MITSUBISHI LASER DIODES PD7XX8 SERIES InGaAs PIN PHOTO DIODES PD7088,PD708C8 TYPE NAME DESCRIPTION FEATURES PD7XX8 series are InGaAs pin photodiode which has a • φ80µm active diameter sensitive area of φ80µm. • 1000 ~1600nm wavelength band • Small dark current • High speed responce • High quantum efficiency • Ball lens cap (PD708C8) PD7XX8 is suitable for receving the light having a wavelength band of 1000 to 1600nm. This photodiode features high-speed response and a high quantum efficiency, and is suitable for the light receiving elements for optical fiber communication systems. APPLICATION Receiver for long-distance optical fiber communication systems ABSOLUTE MAXIMUM RATING Symbol VR IR IF TC Tstg Parameter Reverse voltage Revers current Forward current Case temperature Storage temperature Conditions - ELECTRICAL /OPTICAL CHARACTERISTICS Symbol Ct ID R fc Parameter Capacitance Dark current Responsivity Cutoff frequency Ratings 20 500 2 −40 ~ +85 −40 ~ +100 Unit V µA mA ˚C ˚C (TC = 25˚C ) Test conditions VR = 5V,f = 1MHz VR = 5V VR = 5V,λ= 1300nm VR = 5V,λ= 1300nm,RL = 50Ω,-3dB Min. 0.6 1 Limits Typ. 1.2 0.05 0.9∗ 2.0 Max. 2 2.0 - Unit pF nA A/W GHz ∗ 0.85A/W typical fiber coupling sensitivity with Gl 50/125 for PD708C8 SEP.2000 MITSUBISHI LASER DIODES PD7XX8 SERIES InGaAs PIN PHOTO DIODES OUTLINE DRAWINGS Dimension : mm 0.4 0.4 90°±2° PD7088 φ2.0±0.2 （P.C.D） 1.3±0.15 Luminous plane 0.25±0.03 (Glass) 15±1 1.2±0.1 2.2±0.15 1.0±0.1 φ5.6±00.03 φ4.4 φ3.55±0.1 φ1.7 Reference plane 3−φ0.45 （2） （1）Case Dimension : mm φ5.6+0 -0.03 PD708C8 (0.4) (90°) 2-(0.4) (1.0) φ4.2 19±1 （2.8） 1.2±0.1 3.6±0.2 φ3.55±0.1 φ1.5 Reference plane 3−φ0.45 P.C.Dφ2.0 （3） （1） （2） SEP.2000 MITSUBISHI LASER DIODES PD7XX8 SERIES InGaAs PIN PHOTO DIODES TYPICAL CHARACTERISTICS Fig.1 Spectral response Fig.2 Dark current vs. reverse voltage Fig.3 Total capacitance vs. reverse voltage SEP.2000