MITSUBISHI MF38M1

MITSUBISHI MEMORY CARD
STATIC RAM CARDS
MF38M1-LCDAGXX
MF38M1-LSDAGXX
8/16-bit Data Bus
Static RAM Card
Connector Type
Two- piece 68-pin
DESCRIPTION
Mitsubishi’s Static RAM cards provide large
memory capacities on a device approximately the
s i z e o f a c r e d i t c a r d ( 8 5 . 6 m m × 54mm× 5 . 0 m m ) .
The cards use an 8/16 bit data bus.The devices
use a replaceable lithium battery to maintain
data.Available in 8Mbyte capacities,
Mitsubishi’s Static RAM cards are available
with a 68-pin, two-piece connector.
FEATURES
nU s e s T S O P ( T h i n S m a l l O u t l i n e P a c k a g e ) t o
achieve very high memory density coupled
with high reliability, without enlarging card
size.
nE l e c t r o s t a t i c d i s c h a r g e p r o t e c t i o n t o 1 5 k V
nB u f f e r e d i n t e r f a c e
n6 8 p i n c o n n e c t o r
n8 - b i t a n d 1 6 - b i t d a t a w i d t h
nW r i t e p r o t e c t s w i t c h
nB a t t e r y v o l t a g e p i n
nL S T y p e W i d e R a n g e o p e r a t i n g t e m p e r a t u r e
(Ta= -20 to 70°C)
APPLICATIONS
nO f f i c e a u t o m a t i o n
nD a t a C o m m u n i c a t i o n
nC o m p u t e r s
nI n d u s t r i a l
nT e l e c o m m u n i c a t i o n s
nC o n s u m e r
PRODUCT LIST
Item
Type name
Memory
Data Bus
Attribute
Auxialiary
Memory
Outline
capacity
width(bits)
memory
battery
organization
drawing
Main battery
holder
MF38M1-LCDAGXX
8MB
8/16
NO
NO
4M bit SRAM× 16
68P-010
Screw type
MF38M1-LSDAGXX
8MB
8/16
NO
NO
4M bit SRAM× 16
68P-010
Screw type
MITSUBISHI
ELECTRIC
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MITSUBISHI MEMORY CARD
STATIC RAM CARDS
PIN ASSIGNMENT
Two-Piece Type (68-pin)
Pin
Pin
Function
Symbol
No.
Function
Symbol
No.
35
36
GND
CD1#
37
D11
38
D12
D6
39
D13
6
D7
40
D14
7
CE1#
Card enable 1
41
D15
8
A10
Address input
42
CE2#
9
OE#
Output enable
43
NC
10
A11
44
NC
11
A9
45
NC
1
2
GND
D3
3
D4
4
D5
5
Ground
Data I/O
12
A8
46
A17
13
A13
47
A18
14
A14
48
A19
15
WE#
Write enable
49
A20
Address input
Ground
Card detect 1
Data I/O
Card enable 2
No connection
Address input
16
NC
No connection
50
A21
17
VC C
Power supply voltage
51
VC C
Power supply voltage
18
NC
No connection
52
NC
No connection
19
A16
53
A22
Address input
20
A15
54
NC
21
A12
55
NC
22
A7
56
NC
23
A6
57
NC
24
A5
58
NC
25
A4
59
NC
26
A3
60
NC
27
A2
61
REG#
28
A1
62
BVD2
Battery voltage detect 2
29
A0
63
BVD1
Battery voltage detect 1
30
D0
64
D8
31
D1
32
D2
33
WP
34
GND
Address input
No connection
REG function
65
D9
66
D10
Write protect
67
CD2#
Card detect 2
Ground
68
GND
Ground
Data I/O
WRITE PROTECT MODE (WP)
When the write protect switch is switched on, this
card goes into a write protect mode that can read
but not write data.
In this mode, WP pin becomes “H” level.
At the shipment the write protect switch is switched
off (Normal mode : The card can be written ; WP pin
indicates “L” level).
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ELECTRIC
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Data I/O
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
BLOCK DIAGRAM (8MB)
A22
A21
A20
A0
ADDRESSDECODER
A19
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
16
CS#
ADDRESSBUS
BUFFERS
COMMON
MEMORY
19
16
DATA-BUS
BUFFERS
4Mbit SRAM×16
OE#
WE#
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
CE1#
CE2#
MODE
CONTROL
LOGIC
WE#
OE#
REG#
WP#
TO INTERNAL
POWER SUPPLY
WRITE ROTECT
OFF
VOLTAGE DETECTOR
&
POWER CONTROLLER
ON
CD1#
CD2#
VCC
BVD2
BVD1
GND
BR2325
FUNCTION TABLE
Mode
I/O (D15~D8)
I/O (D7~D0)
ICC
REG#
CE1#
CE2#
OE#
WE#
A0
Standby
X
H
H
X
X
X
High-impedance
High-impedance
Standby
Read A (16bit) common
H
L
L
L
H
X
Odd Byte Data out
Even Byte Data out
Active
Write A (16bit) common
H
L
L
H
L
X
Odd Byte Data in
Even Byte Data in
Active
Read B (8bit) common
H
L
H
L
H
L
High-impedance
Even Byte Data out
Active
H
L
H
L
H
H
High-impedance
Odd Byte Data out
Active
Write B (8bit) common
H
L
H
H
L
L
High-impedance
Even Byte Data in
Active
H
L
H
H
L
H
High-impedance
Odd Byte Data in
Active
Read C (8bit) common
H
H
L
L
H
X
Odd Byte Data out
High-impedance
Active
Write C (8bit) common
H
H
L
H
L
X
Odd Byte Data in
High-impedance
Active
Output disable
X
X
X
H
H
X
High-impedance
High-impedance
Active
Read A (16bit) attribute
L
L
L
L
H
X
Data out (unknown)
Data out (FFh)
Active
Read B (8bit) attribute
L
L
H
L
H
L
High-impedance
Data out (FFh)
Active
L
L
H
L
H
H
High-impedance
Data out (unknown)
Active
L
H
L
L
H
X
Data out (unknown)
High-impedance
Active
Read C (8bit) attribute
Note 1 : H=V I H , L=V I L , X=V I H or V I L
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ELECTRIC
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MITSUBISHI MEMORY CARD
STATIC RAM CARDS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCC
Supply voltage
Vi
Input voltage
Vo
Output voltage
Topr1
Operating temperature 1
Topr2
Operating temperature 2
Tstg
Storage temperature
Conditions
With respect to GND
Read, Write, Operation
Data retention
Ratings
-0.3~6.0
-0.3~VCC+0.3
0~VCC
LC series 0~70
LS series -20~70
LC series 0~70
LS series -20~70
-30~80
Unit
V
V
V
°C
°C
°C
°C
°C
RECOMMENDED OPERATING CONDITIONS (LC series Ta= 0~55°C, unless otherwise noted)
(LS series Ta=-20~70°C, unless otherwise noted)
Limits
Parameter
Symbol
Unit
Min.
Typ.
Max.
VCC
V C C supply voltage
4.50
5.0
5.25
V
GND
System ground
0
V
VIH
High input voltage
3.5
VCC
V
VIL
Low input voltage
0
0.8
V
ELECTRICAL CHARACTERISTICS ( L C s e r i e s T a = 0 ~ 5 5 ° C , V C C = 4 . 5 0 ~ 5 . 2 5 V , u n l e s s o t h e r w i s e n o t e d )
(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)
Symbol
Test conditions
Parameter
VOH
VOL
IIH
IIL
High output voltage
Low output voltage
High input current
IOH=-1.0mA, Other outputs
IOL=2mA
VI=VC C V
Low input current
V I =0V
IOZH
High output current
IOZL
in off state
Low output current
ICC 1 • 1
ICC 1 • 2
in off state
Active supply
current 1
ICC 2 • 1
Active supply
current 2
Standby supply current 1
ICC 2 • 2
Standby supply current 2
VBDET1
Battery detect
reference voltage 1¬
Battery detect
reference voltage 2¬
VBDET2
Min.
2.4
CE1#, CE2#, WE#, OE#, REG#
Other inputs
Limits
Typ.
Max.
-10
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
VO=VC C
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
VO=0V
CE#=VIL, other inputs VIH or
VIL,Outputs=open
CE# ≤ 0.2V, other inputs ≤
0.2V or ≥ VCC-0.2V, Outputs=open
16bit
8bit
16bit
8bit
CE1#=CE2#=VIH
other inputs=VIH or VIL
C E 1 # = C E 2 # ≥ VC C -0.2V
other inputs ≤ 0.2V or ≥ VC C -0.2V
V c c = 5 V , T a = 2 5 °C
V c c = 5 V , T a = 2 5 °C
Note 2 : Currents flowing into the IC are taken as positive (unsigned).
3 : Typical values are measured at VCC=5V, Ta=25°C.
¬
Pin asserted when battery voltage drops below specified level.
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ELECTRIC
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Unit
0.4
10
-70
V
V
µA
µA
-10
10
µA
-10
µA
280
200
mA
270
190
10
mA
mA
1
mA
2.27
2.37
2.47
2.55
2.65
2.75
V
V
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
CAPACITANCE
Symbol
Parameter
CI
Input capacitance
Limits
Test conditions
Min.
Typ.
Max.
Unit
30
pF
20
pF
V I =GND, V I = 2 5 m V r m s
f=1 MH Z , T a = 2 5 ° C
CO
O u t p u t c a p a c i t a n c e V O =GND, V O =25mVrms f=1 MH Z ,
Ta=25°C
Note 4 : These parameters are not 100% tested.
SWITCHING CHARACTERISTICS
Read Cycle (LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted)
(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)
Limits
Min.
Typ.
Symbol
Parameter
Max.
200
Unit
tCR
Read cycle time
t a (A)
Address access time
200
ns
ns
t a(CE)
Card enable access time
200
ns
t a(OE)
Output enable accese time
100
ns
tdis(CE)
Output disable time (from CE#)
90
ns
tdis(OE)
Output disable time (from OE#)
90
ns
ten(CE)
Output enable time (from CE#)
5
ns
ten(OE)
Output enable time (from OE#)
5
ns
t V (A)
Data valid time (after address change)
0
ns
TIMING REQUIREMENTS
Write Cycle(LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted)
(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)
Symbol
Parameter
Min.
Limits
Typ.
Max.
Unit
tCW
Write cycle time
200
ns
tw(WE)
Write pulse width
120
ns
tsu(A)
Address set up time
20
ns
tsu(A-WEH)
Address set up time with respect to WE# high
140
ns
tsu(CE-WEH)
Card enable set up time with respect to WE# high
140
ns
tsu(D-WEH)
Data set up time with respect to WE# high
60
ns
th(D)
Data hold time
30
ns
trec(WE)
Write recovery time
30
ns
tdis(WE)
Output disable time (from WE#)
90
ns
tdis(OE)
Output disable time (from OE#)
90
ns
ten(WE)
Output enable time (from WE#)
ten(OE)
Output enable time (from OE#)
tsu(OE-WE)
OE# set up time with respect to WE# low
th(OE-WE)
OE# hold time with respect to WE# high
10
ns
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ELECTRIC
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5
ns
5
ns
10
ns
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
TIMING DIAGRAM
Read Cycle
An
tCR
VIH
VIL
ta(A)
ta(CE)
VIH
tV(A)
CE#
VIL
tdis(CE)
ten(CE)
VIH
ta(OE)
OE#
VIL
tdis(OE)
ten(OE)
VOH
Dm
(DOUT) VOL
Hi-Z
OUTPUT VALID
WE#=“H” level
REG#=“H” level
Note 5 :
Indicates the don’t care input
Write Cycle (WE# control)
tCW
VIH
An
VIL
tSU(CE-WEH)
VIH
CE#
VIL
tSU(A-WEH)
VIH
OE#
VIL
tW(WE)
tSU(A)
trec(WE)
VIH
WE#
VIL
tSU(OE-WE)
Dm
(DIN)
VIH
Hi-Z
th(OE-WE)
DATA INPUT STABLE
VIL
tdis(OE)
VOH
Dm
(DOUT) VOL
th(D)
tSU(D-WEH)
tdis(WE)
Hi-Z
REG#=“H” level
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ELECTRIC
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ten(OE)
ten(WE)
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
Write Cycle (CE# control)
tCW
VIH
An
VIL
tSU(CE-WEH)
tSU(A)
trec(WE)
VIH
CE#
VIL
VIH
WE#
VIL
tSU(D-WEH)
Dm
(DIN)
VIH
Hi-Z
th(D)
DATA INPUT STABLE
VIL
OE#=“ H ” l e v e l
REG#=“H” level
SWITCHING CHARACTERISTICS (Attribute)
Read Cycle (LC series:Ta=0~55°C, VCC=4.50~5.25V, unless otherwise noted)
(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)
Limits
Symbol
tCRR
ta(A)R
ta(CE)R
ta(OE)R
tdis(CE)R
tdis(OE)R
ten(CE)R
ten(OE)R
tV(A)R
Parameter
Read cycle time
Address access time
Card enable access time
Output enable access time
Output disable time (from CE#)
Output disable time (from OE#)
Output enable time (from CE#)
Output enable time (from OE#)
Data valid time after address change
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Min.
Typ.
Max.
300
300
300
150
100
100
5
5
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
TIMING DIAGRAM (Attribute)
Read Cycle
An
tCRR
VIH
VIL
ta(A)R
ta(CE)R
VIH
tV(A)R
CE#
VIL
tdis(CE)R
ten(CE)R
ta(OE)R
VIH
OE#
VIL
ten(OE)R
VOH
Dm
(DOUT) VOL
Hi-Z
tdis(OE)R
OUTPUT VALID
WE#=“H” level
REG#=“L” level
Note 6 : Test Conditions
Input pulse levels : VIL=0.4V, VIH= 4 . 0 V
Input pulse rise, fall time : tr=tf=10ns
Reference voltage
Input :
VIL=0.8V, VIH= 3 . 5 V
Output : VOL=0.8V, VOH=3.0V
(ten and tdis are measured when output voltage is± 500mV from steady state. )
Load :
100pF+1 TTL gate
5pF+1 TTL gate (at ten and tdis measuring)
7 : Writing is executed in overlap of CE# and WE# are “L” level. (only for Common Memory)
8 : Don’t apply inverted phase signal externally when Dm pin is in output mode.
9 : CE# is indicated as follows:
Read A/Write A : CE#=CE1#=CE2#
Read B/Write B : CE#=CE1#, CE2#=“H” level
Read C/Write C : CE#=CE2#, CE1#=“H” level
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ELECTRIC
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MITSUBISHI MEMORY CARD
STATIC RAM CARDS
ELECTRICAL CHARACTERISTICS
BATTERY BACKUP (LC series Ta= 0~55°C, unless otherwise noted)
(LS series Ta=-20~70°C, unless otherwise noted)
Symbol
VBATT
VI(CE)
Parameter
Back-up enable battery voltage
Card enable voltage
ICC(BUP)
Battery back-up supply current
ICC(BUP)
Battery back-up supply current
Test Conditions
All pins open
2.4V≤VC C ≤5.25V
0V≤VC C <2.4V
All pins open,
VBATT=3V,
Ta=25°C
All pins open,
VBATT=3V
Min.
2.6
2.4
VC C -0.1
Limits
Typ.
Max.
VC C
VCC+0.1
Unit
V
V
17
µA
400
µA
TIMING REQUIREMENTS (LC series Ta= 0~55°C, unless otherwise noted)
(LS series Ta=-20~70°C, unless otherwise noted)
Limits
Symbol
tpr
tpf
tsu(VCC)
trec(VCC)
Parameter
Min.
Power supply rise time
Power supply fall time
Setup time at power on
Recovery time at power off
Typ.
0.1
3
20
1000
Max.
300
300
Unit
ms
ms
ms
ns
CARD INSERTION/REMOVAL TIMING DIAGRAM
VC C MIN means Minimum Operating Voltage=4.50V.
VCC
VCC MIN
trec(VCC)
CE1#,
CE2#
tpf
90%
tpr
VCC
90%
VIH
VIH
10%
VCC MIN
tsu(VCC)
10%
Note 10: When the card is holding valuable data, the battery must not be removed unless VCC is
present.
BATTERY SPECIFICATIONS
A replaceable battery (type BR2325) with a capacity of 165mAH is used:
Estimated battery life when the card is left continuously.
MF38M1-LC/LSDAGXX
Conditions
Temperature : 25°C
Humidity :
60%RH
1.0years
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ELECTRIC
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CE1,
CE2