MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# RB421D Features • • • Low VF ( VF=0.45V Typ at 100mA ) High reliability Small surface mounting type ( SMD3 ) 0.1 Amp Surface Mount Schottky Barrier Diode 40 Volts Mechanical Data • • • Case :SOT-346,Molded Plastic Low power rectification Silicon epitaxial planar SOT-346 A L Maximum Ratings • • 3 S 2 B 1 3 2 CATHODE Operating Junction Temperature: 125°C Storage Temperature: -40°C to +125°C ANODE D G MCC Catalog Number Device Marking RB421D D3C Maximum Recurrent Peak Reverse Voltage 40V Maximum RMS Voltage 28V Maximum DC Blocking Voltage 40V K H DIMENSIONS INCHES Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Forward Voltage RB421D Maximum DC Reverse Current At Rated DC Blocking Voltage IF(AV) 0.1A TA = 25°C IFSM 1.0A 8.3ms, half sine 0.55V I FM = 100mA IFM = 10mA TA = 25°C VF IR 0.34V 30µΑ J C DIM A B C D G H J K L S MIN .106 .051 .039 .014 .067 .000 .004 .008 .049 .089 MM MAX .122 .067 .051 .020 .091 .004 .010 .024 .065 .118 MIN 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 MAX 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 NOTE Suggested Solder Pad Layout .031 .800 .039 1.000 0.098-0.118 2.5-3.0 .094 2.400 TA = 25°C VR=10V .037 .950 .037 .950 www.mccsemi.com inches mm MCC RB421D 10m REVERSE CURRENT : IR (A) 100m 1m −2 5°C 10m 100µ 10µ 0 Typ. pulse measurement Typ. pulse measurement Ta =1 25 °C 75 °C 25 °C FORWARD CURRENT : IF (A) 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Ta=125°C 1m 100µ 75°C 10µ 25°C 1µ 0.1µ 0 5 10 15 20 25 30 35 CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta = 25°C) 100 10 1 0.1 0 5 Io CURRENT (%) 15 20 25 REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 100 80 60 40 20 0 0 10 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C) Fig. 4 Derating curve (mounting on glass epoxy PCBs) www.mccsemi.com