SEMICONDUCTOR TECHNICAL DATA # ## %!# &# # $#" High–Performance Silicon–Gate CMOS The MC54/74HCT374A may be used as a level converter for interfacing TTL or NMOS outputs to High–Speed CMOS inputs. The HCT374A is identical in pinout to the LS374. Data meeting the setup and hold time is clocked to the outputs with the rising edge of Clock. The Output Enable does not affect the state of the flip–flops, but when Output Enable is high, the outputs are forced to the high–impedance state. Thus, data may be stored even when the outputs are not enabled. The HCT374A is identical in function to the HCT574A, which has the input pins on the opposite side of the package from the output pins. This device is similar in function to the HCT534A, which has inverting outputs. • • • • • • Output Drive Capability: 15 LSTTL Loads TTL/NMOS–Compatible Input Levels Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 4.5 to 5.5 V Low Input Current: 1.0 µA In Compliance with the Requirements Defined by JEDEC Standard No. 7A • Chip Complexity: 276 FETs or 69 Equivalent Gates • Improvements over HCT374 — Improved Propagation Delays — 50% Lower Quiescent Power — Improved Input Noise and Latchup Immunity J SUFFIX CERAMIC PACKAGE CASE 732–03 20 1 N SUFFIX PLASTIC PACKAGE CASE 738–03 20 1 1 D1 D2 DATA INPUTS D3 D4 D5 D6 D7 CLOCK 2 3 4 5 7 6 8 9 13 12 ORDERING INFORMATION Ceramic MC54HCTXXXAJ Plastic MC74HCTXXXAN SOIC MC74HCTXXXADW SSOP MC74HCTXXXASD TSSOP MC74HCTXXXADT PIN ASSIGNMENT OUTPUT ENABLE Q0 14 15 17 16 18 19 Q1 Q2 Q4 1 DT SUFFIX TSSOP PACKAGE CASE 948E–02 20 Q0 Q3 1 SD SUFFIX SSOP PACKAGE CASE 940C–03 20 LOGIC DIAGRAM D0 DW SUFFIX SOIC PACKAGE CASE 751D–04 20 NONINVERTING OUTPUTS Q5 Q6 20 VCC 2 19 Q7 D0 3 18 D7 D1 4 17 D6 Q1 5 16 Q6 Q2 6 15 Q5 D2 7 14 D5 D3 8 13 D4 Q3 9 12 Q4 10 11 CLOCK GND Q7 1 11 FUNCTION TABLE PIN 20 = VCC PIN 10 = GND ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ OUTPUT ENABLE 1 Design Criteria Value Units Internal Gate Count* 69 ea. Internal Gate Propagation Delay 1.5 ns Internal Gate Power Dissipation 5.0 µW .0075 pJ Speed Power Product Inputs Output Enable L L L H 2/97 Motorola, Inc. 1997 1 Clock D Q L,H, X H L X X H L No Change Z X = don’t care Z = high impedance * Equivalent to a two–input NAND gate. REV 7 Output MC54/74HCT374A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS* Symbol VCC Parameter DC Supply Voltage (Referenced to GND) Value Unit – 0.5 to + 7.0 V V Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V DC Input Current, per Pin ± 20 mA Iout DC Output Current, per Pin ± 35 mA ICC DC Supply Current, VCC and GND Pins ± 75 mA PD Power Dissipation in Still Air, Plastic or Ceramic DIP† SOIC Package† SSOP or TSSOP Package† 750 500 450 mW Tstg Storage Temperature – 65 to + 150 _C Iin TL This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. v v _C Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP, SOIC, SSOP or TSSOP Package) (Ceramic DIP) 260 300 * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. †Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C SSOP or TSSOP Package: – 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ v ÎÎÎÎ v ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ v ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 1) Min Max Unit 4.5 5.5 V 0 VCC V – 55 + 125 _C 0 500 ns DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit S b l Symbol P Parameter T Test C Conditions di i VCC V – 55 to 25_C 85_C 125_C U i Unit VIH Minimum High–Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| 20 µA 4.5 5.5 2.0 2.0 2.0 2.0 2.0 2.0 V VIL Maximum Low–Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| 20 µA 4.5 5.5 0.8 0.8 0.8 0.8 0.8 0.8 V Minimum High–Level Output Voltage Vin = VIH or VIL |Iout| 20 µA 4.5 5.5 4.4 5.4 4.4 5.4 4.4 5.4 V Vin = VIH or VIL |Iout| 6.0 mA 4.5 3.98 3.84 3.7 Vin = VIH or VIL |Iout| 20 µA 4.5 5.5 0.1 0.1 0.1 0.1 0.1 0.1 Vin = VIH or VIL |Iout| 6.0 mA 4.5 0.26 0.33 0.4 Vin = VCC or GND 5.5 ± 0.1 ± 1.0 ± 1.0 VOH VOL Iin MOTOROLA Maximum Low–Level Output Voltage Maximum Input Leakage Current 2 V µA High–Speed CMOS Logic Data DL129 — Rev 6 MC54/74HCT374A ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ v ÎÎÎÎ v ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ v ÎÎÎÎ v ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions VCC V – 55 to 25_C 85_C 125_C Unit IOZ Maximum Three–State Leakage Current Output in High–Impedance State Vin = VIL or VIH Vout = VCC or GND 5.5 ± 0.5 ± 5.0 ± 10 µA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 µA 5.5 4.0 40 160 µA ∆ICC Additional Quiescent Supply Current Vin = 2.4 V, Any One Input Vin = VCC or GND, Other Inputs lout = 0 µA ≥ –55_C 25_C to 125_C 2.9 2.4 5.5 55 mA A NOTE: 1. Total Supply Current = ICC + Σ∆ICC. NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit S b l Symbol – 55 to 25_C P Parameter 85_C 125_C U i Unit fmax Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 4) 30 24 20 MHz tPLH, tPHL Maximum Propagation Delay, Clock to Q (Figures 1 and 4) 31 39 47 ns tPLZ, tPHZ Maximum Propagation Delay, Output Enable to Q (Figures 2 and 5) 30 38 45 ns tPZL, tPZH Maximum Propagation Delay, Output Enable to Q (Figures 2 and 5) 30 38 45 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 4) 12 15 18 ns Maximum Input Capacitance 10 10 10 pF Maximum Three–State Output Capacitance (Output in High–Impedance State) 15 15 15 pF Cin Cout NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High– Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V CPD P Power Di Dissipation i i C Capacitance i (P (Per Fli Flip–Flop)* Fl )* pF F 65 * Used to determine the no–load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D). ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, Input tr = tf = 6.0 ns) Guaranteed Limit S b l Symbol – 55 to 25_C P Parameter 85_C 125_C U i Unit tsu Minimum Setup Time, Data to Clock (Figure 3) 12 15 18 ns th Minimum Hold Time, Clock to Data (Figure 3) 5.0 5.0 5.0 ns tw Minimum Pulse Width, Clock (Figure 1) 12 15 18 ns Maximum Input Rise and Fall Times (Figure 1) 500 500 500 ns tr, tf High–Speed CMOS Logic Data DL129 — Rev 6 3 MOTOROLA MC54/74HCT374A SWITCHING WAVEFORMS tr tf 3V 2.7 V 1.3 V 0.3 V tw CLOCK OUTPUT ENABLE VCC GND GND Q 1/fmax tPLH tPZL tPLZ tPZH tPHZ Q tTLH HIGH IMPEDANCE 1.3 V tPHL 90% 1.3 V 10% Q 1.3 V 10% VOL 90% VOH 1.3 V HIGH IMPEDANCE tTHL Figure 1. Figure 2. VALID 3V DATA 1.3 V GND tsu th 3V CLOCK 1.3 V GND Figure 3. TEST CIRCUITS TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST DEVICE UNDER TEST CL* CONNECT TO VCC WHEN TESTING tPLZ AND tPZL CONNECT TO GND WHEN TESTING tPHZ AND tPZH 1 kΩ OUTPUT CL* * Includes all probe and jig capacitance * Includes all probe and jig capacitance Figure 4. Figure 5. EXPANDED LOGIC DIAGRAM D0 3 D1 4 D Q D C CLOCK Q D3 8 D C Q D4 13 D C Q D5 14 D C Q D6 17 D C Q D7 18 D C Q D C Q C 11 OUTPUT 1 ENABLE MOTOROLA D2 7 2 Q0 5 Q1 6 Q2 9 Q3 4 12 Q4 15 Q5 16 Q6 19 Q7 High–Speed CMOS Logic Data DL129 — Rev 6 MC54/74HCT374A OUTLINE DIMENSIONS 20 11 1 10 J SUFFIX CERAMIC PACKAGE CASE 732–03 ISSUE E NOTES: 1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE POSITION AT SEATING PLANE, AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSIONS A AND B INCLUDE MENISCUS. B A L C F DIM A B C D F G H J K L M N N H G D J K M MILLIMETERS MIN MAX 23.88 25.15 6.60 7.49 3.81 5.08 0.38 0.56 1.40 1.65 2.54 BSC 0.51 1.27 0.20 0.30 3.18 4.06 7.62 BSC 0_ 15 _ 0.25 1.02 INCHES MIN MAX 0.940 0.990 0.260 0.295 0.150 0.200 0.015 0.022 0.055 0.065 0.100 BSC 0.020 0.050 0.008 0.012 0.125 0.160 0.300 BSC 0_ 15_ 0.010 0.040 SEATING PLANE N SUFFIX PLASTIC PACKAGE CASE 738–03 ISSUE E –A– 20 11 1 10 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. B L C –T– DIM A B C D E F G J K L M N K SEATING PLANE M N E G F J D 0.25 (0.010) M T A 11 –B– 10X P 0.010 (0.25) 1 M B M 10 20X D 0.010 (0.25) M T A B S J S F R X 45 _ C –T– 18X G High–Speed CMOS Logic Data DL129 — Rev 6 K SEATING PLANE M T B M M DW SUFFIX PLASTIC SOIC PACKAGE CASE 751D–04 ISSUE E –A– 20 20 PL 0.25 (0.010) 20 PL INCHES MIN MAX 1.010 1.070 0.240 0.260 0.150 0.180 0.015 0.022 0.050 BSC 0.050 0.070 0.100 BSC 0.008 0.015 0.110 0.140 0.300 BSC 0_ 15 _ 0.020 0.040 MILLIMETERS MIN MAX 25.66 27.17 6.10 6.60 3.81 4.57 0.39 0.55 1.27 BSC 1.27 1.77 2.54 BSC 0.21 0.38 2.80 3.55 7.62 BSC 0_ 15_ 0.51 1.01 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.150 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 12.65 12.95 7.40 7.60 2.35 2.65 0.35 0.49 0.50 0.90 1.27 BSC 0.25 0.32 0.10 0.25 0_ 7_ 10.05 10.55 0.25 0.75 INCHES MIN MAX 0.499 0.510 0.292 0.299 0.093 0.104 0.014 0.019 0.020 0.035 0.050 BSC 0.010 0.012 0.004 0.009 0_ 7_ 0.395 0.415 0.010 0.029 M 5 MOTOROLA MC54/74HCT374A OUTLINE DIMENSIONS SD SUFFIX PLASTIC SSOP PACKAGE CASE 940C–03 ISSUE B K REF 0.12 (0.005) 20X 20 L/2 T U M S V 0.25 (0.010) S N M 11 N B L F DETAIL E PIN 1 IDENT 1 10 ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K –U– A –V– 0.20 (0.008) J T U M J1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION/INTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF K DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR INTRUSION SHALL NOT REDUCE DIMENSION K BY MORE THAN 0.07 (0.002) AT LEAST MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–. K1 S DIM A B C D F G H J J1 K K1 L M SECTION N–N 0.076 (0.003) –T– SEATING PLANE –W– C D G DETAIL E H 20X 0.15 (0.006) T U DT SUFFIX PLASTIC TSSOP PACKAGE CASE 948E–02 ISSUE A K REF 0.10 (0.004) S M T U S V S ÍÍÍÍ ÍÍÍÍ ÍÍÍÍ K K1 2X L/2 20 11 J J1 B –U– L PIN 1 IDENT SECTION N–N 1 10 0.25 (0.010) N 0.15 (0.006) T U S N F DETAIL E –W– C D G H DETAIL E 0.100 (0.004) –T– SEATING INCHES MIN MAX 0.278 0.288 0.205 0.212 0.068 0.078 0.002 0.008 0.024 0.037 0.026 BSC 0.023 0.030 0.003 0.008 0.003 0.006 0.010 0.015 0.010 0.013 0.301 0.311 0_ 8_ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–. M A –V– MILLIMETERS MIN MAX 7.07 7.33 5.20 5.38 1.73 1.99 0.05 0.21 0.63 0.95 0.65 BSC 0.59 0.75 0.09 0.20 0.09 0.16 0.25 0.38 0.25 0.33 7.65 7.90 0_ 8_ DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 6.40 6.60 4.30 4.50 ––– 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.27 0.37 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.252 0.260 0.169 0.177 ––– 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.011 0.015 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ PLANE MOTOROLA 6 High–Speed CMOS Logic Data DL129 — Rev 6 MC54/74HCT374A Motorola reserves the right to make changes without further notice to any products herein. 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