MITSUBISHI PD8932

MITSUBISHI LASER DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
TYPE
NAME
PD8042,PD8932
DISCRIPTION
FEATURES
PD8XX2 is an InGaAs avalanche photodiode suitable for
• Active diameter 50µm
receiving the light having low noise, a wavelength band of
• Low
• High
• Very
• High
1000 to 1600nm. This photodiode features low noise, a high
quantum efficiency and a very small dark current and is
suitable for the light receiving elements for long-distance
noise
speed response
small dark current
quantum efficiency
optical communications.
APPLICATION
Receiver for long-distance fiber - optic communication systems
ABSOLUTE MAXIMUM RATINGS
Symbol
IR
IF
TC
Tstg
Parameter
Reverse current
Forward current
Case temperature
Storage temperature
Conditions
-
ELECTRICAL /OPTICAL CHARACTERISTICS
Symbol
V(BR)R
Ct
ID
η
fc
Parameter
Breakdown voltage
Capacitance
Dark current
Quantum efficiency
Cutoff frequency (-3dB)
Ratings
500
2
-40~+85
-40~+100
Unit
µA
mA
˚C
˚C
(TC = 25˚C)
Test conditions
IR = 100 µ A
VR = 0.9V (BR) R,f = 1MHz
VR = 0.9V (BR) R
M = 1, λ = 1300nm
M = 10,RL = 50 Ω ,-3dB
Min.
40
1
Limits
Typ.
60
0.7∗
60
80
2.5
Max.
90
0.9
100
-
Unit
V
pF
nA
%
GHz
∗: Ct=0.6F (typ.) for PD8932
SEP.2000
MITSUBISHI LASER DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
OUTLINE DRAWING
Dimention : mm
PD8042
Dimention : mm
PD8932
SEP.2000
MITSUBISHI LASER DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
TYPICAL CHARACTERISTICS
Fig.1 Spectral response
Fig.2 Dark current, photo current and
multiplication rate vs. reverse voltage
Fig.3 Total capacitance vs. reverse voltage
Fig.5 Multiplication rate dependence of cutoff frequency
fig.4 Frequency response
SEP.2000