SD101A THRU SD101C Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features l Low Reverse Recovery Time l Low Reverse Capacitance l Low Forward Voltage Drop Small Signal Schottky Diodes l Guard Ring Construction for Transient Protection Mechanical Data l Case: DO-35, Glass DO-35 l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: Indicated by Cathode Band Maximum Ratings @ 25oC Unless Otherwise Specified D Characteristic Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) Maximum sigle cycle surge 10us square wave IFSM 2.0A Power Dissipation(Note 1) Thermal Resistance, Junction to Ambient Pd 400mW R 300K/W Junction Tmperature Tj 125 C Operation/Storage Temp. Range SD101A SD101B SD101C 60V 50V 40V A Cathode Mark 42V 35V 28V B TSTG D o C o -55 to +150 C Electrical Characteristics @ 25oC Unless Otherwise Specified Charateristic Symbol Max Test Condition Leakage Current SD101A 200nA V R =50V SD101B IR 200nA V R =40V SD101C 200nA V R =30V Maximum Forward SD101A Voltage Drop SD101B SD101C SD101A SD101B SD101C VF Junction Cap. SD101A SD101B SD101C Cj Reverse Recovery Time trr 0.41V 0.4V 0.39V I F =1mA I F =15mA 1V 0.95V 0.9V 2.0pF 2.1pF V R =0V, f=1.0MHz 2.2pF I F =IR =50mA, recover to 1ns 200mA/0.1I R DIMENSIONS DIM A B C D INCHES MIN ------1.000 Note: 1. Valid provided that electrodes are kept at ambient temperature www.cnelectr.com MAX .166 .079 .020 --- MM MIN ------25.40 MAX 4.2 2.00 .52 --- NOTE SD101A thru SD101C Figure 2. Typical forward conduction curve of combination Schottky barrier and PN junction guard ring Figure 1. Typical variation of forward. current vs.fwd. Voltage for primary conduction through the schottky barrier mA mA A B A B C C IF IF VF VF Figure 4. Typical capacitance curve as a function of reverse voltage Figure 3.Typical variation of reverse current at versus temperature mA mA IR B A C IR VR www.cnelectr.com VR