MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# DL4154 Features l Fast Switching Speed l Low Current Leakage l Low Cost l Compression Bond Construction l Surface Mount Application Schottky Barrier Switching Diode Maximum Ratings o MINIMELF o l Operation & Storage Temperature: -55 C to +150 C l Maximum Thermal Resistance: 400k/W Junction to Ambient Electrical Characteristics @ 25oC Unless Otherwise Specified Reverse Voltage VR 25V Peak Reverse Voltage VRM 35V IO 150mA P TOT TJ 500mW VF 1.0V IR 0.1uA Average Rectified Current Power Dissipation Junction Temperature Maximum Instantaneous Forward Volt. Maximum DC Reverse Current At Rated DC Blocking Volt. Typical Junction Capacitance Reverse Recovery Time CJ T rr Cathode Mark Resistive Load f>50Hz C 175 o C B IFM=10mA; A o T J=25 C VR =25V T J=25 oC 4pF Measured at 1.0MHz, V R =4.0V 2nS IF=10mA V R =6V IR =1mA R L=100OHMS DIMENSION DIM INCHES MM NOTE MIN MAX MIN MAX A B .134 .008 .142 .016 3.40 .20 3.60 .40 C .055 .059 1.40 1.50 SUGGESTED SOLDER PAD LAYOUT 0.105 Pulse test: Pulse width 300 usec, Duty cycle 2%. 0.075” 0.030” www.mccsemi.com MCC DL4154 1000 IF, FORWARD CURRENT (mA) Pd, POWER DISSIPATION (mW) 500 400 300 200 100 0 0 100 100 0.1 0 1 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 10,000 IR, LEAKAGE CURRENT (nA) RELATIVE CAPACITANCE RATIO [CTOT(VR)/CTOT(0V)] 2 VF, FORWARD VOLTAGE (V) Fig. 2 Forward Characteristics Tj = 25°C f = 1.0MHz 1.1 Tj = 25°C 1.0 0.01 200 Tj = 100°C 10 1.0 0.9 0.8 1,000 100 10 0.7 0 2 4 6 8 VR, REVERSE VOLTAGE (V) Fig. 3 Relative Capacitance Variation 10 1 0 100 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Leakage Current vs Junction Temperature www.mccsemi.com