MCC LLSD101C

MCC
LLSD101A
THRU
LLSD101C
omponents
21201 Itasca Street Chatsworth
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Features
l
Low Reverse Recovery Time
l
Low Reverse Capacitance
l
Low Forward Voltage Drop
l
Guard Ring Construction for Transient Protection
Schottky Barrier
Switching Diode
Mechanical Data
l Case: MiniMELF, Glass
MINIMELF
l Terminals: Solderable per MIL -STD -202, Method 208
l Polarity: Indicated by Cathode Band
l Weight: 0.05 grams ( approx.)
Cathode Mark
Maximum Ratings @ 25oC Unless Otherwise Specified
Characteristic
C
Symbol LLSD101A LLSD101B LLSD101C
V RRM
VRWM
60V
50V
40V
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
42V
35V
B
28V
RMS Reverse Voltage
VR(RMS)
Forward Continuous Current(Note 1)
I FM
15mA
Non-Repetitive Peak @ t<=1.0s
Forward Surge Current @ t=10us
I FSM
50mA
2.0A
Power Dissipation(Note 1)
Pd
400mW
A
DIMENSION
Thermal Resistance(Note 1)
R
375K/W
Operation & Storage Temp. Range
Tj, T STG
-55 to 150 C
DIM
o
Electrical Characteristics @ 25oC Unless Otherwise Specified
Charateristic
Symbol
Peak
LLSD101A
Reverse LLSD101B
IR M
Current
LLSD101C
LLSD101A
LLSD101B
Forward
LLSD101C
VFM
Volt. Drop LLSD101A
LLSD101B
LLSD101C
Junction
LLSD101A
Capacitance LLSD101B
Cj
LLSD101C
Reverse Recovery Time
t rr
Min
Max
Unit
-----
200
nA
-----
---------
0.41
0.40
0.39
1.00
0.95
0.90
2.0
2.1
2.2
1.0
V
INCHES
MM
NOTE
MIN
MAX
MIN
MAX
A
B
.134
.008
.142
.016
3.40
.20
3.60
.40
C
.055
.059
1.40
1.50
Test Cond.
V R =50V
V R =40V
V R =30V
I F=1.0mA
I F=1.0mA
I F=1.0mA
I F= 1 5 m A
I F= 1 5 m A
I F= 1 5 m A
SUGGESTED SOLDER
PAD LAYOUT
0.105
0.075”
0.030”
pF
V R =0V, f=1.0MHz
ns
I F= I R =5mA,
recover to 0.1 I
R
Note: 1. Valid provided that electrodes are kept at ambient temperature
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MCC
LLSD101A thru LLSD101C
2
10
A
C
Cj, CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
B
Tj = 25°C
1.0
0.1
0.01
0
0.5
VF, FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristic
Variations for Primary Conduction
1.0
C
1
B
A
0
0
10
20
30
40
50
VR, REVERSE VOLTAGE (V)
Fig. 2 Typ. Junction Capacitance vs Reverse Voltage
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