MOTOROLA 2N3715

Order this document
by 2N3715/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for medium–speed switching and amplifier applications. These devices
feature:
•
•
•
•
•
Total Switching Time at 3 A typically 1.15 µs
Gain Ranges Specified at 1 A and 3 A
Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A
Excellent Safe Operating Areas
Complement to 2N3791–92
10 AMPERE
POWER TRANSISTORS
SILICON NPN
60 – 80 VOLTS
150 WATTS
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CASE 1–07
TO–204AA
(TO–3)
MAXIMUM RATINGS
Rating
Symbol
2N3715
2N3716
Unit
VCEO
60
80
Volts
Collector–Base Voltage
VCB
80
100
Volts
Emitter–Base Voltage
VEB
7.0
7.0
Volts
Collector Current
IC
10
10
Amps
Base Current
IB
4.0
4.0
Amps
Power Dissipation
PD
150
150
Watts
Thermal Resistance
θJC
1.17
1.17
_C/W
Collector–Emitter Voltage
Operating Junction and Storage Temperature Range
TJ, Tstg
– 65 to + 200
_C
PD, POWER DISSIPATION (WATTS)
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
175
200
Figure 1. Power–Temperature Derating Curve
Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed.
REV 7
3–12
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
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v
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Emitter–Base Cutoff Current
(VEB = 7.0 Vdc)
Symbol
Min
Max
Unit
IEBO
—
5.0
mAdc
—
—
—
—
1.0
1.0
10
10
60
80
—
—
50
30
150
—
VCE(sat)*
—
0.8
Vdc
VBE(sat)*
—
1.5
Vdc
VBE*
—
1.5
Vdc
hfe
4.0
—
—
All Types
Collector–Emitter Cutoff Current
(VCE = 80 Vdc, VBE = – 1.5 Vdc)
(VCE = 100 Vdc, VBE = – 1.5 Vdc)
(VCE = 60 Vdc, VBE = – 1.5 Vdc, TC = 150_C)
(VCE = 80 Vdc, VBE = – 1.5 Vdc, TC = 150_C)
ICEX
mAdc
2N3715
2N3716
2N3715
2N3716
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)*
Vdc
2N3715
2N3716
DC Current Gain (1)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 3.0 Adc, VCE = 2.0 Vdc)
2N3715, 2N3716
2N3715, 2N3716
hFE*
Collector–Emitter Saturation Voltage (1)
(IC = 5.0 Adc, IB = 0.5 Adc)
2N3715, 2N3716
Base–Emitter Saturation Voltage (1)
(IC = 5.0 Adc, IB = 0.5 Adc)
2N3715, 2N3716
Base–Emitter Voltage (1)
(IC = 3.0 Adc, VCE = 2.0 Vdc)
All Types
Small Signal Current Gain
(VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz)
All Types
—
Switching Times (Figure 2)
(IC = 5.0 A, IB1 = IB2 = 0.5 Adc)
Rise Time
Storage Time
Fall Time
(1) Pulse Test: Pulse Width
µs
Typ
300 µs, Duty Cycle
tr
ts
tf
0.45
0.3
0.4
2.0%.
TEST CIRCUIT
1.5
+11.5 V
WAVE SHAPE
AT POINT A
ts
1.0
SWITCHING TIMES ( µ s)
IC = 5 A, IB1 = IB2 = 0.5 A
f ≈ 150 cps DUTY CYCLE ≈ 2%
ton ~ 30 µs
–9 V
0.7
0.5
tf
0.3
tr
toff
~ 1.7 ms
100 Ω
1W
0.2
+ 30 V
~ 4.8 ms
A
20 Ω
1W
0.2
900 Ω
900 Ω
Hg RELAYS
IB1 = IB2
0.1
0.1
6Ω
4W
100 Ω
0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (AMPS)
3.0
5.0
+ 62 V
–9 V
100 Ω – 4 V
Figure 2. Typical Switching Times
Motorola Bipolar Power Transistor Device Data
3–13
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
1000
700
500
300
200
2N3715, 2N3716
TJ = 175°C
0.1
0.07
0.05
0.03
0.02
IB , BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
VCE = 2 V
SEE NOTES 1, 2
– 40°C
100
70
50
30
20
0.5
1.0 2.0
5.0 10 20
50
100 200
TJ = 175°C
– 40°C
10
7.0
5.0
3.0
2.0
25°C
0.01
0.1 0.2
VCE = 2 V
SEE NOTE 2
1.0
500 1000
25°C
0
0.4
0.8
1.2
1.6
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Current versus Base Current
Figure 4. Base Current–Voltage Variations
IC, COLLECTOR CURRENT (AMPS)
IB, BASE CURRENT (mA)
10
7
5
2N3715, 2N3716
3
2
TJ = 175°C
1
0.7
0.5
– 40°C
VCE = 2 V
SEE NOTE 2
25°C
0.3
0.2
0.1
0.1
0.4
0.8
1.2
1.6
2.0
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Current–Voltage Variations
NOTE 1. Dotted line indicates metered base current plus the ICBO of the transistor at 175_C.
NOTE 2. Pulse test: pulse width ≈ 200 µsec, duty cycle ≈ 1.5%.
3–14
Motorola Bipolar Power Transistor Device Data
2.0
VCE(sat) , COLLECTOR–EMITTER SATURATION
VOLTAGE (VOLTS)
1.4
TJ =
25°C
– 40°C
175°C
SEE NOTE 2
1.2
1.0
0.8
IC = 5 A
0.6
0.4
IC = 3 A
0.2
0.1
IC = 1 A
20
10
30
50
70
100
200
IB, BASE CURRENT (mA)
300
500
700
1000
2000
Figure 6. Collector–Emitter Saturation Voltage Variations
VBE(sat) , BASE–EMITTER SATURATION
VOLTAGE (VOLTS)
1.4
IC = 5 A
1.2
IC = 3 A
1.0
0.8
IC = 1 A
0.6
TJ =
25°C
– 40°C
175°C
SEE NOTE 2
0.4
0.2
0.1
20
10
30
50
70
100
200
IB, BASE CURRENT (mA)
300
500
700
1000
2000
Figure 7. Base–Emitter Saturation Voltage Variations
100
5.0
3.0
2.0
1.0
0.7
0.5
VCE = VCEO – 20 V
SEE NOTE 2
TJ = 175°C
0.3
0.2
0.1
– 0.6
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
10
7.0
TJ = 100°C
REVERSE
– 0.4
– 0.2
0
FORWARD
0.2
0.4
50
30
20
10
5.0
3.0
2.0
1.0
TJ = 175°C
0.5
0.3
0.2
0.1
VCE = VCEO – 20 V
SEE NOTE 2
TJ = 100°C
1
10
100
1000
10,000
100,000
VBE, BASE–EMITTER VOLTAGE (VOLTS)
RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)
Figure 8. Collector Current versus
Base–Emitter Voltage
Figure 9. Collector Current versus
Base–Emitter Resistance
Motorola Bipolar Power Transistor Device Data
3–15
hFE , CURRENT GAIN
200
TJ = 175°C
hFE
150
– 40°C
50
0
0.01
VCE = 2 V
25°C
100
+ IBIC )– ICBO
ICBO
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
3.0
5.0
7.0
10
fτ , CURRENT GAIN — BANDWIDTH PRODUCT (mc)
Figure 10. Current Gain Variations
8
6
4
VCE = 6 V
2
0
0.1
0.2
0.3
0.5
0.7
1.0
IC, COLLECTOR CURRENT (AMPS)
2.0
3.0
5.0
Figure 11. Current Gain — Bandwidth Product versus Collector Current
10
7
5
DC to 5 ms
≤ 50 µs
500 µs
3
2
1 ms
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
SAFE OPERATING AREAS
250 µs
1
0.7
0.5
0.3
0.2
0.1
0
10
20
30
40
50
60
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70
Figure 12. 2N3715
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within
the applicable Safe Area to avoid causing a collector–emitter
3–16
10
7
5
≤ 50 µs
DC to 5 ms
250 µs
500 µs
3
2
1 ms
1
0.7
0.5
0.3
0.2
0.1
0
10
80
20
30
40
50
60
70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
90
Figure 13. 2N3716
short. (Duty cycle of the excursions make no significant
change in these safe areas.) To insure operation below the
maximum TJ, the power–temperature derating curve must be
observed for both steady state and pulse power conditions.
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
C
–T–
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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Motorola Bipolar Power Transistor
◊ Device Data
*2N3715/D*
3–17
2N3715/D