MITSUBISHI MF34M1

MITSUBISHI MEMORY CARD
STATIC RAM CARDS
MF365A-J8CATXX
8/16-bit Data Bus
MF3129-J8CATXX
Static RAM Card
MF3257-J8CATXX
MF3513-J8CATXX
MF31M1-J8CATXX
Connector Type
MF32M1-J8CATXX
Two- piece 68-pin
MF34M1-J8CATXX
1. DESCRIPTION
Mitsubishi’s Static RAM cards provide large memory
capacities on a device approximately the size of a
credit card (85.6mm×54mm×3.3mm). The cards use
a 8/16 bit data-bus.
Available in 64KB, 128KB, 256KB, 512KB,
1 MB, 2 MB and 4 MB capacities, Mitsubishi’s
SRAM cards conform to the PC Card Standard.
Mitsubishi achieved high density memory, while
maintaining credit size by using a thin small outline
packaging technology (TSOP). The TSOP surpasses
conventional memory card chip-on-board packaging
technology where larger, surface-mount devices
result in a tradeoff between card size and optimum
memory density. The TSOP, with external leads
spaced on 20-mil centers, is over four times smaller
than standard equivalent pin count surface-mount
packages. This allows up to 8 memory ICs (plus
interface circuitry) to be mounted in a card that in
only 3.3mm thick.
2. FEATURES
nUses TSOP (Thin Small Outline Package) to
achieve very high memory density coupled with
high reliability, without enlarging card size
nOne to 8 memory ICs can be mounted in a
card that is only 3.3mm thick
nElectrostatic discharge protection to 15kV
nBuffered interface
nWrite protect switch
nAttribute memory
n68pin
nBuilt-in auxiliary battery
3. APPLICATIONS
nOffice automation
nData Communication
nComputers
nIndustrial
nTelecommunications nConsumer
4. PRODUCT LIST
Item
Type name
MF365A-J8CATXX
MF3129-J8CATXX
MF3257-J8CATXX
MF3513-J8CATXX
MF31M1-J8CATXX
MF32M1-J8CATXX
MF34M1-J8CATXX
Memory
capacity
64KB
128KB
256KB
512KB
1MB
2MB
4MB
Data Bus
width(bits)
Attribute
memory
Auxiliary
battery
8/16
8KB
E PROM
YES
2
MITSUBISHI
ELECTRIC
1/16
Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
5. SUMMARY
MF3XXX-J8CATXX series is the Static RAM cards which has 8/16 bit changeable data-bus width.
The card has a replaceable lithium main battery to maintain data in memory and has an auxiliary battery to
maintain data in memory while the main battery is replaced. When the card is not use or the supply voltage
drops, the main battery will automatically maintain data in memory.
6. FUNCTIONAL DESCRIPTION
The function of the card is determined by the combination of the following five control signals,
REG#, CE1#, CE2#, OE#, WE#; active low signals. (Please refer to section 10 FUNCTION TABLE on page 5)
(1))COMMON MEMORY FUNCTION
When REG# signal is high level, the common memory area is selected.
(a))READ MODE
To read, WE# is set high level and CE1# or CE2# is set low level and the memory address is applied at inputs
A0-A21(4MB). Setting OE# low level executes the reading with output at data-bus. It is available to make the
following functions according to the combination of CE1# and CE2#.
When CE1# is set low level and CE2# is set high level, the card operates as an 8 bit data-bus width card.
The data can be dealt with lower data-bus(D0-D7).
When both CE1# and CE2# are set low level, the card operates as a 16 bit data-bus width card.
At this mode LSB of address-bus (A0) is ignored.
In addition odd byte can be accessed through upper data-bus(D8-D15) when CE1# is set high level and CE2# is
set low level. This mode is useful when handling only odd bytes in the 16 bit data-bus interface system (A0 is
ignored).
When both CE1# and CE2# are set high level, the card becomes a standby mode where the card consumes
low power and the data-bus is placed in high impedance state (above functions of CE1# and CE2# are the same
as in the following modes).
When both OE# and WE# are set high level, the card becomes a output disable mode and the data-bus is
placed in high impedance state.
(b))WRITE MODE
To write, the memory address is first applied at inputs A0-A21(4MB) and the data is applied at output pins.
Setting CE1# or CE2# low level, WE# low level and OE# high level executes the writing.
(2))ATTRIBUTE MEMORY FUNCTION
When REG# is set low level, the attribute memory area is selected. MF3XXX-J8CATXX series accommodates
an attribute memory of 8KB E2PROM on even addresses.
(a))READ MODE
First set CE1# and CE2# low level or high level and select residing address (even address). Data can be read by
setting OE# low level and WE# high level.
(b))WRITE MODE
Writing can be done either by byte-mode or page-mode. The page-mode write is the function to be able to write
data of 32 bytes in a single write cycle. The page address is set by A6 to A13 (Please note that attribute memory
exists in even bytes only). To write, set OE# high level and WE# low level. Data will be latched at the rising
edge of WE#. After the first load unless WE# changes from high level to low level within 30µs, the automatic
erase/program starts and completes in 10ms or before. Page data can be latched if WE# transits from high level
to low level before the 30µs. Page-mode write also executes erase/program operation within 10ms.
The page address must be maintained during the page data loading.
(3))BATTERY
When the card is used for long periods of time, eventually battery exhaustion occurs. If such a situation is
encountered, replace any exhausted battery with a new one as directed in section 21.2 ″REPLACING BATTERY″
(page 14).
The replacement battery model number is indicated under section 21 ″BATTERY SPECIFICATIONS″(page 14).
7. WRITE PROTECT MODE
When the write protect switch is switched on, this card goes into a write protect mode that can read but not
write data. In this mode, WP pin becomes “H” level.
At the shipment the write protect switch is switched off (Normal mode : The card can be written ; WP pin
indicates “L” level).
MITSUBISHI
ELECTRIC
2/16
Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
8 . PIN ASSIGNMENTS
Pin
Function
Symbol
No.
1
GND Ground
2
D3
3
D4
4
D5
Data I/O
5
D6
6
D7
7
CE1# Card enable 1
8
A10 Address input
9
OE# Output enable
10
A11
11
A9
12
A8
Address input
13
A13
14
A14
15
WE# Write enable
16
NC
No connection
17
VCC Power supply voltage
18
NC
No connection
19
A16
A16 (NC for 64KB type)
20
A15
21
A12
22
A7
23
A6
24
A5
Address input
25
A4
26
A3
27
A2
28
A1
29
A0
30
D0
31
D1
Data I/O
32
D2
33
WP
Write protect
34
GND Ground
Pin
No.
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Function
Symbol
GND
CD1#
D11
D12
D13
D14
D15
CE2#
NC
NC
NC
A17
A18
A19
A20
A21
VCC
NC
NC
NC
NC
NC
NC
NC
NC
NC
REG#
BVD2
BVD1
D8
D9
D10
CD2#
GND
MITSUBISHI
ELECTRIC
3/16
Ground
Card detect 1
Data I/O
Card enable 2
No connection
A17 (NC for < 128KB types)
A18 (NC for < 256KB types)
A19 (NC for < 512KB types)
A20 (NC for < 1MB type)
A21 (NC for < 2MB type)
Power supply voltage
Address
input
No connection
Attribute memory select
Battery voltage detect 2
Battery voltage detect 1
Data I/O
Card detect 2
Ground
Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
9 . BLOCK DIAGRAM (4MB) (MF34M1-J8CATXX)
A21
A20
A0
ADDRESSDECODER
A19
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
9
CS#
ADDRESSBUS
BUFFERS
COMMON
MEMORY
8
4Mbit SRAM×8
8
19
DATA-BUS
BUFFERS
OE#
WE#
CS#
CE1#
13
CE2#
MODE
CONTROL
LOGIC
WE#
OE#
ATTRIBUTE
MEMORY
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
8
OE# 64Kbit
WE# E2PROM×1
2
REG#
WP#
TO INTERNAL
POWER SUPPLY
WRITE PROTECT
OFF
VCC
VOLTAGE DETECTOR
&
POWER CONTROLLER
ON
Auxiliary
battery
BVD2
BVD1
CR2025
CD1#
CD2#
GND
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ELECTRIC
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Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
10. FUNCTION TABLE
Mode
REG# CE1#
Standby
X
H
Read A (16bit)
H
L
common
Write A (16bit)
H
L
common
H
L
Read B (8bit)
common
H
L
Write B (8bit)
common
Read C (8bit)
common
Write C (8bit)
common
Output disable
Read A (16bit)
attribute
Read B (8bit)
attribute
Read C (8bit)
attribute
Write A (16bit)
attribute
Write B (8bit)
attribute
Write C (8bit)
attribute
CE2#
H
L
OE#
X
L
WE#
X
H
A0
X
X
L
H
L
X
H
L
H
L
I/O (D15~D8)
High-impedance
Odd Byte
Data out
Odd Byte
Data in
High-impedance
H
L
H
H
High-impedance
H
H
H
L
L
H
H
H
L
H
H
L
L
L
H
L
H
X
H
H
L
H
L
X
X
L
X
L
X
L
H
L
H
H
X
X
L
L
H
L
H
L
High-impedance
High-impedance
Odd Byte
Data out
Odd Byte
Data in
High-impedance
Data out
(unknown)
High-impedance
L
L
H
L
H
H
High-impedance
L
H
L
L
H
X
L
L
L
H
L
X
Data out
(unknown)
don’t care
L
L
L
L
L
H
H
H
L
H
H
H
L
L
L
L
H
X
don’t care
don’t care
don’t care
I/O (D7~D0)
Icc
High-impedance
standby
Even Byte
Active
Data out
Even Byte
Active
Data in
Even Byte
Active
Data out
Odd Byte
Active
Data out
Even Byte Data in Active
Odd Byte Data in Active
High-impedance
Active
High-impedance
Active
High-impedance
Even Byte
Data out
Even Byte
Data out
Data out
(unknown)
High-impedance
Active
Active
Active
Active
Active
Even Byte Data in
Active
Even Byte Data in
don’t care
don’t care
Active
Active
Active
Note 1 : H=VIH, L=VIL, X=VIH or VIL
11. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vcc
Supply voltage
VI
Input voltage
VO
Output voltage
Topr1
Operating temperature 1
Topr2
Operating temperature 2
Tstg
Storage temperature
Conditions
With respect to GND
Read, Write Operation
Data retention
Excludes data retention
Ratings
-0.3~6.0
-0.3~VCC+0.3
0~VCC
0~60
0~60
-20~70
12. RECOMMENDED OPERATING CONDITIONS (Ta=0~55°C, unless otherwise noted)
Limits
Parameter
Symbol
Min.
Typ.
Vcc
Vcc Supply voltage
4.75
5.0
GND
System ground
0
VIH
High input voltage
2.4
VIL
Low input voltage
0
MITSUBISHI
ELECTRIC
5/16
Max.
5.25
VCC
0.8
Unit
V
V
V
°C
°C
°C
Unit
V
V
V
V
Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
13. ELECTRICAL CHARACTERISTICS (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Min. Typ. Max.
VOH
High output voltage
IOH= -1.0mA
2.4
VOL
Low output voltage
IOL=2mA
0.4
IIH
High input current
VI=Vcc V
10
IIL
Low input current
VI=0V
CE1#, CE2#, WE#, OE#, REG#
-10
-70
Other inputs
-10
IOZH
High output current
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
10
in off state
VO=Vcc
IOZL
Low output current
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
-10
in off state
VO=0V
Icc 1 • 1
Active supply
CE1#=CE2#=VIL, other inputs
64KB~512KB
170
current 1
=VIH or VIL,Outputs=open
1MB~4MB
230
Icc 1 • 2
Active supply
64KB~512KB
160
CE1#=CE2# ≤ 0.2V, other
current 2
inputs ≤ 0.2V or
1MB~4MB
220
≥ Vcc-0.2V, Outputs=open
Icc 2 • 1
Standby supply
CE1#=CE2#=VIH
64KB~4MB
10
current 1
other inputs=VIH or VIL
(17)
Icc 2 • 2
Standby supply
64KB~512KB
0.45
CE1#=CE2# ≥ Vcc-0.2V
current 2
(7.45)
other inputs ≤ 0.2V or
1MB~4MB
0.65
≥ Vcc-0.2V
(7.65)
VBDET1
Battery detect
Vcc=5V, Ta=25°C
2.27
2.37
2.47
reference voltage
VBDET2
Battery detect
Vcc=5V, Ta=25°C
2.55
2.65
2.75
reference voltage
Note 2 : Currents flowing into the card are taken as positive (unsigned).
3 : Typical values are measured at Vcc=5V, Ta=25°C.
4 : The figure in the parentheses indicates the standby current limits when the built-in auxiliary battery is not fully
Unit
V
V
µA
µA
µA
µA
mA
mA
mA
mA
charged.
14. CAPACITANCE
Symbol
CI
CO
Test conditions
Parameter
Input capacitance
Output Capacitance
Limits
Typ.
Max.
Unit
VI=GND, vi=25mVrms
f=1MHZ, Ta=25°C
30
pF
Vo=GND, vo=25mVrms
f=1MHz, Ta=25°C
20
pF
Min.
Note 5 : These parameters are not 100% tested.
MITSUBISHI
ELECTRIC
6/16
Apr. 1999 Rev. 1.2
V
V
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
15. SWITCHING CHARACTERISTICS
Read Cycle (Ta=0~55°C, VCC=5V±5%, unless otherwise noted)
Symbol
Parameter
Limits
Min.
Max.
150
Unit
tcR
Read cycle time
ns
ta(A)
Address access time
150
ns
ta(CE)
Card enable access time
150
ns
ta(OE)
Output enable access time
75
ns
tdis(CE)
Output disable time (from CE#)
75
ns
tdis(OE)
Output disable time (from OE#)
75
ns
ten(CE)
Output enable time (from CE#)
5
ns
ten(OE)
Output enable time (from OE#)
5
ns
tV(A)
Data valid time (after address change)
0
ns
16. TIMING REQUIREMENTS
Write Cycle (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol
Parameter
Limits
Min.
Max.
Unit
tcW
Write cycle time
150
ns
tw(WE)
Write pulse width
80
ns
tsu(A)
Address set up time
20
ns
tsu(A-WEH)
Address set up time with respect to WE# high
100
ns
tsu(CE-WEH)
Card enable set up time with respect to WE# high
100
ns
t(D-WEH)
Data set up time with respect to WE# high
50
ns
th(D)
Data hold time
20
ns
trec(WE)
Write recovery time
20
ns
tdis(WE)
Output disable time (from WE#)
75
ns
tdis(OE)
Output disable time (from OE#)
75
ns
ten(WE)
Output enable time (from WE#)
5
ns
ten(OE)
Output enable time (from OE#)
5
ns
tsu(OE-WE)
OE# set up time with respect to WE# low
10
ns
th(OE-WE)
OE# hold time with respect to WE# high
10
ns
MITSUBISHI
ELECTRIC
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Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
TIMING DIAGRAM
Read Cycle
An
tcR
VIH
VIL
ta(A)
VIH
CE#
tV(A)
ta(CE)
VIL
ten(CE)
tdis(CE)
VIH
ta(OE)
OE#
VIL
ten(OE)
VOH
Dm
(DOUT) VOL
tdis(OE)
Hi-Z
OUTPUT VALID
WE#=“H” level
REG#=“H” level
Write Cycle (WE# control)
tCW
VIH
An
VIL
VIH
tSU(CE-WEH)
CE#
VIL
tSU(A-WEH)
VIH
OE#
tW(WE)
VIL
tSU(A)
trec(WE)
VIH
WE#
VIL
th(OE-WE)
tSU(OE-WE)
Dm
(DIN)
t(D-WEH)
VIH
Hi-Z
th(D)
DATA INPUT STABLE
VIL
tdis(WE)
tdis(OE)
VOH
Dm
(DOUT) VOL
ten(OE)
Hi-Z
ten(WE)
REG#=“H” level
MITSUBISHI
ELECTRIC
8/16
Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
Write Cycle (CE# control)
tCW
VIH
An
VIL
tSU(A)
trec(WE)
tSU(CE-WEH)
VIH
CE#
VIL
VIH
WE#
VIL
t(D-WEH)
Dm
(DIN)
VIH
Hi-Z
VIL
th(D)
DATA INPUT STABLE
OE#=“H” level
REG#=“H” level
17. SWITCHING CHARACTERISTICS (Attribute)
Read Cycle (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol
Parameter
tcRR
ta(A)R
ta(CE)R
ta(OE)R
tdis(CE)R
tdis(OE)R
ten(CE)R
ten(OE)R
tV(A)R
Read cycle time
Address access time
Card enable access time
Output enable access time
Output disable time (from CE#)
Output disable time (from OE#)
Output enable time (from CE#)
Output enable time (from OE#)
Data valid time after address change
MITSUBISHI
ELECTRIC
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Limits
Min. Max.
300
300
300
150
100
100
5
5
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
18. TIMING REQUIREMENTS (Attribute)
Write Cycle (Ta=0∼55°C, Vcc=5V±5%, unless otherwise noted)
Symbol
Parameter
Address setup time
CE# setup time
CE# hold time
Data setup time
Data hold time
OE# setup time
OE# hold time
Write pulse width
Data latch time
Byte load cycle time
Write cycle time
Output enable time from OE#
Write recovery time
tsu(A)R
tsu(CE)R
th(CE)R
t(D-WEH)R
th(D)R
tsu(OE-WE)R
th(OE-WE)R
tw(WE)R
tDLR
tBLCR
tcWR
ten(OE)R
trec(WE)R
TIMING DIAGRAM (Attribute)
Read Cycle
An
Limits
Min. Max.
30
40
30
120
40
30
40
170
120
0.3
30
10
5
30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
ns
ns
tcRR
VIH
VIL
ta(A)R
tV(A)R
ta(CE)R
VIH
CE#
VIL
ten(CE)R
ta(OE)R
VIH
tdis(CE)R
OE#
VIL
ten(OE)R
VOH
Dm
(DOUT) VOL
Hi-Z
tdis(OE)R
OUTPUT VALID
WE#=“H” level
REG#=“L” level
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ELECTRIC
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Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
BYTE WRITE TIMING CHART
trec(WE)R
VIH
An
VIL
tsu(CE)R
th(CE)R
VIH
CE#
VIL
tsu(A)R
tw(WE)R
VIH
WE#
VIL
tcWR
tsu(OE-WE)R
th(OE-WE)R
VIH
OE#
t(D-WEH)R
VIL
th(D)R
tdis(OE)R
DIN
VIH
Hi-Z
VIL
DOUT
VOH
ten(OE)R
Hi-Z
VOL
REG#=“L” level
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ELECTRIC
11/16
Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
PAGE MODE WRITE TIMING CHART
An=(n>5)
An
(A0~A5)
2h
0h
4h
3Ch
3Eh
CE#
tsu(CE)R
WE#
tsu(A)R
tsu(OE-WE)R
th(CE)R
tw(WE)R
tDLR
tBLCR
th(OE-WE)R
trec(WE)R
OE#
t(D-WEH)R
th(D)R
tcWR
Hi-Z
DIN
tdis(OE)R
DOUT
Hi-Z
REG#=“L” level
Note 6 : Test Conditions
Input pulse levels
: VIL=0.4V, VIH=2.8V
Input pulse rise, fall time : tr=tf=10ns
Reference voltage
Input
: VIL=0.8V, VIH=2.4V
Output
: VOL=0.8V, VOH=2.0V
(ten and tdis are measured when output voltage is ± 500mV from steady state. )
Load
: 100pF + 1 TTL gate
5pF + 1 TTL gate (at ten and tdis measuring)
7:
Indicates the don’t care input
8 : Writing is executed in overlap of CE# and WE# are “L” level. (only for Common Memory)
9 : Don’t apply inverted phase signal externally when Dm pin is in output mode.
10 : CE# is indicated as follows:
Read A/Write A : CE#=CE1#=CE2#
Read B/Write B : CE#=CE1#, CE2#=“H” level
Read C/Write C : CE#=CE2#, CE1#=“H” level
MITSUBISHI
ELECTRIC
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Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
19. ELECTRICAL CHARACTERISTICS
BATTERY BACKUP (Ta=0~55°C, unless otherwise noted)
Symbol
Parameter
Test conditions
VBATT
Vi(CE)
Back-up enable battery voltage
Card enable voltage
Battery back-up supply current
All pins open
2.4V≤VCC≤5.25V
0V≤VCC<2.4V
All pins open,
VBATT=3V,
Ta=25°C
Icc
(Bup)
Battery back-up supply current
Min.
2.6
2.4
Vcc-0.1
All pins open,
VBATT=3V
Limits
Typ.
V
V
Vcc
64KB
128KB
256KB
512KB
1MB
2MB
4MB
64KB
128KB
256KB
512KB
1MB
2MB
4MB
20. TIMING REQUIREMENTS (Ta=0~55°C, unless otherwise noted)
Symbol
Parameter
tpr
tpf
tsu(Vcc)
trec(Vcc)
Min.
0.1
3
20
1000
Power supply rise time
Power supply fall time
Setup time at power on
Recovery time at power off
CARD INSERTION/REMOVAL TIMING DIAGRAM
tpf
VCC
VCC MIN
90%
trec(VCC)
VIH
10%
CE1#,
CE2#
10%
VIH
Vcc+0.1
3
3
3
5
3
5
9
30
30
30
50
30
50
90
Limits
Typ. Max.
300
300
tpr
90%
Unit
Max.
VCC MIN
tsu(VCC)
µA
µA
Unit
ms
ms
ms
ns
VCC
CE1#,
CE2#
21. BATTERY SPECIFICATIONS
Please use the following coin type lithium battery.
Type of main battery; CR2025 or equivalents
21.1 BATTERY LIFE EXPECTANCY
The calculated main battery’s life expectancies are as follows.
Card Type
main battery’s life
(when the card is left continuously)
MF365A-J8CATXX
5.9years
MF3129-J8CATXX
5.9years
MF3257-J8CATXX
5.9years
MF3513-J8CATXX
3.6years
MF31M1-J8CATXX
5.9years
MF32M1-J8CATXX
3.6years
MF34M1-J8CATXX
2.0years
Conditions; Temperature : 25°C Humidity : 60%RH
MITSUBISHI
ELECTRIC
13/16
Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
21.2 REPLACING BATTERY
MF3XXX-J8CATXX series have two batteries inside the card as follows.
Lithium battery; for main battery (replaceable)
Rechargeable battery; for auxiliary battery (not replaceable)
For main battery replacement, perform the following procedure. Performing any other procedures will lose the
data recorded in the IC card.
(1)Have on hand a new main battery that has the same model number as or is equivalent currently installed one.
(2)Insert the IC card into the system and apply power to the IC card so that the auxiliary battery will be charged.
(more than 5 minutes)
(3)While pressing the main battery holder cam release levers inward, slowly withdraw the main battery holder.
(4)With the new main battery set in the battery holder, insert it completely into the IC card.
(5)If the battery holder is incorrectly oriented, it will not smoothly fit into its position or the IC card will bulge.
If such a situation is encountered, properly reorient the battery and battery holder and try again.
(6)Insert the battery holder until it clicks into position.
<NOTICE>
Main battery replacement must be completed quickly (recommended time is within 10 minutes).
If too much time is taken, the recorded data may be lost.
The built-in auxiliary battery cannot be replaced.
22. CONNECTOR
The number of card insertion and removal are as follows.
Office environment
10000 times min. at speed of 10 cycles/min.
Harsh environment
5000 times min. at speed of 10 cycles/min.
23. CARD WEIGHT
about 35g
24. UL CLASS OF MAIN CARD PARTS
(1)MAIN FRAME
(2)PCB
(3)PLASTIC PART OF CONNECTOR
UL94V-0
UL94V-0
UL94V-0
25. THE BATTERY VOLTAGE DETECT SIGNALS (BVD1,2))
BVD1
BVD2
Comment
H
H
Battery operational
H
L
Battery operational, but battery should be replaced
L
L
Battery and data integrity is not kept
Note11. The battery voltage detect signals indicate the present state of the battery.
They do not guarantee the data retention.
26.CONCERNING THE SECURITY OF DATA
There is always the possibility that a soft-error (this malfunction is not permanent hence it is called soft and
the data can be restored by rewriting) may occur with semiconductor products.
When keeping the important data within an IC card, remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as
(1) Keeping multiple copies of the data.
(2) Addition of ECC or CRC by software or hardware.
MITSUBISHI
ELECTRIC
14/16
Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
! Warning ( if card with battery / card with auxiliary battery )
(1)Do not charge, short, disassemble, deform, heat, or throw the batteries into fire, as they may ignite, overheat,
rupture or explode.
(2)Place the batteries out of the reach of children. If somebody swallows them, they should see a doctor
immediately.
(3)When discarding or storing the batteries, wrap them individually with cellophane tape or other nonconductive
material. If they are positioned in contact with any other metals or batteries, they may explode, rupture or
leak electrolyte solution.
! Caution
This product is not designed or manufactured for use in a device or system that is used under circumstances in
which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for a
special applications, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear,
or undersea repeater use.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due consideration to safety when making
your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits,(2)use of
non-flammable material or (3)prevention against any malfunction or mishap.
Notes regarding these materials
lThese materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
l Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any thirdparty’s rights, originating in the use of any product data, diagrams, charts or circuit application examples
contained in these materials.
l All information contained in these materials, including product data, diagrams and charts, represent
information on products at the time of publication of these materials, and are subject to change by Mitsubishi
Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor for the latest product information before purchasing a product listed
herein.
l For instruction on proper use of the IC card, thoroughly read the manual attached to the product before use.
After reading please store the manual in s safe place for future reference.
l The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole
or in part these materials.
l If these products or technologies are subject the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than approved
destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or
the country of destination is prohibited.
l Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product
distributor for further details on these materials or the products contained therein.
MITSUBISHI
ELECTRIC
15/16
Apr. 1999 Rev. 1.2
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
OUTLINE(68P-012)
MITSUBISHI
ELECTRIC
16/16
Apr.1999 Rev.1.2