Order this document by 2N3715/D SEMICONDUCTOR TECHNICAL DATA . . . designed for medium–speed switching and amplifier applications. These devices feature: • • • • • Total Switching Time at 3 A typically 1.15 µs Gain Ranges Specified at 1 A and 3 A Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A Excellent Safe Operating Areas Complement to 2N3791–92 10 AMPERE POWER TRANSISTORS SILICON NPN 60 – 80 VOLTS 150 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS Rating Symbol 2N3715 2N3716 Unit VCEO 60 80 Volts Collector–Base Voltage VCB 80 100 Volts Emitter–Base Voltage VEB 7.0 7.0 Volts Collector Current IC 10 10 Amps Base Current IB 4.0 4.0 Amps Power Dissipation PD 150 150 Watts Thermal Resistance θJC 1.17 1.17 _C/W Collector–Emitter Voltage Operating Junction and Storage Temperature Range TJ, Tstg – 65 to + 200 _C PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power–Temperature Derating Curve Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed. REV 7 3–12 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Emitter–Base Cutoff Current (VEB = 7.0 Vdc) Symbol Min Max Unit IEBO — 5.0 mAdc — — — — 1.0 1.0 10 10 60 80 — — 50 30 150 — VCE(sat)* — 0.8 Vdc VBE(sat)* — 1.5 Vdc VBE* — 1.5 Vdc hfe 4.0 — — All Types Collector–Emitter Cutoff Current (VCE = 80 Vdc, VBE = – 1.5 Vdc) (VCE = 100 Vdc, VBE = – 1.5 Vdc) (VCE = 60 Vdc, VBE = – 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VBE = – 1.5 Vdc, TC = 150_C) ICEX mAdc 2N3715 2N3716 2N3715 2N3716 Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) VCEO(sus)* Vdc 2N3715 2N3716 DC Current Gain (1) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 3.0 Adc, VCE = 2.0 Vdc) 2N3715, 2N3716 2N3715, 2N3716 hFE* Collector–Emitter Saturation Voltage (1) (IC = 5.0 Adc, IB = 0.5 Adc) 2N3715, 2N3716 Base–Emitter Saturation Voltage (1) (IC = 5.0 Adc, IB = 0.5 Adc) 2N3715, 2N3716 Base–Emitter Voltage (1) (IC = 3.0 Adc, VCE = 2.0 Vdc) All Types Small Signal Current Gain (VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz) All Types — Switching Times (Figure 2) (IC = 5.0 A, IB1 = IB2 = 0.5 Adc) Rise Time Storage Time Fall Time (1) Pulse Test: Pulse Width µs Typ 300 µs, Duty Cycle tr ts tf 0.45 0.3 0.4 2.0%. TEST CIRCUIT 1.5 +11.5 V WAVE SHAPE AT POINT A ts 1.0 SWITCHING TIMES ( µ s) IC = 5 A, IB1 = IB2 = 0.5 A f ≈ 150 cps DUTY CYCLE ≈ 2% ton ~ 30 µs –9 V 0.7 0.5 tf 0.3 tr toff ~ 1.7 ms 100 Ω 1W 0.2 + 30 V ~ 4.8 ms A 20 Ω 1W 0.2 900 Ω 900 Ω Hg RELAYS IB1 = IB2 0.1 0.1 6Ω 4W 100 Ω 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) 3.0 5.0 + 62 V –9 V 100 Ω – 4 V Figure 2. Typical Switching Times Motorola Bipolar Power Transistor Device Data 3–13 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1000 700 500 300 200 2N3715, 2N3716 TJ = 175°C 0.1 0.07 0.05 0.03 0.02 IB , BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) VCE = 2 V SEE NOTES 1, 2 – 40°C 100 70 50 30 20 0.5 1.0 2.0 5.0 10 20 50 100 200 TJ = 175°C – 40°C 10 7.0 5.0 3.0 2.0 25°C 0.01 0.1 0.2 VCE = 2 V SEE NOTE 2 1.0 500 1000 25°C 0 0.4 0.8 1.2 1.6 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 3. Collector Current versus Base Current Figure 4. Base Current–Voltage Variations IC, COLLECTOR CURRENT (AMPS) IB, BASE CURRENT (mA) 10 7 5 2N3715, 2N3716 3 2 TJ = 175°C 1 0.7 0.5 – 40°C VCE = 2 V SEE NOTE 2 25°C 0.3 0.2 0.1 0.1 0.4 0.8 1.2 1.6 2.0 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 5. Collector Current–Voltage Variations NOTE 1. Dotted line indicates metered base current plus the ICBO of the transistor at 175_C. NOTE 2. Pulse test: pulse width ≈ 200 µsec, duty cycle ≈ 1.5%. 3–14 Motorola Bipolar Power Transistor Device Data 2.0 VCE(sat) , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS) 1.4 TJ = 25°C – 40°C 175°C SEE NOTE 2 1.2 1.0 0.8 IC = 5 A 0.6 0.4 IC = 3 A 0.2 0.1 IC = 1 A 20 10 30 50 70 100 200 IB, BASE CURRENT (mA) 300 500 700 1000 2000 Figure 6. Collector–Emitter Saturation Voltage Variations VBE(sat) , BASE–EMITTER SATURATION VOLTAGE (VOLTS) 1.4 IC = 5 A 1.2 IC = 3 A 1.0 0.8 IC = 1 A 0.6 TJ = 25°C – 40°C 175°C SEE NOTE 2 0.4 0.2 0.1 20 10 30 50 70 100 200 IB, BASE CURRENT (mA) 300 500 700 1000 2000 Figure 7. Base–Emitter Saturation Voltage Variations 100 5.0 3.0 2.0 1.0 0.7 0.5 VCE = VCEO – 20 V SEE NOTE 2 TJ = 175°C 0.3 0.2 0.1 – 0.6 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 10 7.0 TJ = 100°C REVERSE – 0.4 – 0.2 0 FORWARD 0.2 0.4 50 30 20 10 5.0 3.0 2.0 1.0 TJ = 175°C 0.5 0.3 0.2 0.1 VCE = VCEO – 20 V SEE NOTE 2 TJ = 100°C 1 10 100 1000 10,000 100,000 VBE, BASE–EMITTER VOLTAGE (VOLTS) RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS) Figure 8. Collector Current versus Base–Emitter Voltage Figure 9. Collector Current versus Base–Emitter Resistance Motorola Bipolar Power Transistor Device Data 3–15 hFE , CURRENT GAIN 200 TJ = 175°C hFE 150 – 40°C 50 0 0.01 VCE = 2 V 25°C 100 + IBIC )– ICBO ICBO 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 3.0 5.0 7.0 10 fτ , CURRENT GAIN — BANDWIDTH PRODUCT (mc) Figure 10. Current Gain Variations 8 6 4 VCE = 6 V 2 0 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMPS) 2.0 3.0 5.0 Figure 11. Current Gain — Bandwidth Product versus Collector Current 10 7 5 DC to 5 ms ≤ 50 µs 500 µs 3 2 1 ms IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) SAFE OPERATING AREAS 250 µs 1 0.7 0.5 0.3 0.2 0.1 0 10 20 30 40 50 60 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 70 Figure 12. 2N3715 The Safe Operating Area Curves indicate IC – VCE limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector–emitter 3–16 10 7 5 ≤ 50 µs DC to 5 ms 250 µs 500 µs 3 2 1 ms 1 0.7 0.5 0.3 0.2 0.1 0 10 80 20 30 40 50 60 70 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 90 Figure 13. 2N3716 short. (Duty cycle of the excursions make no significant change in these safe areas.) To insure operation below the maximum TJ, the power–temperature derating curve must be observed for both steady state and pulse power conditions. Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 Motorola Bipolar Power Transistor ◊ Device Data *2N3715/D* 3–17 2N3715/D