MCC TSMBJ0506C THRU TSMBJ0524C omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • • • • • Transient Voltage Protection Device 75 to 320 Volts Oxide-Glass passivated Junction Bi-Directional protection in a single device Surge capabilities up to 80A@10/1000us or 250A@8/20us High Off-State impedance and Low On-State voltage Plastic material has UL flammability classification 94V -0 DO-214AA (SMBJ) Mechanical Data • • • Case : Molded plastic Polarity : None cathode band denotes Approx Weight : 0.093grams H Cathode Band J Maximum Rating Characteristic Non-repetitive peak impulse current Non-repetitive peak On-state current Operating temperature range Junction and storage temperature range Symbol Value Unit IPP 80A 10/1000us ITSM 30A 8.3ms, one-half cycle TOP -40~150oC TJ, TSTG -55~150oC E C D F B G DIMENSIONS DIM A B C D E F G H J Thermal Resistance Characteristic Thermal Resistance junction to lead Thermal Resistance junction to ambient Typical positive temperature coefficient for breakdown voltage A Symbol RqJL Value Unit o 20 C/W RqJA 100oC/W △VBR/△TJ 0.1%/oC INCHES MIN .078 .077 .002 --.030 .065 .205 .160 .130 MAX .096 .083 .008 .02 .060 .091 .220 .180 .155 MM MIN 2.00 1.96 .05 --.76 1.65 5.21 4.06 3.30 MAX 2.44 2.10 .20 .51 1.52 2.32 5.59 4.57 3.94 SUGGESTED SOLDER PAD LAYOUT 0.090" On recommended pad layout 0.085” 0.070” www.mccsemi.com NOTE MCC TSMBJ0506C thru TSMBJ0524C ELECTRICAL CHARACTERISTIC @25℃ Unless otherwise specified On-State Rated Off-state Breakover Voltage Breakover Current Repetitive OffLeakage Voltage @IT =1.0A state Voltage Curr ent@V DRM Parameter Symbol Units Limit TSMBJ0506C TSMBJ0507C TSMBJ0510C TSMBJ0512C TSMBJ0516C TSMBJ0518C TSMBJ0522C TSMBJ0524C VDRM Volts Max 75 90 140 160 190 220 275 320 IDRM uA Max 5 5 5 5 5 5 5 5 VBO Volts Max 98 130 180 220 265 300 350 400 VT Volts Max 5 5 5 5 5 5 5 5 IBOmA Min 50 50 50 50 50 50 50 50 Holding Current IBO+ mA Max 800 800 800 800 800 800 800 800 IHmA Min 150 150 150 150 150 150 150 150 Off-State Capacitance IH+ mA Max 800 800 800 800 800 800 800 800 CJ pF Typ. 140 90 90 90 60 60 60 60 2/10 us GR-1089-CORE 250 8/20 us IEC 61000-4-5 250 10/160 us FCC Part 68 150 10/700 us ITU-T K20/21 100 10/560 us FCC Part 68 100 10/1000 us GR-1089-CORE 80 Symbol Ipp ; PEAK PULSE CURRENT (%) MAXIMUM RATED SURGE WAVEFORM Waveform Standard Ipp (A) 100 Peak value (Ipp) tr = rise time to peak value tp = decay time to half value 50 Half value 0 tr tp TIME Parameter I VDRM Stand-off voltage IDRM Leakage current at stand-off voltage VBR Breakdown voltage IBR Breakdown current VBO Breakover voltage IPP IBO IH IBO Breakover current IH Holding current VT On state voltage IPP Peak pulse current CO Off-state capacitance IBR IDRM VT NOTE: 1 NOTE: 2 NOTE： 1. I H > ( V L/ R L) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time. It does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias. www.mccsemi.com V VBR VDRM VBO MCC TSMBJ0506C thru TSMBJ0524C Fig.1 - Off-State Current v.s Junction Temperature Fig.2 - Relative Variation of Breakdown Voltage v.s Junction Temperature 100 VBR(TJ) NORMALISED BREAKDOWN VOLTAGE I(DRM) , OFF-STATE CURRENT(uA) 1.2 10 1 VDRM = 50V 0.1 0.01 1.15 VBR(TJ=25℃) 1.1 1.05 1 0.95 0.001 0.9 -25 0 25 50 75 100 125 150 -50 Tj , JUNCTION TEMPERATURE (℃) -25 0 25 50 75 100 125 150 175 Tj ; JUNCTION TEMPERATURE (℃) Fig.3 - Relative Variation of Breakover Voltage v.s Junction Temperature Fig.4 - On-State Current v.s On-State Voltage 100 I(T) ; ON-STATE CURRENT (A) NORMALISED BREAKOVER VOLTAGE 1.1 VBO(TJ) VBO(TJ=25℃) 1.05 1 0.95 10 TJ = 25℃ 1 -50 -25 0 25 50 75 100 125 150 175 1 10 Tj ; JUNCTION TEMPERATURE (℃) V(T) ; ON-STATE VOLTAGE Fig.5 - Relative Variation of Holding Current v.s Junction Temperature Fig.6 - Relative Variation of Junction Capacitance v.s Reverse Voltage Bias 1 1.4 NORMALISED CAPACITANCE NORMALISED HOLDING CURRENT 1.6 1.2 1 0.8 IH(TJ) 0.6 IH(TJ =25℃) CO(VR) CO(VR = 1V) Tj =25℃ f=1MHz VRMS = 1V 0.4 0.2 0.1 -50 -25 0 25 50 75 Tj ; JUNCTION TEMPERATURE (℃) 100 125 1 10 VR ; REVERSE VOLTAGE (V) www.mccsemi.com 100 MCC TSMBJ0506C thru TSMBJ0524C TYPICAL APPLICATION CIRCUITS FUSE RING TELECOM EQUIPMENT TSPD 1 E.G. MODEM TIP RING PTC TSPD 1 TELECOM EQUIPMENT E.G. ISDN TSPD 2 TIP RING PTC PTC TSPD 2 TSPD 1 TSPD 3 TIP TELECOM EQUIPMENT E.G. LINE CARD PTC The PTC (Positive Temperature Coefficient) is an overcurrent protection device. www.mccsemi.com