indicated specification. Note 2: This parameter is 100% tested for each individual amplifier. Note 3: This parameter is sample tested only. Note 4: This parameter is not 100% tested. Note 5: The inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds ±1.4V, the input current should be limited to 25mA. ● ● ● ● ● ● ● ± 11.3 106 110 3.0 1.0 ± 12.5 7.2 18 45 18 55 ± 18 ± 55 ± 12 122 122 10.0 3.0 ± 13.6 10 2.8 3.5 LT1126M LT1127M MIN TYP 60 70 0.4 MAX 250 290 1.5 20 60 20 70 ± 20 ± 70 ± 11.3 ± 12 100 120 104 120 2.0 10.0 0.7 2.0 ± 12.0 ± 13.6 7.0 10 2.8 3.5 UNITS µV µV µV/°C nA nA nA V dB dB V/µV V/µV V V/µs mA Note 6: Slew rate is measured in AV = –10; input signal is ±1V, output measured at ±5V. Note 7: 0.1Hz to 10Hz noise can be inferred from the 10Hz noise voltage density test. See the test circuit and frequency response curve for 0.1Hz to 10Hz tester in the Applications Information section of the LT1007 or LT1028 datasheets. Note 8: This parameter is guaranteed but not tested. Note 9: The LT1126 and LT1127 are not tested and are not quality assurance sampled at –40°C and at 85°C. These specifications are guaranteed by design, correlation and/or inference from – 55°C, 0°C, 25°C, 70°C and/or 125°C tests. 3 LT1126/LT1127 ELECTRICAL CHARACTERISTICS VS = ±15V, 0°C ≤ TA ≤ 70°C, unless otherwise noted. SYMBOL VOS PARAMETER Input Offset Voltage ∆VOS/∆T IOS Average Input Offset Voltage Drift Input Offset Current IB VCM CMRR PSRR AVOL Input Bias Current Input Voltage Range Common Mode Rejection Ratio Power Supply Rejection Ratio Large Signal Voltage Gain VOUT SR IS Maximum Output Voltage Swing Slew Rate Supply Current Per Amplifier CONDITIONS (Note 1) LT1126 LT1127 (Note 4) LT1126 LT1127 VCM = ±11.5V VS = ±4V to ±18V RL ≥ 10kΩ, VO = ±10V RL ≥ 2kΩ, VO = ±10V RL ≥ 2kΩ RL ≥ 2kΩ (Notes 2 and 6) ELECTRICAL CHARACTERISTICS MIN ● ● ● ● ● ● ● ● ● ● ● ● ● ● ± 11.5 109 112 4.0 1.5 ± 12.5 7.5 LT1126AC LT1127AC TYP MAX 35 120 40 140 0.3 1.0 6 25 7 35 ±8 ± 35 ± 12.4 125 125 15.0 3.5 ± 13.7 10.5 2.7 3.3 LT1126C LT1127C MIN TYP MAX 45 170 50 210 0.4 1.5 7 35 8 45 ±9 ± 45 ± 11.5 ± 12.4 102 122 107 122 2.5 14.0 1.0 2.5 ± 12.0 ± 13.7 7.3 10.5 2.7 3.3 UNITS µV µV µV/°C nA nA nA V dB dB V/µV V/µV V V/µs mA VS = ±15V, −40°C ≤ TA ≤ 85°C, unless otherwise noted. (Note 9) SYMBOL PARAMETER CONDITIONS (Note 1) VOS Input Offset Voltage LT1126 LT1127 ∆VOS /∆T IOS Average Input Offset Voltage Drift Input Offset Current IB VCM CMRR PSRR AVOL Input Bias Current Input Voltage Range Common Mode Rejection Ratio Power Supply Rejection Ratio Large Signal Voltage Gain VOUT SR IS Maximum Output Voltage Swing Slew Rate Supply Current Per Amplifier LT1126 LT1127 VCM = ±11.4V VS = ± 4V to ±18V RL ≥ 10kΩ, VO = ±10V RL ≥ 2kΩ, VO = ±10V RL ≥ 2kΩ RL ≥ 2kΩ (Note 6) LT1126AC LT1127AC MIN TYP MAX ● ● ● ● ● ● ● ● ● ● ● ● ● ● ± 11.4 107 111 3.5 1.2 ± 12.5 7.3 40 140 45 160 0.3 1.0 15 40 15 50 ± 15 ± 50 ± 12.2 124 124 12.0 3.2 ± 13.6 10.2 2.8 3.4 LT1126C LT1127C MIN TYP MAX 50 200 55 240 0.4 1.5 17 55 17 65 ± 17 ± 65 ± 11.4 ± 12.2 101 121 106 121 2.2 12.0 0.8 2.3 ± 12.0 ± 13.6 7.1 10.2 2.8 3.4 UNITS µV µV µV/°C nA nA nA V dB dB V/µV V/µV V V/µs mA U W TYPICAL PERFOR A CE CHARACTERISTICS The typical behavior of many LT1126/LT1127 parameters is identical to the LT1124/LT1125. Please refer to the LT1124/LT1125 data sheet for the following performance characteristics: 0.1Hz to 10Hz Voltage Noise 0.01Hz to 1Hz Voltage Noise Current Noise vs Frequency Input Bias or Offset Current vs Temperature Output Short Circuit Current vs Time 4 Input Bias Current Over the Common Mode Range Voltage Gain vs Temperature Input Offset Voltage Drift Distribution Offset Voltage Drift with Temperature of Representative Units Output Voltage Swing vs Load Current Common Mode Limit vs Temperature Channel Separation vs Frequency Warm-Up Drift Power Supply Rejection Ratio vs Frequency LT1126/LT1127 U W TYPICAL PERFOR A CE CHARACTERISTICS Gain, Phase Shift vs Frequency Small-Signal Transient Response 50 VS = ±15V TA = 25°C C L = 10pF Ø 40 80 30 100 20 120 GAIN 10 140 0 1.0 0.1 – 10V – 50mV AVCL = –10V VS = ±15V OR ±5V CL = 15pF 180 100 10 0V 0mV 160 –10 10V 50mV PHASE SHIFT (DEGREES) VOLTAGE GAIN (dB) Large-Signal Transient Response 60 AVCL = –10V VS = ±15V LT1126 • TPC02 LT1126 • TPC03 FREQUENCY (MHz) LT1126 • TPC01 Common Mode Rejection Ratio vs Frequency Voltage Gain vs Frequency 100 80 60 40 20 0 –20 0.01 1 100 10k 1M 120 100 80 60 40 20 0 100M 10k 100k 1M 1 0 10M AV = –100 0.001 AV = –10 10k 20k TOTAL HARMONIC DISTORTION + NOISE (%) ZL = 2k/15pF VO = 20Vp-p AV = –10, –100 MEASUREMENT BANDWIDTH = 10Hz TO 80kHz LT1126 • TPC07 ±10 ±15 LT1126 • TPC06A 0.1 0.010 ZL = 2k/15pF VO = 20Vp-p AV = +10, +100 MEASUREMENT BANDWIDTH = 10Hz TO 80kHz AV = +100 0.001 0.0001 20 AV = +10 100 1k ± 20 Intermodulation Distortion (CCIF Method)* vs Frequency 10k 20k FREQUENCY (Hz) FREQUENCY (Hz) ±5 SUPPLY VOLTAGE (V) Total Harmonic Distortion and Noise vs Frequency for Non-Inverting Gain 0.1 1k –55°C 2 LT1126 • TPC05 Total Harmonic Distortion and Noise vs Frequency for Inverting Gain 100 25°C FREQUENCY (Hz) LT1126 • TPC04 0.0001 20 125°C 0 1k FREQUENCY (Hz) 0.010 SUPPLY CURRENT PER AMPLIFIER (mA) 120 TA = 25°C VS = ±15V VCM = ±10V 140 INTERMODULATION DISTORTION (IMD) (%) VOLTAGE GAIN (dB) 140 COMMON MODE REJECTION RATIO (dB) VS = ±15V TA = 25°C 160 TOTAL HARMONIC DISTORTION + NOISE (%) Supply Current vs Supply Voltage 3 160 180 0.1 0.010 ZL = 2k/15pF f (IM) = 1kHz fO = 13.5kHz VO = 20Vp-p AV = –10 MEASUREMENT BANDWIDTH = 10Hz TO 80kHz 0.001 0.0001 3k LT1126 10k 20k FREQUENCY (Hz) LT1126 • TPC08 LT1126 • TPC09 *See LT1115 data sheet for definition of CCIF testing 5 LT1126/LT1127 W U U UO APPLICATI S I FOR ATIO Matching Specifications High Speed Operation In many applications the performance of a system depends on the matching between two op amps, rather than the individual characteristics of the two devices. The three op amp instrumentation amplifier configuration shown in this data sheet is an example. Matching characteristics are not 100% tested on the LT1126/LT1127. When the feedback around the op amp is resistive (RF), a pole will be created with RF, the source resistance and capacitance (RS, CS), and the amplifier input capacitance (CIN ≈ 2pF). In low closed loop gain configurations and with RS and RF in the kilohm range, this pole can create excess phase shift and even oscillation. A small capacitor (CF) in parallel with RF eliminates this problem. With RS (CS + CIN) = RF CF, the effect of the feedback pole is completely removed. C Some specifications are guaranteed by definition. For example, 70µV maximum offset voltage implies that mismatch cannot be more than 140µV. 112dB (= 2.5µV/V) CMRR means that worst case CMRR match is 106dB (5µV/V). However, the following table can be used to estimate the expected matching performance between the two sides of the LT1126, and between amplifiers A and D, and between amplifiers B and C of the LT1127. F RF – RS CIN CS OUTPUT + LT1126 • TA02 Expected Match LT1126AM/AC LT1127AM/AC 50% YIELD 98% YIELD PARAMETER VOS Match, ∆VOS LT1126 LT1127 Temperature Coefficient Match Average Non-Inverting IB Match of Non-Inverting IB CMRR Match PSRR Match 20 30 0.35 6 7 126 127 LT1126M/C LT1127M/C 50% YIELD 98% YIELD UNITS 30 50 0.5 7 8 123 127 130 180 1.5 25 30 112 114 µV µV µV/°C nA nA dB dB 110 150 1.0 18 22 115 118 UO TYPICAL APPLICATI S Gain 1000 Amplifier with 0.01% Accuracy, DC to 5Hz 340k 1% TYPICAL PRECISION OP AMP +15V – LT1126 + INPUT 1.0 20k TRIM GAIN ERROR (%) 365Ω 1% 15k 5% Gain Error vs Frequency Closed Loop Gain = 1000 OUTPUT RN60C FILM RESISTORS –15V THE HIGH GAIN AND WIDE BANDWIDTH OF THE LT1126/LT1127 IS USEFUL IN LOW FREQUENCY HIGH CLOSED LOOP GAIN AMPLIFIER APPLICATIONS. A TYPICAL PRECISION OP AMP MAY HAVE AN OPEN LOOP GAIN OF ONE MILLION WITH 500kHz BANDWIDTH. AS THE GAIN ERROR PLOT SHOWS, THIS DEVICE IS CAPABLE OF 0.1% AMPLIFYING ACCURACY UP TO 0.3Hz ONLY. EVEN INSTRUMENTATION RANGE SIGNALS CAN VARY AT A FASTER RATE. THE LT1126/LT1127 “GAIN PRECISION — BANDWIDTH PRODUCT” IS 330 TIMES HIGHER, AS SHOWN. 0.1 0.01 LT1126/LT1127 GAIN ERROR = 0.001 0.1 1 CLOSED LOOP GAIN OPEN LOOP GAIN 10 100 LT1126 • TA03 FREQUENCY (Hz) LT1126 • TA04 6 LT1126/LT1127 UO TYPICAL APPLICATI S Low Noise, Wideband, Gain = 100 Amplifier with High Input Impedance 1.1k 120 – 2.4k 1/4 LT1127 500Ω 7.5k + 1.1k 2.4k – 1/4 LT1127 120 OUTPUT + – 1/4 LT1127 + INPUT 1.1k 120 2.4k –3dB BANDWIDTH = 910 kHz GAIN BANDWIDTH PRODUCT = 91.0MHz – 1/4 LT1127 WIDEBAND NOISE = 3.2nV/√Hz = 1.85nV/√Hz REFERRED TO INPUT √3 + RMS NOISE DC TO FULL BANDWIDTH = 21.2µV REFERRED TO INPUT LT1126 • TA05 W W SCHE ATIC DIAGRA (1/2 LT1126, 1/4 LT1127) V+ 360µA Q7 570µA 100µA Q28 21k 200pF 21k 3.6k 3.6k 5pF Q27 Q18 Q9 Q3 Q10 Q17 Q8 OUTPUT Q26 Q19 NON-INVERTING INPUT (+) 20 Q25 Q20 20 V– Q1A Q2A Q1B 400 Q30 Q2B 67pF INVERTING INPUT (–) 20pF V+ Q13 Q29 V+ Q22 Q11 Q12 Q15 Q16 Q23 Q24 200µA 200µA 100µA 200 6k 200 6k 50 V– LT1126 • TA06 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 7 LT1126/LT1127 U PACKAGE DESCRIPTIO 160°C 0.015 – 0.060 (0.381 – 1.524) θJA 0.008 – 0.018 (0.203 – 0.460) 100°C/W 0.405 (10.287) MAX 0.005 (0.127) MIN 0.200 (5.080) MAX 0.290 – 0.320 (7.366 – 8.128) J8 Package 8-Lead Ceramic DIP TJ MAX Dimensions in inches (millimeters) unless otherwise noted. 8 0.025 (0.635) RAD TYP 0.220 – 0.310 (5.588 – 7.874) 1 0.038 – 0.068 (0.965 – 1.727) θJA 140°C 130°C/W 0.300 – 0.320 (7.620 – 8.128) 0.065 (1.651) TYP +0.025 0.325 –0.015 (8.255 +0.635 –0.381) θJA 140°C 190°C/W 0.100 ± 0.010 (2.540 ± 0.254) 7 6 5 0.250 ± 0.010 (6.350 ± 0.254) 0.020 (0.508) MIN 1 0.018 ± 0.003 (0.457 ± 0.076) 2 3 4 N8 1291 0.189 – 0.197 (4.801 – 5.004) S8 Package 8-Lead Plastic SOIC TJ MAX 0.125 (3.175) MIN 0.045 ± 0.015 (1.143 ± 0.381) 8 0.010 – 0.020 × 45° (0.254 – 0.508) TJ MAX θJA 160°C 80°C/W 0.228 – 0.244 (5.791 – 6.198) 0.016 – 0.050 0.406 – 1.270 0.150 – 0.157 (3.810 – 3.988) 0.050 (1.270) BSC 0.014 – 0.019 (0.356 – 0.483) 0.200 (5.080) MAX 0.290 – 0.320 (7.366 – 8.128) 0.008 – 0.018 (0.203 – 0.460) 0° – 15° 0.038 – 0.068 (0.965 – 1.727) 0.100 ± 0.010 (2.540 ± 0.254) 0.014 – 0.026 (0.360 – 0.660) N Package 14-Lead Plastic DIP TJ MAX θJA 140°C 110°C/W TJ MAX θJA 140°C 130°C/W 8 13 14 11 12 10 9 8 0.220 – 0.310 (5.588 – 7.874) 2 3 5 4 6 7 0.098 (2.489) MAX J14 1291 0.065 (1.651) TYP 0.770 (19.558) MAX 14 13 12 11 10 9 8 1 2 3 4 5 6 7 0.260 ± 0.010 (6.604 ± 0.254) +0.025 0.325 –0.015 0.075 ± 0.015 (1.905 ± 0.381) (8.255 +0.635 –0.381) SOL Package 16-Lead Plastic SOL S8 1291 0.785 (19.939) MAX 1 0.125 (3.175) MIN 0.009 - 0.015 (0.229 - 0.381) 0.005 (0.127) RAD MIN 4 0.025 (0.635) RAD TYP 0.045 – 0.065 (1.143 – 1.651) 0.015 (0.380) MIN 0.130 ± 0.005 (3.302 ± 0.127) 3 2 0.005 (0.127) MIN 0.015 – 0.060 (0.381 – 1.524) 0.385 ± 0.025 (9.779 ± 0.635) 0.300 – 0.325 (7.620 – 8.255) 5 6 0.004 – 0.010 (0.102 – 0.254) 0.008 – 0.010 (0.203 – 0.254) 0°– 8° TYP 7 0.053 – 0.069 (1.346 – 1.753) 1 J Package 14-Lead Ceramic DIP 4 0.400 (10.160) MAX 8 0.009 - 0.015 (0.229 - 0.381) 3 J8 1291 0.130 ± 0.005 (3.302 ± 0.127) 0.045 – 0.065 (1.143 – 1.651) 2 0.055 (1.397) MAX 0.125 3.175 0.100 ± 0.010 MIN (2.540 ± 0.254) 0.014 – 0.026 (0.360 – 0.660) TJ MAX 5 0° – 15° 0.385 ± 0.025 (9.779 ± 0.635) N8 Package 8-Lead Plastic DIP 6 7 0.018 ± 0.003 (0.457 ± 0.076) 0.100 ± 0.010 (2.540 ± 0.254) 0.291 – 0.299 (7.391 – 7.595) (NOTE 2) 0.010 – 0.029 × 45° (0.254 – 0.737) 0.093 – 0.104 (2.362 – 2.642) 0.125 (3.175) MIN N14 1291 0.398 – 0.413 (10.109 – 10.490) (NOTE 2) 0.037 – 0.045 (0.940 – 1.143) 16 15 14 13 12 11 10 9 0° – 8° TYP 0.009 – 0.013 (0.229 – 0.330) NOTE 1 0.050 (1.270) TYP 0.016 – 0.050 (0.406 – 1.270) NOTE: 1. PIN 1 IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES ARE THE MANUFACTURING OPTIONS. THE PART MAY BE SUPPLIED WITH OR WITHOUT ANY OF THE OPTIONS. 2. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 INCH (0.15mm). Linear Technology Corporation 0.004 – 0.012 (0.102 – 0.305) 0.394 – 0.419 (10.007 – 10.643) NOTE 1 0.014 – 0.019 (0.356 – 0.482) TYP 1 2 3 4 5 6 7 8 BA/GP 0192 10K REV 0 1630 McCarthy Blvd., Milpitas, CA 95035-7487 (408) 432-1900 ● FAX: (408) 434-0507 ● TELEX: 499-3977 LINEAR TECHNOLOGY CORPORATION 1992