MITSUBISHI MEMORY CARD STATIC RAM CARDS MF38M1-LCDAGXX MF38M1-LSDAGXX 8/16-bit Data Bus Static RAM Card Connector Type Two- piece 68-pin DESCRIPTION Mitsubishi’s Static RAM cards provide large memory capacities on a device approximately the s i z e o f a c r e d i t c a r d ( 8 5 . 6 m m × 54mm× 5 . 0 m m ) . The cards use an 8/16 bit data bus.The devices use a replaceable lithium battery to maintain data.Available in 8Mbyte capacities, Mitsubishi’s Static RAM cards are available with a 68-pin, two-piece connector. FEATURES nU s e s T S O P ( T h i n S m a l l O u t l i n e P a c k a g e ) t o achieve very high memory density coupled with high reliability, without enlarging card size. nE l e c t r o s t a t i c d i s c h a r g e p r o t e c t i o n t o 1 5 k V nB u f f e r e d i n t e r f a c e n6 8 p i n c o n n e c t o r n8 - b i t a n d 1 6 - b i t d a t a w i d t h nW r i t e p r o t e c t s w i t c h nB a t t e r y v o l t a g e p i n nL S T y p e W i d e R a n g e o p e r a t i n g t e m p e r a t u r e (Ta= -20 to 70°C) APPLICATIONS nO f f i c e a u t o m a t i o n nD a t a C o m m u n i c a t i o n nC o m p u t e r s nI n d u s t r i a l nT e l e c o m m u n i c a t i o n s nC o n s u m e r PRODUCT LIST Item Type name Memory Data Bus Attribute Auxialiary Memory Outline capacity width(bits) memory battery organization drawing Main battery holder MF38M1-LCDAGXX 8MB 8/16 NO NO 4M bit SRAM× 16 68P-010 Screw type MF38M1-LSDAGXX 8MB 8/16 NO NO 4M bit SRAM× 16 68P-010 Screw type MITSUBISHI ELECTRIC 1/9 MITSUBISHI MEMORY CARD STATIC RAM CARDS PIN ASSIGNMENT Two-Piece Type (68-pin) Pin Pin Function Symbol No. Function Symbol No. 35 36 GND CD1# 37 D11 38 D12 D6 39 D13 6 D7 40 D14 7 CE1# Card enable 1 41 D15 8 A10 Address input 42 CE2# 9 OE# Output enable 43 NC 10 A11 44 NC 11 A9 45 NC 1 2 GND D3 3 D4 4 D5 5 Ground Data I/O 12 A8 46 A17 13 A13 47 A18 14 A14 48 A19 15 WE# Write enable 49 A20 Address input Ground Card detect 1 Data I/O Card enable 2 No connection Address input 16 NC No connection 50 A21 17 VC C Power supply voltage 51 VC C Power supply voltage 18 NC No connection 52 NC No connection 19 A16 53 A22 Address input 20 A15 54 NC 21 A12 55 NC 22 A7 56 NC 23 A6 57 NC 24 A5 58 NC 25 A4 59 NC 26 A3 60 NC 27 A2 61 REG# 28 A1 62 BVD2 Battery voltage detect 2 29 A0 63 BVD1 Battery voltage detect 1 30 D0 64 D8 31 D1 32 D2 33 WP 34 GND Address input No connection REG function 65 D9 66 D10 Write protect 67 CD2# Card detect 2 Ground 68 GND Ground Data I/O WRITE PROTECT MODE (WP) When the write protect switch is switched on, this card goes into a write protect mode that can read but not write data. In this mode, WP pin becomes “H” level. At the shipment the write protect switch is switched off (Normal mode : The card can be written ; WP pin indicates “L” level). MITSUBISHI ELECTRIC 2/9 Data I/O MITSUBISHI MEMORY CARD STATIC RAM CARDS BLOCK DIAGRAM (8MB) A22 A21 A20 A0 ADDRESSDECODER A19 A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 16 CS# ADDRESSBUS BUFFERS COMMON MEMORY 19 16 DATA-BUS BUFFERS 4Mbit SRAM×16 OE# WE# D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 CE1# CE2# MODE CONTROL LOGIC WE# OE# REG# WP# TO INTERNAL POWER SUPPLY WRITE ROTECT OFF VOLTAGE DETECTOR & POWER CONTROLLER ON CD1# CD2# VCC BVD2 BVD1 GND BR2325 FUNCTION TABLE Mode I/O (D15~D8) I/O (D7~D0) ICC REG# CE1# CE2# OE# WE# A0 Standby X H H X X X High-impedance High-impedance Standby Read A (16bit) common H L L L H X Odd Byte Data out Even Byte Data out Active Write A (16bit) common H L L H L X Odd Byte Data in Even Byte Data in Active Read B (8bit) common H L H L H L High-impedance Even Byte Data out Active H L H L H H High-impedance Odd Byte Data out Active Write B (8bit) common H L H H L L High-impedance Even Byte Data in Active H L H H L H High-impedance Odd Byte Data in Active Read C (8bit) common H H L L H X Odd Byte Data out High-impedance Active Write C (8bit) common H H L H L X Odd Byte Data in High-impedance Active Output disable X X X H H X High-impedance High-impedance Active Read A (16bit) attribute L L L L H X Data out (unknown) Data out (FFh) Active Read B (8bit) attribute L L H L H L High-impedance Data out (FFh) Active L L H L H H High-impedance Data out (unknown) Active L H L L H X Data out (unknown) High-impedance Active Read C (8bit) attribute Note 1 : H=V I H , L=V I L , X=V I H or V I L MITSUBISHI ELECTRIC 3/9 MITSUBISHI MEMORY CARD STATIC RAM CARDS ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCC Supply voltage Vi Input voltage Vo Output voltage Topr1 Operating temperature 1 Topr2 Operating temperature 2 Tstg Storage temperature Conditions With respect to GND Read, Write, Operation Data retention Ratings -0.3~6.0 -0.3~VCC+0.3 0~VCC LC series 0~70 LS series -20~70 LC series 0~70 LS series -20~70 -30~80 Unit V V V °C °C °C °C °C RECOMMENDED OPERATING CONDITIONS (LC series Ta= 0~55°C, unless otherwise noted) (LS series Ta=-20~70°C, unless otherwise noted) Limits Parameter Symbol Unit Min. Typ. Max. VCC V C C supply voltage 4.50 5.0 5.25 V GND System ground 0 V VIH High input voltage 3.5 VCC V VIL Low input voltage 0 0.8 V ELECTRICAL CHARACTERISTICS ( L C s e r i e s T a = 0 ~ 5 5 ° C , V C C = 4 . 5 0 ~ 5 . 2 5 V , u n l e s s o t h e r w i s e n o t e d ) (LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted) Symbol Test conditions Parameter VOH VOL IIH IIL High output voltage Low output voltage High input current IOH=-1.0mA, Other outputs IOL=2mA VI=VC C V Low input current V I =0V IOZH High output current IOZL in off state Low output current ICC 1 • 1 ICC 1 • 2 in off state Active supply current 1 ICC 2 • 1 Active supply current 2 Standby supply current 1 ICC 2 • 2 Standby supply current 2 VBDET1 Battery detect reference voltage 1¬ Battery detect reference voltage 2¬ VBDET2 Min. 2.4 CE1#, CE2#, WE#, OE#, REG# Other inputs Limits Typ. Max. -10 CE1#=CE2#=VIH or OE#=VIH WE#=VIH, VO=VC C CE1#=CE2#=VIH or OE#=VIH WE#=VIH, VO=0V CE#=VIL, other inputs VIH or VIL,Outputs=open CE# ≤ 0.2V, other inputs ≤ 0.2V or ≥ VCC-0.2V, Outputs=open 16bit 8bit 16bit 8bit CE1#=CE2#=VIH other inputs=VIH or VIL C E 1 # = C E 2 # ≥ VC C -0.2V other inputs ≤ 0.2V or ≥ VC C -0.2V V c c = 5 V , T a = 2 5 °C V c c = 5 V , T a = 2 5 °C Note 2 : Currents flowing into the IC are taken as positive (unsigned). 3 : Typical values are measured at VCC=5V, Ta=25°C. ¬ Pin asserted when battery voltage drops below specified level. MITSUBISHI ELECTRIC 4/9 Unit 0.4 10 -70 V V µA µA -10 10 µA -10 µA 280 200 mA 270 190 10 mA mA 1 mA 2.27 2.37 2.47 2.55 2.65 2.75 V V MITSUBISHI MEMORY CARD STATIC RAM CARDS CAPACITANCE Symbol Parameter CI Input capacitance Limits Test conditions Min. Typ. Max. Unit 30 pF 20 pF V I =GND, V I = 2 5 m V r m s f=1 MH Z , T a = 2 5 ° C CO O u t p u t c a p a c i t a n c e V O =GND, V O =25mVrms f=1 MH Z , Ta=25°C Note 4 : These parameters are not 100% tested. SWITCHING CHARACTERISTICS Read Cycle (LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted) (LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted) Limits Min. Typ. Symbol Parameter Max. 200 Unit tCR Read cycle time t a (A) Address access time 200 ns ns t a(CE) Card enable access time 200 ns t a(OE) Output enable accese time 100 ns tdis(CE) Output disable time (from CE#) 90 ns tdis(OE) Output disable time (from OE#) 90 ns ten(CE) Output enable time (from CE#) 5 ns ten(OE) Output enable time (from OE#) 5 ns t V (A) Data valid time (after address change) 0 ns TIMING REQUIREMENTS Write Cycle(LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted) (LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted) Symbol Parameter Min. Limits Typ. Max. Unit tCW Write cycle time 200 ns tw(WE) Write pulse width 120 ns tsu(A) Address set up time 20 ns tsu(A-WEH) Address set up time with respect to WE# high 140 ns tsu(CE-WEH) Card enable set up time with respect to WE# high 140 ns tsu(D-WEH) Data set up time with respect to WE# high 60 ns th(D) Data hold time 30 ns trec(WE) Write recovery time 30 ns tdis(WE) Output disable time (from WE#) 90 ns tdis(OE) Output disable time (from OE#) 90 ns ten(WE) Output enable time (from WE#) ten(OE) Output enable time (from OE#) tsu(OE-WE) OE# set up time with respect to WE# low th(OE-WE) OE# hold time with respect to WE# high 10 ns MITSUBISHI ELECTRIC 5/9 5 ns 5 ns 10 ns MITSUBISHI MEMORY CARD STATIC RAM CARDS TIMING DIAGRAM Read Cycle An tCR VIH VIL ta(A) ta(CE) VIH tV(A) CE# VIL tdis(CE) ten(CE) VIH ta(OE) OE# VIL tdis(OE) ten(OE) VOH Dm (DOUT) VOL Hi-Z OUTPUT VALID WE#=“H” level REG#=“H” level Note 5 : Indicates the don’t care input Write Cycle (WE# control) tCW VIH An VIL tSU(CE-WEH) VIH CE# VIL tSU(A-WEH) VIH OE# VIL tW(WE) tSU(A) trec(WE) VIH WE# VIL tSU(OE-WE) Dm (DIN) VIH Hi-Z th(OE-WE) DATA INPUT STABLE VIL tdis(OE) VOH Dm (DOUT) VOL th(D) tSU(D-WEH) tdis(WE) Hi-Z REG#=“H” level MITSUBISHI ELECTRIC 6/9 ten(OE) ten(WE) MITSUBISHI MEMORY CARD STATIC RAM CARDS Write Cycle (CE# control) tCW VIH An VIL tSU(CE-WEH) tSU(A) trec(WE) VIH CE# VIL VIH WE# VIL tSU(D-WEH) Dm (DIN) VIH Hi-Z th(D) DATA INPUT STABLE VIL OE#=“ H ” l e v e l REG#=“H” level SWITCHING CHARACTERISTICS (Attribute) Read Cycle (LC series:Ta=0~55°C, VCC=4.50~5.25V, unless otherwise noted) (LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted) Limits Symbol tCRR ta(A)R ta(CE)R ta(OE)R tdis(CE)R tdis(OE)R ten(CE)R ten(OE)R tV(A)R Parameter Read cycle time Address access time Card enable access time Output enable access time Output disable time (from CE#) Output disable time (from OE#) Output enable time (from CE#) Output enable time (from OE#) Data valid time after address change MITSUBISHI ELECTRIC 7/9 Min. Typ. Max. 300 300 300 150 100 100 5 5 0 Unit ns ns ns ns ns ns ns ns ns MITSUBISHI MEMORY CARD STATIC RAM CARDS TIMING DIAGRAM (Attribute) Read Cycle An tCRR VIH VIL ta(A)R ta(CE)R VIH tV(A)R CE# VIL tdis(CE)R ten(CE)R ta(OE)R VIH OE# VIL ten(OE)R VOH Dm (DOUT) VOL Hi-Z tdis(OE)R OUTPUT VALID WE#=“H” level REG#=“L” level Note 6 : Test Conditions Input pulse levels : VIL=0.4V, VIH= 4 . 0 V Input pulse rise, fall time : tr=tf=10ns Reference voltage Input : VIL=0.8V, VIH= 3 . 5 V Output : VOL=0.8V, VOH=3.0V (ten and tdis are measured when output voltage is± 500mV from steady state. ) Load : 100pF+1 TTL gate 5pF+1 TTL gate (at ten and tdis measuring) 7 : Writing is executed in overlap of CE# and WE# are “L” level. (only for Common Memory) 8 : Don’t apply inverted phase signal externally when Dm pin is in output mode. 9 : CE# is indicated as follows: Read A/Write A : CE#=CE1#=CE2# Read B/Write B : CE#=CE1#, CE2#=“H” level Read C/Write C : CE#=CE2#, CE1#=“H” level MITSUBISHI ELECTRIC 8/9 MITSUBISHI MEMORY CARD STATIC RAM CARDS ELECTRICAL CHARACTERISTICS BATTERY BACKUP (LC series Ta= 0~55°C, unless otherwise noted) (LS series Ta=-20~70°C, unless otherwise noted) Symbol VBATT VI(CE) Parameter Back-up enable battery voltage Card enable voltage ICC(BUP) Battery back-up supply current ICC(BUP) Battery back-up supply current Test Conditions All pins open 2.4V≤VC C ≤5.25V 0V≤VC C <2.4V All pins open, VBATT=3V, Ta=25°C All pins open, VBATT=3V Min. 2.6 2.4 VC C -0.1 Limits Typ. Max. VC C VCC+0.1 Unit V V 17 µA 400 µA TIMING REQUIREMENTS (LC series Ta= 0~55°C, unless otherwise noted) (LS series Ta=-20~70°C, unless otherwise noted) Limits Symbol tpr tpf tsu(VCC) trec(VCC) Parameter Min. Power supply rise time Power supply fall time Setup time at power on Recovery time at power off Typ. 0.1 3 20 1000 Max. 300 300 Unit ms ms ms ns CARD INSERTION/REMOVAL TIMING DIAGRAM VC C MIN means Minimum Operating Voltage=4.50V. VCC VCC MIN trec(VCC) CE1#, CE2# tpf 90% tpr VCC 90% VIH VIH 10% VCC MIN tsu(VCC) 10% Note 10: When the card is holding valuable data, the battery must not be removed unless VCC is present. BATTERY SPECIFICATIONS A replaceable battery (type BR2325) with a capacity of 165mAH is used: Estimated battery life when the card is left continuously. MF38M1-LC/LSDAGXX Conditions Temperature : 25°C Humidity : 60%RH 1.0years MITSUBISHI ELECTRIC 9/9 CE1, CE2