STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • RoHS compliant Applications • General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits TO-220-2L 1. Cathode 1. Cathode 2. Anode 2. Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM Peak Repetitive Reverse Voltage VRWM VR IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG Parameter Ratings 600 Units V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V 8 A @ TC = 89oC 60 Operating and Storage Temperature Range A o -65 to +150 C Thermal Characteristics Symbol RθJC Parameter Ratings Maximum Thermal Resistance, Junction to Case Units o 3.6 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F08S60SN FFP08S60SNTU TO220-2L - - 50 ©2008 Fairchild Semiconductor Corporation FFP08S60SN Rev. A 1 www.fairchildsemi.com FFP08S60SN April 2008 Symbol Min. Typ. Max. Units VFM1 IF = 8A IF = 8A Parameter TC = 25oC TC = 125oC - 2.7 2.1 3.4 - V IRM1 VR = 600V VR = 600V TC = 25oC TC = 125oC - - 100 500 µA trr IF = 1A, di/dt = 100A/µs, VR = 30V TC = 25oC - 13 - ns - 15 2.5 0.4 19 25 - ns A - 32 3.8 0.7 62 - nC 10 - - mJ trr Irr S factor Qrr IF = 8A, di/dt = 200A/µs, VR = 390V trr Irr S factor Qrr IF = 8A, di/dt = 200A/µs, VR = 390V WAVL Avalanche Energy ( L = 40mH) o TC = 25 C TC = 125oC nC ns A Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms FFP08S60SN Rev. A 2 www.fairchildsemi.com FFP08S60SN Electrical Characteristics TC = 25oC unless otherwise noted FFP08S60SN Typical Performance Characteristics Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 20 40 10 10 o TC = 125 C TC = 125 C Reverse Current , IR [µA] Forward Current, IF [A] o o TC = 75 C 1 o TC = 25 C 1 o TC = 75 C 0.1 0.01 o TC = 25 C 0.1 0 1 2 3 4 Forward Voltage, VF [V] 5 Figure 3.Typical Junction Capacitance 0.001 Reverse Recovery Time, trr [ns] Capacitances , Cj [pF] 30 20 10 1 10 Reverse Voltage, VR [V] o o TC = 75 C 20 o TC = 25 C 200 300 400 di/dt [A/µs] 500 600 Figure 6. Forward Current Derating Curve 15 Average Forward Current, IF(AV) [A] 10 Reverse Recovery Current, Irr [A] 600 TC = 125 C 30 10 100 100 Figure 5. Typical Reverse Recovery Current vs. di/dt 8 o TC = 125 C 4 o TC = 75 C o TC = 25 C 2 FFP08S60SN Rev. A 500 IF = 8A 40 0 100 200 300 400 Reverse Voltage, VR [V] 40 Typical Capacitance at 0V = 43 pF 6 100 Figure 4. Typical Reverse Recovery Time vs. di/dt 50 0 0.1 10 IF = 8A 200 300 400 di/dt [A/µs] 500 10 5 0 25 600 3 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FFP08S60SN Mechanical Dimensions TO220 2L Dimensions in Millimeters FFP08S60SN Rev. A 4 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ * FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * PDP-SPM™ Power220® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ® tm SupreMOS™ SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 FFP08S60SN Rev. A 5 www.fairchildsemi.com FFP08S60SN TRADEMARKS