MITSUBISHI M68731N

MITSUBISHI RF POWER MODULE
M68731N
SILICON MOS FET POWER AMPLIFIER, 142-163MHz, 7W, FM PORTABLE RADIO
Dimensions in mm
OUTLINE DRAWING
BLOCK DIAGRAM
30±0.2
26.6±0.2
2
3
21.2±0.2
2-R1.5±0.1
1
4
5
5
1
2
3
4
0.45
6±1
PIN:
1 Pin : RF INPUT
2 VGG : GATE BIAS SUPPLY
3 VDD : DRAIN BIAS SUPPLY
4 PO : RF OUTPUT
5 GND: FIN
13.7±1
18.8±1
23.9±1
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDD
VGG
Pin
PO
TC (OP)
Tstg
Parameter
Supply voltage
Gate bias voltage
Input power
Output power
Operation case temperature
Strage temperature
Conditions
VGG≤3.5V, ZG=ZL=50Ω
f=142-163MHz, ZG=ZL=50Ω
f=142-163MHz, ZG=ZL=50Ω
f=142-163MHz, ZG=ZL=50Ω
Ratings
9.2
4
70
10
-30 to +100
-40 to +110
Unit
V
V
mW
W
°C
°C
Note. Above parameters are guarateed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol
f
PO
ηT
2fO
ρin
Parameter
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Test conditions
VDD=7.2V,
VGG=3.5V,
Pin=50W
Limits
Min
142
7
45
Max
163
-20
4
Unit
MHz
W
%
dBc
-
-
Stability
ZG=50Ω, VDD=4-9.2V,
Load VSWR<4:1
No parasitic oscillation
-
-
Load VSWR tolerance
VDD=9.2V, Pin=50mW,
PO=7W (VGG adjust), ZL=20:1
No degradation or
destroy
-
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. ´97
MITSUBISHI RF POWER MODULE
M68731N
SILICON MOS FET POWER AMPLIFIER, 142-163MHz, 7W, FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, TOTAL EFFICIENCY
VS. FREQUENCY
10
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
100
9
PO
8
80
7
70
6
10.0
100
ηT
90
PO
60
ηT
5
50
4
40
3
30
2
20
VDD=7.2V
VGG=3.5V
Pin=50mW
1
10
1.0
f=142MHz
VDD=7.2V
Pin=50mW
10
0
0
135 140 145 150 155 160 165 170 175
0.1
0.5
FREQUENCY f (MHz)
1.0
1.5
2.0
2.5
3.0
1
3.5
GATE VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
10.0
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
100
ηT
16
80
14
70
ηT
12
60
10
50
PO
10
1.0
PO
8
40
6
30
4
f=163MHz
VDD=7.2V
Pin=50mW
0.1
0.5
1.0
1.5
2.0
2.5
3.0
20
f=142MHz
VGG=3.5V
Pin=50mW
2
1
3.5
GATE VOLTAGE VGG (V)
0
4
5
6
7
8
10
0
9
SUPPLY VOLTAGE VDD (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
16
80
14
70
ηT
12
60
10
50
8
40
PO
6
30
4
20
f=163MHz
VGG=3.5V
Pin=50mW
2
0
4
5
6
7
8
10
0
9
SUPPLY VOLTAGE VDD (V)
Nov. ´97