FFH75H60S Hyperfast Recovery Power Rectifier tm Features 75A, 600V Hyperfast Rectifier • High Speed Switching ( trr=40ns(Typ.) @ IF=75A ) The FFH75H60S is a hyperfast diode with soft recovery characteristics (trr< 40ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ionimplanted epitaxial planar construction.This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing powerloss in the switching transistors. • High Reverse Voltage and High Reliability • Avalanche Energy Rated • Low Forward Voltage( VF=1.8V(Typ.) @ IF=75A ) Applications • General Purpose • Switching Mode Power Supply • Power switching circuits Pin Assignments 1. Cathode TO-247-2L 2. Anode Absolute Maximum Ratings Symbol 2 2. Anode 1 1. Cathode TC = 25°C unless otherwise noted Parameter Ratings Units VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 75 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 750 A TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C Thermal Characteristics T C Symbol RθJC @ TC = 105°C = 25°C unless otherwise noted Parameter Maximum Thermal Resistance, Junction to Case Max Units 0.4 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FFH75H60S FFH75H60S TO-247-2L - - 30 ©2012 Fairchild Semiconductor Corporation FFH75H60S Rev. C1 1 www.fairchildsemi.com FFH75H60S Hyperfast Recovery Power Rectifier September 2012 C = 25°C unless otherwise noted Parameter 1 Conditions Min. Typ. Max Units IF = 75A IF = 75A TC = 25 °C TC = 125 °C - 1.8 1.6 2.2 2.0 V V IRM1 VR = 600V VR = 600V TC = 25 °C TC = 125 °C - - 100 1.0 μA mA trr IF =75A, di/dt = 200A/μs, VCC = 390V TC = 25 °C TC = 125 °C - 40 85 75 - ns ns ta tb Qrr IF =75A, di/dt = 200A/μs, VCC = 390V TC = 25 °C TC = 25 °C TC = 25 °C - 23 17 80 - ns ns nC WAVL Avalanche Energy (L = 40mH) 20 - - mJ VFM Notes: 1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2% Test Circuit and Waveforms FFH75H60S Rev. C1 2 www.fairchildsemi.com FFH75H60S Hyperfast Recovery Power Rectifier Electrical Characteristics T Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 100 Forward Current, IF [A] 100 Reverse Current , IR [μA] 400 o TC = 125 C o TC = 75 C 10 o TC = 25 C 1 0 1 2 Forward Voltage, VF [V] 150 300 450 Reverse Voltage, VR [V] 600 120 IF = 75A Reverse Recovery Time, trr [ns] Capacitances , Cj [pF] 10 Figure 4. Typical Reverse Recovery Time vs. di/dt 600 400 200 1 10 Reverse Voltage, VR [V] o TC = 125 C 90 o TC = 75 C 60 30 0 100 100 o TC = 25 C 200 300 di/dt [A/μs] 400 500 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 20 175 o TC = 125 C 15 Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] 0.1 0.01 3 Typical Capacitance at 0V = 681 pF o TC = 75 C 10 o TC = 25 C 5 IF = 75A FFH75H60S Rev. C1 o TC = 75 C o 800 0 100 1 TC = 25 C Figure 3.Typical Junction Capacitance 0 0.1 o TC = 125 C 10 200 300 di/dt [A/μs] 400 150 125 100 75 50 25 0 25 500 3 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FFH75H60S Hyperfast Recovery Power Rectifier Typical Performance Characteristics FFH75H60S Hyperfast Recovery Power Rectifier Typical Performance Characteristics (Continued) Figure 7. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 0.01 t1 *Notes: t2 o 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.001 -5 10 FFH75H60S Rev. C1 PDM 0.05 0.02 0.01 Single pulse -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 1 www.fairchildsemi.com FFH75H60S Hyperfast Recovery Power Rectifier Mechanical Dimensions TO-247-2L Dimensions in Millimeters FFH75H60S Rev. C1 5 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FFH75H60S Rev. 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