MITSUBISHI M68761

MITSUBISHI RF POWER MODULE
M68761
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO
Dimensions in mm
OUTLINE DRAWING
BLOCK DIAGRAM
42
2
3
4
37
30
2-R1.5
1
5
6
PIN:
1 Pin : RF INPUT
2 VDD1 : 1st DRAIN BIAS SUPPLY
3 VGG : GATE BIAS SUPPLY
4 VDD2 : 2nd DRAIN BIAS SUPPLY
5 PO : RF OUTPUT
6 GND: FIN
9.6
14.7
19.7
27.4
32.4
H15
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDD
VGG
Pin
PO
TC (OP)
Tstg
Parameter
Supply voltage
Gate bias voltage
Input power
Output power
Operation case temperature
Storage temperature
Conditions
ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
Ratings
17
4
10
10
-30 to +100
-40 to +100
Unit
V
V
mW
W
°C
°C
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol
f
Parameter
Test conditions
Frequency range
Limits
Min
820
Max
851
PO
Output power
VDD=12.5V, VGG=3.5V, Pin=1mW,
ZG=ZL=50Ω
2fO
ρin
ηT
2nd. harmonic
Input VSWR
Total efficiency
PO=6W(VGG=Adjust), VDD=12.5V,
Pin=1mW(CW), ZG=ZL=50Ω
Stability
ZG=ZL=50Ω, VDD=10-16V,
Load VSWR <4:1
No parasitic oscillation
Load VSWR tolerance
VDD=15.2V, Pin=1mW,
PO=6W (VGG Adjust), ZL=20:1
No degradation or
destroy
6
Unit
MHz
W
-30
4
33
dBc
%
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. ´97
MITSUBISHI RF POWER MODULE
M68761
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
10
50
ηT
9
8
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
100.0
100.0
ηT
40
PO
7
PO
10.0
6
10.0
30
5 VDD1=12.5V
4 VDD2=12.5V
VGG=3.4V
3 Pin=1mW
2 ZG=ZL=50 Ω
20
1.0
ρin
f=820MHz
VDD1=12.5V
VDD2=12.5V
VGG=3.5V
ZG=ZL=50Ω
10
1
0
0
800 810 820 830 840 850 860 870
0.1
0.01
0.10
FREQUENCY f (MHz)
PO
10.0
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
10
f=820MHz
9
VDD1=12.5V
PO
8 VDD2=12.5V
Pin=1mW
7 ZG=ZL=50 Ω
6
5
1.0
f=851MHz
VDD1=12.5V
VDD2=12.5V
VGG=3.5V
ZG=ZL=50Ω
0.1
0.01
0.10
1.0
0.1
10.00
1.00
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
10
f=851MHz
9
VDD1=12.5V
8 VDD2=12.5V
PO
Pin=1mW
7 ZG=ZL=50 Ω
100
90
70
60
5
50
50
ηT
2
20
1
10
0
2.00
0
2.50
3.00
3.50
4.00
2.25
2.75
3.25
3.75
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
14
70
12
60
10
50
30
4
2
20
1
10
0
4.00
ηT
8
3
2.25
2.75
3.25
3.75
GATE SUPPLY VOLTAGE VGG (V)
60
30
6
3.50
70
40
40
3.00
80
3
4
2.50
90
80
6
ηT
100
4
INPUT POWER Pin (mW)
0
2.00
0.1
10.00
1.00
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
100.0
100.0
ηT
10.0
1.0
40
30
PO
f=820MHz
VGG=3.5V
Pin=1mW
ZG=ZL=50Ω
2
0
4
6
8
10
12
14
20
10
0
16
DRAIN SUPPLY VOLTAGE VDD (V)
Nov. ´97
MITSUBISHI RF POWER MODULE
M68761
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
14
70
12
60
10
50
ηT
8
40
6
30
4
PO
f=851MHz
VGG=3.5V
Pin=1mW
ZG=ZL=50Ω
2
0
4
6
8
10
12
14
20
10
0
16
DRAIN SUPPLY VOLTAGE VDD (V)
Nov. ´97