MITSUBISHI MF88M1

MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
MF82M1-GMCAVXX
8/16-bit Data Bus
MF84M1-GMCAVXX
MF88M1-GMCAVXX
Flash Memory Card
MF816M-GMCAVXX
MF820M-GMCAVXX
MF832M-GMCAVXX
Connector Type
MF82M1-GNCAVXX
MF84M1-GNCAVXX
Two- piece 68-pin
MF88M1-GNCAVXX
MF816M-GNCAVXX
MF820M-GNCAVXX
MF832M-GNCAVXX
DESCRIPTION
The MF8XXX-GMCAVXX is a flash memory card
which uses eight-megabit or sixteen megabit flash
electrically erasable and programmable read only
memory IC ’ s as common memory and a 64-kilobit
electrically erasable and programmable read only
m e m o r y a s a t t r i b u t e m e m o r y.
The MF8XXX-GNCAVXX is a flash memory card
which uses eight-megabit or sixteen megabit flash
electrically erasable and programmable read only
memory IC ’ s .
FEATURES
68 pin JEIDA/PCMCIA
8/16 controllable data bus width
Buffered interface
TTL interface level
Program/erase operation by software
command control
100,000 program/erase cycles
Write protect switch
O p e r a t i n g t e m p e r a t u r e = 0 t o 7 0 °C
.No V p p r e q u i r e d ( 5 V Vcc only operation)
A P P L I C A T I O NS
Notebook computers Printers
Industrial machines
PRODUCT LIST
Item
Type name
MF82M1-GMCAVXX
MF84M1-GMCAVXX
MF88M1-GMCAVXX
MF816M-GMCAVXX
MF820M-GMCAVXX
MF832M-GMCAVXX
MF82M1-GNCAVXX
MF84M1-GNCAVXX
MF88M1-GNCAVXX
MF816M-GNCAVXX
MF820M-GNCAVXX
MF832M-GNCAVXX
Memory
capacity
2MB
4MB
8MB
16MB
20MB
32MB
2MB
4MB
8MB
16MB
20MB
32MB
Attribute
memory
Data bus
width(bits)
Access
time (ns)
Memory
IC’ s
8Mbit
Outline
drawing
Yes
16Mbit
8/16
150
68P-013
8Mbit
No( F F h )
16Mbit
MITSUBISHI
ELECTRIC
1/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
PIN ASSIGNMENT
Pin
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Symbol
Pin
Symbol
No.
35
GND
36
CD1#
37
D11
38
D12
39
D13
40
D14
41
D15
42
CE2#
43
NC
44
NC
45
NC
46
A17
47
A18
48
A19
49
A20
50
A21
51
VC C
52
NC
53
A22
54
A23
55
A24
56
NC
57
NC
58
NC
59
NC
60
NC
61
REG#
6 2 BVD2
6 3 BVD1
64
D8
65
D9
66
D10
67
CD2#
68
GND
Function
GND
D3
D4
D5
D6
D7
CE1#
A10
OE#
A11
A9
A8
A13
A14
WE#
NC
VC C
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
WP
GND
Ground
Data I/O
Card enable 1
Address input
Output enable
Address input
Write enable
No connection
Power supply voltage
No connection
Address input
Data I/O
Write protect
Ground
Function
Ground
Card detect 1
Data I/O
Card enable 2
No connection
Address
input
A21 (NC for < 2 MB types)
Power supply voltage
No connection
A22 (NC for < 4 MB types)
A23 (NC for < 8 MB types)
A24 (NC for < 16 MB types)
Address
input
No connection
Attribute memory select
Battery voltage detect 2
Battery voltage detect 1
Data I/O
Card detect 2
Ground
B L O C K D I A G R A M (MF832M-GMCAVXX)
A24
A23
A22
A21
A0
ADDRESSDECODER
A20
A19
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
16
CE#
8
ADDRESSBUS
BUFFERS
COMMON
MEMORY
16Mbit
FLASH
MEMORY
×16
21
8
OE# WE#
CE1#
DATA-BUS
BUFFERS
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
MODE
CONTROL
LOGIC
CE2#
WE#
VCC
OE#
CE# OE# WE#
REG#
13
WP
WRITE PROTECT
CD1#
OFF
ON
ATTRIBUTE
MEMORY
64Kbit
2
E PROM
×1
8
BVD2
BVD1
GND
CD2#
MITSUBISHI
ELECTRIC
2/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
FUNCTIONAL DESCRIPTION
The operating mode of the card is determined by
five active low control signals (REG#, CE1#,
CE2#, OE#, WE#), and control registers located in
each memory IC.
Common memory function
When the REG# signal is set to a high level
common memory is selected.
-Read mode
When each memory IC in the card are switched,
the control registers of each memory IC are set to
read only mode.
Operation of the card then depends on the four
possible combinations of CE1# and CE2# (note WE#
should be set to a high level when the device is in read
mode except during combination (4) where it’s
condition is unimportant) :
(1) If CE1# is set to a low level and CE2# is set to a
high level, the card will work as an eight bit data
bus width card. Data can be accessed via the
lower half of the data bus (D0 to D7).
(2) If both CE1# and CE2# are set to a low level, data
will be accessible via the full sixteen bit data bus
width of the card. In this mode LSB of address bus
(A0) is ignored.
(3) If CE1# is set to a high level and CE2# is set
to a low level the odd bytes (only) can be
accessed through upper half of the data bus (D8
to D15). This mode is useful when handling the
odd (upper) bytes in a sixteen bit interface
system. Note that A0 is also ignored in this
operating condition.
(4) If CE1# and CE2# are set to a high level, the
card will be in standby mode where it consumes
low power. The data bus is kept high impedance.
When OE# is set to a low level data can be read from
the card, depending on the address applied and the
setting of CE1# and CE2# as mentioned above, except
under combination (4) When OE# is set to a high level
and WE# is set to a high level the card is in an output
disable mode
-W r i t e m o d e
By using the 4 combinations of CE1# and CE2# as
described under Read only above the appropriate
Data Out and Command/Data In bus selection can be
made.
If OE# is set to a high level and WE# set to a low level,
the control register will latch command data applied
at the rising edge of the WE# signal. Note that more
than one bus cycle may be required to latch the
command and/or the related data-please refer to the
Command Definition table.
After latching the command data, the card will go into
programming, erasure or other operation mode. For
details please refer to the Command Definition table,
each individual command’s definition and the
programming and erasure algorithms.
Attribute memory function
When the REG# signal is set to a low level attribute
memory is selected.
GM series
The card includes a byte wide attribute memory
consisting of 8K bytes of E 2 P R O M l o c a t e d a t t h e e v e n
addresses when the card is in the 8 bit
operating mode. It is located at sequential
addresses on the lower half of the data bus when
the card is in 16 bit operating mode i.e. A0 is
ignored.
To access the attribute memory, first set CE1# and
CE2#. Set CE1# to low level and CE2# to high level
for 8 bit mode or CE1# and CE2# to low level for 16
bit mode. Then select the required address. Note
please take care that in 8 bit mode A0 must be set low
for attribute memory access i.e. an even address is
applied. In 16 bit mode it is not important whether A0
is high or
low. Data can then be read by setting OE# to a low
level with WE set to a high level.
Writing to the attribute memory can be achieved
in byte mode only. To write to attribute memory set
OE# to high level and WE# to low level. The data to
be written will be latched at the rising edge of WE#.
Then, unless WE# changes back
from high level to low level over 100 µ s an
automatic erase/program operation starts which will
complete within 10ms.
Please also remember that for attribute memory A0 is
not applicable and it should be set to low, even
addressing only, in 8 bit mode or ignored for 16 bit
mode.
GN series
The card then outputs FFh on the lower half of the
data bus (D0 to D7) when the following conditions
are applied;
(1)CE1#=low level,CE2#=high level,OE#=low
level,WE#=high level,A0=low level.
(2)CE1#=low level,CE2#=low level,OE#=low
level,WE#=high level.
If OE# is set to a low level and WE# is set to a high
level the card data can be read from the card
depending on the condition of the control register.
MITSUBISHI
ELECTRIC
3/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
is applied. When the card is not in write protect
mode the WP output pin is set to a low level when
VCC is applied. By reading the state of the WP
output the host system can easily check whether the
card is in write protect mode or not.
Write protect mode
The card has a write protect switch on the opposite
edge to the connector edge. When it is switched on,
the card will be placed into a write protect mode,
where data can be read from the card but it cannot
be written to it. The WP output pin is set to a high
level when the card is in write protect mode and VCC
FUNCTION TABLE (COMMON MEMORY)
Mode
Standby
Read A(16-bit)
Read B(8-bit)
Read C(8-bit)
Write A(16-bit)
Write B(8-bit)
Write C(8-bit)
Output disable
OE#
CE2#
CE1#
H
H
H
H
H
H
L
H
H
L
H
L
L
L
H
X
L
L
L
L
X
H
H
H
H
X
X
L
H
X
H
L
L
H
L
X
H
H
L
H
L
L
H
H
L
H
L
H
H
H
L
X
H
X
H
H
L
H
X
X
WE#
I/O
(D15 to D8)
I/O
(D7 to D0)
High-Z
Odd byte data out
High-Z
High-Z
Odd byte data out
Command or odd byte data in
High-Z
Even byte data out
Even byte data out
odd byte data out
High-Z
Command or even byte data in
High-Z
Command or even byte data in
High-Z
Command or odd byte data in
Command or odd byte data in
High-Z
High-Z
High-Z
A0
REG#
Note 1 : H=V I H , L=V I L , X=V I H o r V I L , High-Z= High-impedance
To operate refer to the command definition, algorithms and so on.
FUNCTION TABLE (ATTRIBUTE MEMORY )
GM series
Mode
REG#
CE2#
CE1#
OE#
Standby
Read A(16-bit)
Read B
(8-bit)
Read C(8-bit)
Write A(16-bit)
Write B
(8-bit)
Write C(8-bit)
Output disable
L
L
L
L
L
L
L
L
L
L
H
L
H
H
L
L
H
H
L
X
H
L
L
L
H
L
L
L
H
X
X
L
L
L
L
H
H
H
H
H
X
H
H
H
H
L
L
L
L
H
X
X
L
H
X
X
L
L
X
X
REG#
CE2#
CE1#
OE#
WE#
A0
L
L
L
L
L
L
H
L
H
H
L
X
H
L
L
L
H
X
X
L
L
L
L
H
X
H
H
H
H
H
X
X
L
H
X
X
WE#
A0
I/O
(D15 to D8)
High-Z
Data out(not valid)
High-Z
High-Z
Data out(not valid)
Odd byte data in (not valid)
High-Z
High-Z
Odd byte data in (not valid)
High-Z
I/O
(D7 to D0)
High-Z
Even byte data out
Even byte data out
Data out(not valid)
High-Z
Even byte data in
Even byte data in
Odd byte data in (not valid)
High-Z
High-Z
GN series
Mode
Standby
Read A(16-bit)
Read B
(8-bit)
Read C(8-bit)
Output disable
I/O
(D15 to D8)
High-Z
Data out(not valid)
High-Z
High-Z
Data out(not valid)
High-Z
I/O
(D7 to D0)
High-Z
Data out (FFh)
Data out (FFh)
Data out(not valid)
High-Z
High-Z
Note 2 : H=V I H , L=V I L , X=V I H o r V I L , High-Z= High-impedance
MITSUBISHI
ELECTRIC
4/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
COMMAND DEFINITION
The corresponding memories of the card are set to
read/write mode and the operation is
controlled by the software command written in the
control register.
COMMAND DEFINITION TABLE
Command
Read/Reset
Programme setup/
Programme
Erase Setup/
Erase Confirm
Programme
Suspend/Resume
Erase Suspend/
Resume
Read Status
Register
Clear Status
Register
Read Device
Identifier Code
Bus
cycles M o d e
1
Write
First bus cycle
Address
Data in
ZA
FFh(FFFFh)
Mode
-
Second bus cycle
Address
Data in
-
Data out
-
2
Write
PA
40(4040)h
Write
PA
PD
-
2
Write
BA
20(2020)h
Write
BA
D0(D0D0)h
-
2
Write
PA
B0(B0B0)h
Write
PA
D0(D0D0)h
-
2
Write
BA
B0(B0B0)h
Write
BA
D0(D0D0)h
-
2
Write
ZA
70(7070)h
Read
ZA
-
RD
1
Write
ZA
50(5050)h
-
-
-
-
2
Write
ZA
90(9090)h
Read
DIA
-
DID
Note 3: Indicates the basic functions of commands and should not write another commands.
Refer to the algorithms to operate.
Signal status is defined in function table and bus status.
Parenthesized data shows the data for 16 bit mode operation.
ZA=an address of a memory zone (Please refer to the memory zone)
PA=Programming address
PD=Programming data
BA=An address of a memory block (Please refer to the memory block)
RD=Data of status Register
DIA=Device identifier address
0 0 0 0 0 0 h f o r m a n u f a c t u r e r c o d e 0 0 0 0 0 2 h f o r device code
DID=Device identifier data
2MB=manufacturer code : 89 (8989)h
device code : A6h (A6A6)h
Others=manufacturer code : 89 (8989)h
device code : AA (AAAA)h
Read/Reset
The memory in the card is switched to read mode by
writing FFh (FFFFh for 16 bit operation) into
the control resister. This mode is maintained
until the contents of register are changed. This
mode needs to be written to every
memory zone to which access is required.
P r o g r a m m e S e t u p / Programme
The setup programme command sets up the card for
programming. It is applied when 40h (4040h for 16
bit operation) is written to control register.
Programming will take place automatically after
latching the address and data which are applied at
the rising edge of WE#.
The completion of p r o g r a m m e c a n b e c o n f i r m e d b y
reading status register.
(For details please refer to the algorithm)
Erase Setup/Erase confirm
The erase setup is a command to set up the memory
block for erasure. Writing setup erase command 20h
(2020h for 16 bit operation) in the control register
followed by erase confirm command D0h (D0D0h
for 16 bit operation) will initiate a erasure
operation. Erasing will take place automatically
after the rising edge of WE# controlled by a internal
timer. The completion of
erase can be confirmed by reading status register.
(For details please refer to the algorithm)
These commands will not erase all the data of a
memory card and should be repeated for all the
required memory blocks. At an eight bit access
mode it should be noticed that the erasure of a
memory block will result in odd byte or even byte
erasure.
MITSUBISHI
ELECTRIC
5/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
Clear Status Register
The clear status register command will clear data of
status register. It is applied when 50h (5050h for 16
bit operation) is written to the control
r e g i s t e r . I f a n e r r o r o c c u r r e d d u r i n g programme or
erase, the status register must be cleared before
retrying programme or erase.
Erase Suspend/Erase Resume
The erase suspend command B0h (B0B0h for 16
bit operation) is a command to generate erase
interruption and to read data from another block
of selected memory zone. By writing in the
control register erase resume command D0h
(D0D0h for 16 bit operation), the memory block will
continue the erase operation.
These commands must be executed in erase
algorithm.
(For details please refer to the algorithm)
Read Device Identifier Codes
The read device identifier codes command is
implemented by writing 90h (9090h for 16 bit
operation) to the command register. After writing
the command, manufacturer code can be read at the
address of 000000h of the zone and device code can
be read at the address 000002h of the zone. Each
card uses the same type of memory throughout and
each memory zone will respond the same code.
(Do not apply high voltage to A10 pin in order to try
and read the device identifier codes as this will
result in the card being destroyed.)
Read Status Register
The Read status register is a command to read the
s t a t u s r e g i s t e r ’ s d a t a a n d t o m a k e s u r e programme
or erase operations complete successfully. The data
of status register can be read after writing 70h
(7070h for 16 bit operation) in the control register.
The register’s read data is latched on the falling
edge of OE#. At p r o g r a m m e o r e r a s e , t h e s t a t u s
register’s data must be read to verify the results.
STATUS REGISTER
When operating programme or erase, it is necessary
to read status register data and to transact these bit.
Each memory IC used in this
7 (15) BIT
6 (14) BIT
Programme/
Erase
Erase Status Bit Suspend Bit
Note 4: ( ) ; for 16 bit operation
5 (13) BIT
Erase Error
Bit
card has internal status register to make sure
programme or erase operations complete
successfully.
4 (12) BIT
Programme
Error Bit
3 (11) BIT
Vcc Error
Bit
2 (10) BIT
Programme
Suspend Bit
1,0 (9,8) BIT
Reserved
Bit ; Field name
Bit ; Field name
7(15) BIT ; P r o g r a m m e / E r a s e S t a t u s B i t
0=Busy (in programming/erasing) 1=Ready
6(14) BIT ; Erase Suspend Bit
1=Erase Suspended
5(13) BIT ; Erase Error Bit
1=Erase Error
4(12) BIT ; P r o g r a m m e E r r o r B i t
1=Programme Error
3(11) BIT ; Vcc Error
1 = E r r o r o f v o l t a g e a t Vcc
2(10) BIT ; P r o g r a m m e S u s p e n d B i t
1=Programme Suspended
1,0(9,8) BIT ; Reserved for future
MITSUBISHI
ELECTRIC
6/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
MEMORY ZONE AND BLOCK
8 bit mode
Even byte
0000000h
03FFFFEh
0400000h
07FFFFEh
0800000h
0BFFFFEh
0C00000h
0FFFFFEh
1000000h
13FFFFEh
1400000h
17FFFFEh
1800000h
1BFFFFEh
1C00000h
1FFFFFEh
Zone0
Zone2
Zone4
Zone6
Zone8
Zone10
Zone12
Zone14
Odd byte
0000001h
03FFFFFh
0400001h
07FFFFFh
0800001h
0BFFFFFh
0C00001h
0FFFFFFh
1000001h
13FFFFFh
1400001h
17FFFFFh
1800001h
1BFFFFFh
1C00001h
1FFFFFFh
Zone1
Zone3
0000001h
001FFFFh
0020001h
003FFFFh
Block0
0300001h
03FFFFFh
Block31
.
.
.
Zone5
Zone7
Zone9
Zone11
Block1
.
.
.
2MB; 1 zone=64KB∗1 6 b l o c k s
O t h e r s ; 1 z o n e = 6 4 K B ∗3 2 b l o c k s
Zone13
Zone15
Note 5 : 2MB;1 zone=0h to 1FFFFFh address
Others;1 zone=0h to 3FFFFFh address
Zone 2 to 15 do not exist in 2MB
Zone 2 to 15 do not exist in 4MB
Zone 4 to 15 do not exist in 8MB
Zone 8 to 15 do not exist in 16MB
Zone 10 to 15 do not exist in 20MB
16 bit mode
Even byte
0000000h
03FFFFFh
0400000h
07FFFFFh
0800000h
0BFFFFFh
0C00000h
0FFFFFFh
1000000h
13FFFFFh
1400000h
17FFFFFh
1800000h
1BFFFFFh
1C00000h
1FFFFFFh
Odd byte
Zone0
Zone1
0000000h
001FFFFh
0020000h
003FFFFh
Block0
0300000h
03FFFFFh
Block31
.
.
.
Zone2
Zone3
Zone4
Zone5
Zone6
Block1
.
.
.
2MB; 1 zone=64KW∗1 6 b l o c k s
O t h e r s ; 1 z o n e = 6 4 K W ∗3 2 b l o c k s
Zone7
Note 6 : 2MB;1 zone=0h to 1FFFFFh address
Others;1 zone=0h to 3FFFFFh address
Zone 1 to 7 do not exist in 2MB
Zone 1 to 7 do not exist in 4MB
Zone 2 to 7 do not exist in 8MB
Zone 4 to 7do not exist in 16MB
Zone 5 to 7 do not exist in 20MB
MITSUBISHI
ELECTRIC
7/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
PROGRAMME ALGORITHM
PROGRAMME
8 bit Operation
Write the programme setup command (40h) to the
address to be programmed. The next write sequence
will initiate the programming operation which will
end automatically as this period being controlled by
an internal timer and the data will be programmed.
To make sure that the data is
programmed correctly read data of the status
register. The read status register command (70h)
may or may not be applied to read the data after the
programme data input. If the data is programmed
step address and programme data according to the
above sequence.
The next address to be programmed should be
written with in a memory zone. After the last
programming operation, write the reset command
(FFh) in control register of the programmed memory
zones.
When overwriting bits programmed as “0”,
programme “ 1 ” o r t h e d e v i c e r e l i a b i l i t y i s a f f e c t e d .
16 bit operation
The algorithm of 16 bit programming is almost same
as the 8 bit programming. (Please refer to the
algorithm and the status of bus at programming)
PROGRAMME SUSPEND
8 bit Operation
The programme suspend is a command to generate
zone p r o g r a m m e i n t e r r u p t i o n i n o r d e r t o r e a d o r
data from another block of the selected memory
zone. It is necessary to write the erase suspend
command (B0h) in the programme algorithm.
The execution of the programme suspend can be
confirmed by reading data of the status register.
Then it is necessary to write the read command
(FFh) in control register in order to read data, after
reading the status register’s data.
After the programme resume command (D0h) is
written in the control register, the memory zone will
continue the programme operation.
16 bit Operation
M o s t o f t h e a l g o r i t h m o f 1 6 b i t programme
suspending is same as the one of the 8 bit
programme suspending.
(Please refer to the algorithm and the state of bus
at programme suspending.)
ERASE ALGORITHM
ERASE
8 bit Operation
Write the erase setup command (20h) and erase
confirm command (D0h) for the applicable block
address.
An erasure operation will then commence which
will be finished in 1.6s typical or less this being
automatically controlled by an internal timer.
To make sure that the data is erased correctly
and read data of the status register.
The read status register command (70h) may or may
not be applied to read the data after the erase
confirm command.
After erasure has completed write the reset
command (F F h ) t o t h e c o n t r o l r e g i s t e r , p r o c e e d
to the erase operation for the next memory block.
16 bit Operation
Most of the algorithm of 16 bit erasure is same as
the one of the 8 bit erasure.
(Please refer to the algorithm and the state of bus
at erasure.)
ERASE SUSPEND
8 bit Operation
The erase suspend is a command to generate block
e r a s e i n t e r r u p t i o n i n o r d e r t o r e a d o r programme
data from another block of the selected memory
zone. It is necessary to write the erase suspend
command (B0h) in the erase algorithm.
The execution of the erase suspend can be confirmed
by reading data of the status register.
Then it is necessary to write the read command
(FFh) in control register in order to read data, after
reading the status register’s data.
After the erase resume command (D0h) is written in
the control register, the memory block will continue
erase operation.
16 bit Operation
Most of the algorithm of 16 bit erase suspending is
same as the one of the 8 bit erase suspending.
(Please refer to the algorithm and the state of bus
at erase suspending.)
MITSUBISHI
ELECTRIC
8/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
PROGRAMME ALGORITHM
8 bit mode
PROGRAMME START
ADDRESS=FIRST LOCATION
WRITE PROGRAMME SETUP COMMAND(40h)
WRITE PROGRAMME DATA
READ STATUS REGISTER
NO
PROGRAMME
SUSPEND LOOP A
BIT 7= “ 0”
PROGRAMME
SUSPEND?
CHECK PROGRAMME
STATUS BIT
YES
BIT 7= “ 1”
CHECK Vcc
ERROR BIT
BIT 3= “ 1”
BIT 3= “ 0”
CHECK PROGRAMME
ERROR BIT
BIT 4= “ 1”
BIT 4= “ 0”
ADDRESS=
NEXT ADDRESS
LAST ADDRESS?
WRITE STATUS REGISTER
CLEAR COMMAND(50h)
NO
YES
WRITE RESET COMMAND(FFh)
PROGRAMME PASSED
MITSUBISHI
ELECTRIC
9/22
PROGRAMME FAILED
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
PROGRAMME ALGORITHM
16 bit mode
PROGRAMME START
ADDRESS=FIRST LOCATION
WRITE PROGRAMME SETUP COMMAND(4040h)
WRITE PROGRAMME DATA
READ STATUS REGISTER
PROGRAMME
SUSPEND LOOP B
NO
BIT 7.AND.15= “ 0”
PROGRAMME
SUSPEND?
CHECK PROGRAMME
STATUS BIT
YES
BIT 7.AND.15= “ 1”
CHECK Vcc
ERROR BIT
BIT 3.OR11= “ 1”
BIT 3.OR.11= “ 0”
CHECK PROGRAMME
ERROR BIT
BIT 4.OR.12= “ 1”
BIT 4.OR.12= “ 0”
ADDRESS=
NEXT ADDRESS
LAST ADDRESS?
WRITE STATUS REGISTER
CLEAR COMMAND(5050h)
NO
YES
WRITE RESET COMMAND(FFFFh)
PROGRAMME PASSED
MITSUBISHI
ELECTRIC
10/22
PROGRAMME FAILED
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
A
B
WRITE SUSPEND
COMMAND(B0h)
WRITE SUSPEND
COMMAND(B0B0h)
READ STATUS REGISTER
READ STATUS REGISTER
BIT 7.AND.15.= ” 0”
BIT 7.= ” 0”
CHECK PROGRAMME
STATUS BIT
CHECK PROGRAMME
STATUS BIT
BIT 7.= ” 1”
BIT 7.AND.15.= ” 1”
BI T 2.AND.10.= ” 0”
BI T 2.= ” 0”
CHECK PROGRAMME
SUSPEND BIT
CHECK PROGRAMME
SUSPEND BIT
BIT 2.= ” 1”
BIT 2.AND.10.= ” 1”
WRITE READ
COMMAND(FFh)
WRITE READ
COMMAND(FFFFh)
READ DATA
READ DATA
WRITE RESUME
COMMAND(D0h)
WRITE RESUME
COMMAND(D0D0h)
PROGRAMME SUSPEND PASSED
PROGRAMME SUSPEND PASSED
Note 7: If V c c e r r o r b i t i s d e t e c t e d , t r y t o p r o g r a m m e a g a i n a t V c c l e v e l .
T h i s i s a programme algorithm for a memory zone and not for a card.
Reading data from the zone generating programme suspend.
.OR. : =Logical or ; .AND. : =Logical and
MITSUBISHI
ELECTRIC
11/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
ERASE ALGORITHM
8 bit mode
ERASE START
ADDRESS=BLOCK ADDRESS
WRITE ERASE SETUP
COMMAND(20h)
WRITE ERASE COMMAND(D0h)
READ STATUS REGISTER
NO
BIT 7= ” 0”
CHECK ERASE
STATUS BIT
ERASE
SUSPEND?
ERASE SUSPEND
LOOP C
YES
BIT 7 = ” 1”
BIT 3= ” 1”
CHECK Vcc
ERROR BIT
BIT 3= ” 0”
BIT 4. OR. 5= ” 1”
CHECK CONTROL
COMMAND BIT
BIT 4. OR. .5= ” 0”
BIT 5.OR.13= ” 1”
CHECK ERASE
ERROR BIT
WRITE STATUS REGISTER CLEAR COMMAND(50h)
BIT 5.OR.13 = ” 0”
WRITE RESET COMMAND(FFh)
ERASE FAILED
ERASE PASSED
MITSUBISHI
ELECTRIC
12/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
ERASE ALGORITHM
16 bit mode
ERASE START
ADDRESS=BLOCK ADDRESS
WRITE ERASE SETUP
COMMAND(2020h)
WRITE ERASE COMMAND(D0D0h)
READ STATUS REGISTER
BIT 7.AND.15= ” 0”
CHECK ERASE
STATUS BIT
ERASE SUSPEND
LOOP D
NO
YES
ERASE
SUSPEND?
BIT 7.AND>15 = ” 1”
BIT 3.OR.11= ” 1”
CHECK Vcc
ERROR BIT
BIT 3.OR.11= ” 0”
BIT 4.OR.5 OR. 12.OR.13= ” 1”
CHECK CONTROL
COMMAND BIT
BIT 4.OR.5 OR. 12.OR.13= ” 0”
BIT 5.OR.13= ” 1”
CHECK ERASE
ERROR BIT
WRITE STATUS REGISTER CLEAR COMMAND(50h)
BIT 5 .OR.13= ” 0”
WRITE RESET COMMAND(FFh)
ERASE FAILED
ERASE PASSED
MITSUBISHI
ELECTRIC
13/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
C
D
WRITE SUSPEND
COMMAND(B0h)
WRITE SUSPEND
COMMAND(B0B0h)
READ STATUS REGISTER
READ STATUS REGISTER
BIT 7.AND.15.= ” 0”
BIT 7.= ” 0”
CHECK ERASE
STATUS BIT
CHECK ERASE
STATUS BIT
BIT 7.= ” 1”
BIT 7.AND.15.= ” 1”
BI T 6.AND.15.= ” 0”
BI T 6.= ” 0”
CHECK ERASE
SUSPEND BIT
CHECK ERASE
SUSPEND BIT
BIT 6.= ” 1”
BIT 6.AND.15.= ” 1”
READ /
PROGRAMME
READ /
PROGRAMME
WRITE RESUME
COMMAND(D0h)
WRITE RESUME
COMMAND(D0D0h)
PROGRAMME SUSPEND PASSED
PROGRAMME SUSPEND PASSED
Note 8 : If V c c e r r o r b i t i s d e t e c t e d , t r y t o p r o g r a m m e a g a i n a t V c c l e v e l .
T h i s i s a n e r a s e a l g o r i t h m f o r a m e m o r y block and not for a card.
Reading data from blocks other than the suspended block in the zone generating erase suspend.
.OR. : =Logical or ; .AND. : =Logical and
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VI
VO
Topr
Tstg
Parameter
V C C Supply voltage
Input voltage
Output voltage
Operating temperature
Storage temperature
Conditions
With respect to GND
Read/Write Operation
MITSUBISHI
ELECTRIC
14/22
Ratings
-0.5 to 6.5
- 0 . 3 t o VCC+ 0 . 3
0 t o VCC
0 to 70
-40 to 80
Unit
V
V
V
°C
°C
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
R E C O M M E N D E D O P E R A T I N G C O N D I T I O N S ( T a = 0 t o 5 5 °C , u n l e s s o t h e r w i s e n o t e d )
Limits
Parameter
Symbol
Min.
Typ.
Max.
VCC
V C C Supply voltage
4.75
5.0
5.25
VIH
High input voltage
2.4
VCC
VIL
Low input voltage
0
0.8
N
u
m
b
e
r
o
f
s
i
m
u
l
t
a
n
e
o
u
s
a
c
t
i
v
a
t
e
d
Programme
1
NACT
memory zones/blocks
Erase
1
Unit
V
V
V
Zone
Block
CAPACITANCE
Parameter
Symbol
Test conditions
Min.
Ci
Input capacitance
V I = G N D , v i = 2 5 m V r m s , f = 1 M H Z , T a = 2 5 °C
Co
O u t p u t c a p a c i t a n c e V I = G N D , v o = 2 5 m V r m s , f = 1 M H Z , T a = 2 5 °C
Note 9 : These parameters are not 100% tested.
Limits
Typ.
Max.
45
45
pF
pF
ELECTRICAL CHARACTERISTICS
Ta= 0 to 55°C, VCC=5V+/-5%, unless otherwise noted)
Parameter
Symbol
VOH
High output current
VOL
II H
Low output voltage
High input current
II L
Low output voltage
IO Z H
IO Z L
IC C 1
•
1
IC C 1
•
2
High output current
in off state
Low output current
in off state
Active V C C s u p p l y
current 1
Active V C C s u p p l y
current 2
Conditions
I O H =-0.1mA, BVDn
IO H = - 1 . 0 m A , O t h e r o u t p u t s
I O L = 2mA
V I =V C C V
V I =0V C E 1 # , C E 2 # , O E # , W E # , R E G #
Other inputs
Limits
Min.
Typ.
2.4
2.4
0
0.4
10
-70
-10
V
µA
µA
-10
10
µA
-10
µA
130
200
mA
110
180
mA
CE1#=CE2#=V I H or OE#=V I H , V O ( D m ) = 0 V
CE1#=CE2# < 0.2V, Other inputs < 0.2V
Unit
V
CE1#=CE2#=V I H or OE#=V I H , V O ( D m ) = V C C
CE1#=CE2#=V I L , O t h e r i n p u t s = V I H or V I L ,
Outputs=open
Max.
or > V C C - 0 . 2 V , O u t p u t s = o p e n
2MB
4MB
IC C 2 • 1 S t a n d b y VC C
CE1#=CE2#=V I H , O t h e r
8MB
supply current 1
i n p u t s = V I H o r VI L
16MB
20MB
32MB
2MB
0.05
4MB
0.05
IC C 2 • 2 S t a n d b y VC C s u p p l y C E 1 # = C E 2 # > V C C - 0 . 2 V ,
8MB
0.10
current 2
Other inputs < 0.2V
16MB
0.20
or > V C C - 0 . 2 V
20MB
0.25
32MB
0.40
Note 10 : Currents flowing into the card are taken as positive (unsigned).
T y p i c a l v a l u e s a r e m e a s u r e d a t V C C = 5 . 0 V , T a = 2 5 °C.
The card consumes active current at programming, erasure even if both CE1# and
high level.
MITSUBISHI
ELECTRIC
15/22
6.0
6.0
10
18
22
34
1.2
1.4
1.8
1.8
2.0
2.6
mA
µA
CE2# are
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
S W I T C H I N G C H A R A C T E R I S T I C S ( C O M M O N M E M O R Y ) ( T a = 0 t o 5 5 °C, Vcc=5V+/-5% )
Limits
Parameter
Symbol
Min.
Typ.
Max.
tcR
Read cycle time
150
ta(A)
Address access time
150
ta(CE)
Card enable access time
150
ta(OE)
Output enable access time
75
tdis(CE)
75
Output disable time (from CE#)
tdis(OE)
ten(CE)
ten(OE)
ns
Output enable time (from CE#)
5
ns
Output enable time (from OE#)
Data valid time after address change
5
ns
0
ns
T I M I N G R E Q U I R E M E N T S ( C O M M O N M E M O R Y ) ( T a = 0 t o 5 5 °C, Vcc=5V+/-5% )
Limits
Parameter
Symbol
Min.
Typ.
tcW
Write cycle time
150
t S U (A)
Address setup time
20
trec(WE)
Write recovery time
20
tsu(D-WEH) D a t a s e t u p t i m e
50
th(D)
Data hold time
20
tWRR
Write recovery time before read
0
tsu(A-WEH) A d d r e s s s e t u p t i m e t o w r i t e e n a b l e h i g h
100
tsu(CE)
Card enable setup time
20
th(CE)
Card enable hold time
20
tw(WE)
Write pulse width
80
tWPH
Write pulse width high
40
tDP
Duration of programming operation
6.5
tDE
Duration of erase operation
900
Note 11 : Refer to switching characteristics for read parameters
TIMING DIAGRAM
Common Memory Read
An
ns
ns
ns
ns
ns
75
Output disable time (from OE#)
tv(A)
Unit
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
tcR
VIH
VIL
ta(A)
VIH
tV(A)
ta(CE)
CE#
VIL
tdis(CE)
ta(OE)
VIH
OE#
VIL
ten(CE)
VOH
Dm
(DOUT ) VOL
tdis(OE)
ten(OE)
OUTPUT VALID
High-Z
W E # =“ H” l e v e l , R E G # =” H” l e v e l
MITSUBISHI
ELECTRIC
16/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
TIMING DIAGRAM (COMMON MEMORY)
Programme Mode
PROGRAMME
PROGRAMME
SET UP
STATUS REGISTER
RESET
VIH
PA
An
PA
PA
PA
VIL
trec(WE)
tcW
tsu(A)
tsu(A-WEH)
VIH
CE#
VIL
OE#
tWRR
th(CE)
tsu(CE)
VIH
VIL
tDP
tWPH
WE#
VIH
VIL
tsu(D-WEH)
Dm
th(WE)
tw(WE)
VOH
Din
40
VOL
Dout
FF
High-Z
R E G # =” H” l e v e l
Erase Mode
ERESE
SET UP
STATUS REGISTER
ERASE
RESET
VIH
PA
An
PA
PA
PA
VIL
tsu(A)
trec(WE)
tcW
tsu(A-WEH)
VIH
CE#
VIL
OE#
tWRR
th(CE)
tsu(CE)
VIH
VIL
tDE
tWPH
WE#
VIH
VIL
tsu(D-WEH)
Dm
th(WE)
tw(WE)
VOH
VOL
40
Din
Dout
FF
High-Z
R E G # =” H” l e v e l
MITSUBISHI
ELECTRIC
17/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
SWITCHING CHARACTERISTICS (ATTRIBUTE MEMORY)
Read Cycle ( Ta= 0 to 55°C , VCC=5V+/-5%, unless otherwise noted)
Parameter
Symbol
Min.
300
Limits
Typ.
Output disable time (from CE#)
300
300
150
100
Unit
ns
ns
ns
ns
ns
Output disable time (from OE#)
100
ns
tdis(OE)R
ten(CE)R
Output enable time (from CE#)
5
ns
ten(CE)R
Output enable time (from OE#)
Data valid time after address change
5
ns
0
ns
tv(A)R
Read cycle time
Address access time
Card enable access time
Output enable access time
Max.
tcRR
ta(A)R
ta(CE)R
ta(OE)R
tdis(dis)R
TIMING REQUIREMENTS (ATTRIBUTE MEMORY)
Write Cycle GM series only ( Ta= 0 to 55°C , VCC=5V+/-5%, unless otherwise noted)
Limits
Parameter
Symbol
Min.
Typ.
t AS R
Address setup time
30
t AHR
Address hold time
30
tCSR
CE setup time
40
t C HR
CE hold time
30
tDSR
Data setup time
120
t D HR
Data hold time
40
tOESR
OE setup time
30
t O E HR
OE hold time
40
tWPR
Write pulse width
170
t D LR
Data latch time
120
tBLR
Byte load cycle time
100
tWCR
Write cycle time
10
TIMING DIAGRAM (Attribute Memory)
Read
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
tCRR
VIH
An
VIL
CE#
ta(A)R
tv(A)R
ta(CE)R
VIH
VIL
ten(CE)R
ta(OE)R
VIH
OE#
tdis(CE)R
VIL
tdis(OE)R
ten(OE)R
VOH
Dm
(DOUT ) VOL
High-Z
OUTPUT VALID
W E # =“ H” l e v e l , R E G # =” L” l e v e l
MITSUBISHI
ELECTRIC
18/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
Byte Write (GM series only)
tAHR
VIH
An
VIL
tCSR
tCHR
VIH
CE#
VIL
tASR
tWPR
VIH
WE#
VIL
tOESR
tOEHR
VIH
OE#
tdis(OE)R
VIL
tDHR
Hi-Z
VIH
Dm
(DIN)
tDSR
VIL
ten(OE)R
Hi-Z
VOH
Dm
(DOUT ) VOL
R E G # =“ L” l e v e l
PAGE MODE WRITE (G M s e r i e s o n l y )
An
(n>5)
An
(A0~A5)
0h
4h
2h
3Ch
3Eh
CE#
tsu(CE)R
th(CE)R
tw(WE)R
WE#
tsu(A)R
tsu(OE-WE)R
tDLR
tBLCR
th(OE-WE)R
trec(WE)R
OE#
t(D-WEH)R
th(D)R
tcWR
Hi-Z
DIN
tdis(OE)R
DOUT
Hi-Z
R E G # =“ L” l e v e l
MITSUBISHI
ELECTRIC
19/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
Note 12 : AC Test Conditions
I n p u t p u l s e l e v e l s : VI L= 0 . 4 V , VI H= 2 . 8 V
I n p u t p u l s e r i s e , f a l l t i m e : t r =t f = 1 0 n s
Reference voltage
Input : V I L = 0 . 8 V , V I H = 2 . 4 V
O u t p u t : VOL= 0 . 8 V , VOH= 2 . 0 V
(ten and tdis are measured when output voltage is ± 500mV from steady state. )
Load : 100pF+ 1 TTL gate
5pF+ 1 TTL gate (at ten and tdis measuring)
1 3 : T h e d a t a w r i t e i s p e r f o r m e d d u r i n g t h e i n t e r v a l w h e n b o t h C E # a n d W E # a r e “ L” l e v e l .
14 : Do not apply inverted phase signal externally when Dm pin is in output mode.
15 : CE# is indicated as follows:
R e a d A / W r i t e A : CE#=CE1#=CE2#
R e a d B / W r i t e B : C E # = C E 1 # , C E 2 # = “ H” l e v e l
R e a d C / W r i t e C : C E # = C E 2 # , C E 1 # = “ H” l e v e l
16:
Indicates the don’t care input.
R E C O M M E N D E D P O W E R U P / D O W N C O N D I T I O N S ( T a = 0 t o 5 5 °C , u n l e s s o t h e r w i s e n o t e d )
Limits
Test conditions
Parameter
Symbol
Min.
Max.
Unit
0V< V C C <2V
0
VI
V
Vi(CE)
CE input voltage
VCC-0.1
VI
V
2V< V C C < VIH
VI
V
VIH < V C C
VIH
t s u (CE)
CE# setup time
5.0
ms
t r e c (CE)
CE# recovery time
1.0
µs
t p r (VCC)
VCC rise time
0.1
300
ms
t p f (VCC)
VCC fall time
3.0
300
ms
POWER UP TIMING DIAGRAM
tpr(Vcc)
0.9×VCC
4.75V
tsu(CE)
VCC
VIH
2V
0.1×VCC
CE1#,CE2#
0V
Insertion
tpr(Vcc)
VCC
4.75V
0.9×VCC
tsu(CE)
VIH
2V
0.1×VCC
CE1#,CE2#
0V
Withdraw
BLOCK PROGRAM/ERASE TIME
Limits
Parameters
Unit
Typ.
Max.
Block erase time
1.1
10
s
Block program time
0.5
2.1
s
Note 17 : At Ta=25° C, Vcc=5V
B y t e / w o r d p r o g r a m t i m e i s a b o u t 8µ s ( t y p i c a l ) , b u t n o t g u a r a n t e e d .
MITSUBISHI
ELECTRIC
20/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
!
Warning ( if card with battery / card with auxiliary battery )
(1)Do not charge, short, disassemble, deform, heat, or throw the batteries into fire, as they may ignite, overheat,
rupture or explode.
(2)Place the batteries out of the reach of children. If somebody swallows them, they should see a doctor
immediately.
(3)When discarding or storing the batteries, wrap them individually with cellophane tape or other nonconductive
material. If they are positioned in contact with any other metals or batteries, they may explode, rupture or
leak electrolyte solution.
!
Caution
This product is not designed or manufactured for use in a device or system that is used under circumstances in
which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for a
special applications, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear,
or undersea repeater use.
Keep safety first in your circuit designs !
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due consideration to safety when making
your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits,(2)use of
non-flammable material or (3)prevention against any malfunction or mishap.
Notes regarding these materials
lThese materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
l Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any thirdparty’s rights, originating in the use of any product data, diagrams, charts or circuit application examples
contained in these materials.
l All information contained in these materials, including product data, diagrams and charts, represent
information on products at the time of publication of these materials, and are subject to change by Mitsubishi
Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor for the latest product information before purchasing a product listed
herein.
l For instruction on proper use of the IC card, thoroughly read the manual attached to the product before use.
After reading please store the manual in s safe place for future reference.
l The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole
or in part these materials.
l If these products or technologies are subject the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than approved
destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or
the country of destination is prohibited.
l Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product
distributor for further details on these materials or the products contained therein.
MITSUBISHI
ELECTRIC
21/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
OUTLINE(68P-013)
MITSUBISHI
ELECTRIC
22/22
Feb.1999 Rev2.0