MCC RB421D

MCC
omponents
21201 Itasca Street Chatsworth
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RB421D
Features
•
•
•
Low VF ( VF=0.45V Typ at 100mA )
High reliability
Small surface mounting type ( SMD3 )
0.1 Amp Surface Mount
Schottky Barrier Diode
40 Volts
Mechanical Data
•
•
•
Case :SOT-346,Molded Plastic
Low power rectification
Silicon epitaxial planar
SOT-346
A
L
Maximum Ratings
•
•
3
S
2
B
1
3
2
CATHODE
Operating Junction Temperature: 125°C
Storage Temperature: -40°C to +125°C
ANODE
D
G
MCC
Catalog
Number
Device
Marking
RB421D
D3C
Maximum
Recurrent
Peak Reverse
Voltage
40V
Maximum
RMS
Voltage
28V
Maximum
DC
Blocking
Voltage
40V
K
H
DIMENSIONS
INCHES
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage
RB421D
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IF(AV)
0.1A
TA = 25°C
IFSM
1.0A
8.3ms, half sine
0.55V
I FM = 100mA
IFM = 10mA
TA = 25°C
VF
IR
0.34V
30µΑ
J
C
DIM
A
B
C
D
G
H
J
K
L
S
MIN
.106
.051
.039
.014
.067
.000
.004
.008
.049
.089
MM
MAX
.122
.067
.051
.020
.091
.004
.010
.024
.065
.118
MIN
2.70
1.30
1.00
0.35
1.70
0.00
0.10
0.20
1.25
2.25
MAX
3.10
1.70
1.30
0.50
2.30
0.10
0.26
0.60
1.65
3.00
NOTE
Suggested Solder
Pad Layout
.031
.800
.039
1.000
0.098-0.118
2.5-3.0
.094
2.400
TA = 25°C
VR=10V
.037
.950
.037
.950
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inches
mm
MCC
RB421D
10m
REVERSE CURRENT : IR (A)
100m
1m
−2
5°C
10m
100µ
10µ
0
Typ.
pulse measurement
Typ.
pulse measurement
Ta
=1
25
°C
75
°C
25
°C
FORWARD CURRENT : IF (A)
1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Ta=125°C
1m
100µ
75°C
10µ
25°C
1µ
0.1µ
0
5
10
15
20
25
30
35
CAPACITANCE BETWEEN TERMINALS : CT (pF)
!Electrical characteristic curves (Ta = 25°C)
100
10
1
0.1
0
5
Io CURRENT (%)
15
20
25
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between
terminals characteristics
100
80
60
40
20
0
0
10
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
25
50
75
100
125
AMBIENT TEMPERATURE : Ta (°C)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
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