MCC MMBD914

MCC
omponents
21201 Itasca Street Chatsworth
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MMBD914
Features
•
•
•
Low Current Leakage
Low Cost
Small Outline Surface Mount Package
350mW 100 Volt
Silicon Epitaxial Diode
C
Pin Configuration
Top View
5D
SOT-23
A
A
D
Maximum Ratings
•
•
•
C
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 357K/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
Average Rectified
Current
Power Dissipation
Junction
Temperature
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Reverse Recovery
Time
VR
VRM
75V
100V
IO
150mA
PTOT
TJ
350mW
175°C
IFSM
1.0A
VF
.855V
IFM = 10mA;
TJ = 25°C*
IR
25nA
TJ = 25°C
VR =20Volts
CJ
F
B
E
H
G
J
DIMENSIONS
Resistive Load
f > 50Hz
t=1s,Non-Repetitive
Measured at
1.0MHz, VR=0V
Trr
4nS
IF=10mA
VR = 6V
RL=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
2pF
.037
.950
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.037
.950
inches
mm
MCC
1000
10,000
100
IR, LEAKAGE CURRENT (nA)
IF, INSTANTANEOUS FORWARD CURRENT (mA)
MMBD914
10
1.0
0.1
1000
100
10
VR = 20V
1
0.01
0
1
2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
0
100
200
Tj, JUNCTION TEMPERATURE (°C)
Fig. 2 Leakage Current vs Junction Temperature
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