MOTOROLA MC74HC158D

SEMICONDUCTOR TECHNICAL DATA
! ! ! "
High–Performance Silicon–Gate CMOS
The MC54/74HC158 is identical in pinout to the LS158. The device
inputs are compatible with Standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.
These devices route 2 nibbles (A or B) to a single port (Y) as determined by the Select input. The data is presented at the outputs in inverted
form for the HC158. A high level on the Output Enable input sets all four Y
outputs to a high level for the HC158.
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
16
1
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
16
1
•
•
•
•
•
•
•
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2 to 6V
D SUFFIX
SOIC PACKAGE
CASE 751B–05
16
Low Input Current: 1µA
1
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
ORDERING INFORMATION
Chip Complexity: 74 FETs or 18.5 Equivalent Gates
MC54HCXXXJ
MC74HCXXXN
MC74HCXXXD
LOGIC DIAGRAM
2
A0
5
A1
Nibble
A Inputs
FUNCTION TABLE
11
A2
Inputs
14
A3
4
B0
B1
Nibble
B Inputs
B2
3
7
6
9
10
12
Y0
Y1
Select
Output
Enable
Select
Y0–Y3
H
L
L
X
L
H
H
A0–A3
B0–B3
Y3
X = Don’t Care
A0–A3, B0–B3 = the levels of the respective Data–Word inputs.
Pin 16 = VCC
Pin 8 = GND
1
15
Pinout: 16–Lead Plastic Package (Top View)
Output
VCC Enable
16
15
Outputs
Output
Enable
Data
Outputs
Y2
13
B3
A3
B3
Y3
A2
B2
Y2
14
13
12
11
10
9
8
GND
1
2
3
4
5
6
7
Select
A0
B0
Y0
A1
B1
Y1
10/95
 Motorola, Inc. 1995
Ceramic
Plastic
SOIC
1
REV 7
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MC54/74HC158
MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
Iin
TL
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
Min
Max
Unit
2.0
6.0
V
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 2)
0
VCC
V
– 55
+ 125
_C
0
0
0
1000
500
400
ns
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
DC CHARACTERISTICS (Voltages Referenced to GND)
–55 to 25°C
≤85°C
≤125°C
Unit
Symbol
Parameter
VIH
Minimum High–Level Input Voltage
Vout = 0.1V or VCC –0.1V
|Iout| ≤ 20µA
2.0
4.5
6.0
1.50
3.15
4.20
1.50
3.15
4.20
1.50
3.15
4.20
V
VIL
Maximum Low–Level Input Voltage
Vout = 0.1V or VCC – 0.1V
|Iout| ≤ 20µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout| ≤ 20µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
VOH
Condition
Guaranteed Limit
VCC
V
Vin =VIH or VIL
VOL
Maximum Low–Level Output
Voltage
Vin = VIH or VIL
|Iout| ≤ 20µA
Vin = VIH or VIL
Iin
ICC
|Iout| ≤ 4.0mA
|Iout| ≤ 5.2mA
|Iout| ≤ 4.0mA
|Iout| ≤ 5.2mA
V
Maximum Input Leakage Current
Vin = VCC or GND
6.0
±0.1
±1.0
±1.0
µA
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0µA
6.0
8
80
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
MOTOROLA
2
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC158
AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Symbol
Parameter
Guaranteed Limit
VCC
V
–55 to 25°C
≤85°C
≤125°C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 3 and 5)
2.0
4.5
6.0
125
25
21
155
31
26
190
38
32
ns
tPLH,
tPHL
Maximum Propagation Delay, Select to Output Y
(Figures 3 and 5)
2.0
4.5
6.0
125
25
21
155
31
26
190
38
32
ns
tPLH,
tPHL
Maximum Propagation Delay, Output Enable to Output Y
(Figures 4 and 5)
2.0
4.5
6.0
115
23
20
145
29
25
175
35
30
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 2 and 5)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
10
10
10
pF
Cin
Maximum Input Capacitance
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Package)*
pF
35
* Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
SWITCHING WAVEFORMS
tf
tr
VCC
90%
Input Aor B
tf
tr
Select
50%
10%
50%
10%
GND
tPHL
GND
tPHL
tPLH
tPLH
90%
90%
50%
Output Y
VCC
90%
50%
Output Y
10%
tTLH
tTHL
10%
tTLH
tTHL
Figure 1.
Figure 2. Y versus Select, Inverted
tf
tr
Output Enable
TEST
POINT
VCC
90%
50%
10%
GND
tPLH
tPHL
90%
OUTPUT
DEVICE
UNDER
TEST
CL*
50%
10%
Output Y
tTHL
tTLH
*Includes all probe and jig capacitance
Figure 3.
High–Speed CMOS Logic Data
DL129 — Rev 6
Figure 4. Test Circuit
3
MOTOROLA
MC54/74HC158
PIN DESCRIPTIONS
The data present on these pins is in its inverted form for the
HC158. For the Output Enable input at a high level, the outputs
are at a high level for the HC158.
INPUTS
A0–A3 (Pins 2,5,11,14)
Nibble A inputs. The data present on these pins is transferred to the outputs when the Select input is at a low level and
the Output Enable input is at a low level. The data is presented
to the outputs in inverted form for the HC158.
CONTROL INPUTS
B0–B3 (Pins 3,6,10,13)
Nibble B inputs. The data present on these pins is transferred to the outputs when the Select input is at a high level and
the Output Enable input is at a low level. The data is presented
to the outputs in inverted form for the HC158.
Select (Pin 1)
Nibble select. This input determines the data word to be
transferred to the outputs. A low level on this input selects the
A inputs and a high level selects the B inputs.
OUTPUTS
Output Enable (Pin 15)
Output Enable input. A low level on thisinput allows the
selected data to be presented at the outputs. A high level on
this input sets all of the outputs to a high level for the HC158.
Y0–Y3 (Pins 4,7,9,12)
Data outputs. The selected input nibble is presented at
these outputs when the Output Enable input is at a low level.
A0
2
4
B0
A1
3
5
7
B1
Y0
6
Y1
Nibble
Inputs
A2
Data
Outputs
11
9
B2
A3
10
14
12
B3
Output Enable
Select
Y2
13
Y3
15
1
Figure 5. Expanded Logic Diagram
MOTOROLA
4
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC158
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
ISSUE V
-A16
9
1
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION F MAY NARROW TO 0.76 (0.030)
WHERE THE LEAD ENTERS THE CERAMIC
BODY.
-BL
C
DIM
A
B
C
D
E
F
G
J
K
L
M
N
-TN
SEATING
PLANE
K
E
M
F
J
G
D
16 PL
0.25 (0.010)
16 PL
0.25 (0.010)
T
M
A
9
1
8
T
B
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ISSUE R
-A16
M
C
DIM
A
B
C
D
F
G
H
J
K
L
M
S
L
S
-T-
SEATING
PLANE
K
H
D 16 PL
0.25 (0.010)
M
M
J
G
T A
M
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
-A-
16
1
P 8 PL
0.25 (0.010)
8
M
B
M
G
K
F
R X 45°
C
-TSEATING
PLANE
J
M
D 16 PL
0.25 (0.010)
High–Speed CMOS Logic Data
DL129 — Rev 6
M
T
B
S
A
S
5
INCHES
MIN
MAX
0.740 0.770
0.250 0.270
0.145 0.175
0.015 0.021
0.040 0.070
0.100 BSC
0.050 BSC
0.008 0.015
0.110 0.130
0.295 0.305
0°
10°
0.020 0.040
MILLIMETERS
MIN
MAX
18.80 19.55
6.35
6.85
3.69
4.44
0.39
0.53
1.02
1.77
2.54 BSC
1.27 BSC
0.21
0.38
2.80
3.30
7.50
7.74
0°
10°
0.51
1.01
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
-B-
MILLIMETERS
MIN
MAX
19.05 19.93
6.10
7.49
—
5.08
0.39
0.50
1.27 BSC
1.40
1.65
2.54 BSC
0.21
0.38
3.18
4.31
7.62 BSC
15°
0°
1.01
0.51
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
F
S
S
INCHES
MIN
MAX
0.750 0.785
0.240 0.295
—
0.200
0.015 0.020
0.050 BSC
0.055 0.065
0.100 BSC
0.008 0.015
0.125 0.170
0.300 BSC
15°
0°
0.020 0.040
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80 10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.25
0.10
0°
7°
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386 0.393
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0°
7°
0.229 0.244
0.010 0.019
MOTOROLA
MC54/74HC158
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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*MC54/74HC158/D*
MC54/74HC158/D
High–Speed CMOS Logic Data
DL129 — Rev 6