SEMICONDUCTOR TECHNICAL DATA High–Performance Silicon–Gate CMOS The MC54/74HC533A is identical in pinout to the LS533. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. These latches appear transparent to data (i.e., the outputs change asynchronously) when Latch Enable is high. The Data appears at the outputs in inverted form. When Latch Enable goes low, data meeting the setup and hold time becomes latched. The Output Enable input does not affect the state of the latches, but when Output Enable is high, all device outputs are forced to the high-impedance state. Thus, data may be latched even when the outputs are not enabled. The HC533A is identical in function to the HC563 but has the data inputs on the opposite side of the package from the outputs to facilitate PC board layout. This device is similar in function to the HC373A, which has noninverting outputs. J SUFFIX CERAMIC PACKAGE CASE 732–03 20 1 N SUFFIX PLASTIC PACKAGE CASE 738–03 20 1 1 ORDERING INFORMATION MC54HCXXXAJ MC74HCXXXAN MC74HCXXXADW • • • • • • Output Drive Capability: 15 LSTTL Loads Outputs Directly Interface to CMOS, NMOS and TTL Operating Voltage Range: 2.0 to 6.0 V Low Input Current: 1.0 µA High Noise Immunity Characteristic of CMOS Devices In Compliance with the Requirements Defined by JEDEC Standard No. 7A • Chip Complexity: 256 FETs or 64 Equivalent Gates D1 D2 DATA INPUTS D3 D4 D5 D6 D7 3 2 4 5 7 6 8 9 OUTPUT ENABLE Q0 13 12 14 15 17 16 18 19 LATCH ENABLE 11 1 OUTPUT ENABLE Q0 Q1 Q2 Q3 Q4 1 20 VCC 2 19 Q7 D0 3 18 D7 D1 4 17 D6 Q1 5 16 Q6 Q2 6 15 Q5 D2 7 14 D5 D3 8 13 D4 Q3 9 12 10 11 Q4 LATCH ENABLE GND INVERTING OUTPUTS Q5 FUNCTION TABLE Q6 Inputs Q7 PIN 20 = VCC PIN 10 = GND 3/97 1 REV 3 Output Output Enable Latch Enable D Q L L L H H H L X H L X X L H No Change Z X = Don’t Care Z = High Impedance Motorola, Inc. 1997 Ceramic Plastic SOIC PIN ASSIGNMENT LOGIC DIAGRAM D0 DW SUFFIX SOIC PACKAGE CASE 751D–04 20 MC54/74HC533A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS* Symbol VCC Parameter DC Supply Voltage (Referenced to GND) Value Unit – 0.5 to + 7.0 V V Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V DC Input Current, per Pin ± 20 mA Iout DC Output Current, per Pin ± 35 mA ICC DC Supply Current, VCC and GND Pins ± 75 mA PD Power Dissipation in Still Air, Plastic or Ceramic DIP† SOIC Package† 750 500 mW Tstg Storage Temperature – 65 to + 150 _C Iin TL This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. v v _C Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) (Ceramic DIP) 260 300 * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. †Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ v ÎÎÎÎ v ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ v ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter DC Supply Voltage (Referenced to GND) Min Max Unit 2.0 6.0 V 0 VCC V – 55 + 125 _C 0 0 0 1000 500 400 ns DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 1) VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions VCC V – 55 to 25_C 85_C 125_C Unit VIH Minimum High–Level Input Voltage Vout = VCC – 0.1 V |Iout| 20 µA 2.0 3.0 4.5 6.0 1.5 2.1 3.15 4.2 1.5 2.1 3.15 4.2 1.5 2.1 3.15 4.2 V VIL Maximum Low–Level Input Voltage Vout = 0.1 V |Iout| 20 µA 2.0 3.0 4.5 6.0 0.5 0.9 1.35 1.8 0.5 0.9 1.35 1.8 0.5 0.9 1.35 1.8 V Minimum High–Level Output Voltage Vin = VIH |Iout| 20 µA 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V 3.0 4.5 6.0 2.48 3.98 5.48 2.34 3.84 5.34 2.2 3.7 5.2 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 6.0 0.26 0.26 0.26 0.33 0.33 0.33 0.4 0.4 0.4 VOH Vin = VIH VOL Maximum Low–Level Output Voltage 2.4 mA 6.0 mA 7.8 mA Vin = VIL |Iout| 20 µA Vin = VIL MOTOROLA |Iout| |Iout| |Iout| |Iout| |Iout| |Iout| 2 2.4 mA 6.0 mA 7.8 mA V High–Speed CMOS Logic Data DL129 — Rev 6 MC54/74HC533A ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ v v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ v v ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions Iin Maximum Input Leakage Current IOZ Maximum Three–State Leakage Current ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Output in High–Impedance State Vin = VIL or VIH Vout = VCC or GND Vin = VCC or GND Iout = 0 µA VCC V – 55 to 25_C 6.0 ± 0.1 ± 1.0 ± 1.0 µA 6.0 ± 0.5 ± 5.0 ± 10 µA 6.0 4.0 40 160 µA 85_C 125_C Unit NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit S b l Symbol P Parameter Fi Fig. VCC V – 55 to 25_C 85_C 125_C U i Unit tPLH tPHL Maximum Propagation Delay, Input D to Q 1, 5 2.0 3.0 4.5 6.0 125 80 25 21 155 110 31 26 190 130 38 32 ns tPLH tPHL Maximum Propagation Delay, Latch Enable to Q 2, 5 2.0 3.0 4.5 6.0 125 80 25 21 155 110 31 26 190 130 38 32 ns tPLZ tPHZ Maximum Propagation Delay, Output Enable to Q 3, 6 2.0 3.0 4.5 6.0 150 100 30 26 190 125 38 33 225 150 45 38 ns tPZL tPZH Maximum Propagation Delay, Output Enable to Q 3, 6 2.0 3.0 4.5 6.0 150 100 30 26 190 125 38 33 225 150 45 38 ns tTLH tTHL Maximum Output Transition Time, Any Output 1, 5 2.0 3.0 4.5 6.0 75 27 15 13 95 32 19 16 110 36 22 19 ns Maximum Input Capacitance 10 10 10 pF Maximum Tri–State Output Capacitance (Output in Hi–Impedance State) 15 15 15 pF ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ Cin Cout NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High– Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V CPD P Power Di Dissipation i i C Capacitance i (P (Per E Enabled bl d O Output)* )* 36 pF F * Used to determine the no–load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). High–Speed CMOS Logic Data DL129 — Rev 6 3 MOTOROLA MC54/74HC533A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ v v ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ TIMING REQUIREMENTS (CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit Symbol S b l Parameter P Fig. Fi VCC Volts – 55 to 25_C Min 85_C Max Min 125_C Max Min Max Unit U i tsu Minimum Setup Time, Input D to Latch Enable 4 2.0 3.0 4.5 6.0 25 20 5.0 5.0 30 25 6.0 6.0 40 30 8.0 7.0 ns th Minimum Hold Time, Latch Enable to Input D 4 2.0 3.0 4.5 6.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 ns tw Minimum Pulse Width, Latch Enable 2 2.0 3.0 4.5 6.0 60 23 12 10 75 27 15 13 90 32 18 15 ns tr, tf Maximum Input Rise and Fall Times 1 2.0 3.0 4.5 6.0 1000 800 500 400 1000 800 500 400 1000 800 500 400 ns SWITCHING WAVEFORMS tr INPUT D tf VCC VCC 90% LATCH ENABLE 50% 50% 10% tPHL GND tw GND tPLH tPLH tPHL 90% Q 50% Q 50% 10% tTHL tTLH Figure 1. Figure 2. OUTPUT ENABLE VCC 50% VALID VCC GND tPZL tPLZ INPUT D HIGH IMPEDANCE Q 50% tsu 50% tPZH 10% VOL 90% VOH tPHZ LATCH ENABLE th GND VCC 50% GND 1.3 V HIGH IMPEDANCE Q Figure 3. MOTOROLA Figure 4. 4 High–Speed CMOS Logic Data DL129 — Rev 6 MC54/74HC533A TEST CIRCUITS TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST DEVICE UNDER TEST CL* CONNECT TO VCC WHEN TESTING tPLZ AND tPZL CONNECT TO GND WHEN TESTING tPHZ AND tPZH 1 kΩ OUTPUT CL* * Includes all probe and jig capacitance * Includes all probe and jig capacitance Figure 5. Figure 6. EXPANDED LOGIC DIAGRAM D0 3 D1 4 D Q D LE LATCH ENABLE OUTPUT ENABLE D2 7 Q D3 8 D LE Q D4 13 D LE Q D5 14 D LE Q D6 17 D LE Q D7 18 D LE Q D LE Q LE 11 1 2 Q0 High–Speed CMOS Logic Data DL129 — Rev 6 5 Q1 6 9 Q2 Q3 5 12 Q4 15 Q5 16 Q6 19 Q7 MOTOROLA MC54/74HC533A OUTLINE DIMENSIONS 20 11 1 10 J SUFFIX CERAMIC PACKAGE CASE 732–03 ISSUE E NOTES: 1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE POSITION AT SEATING PLANE, AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSIONS A AND B INCLUDE MENISCUS. B A L C F DIM A B C D F G H J K L M N N H G D J K M MILLIMETERS MIN MAX 23.88 25.15 6.60 7.49 3.81 5.08 0.38 0.56 1.40 1.65 2.54 BSC 0.51 1.27 0.20 0.30 3.18 4.06 7.62 BSC 0_ 15 _ 0.25 1.02 INCHES MIN MAX 0.940 0.990 0.260 0.295 0.150 0.200 0.015 0.022 0.055 0.065 0.100 BSC 0.020 0.050 0.008 0.012 0.125 0.160 0.300 BSC 0_ 15_ 0.010 0.040 SEATING PLANE N SUFFIX PLASTIC PACKAGE CASE 738–03 ISSUE E –A– 20 11 1 10 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. B L C –T– K SEATING PLANE M N E G F J D M T A 11 –B– 10X P 0.010 (0.25) 1 M B M 10 20X D 0.010 (0.25) M T A B S J S F R X 45 _ C –T– 18X G K SEATING PLANE M T B M M DW SUFFIX PLASTIC SOIC PACKAGE CASE 751D–04 ISSUE E –A– 20 20 PL 0.25 (0.010) 20 PL 0.25 (0.010) MOTOROLA DIM A B C D E F G J K L M N INCHES MIN MAX 1.010 1.070 0.240 0.260 0.150 0.180 0.015 0.022 0.050 BSC 0.050 0.070 0.100 BSC 0.008 0.015 0.110 0.140 0.300 BSC 0_ 15 _ 0.020 0.040 MILLIMETERS MIN MAX 25.66 27.17 6.10 6.60 3.81 4.57 0.39 0.55 1.27 BSC 1.27 1.77 2.54 BSC 0.21 0.38 2.80 3.55 7.62 BSC 0_ 15_ 0.51 1.01 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.150 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 12.65 12.95 7.40 7.60 2.35 2.65 0.35 0.49 0.50 0.90 1.27 BSC 0.25 0.32 0.10 0.25 0_ 7_ 10.05 10.55 0.25 0.75 INCHES MIN MAX 0.499 0.510 0.292 0.299 0.093 0.104 0.014 0.019 0.020 0.035 0.050 BSC 0.010 0.012 0.004 0.009 0_ 7_ 0.395 0.415 0.010 0.029 M 6 High–Speed CMOS Logic Data DL129 — Rev 6 MC54/74HC533A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://www.mot.com/SPS/ High–Speed CMOS Logic Data DL129 — Rev 6 ◊ 7 MC74HC533A/D MOTOROLA