MOTOROLA MCM63F733ATQ11

MOTOROLA
Order this document
by MCM63F733A/D
SEMICONDUCTOR TECHNICAL DATA
Advance Information
MCM63F733A
128K x 32 Bit Flow–Through
BurstRAM Synchronous
Fast Static RAM
The MCM63F733A is a 4M–bit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the PowerPC and
other high performance microprocessors. It is organized as 128K words of 32
bits each, fabricated with high performance silicon gate CMOS technology.
This device integrates input registers, a 2–bit address counter, and high speed
SRAM onto a single monolithic circuit for reduced parts count in cache data
RAM applications. Synchronous design allows precise cycle control with the
use of an external clock (K). CMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability.
Addresses (SA), data inputs (DQx), and all control signals except output
enable (G) and Linear Burst Order (LBO) are clock (K) controlled through
positive–edge–triggered noninverting registers.
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst
addresses can be generated internally by the MCM63F733A (burst sequence
operates in linear or interleaved mode dependent upon state of LBO) and controlled by the burst address advance (ADV) input pin.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
Synchronous byte write (SBx), synchronous global write (SGW), and synchronous write enable (SW) are provided to allow writes to either individual bytes or
to all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls
DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte
writes SBx are asserted with SW. All bytes are written if either SGW is asserted
or if all SBx and SW are asserted.
For read cycles, a flow–through SRAM allows output data to simply flow freely
from the memory array.
The MCM63F733A operates from a 3.3 V core power supply and all outputs
operate on a 2.5 V or 3.3 V power supply. All inputs and outputs are JEDEC
Standard JESD8–5 compatible.
TQ PACKAGE
TQFP
CASE 983A–01
• MCM63F733A–10 = 10 ns Access/13 ns Cycle (75 MHz)
MCM63F733A–11 = 11 ns Access/15 ns Cycle (66 MHz)
• 3.3 V + 10% / – 5% Core, Power Supply, 2.5 V or 3.3 V I/O Supply
• ADSP, ADSC, and ADV Burst Control Pins
• Selectable Burst Sequencing Order (Linear/Interleaved)
• Internally Self–Timed Write Cycle
• Byte Write and Global Write Control
• Single–Cycle Deselect
• Sleep Mode (ZZ)
• 100–Pin TQFP Package
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
REV 2
3/20/98

Motorola, Inc. 1998
MOTOROLA
FAST SRAM
MCM63F733A
1
FUNCTIONAL BLOCK DIAGRAM
LBO
ADV
K
ADSC
BURST
COUNTER
K2
2
17
128K x 32 ARRAY
CLR
ADSP
2
SA
SA1
SA0
ADDRESS
REGISTER
17
15
SGW
SW
SBa
SBb
WRITE
REGISTER
a
32
32
WRITE
REGISTER
b
4
SBc
SBd
WRITE
REGISTER
c
DATA–IN
REGISTER
K
WRITE
REGISTER
d
K2
SE1
SE2
SE3
G
MCM63F733A
2
ENABLE
REGISTER
DQa – DQd
MOTOROLA FAST SRAM
SA
SA
SE1
SE2
SBd
SBc
SBb
SBa
SE3
VDD
VSS
K
SGW
SW
G
ADSC
ADSP
ADV
SA
SA
PIN ASSIGNMENT
100 99 98 97 9695 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
10
71
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 3738 39 40 41 42 43 44 4546 47 48 49 50
NC
DQb
DQb
VDDQ
VSS
DQb
DQb
DQb
DQb
VSS
VDDQ
DQb
DQb
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
DQa
DQa
VSS
VDDQ
DQa
DQa
NC
LBO
SA
SA
SA
SA
SA1
SA0
NC
NC
VSS
VDD
NC
NC
SA
SA
SA
SA
SA
SA
SA
NC
DQc
DQc
VDDQ
VSS
DQc
DQc
DQc
DQc
VSS
VDDQ
DQc
DQc
NC
VDD
NC
VSS
DQd
DQd
VDDQ
VSS
DQd
DQd
DQd
DQd
VSS
VDDQ
DQd
DQd
NC
MOTOROLA FAST SRAM
MCM63F733A
3
PIN DESCRIPTIONS
Pin Locations
Symbol
Type
85
ADSC
Input
Synchronous Address Status Controller: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
READ, WRITE, or chip deselect.
84
ADSP
Input
Synchronous Address Status Processor: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
new READ, WRITE, or chip deselect (exception — chip deselect does
not occur when ADSP is asserted and SE1 is high).
83
ADV
Input
Synchronous Address Advance: Increments address count in
accordance with counter type selected (linear/interleaved).
DQx
I/O
86
G
Input
Asynchronous Output Enable Input.
89
K
Input
Clock: This signal registers the address, data in, and all control signals
except G, LBO, and ZZ.
31
LBO
Input
Linear Burst Order Input: This pin may be left floating; it will default as
interleaved.
Low — linear burst counter (68K/PowerPC).
High — interleaved burst counter (486/i960/Pentium).
32, 33, 34, 35, 44, 45, 46,
47, 48, 49, 50, 81, 82, 99, 100
SA
Input
Synchronous Address Inputs: These inputs are registered and must
meet setup and hold times.
36, 37
SA1, SA0
Input
Synchronous Address Inputs: These pins must be wired to the two
LSBs of the address bus for proper burst operation. These inputs are
registered and must meet setup and hold times.
93, 94, 95, 96
(a) (b) (c) (d)
SBx
Input
Synchronous Byte Write Inputs: “x” refers to the byte being written
(byte a, b, c, d). SGW overrides SBx.
98
SE1
Input
Synchronous Chip Enable: Active low to enable chip.
Negated high — blocks ADSP or deselects chip when ADSC is
asserted.
97
SE2
Input
Synchronous Chip Enable: Active high for depth expansion.
92
SE3
Input
Synchronous Chip Enable: Active low for depth expansion.
88
SGW
Input
Synchronous Global Write: This signal writes all bytes regardless of the
status of the SBx and SW signals. If only byte write signals SBx are
being used, tie this pin high.
87
SW
Input
Synchronous Write: This signal writes only those bytes that have been
selected using the byte write SBx pins. If only byte write signals SBx
are being used, tie this pin low.
64
ZZ
Input
Sleep Mode: This active high asynchronous signal places the RAM into
the lowest power mode. The ZZ pin disables the RAMs internal clock
when placed in this mode. When ZZ is negated, the RAM remains in
low power mode until it is commanded to READ or WRITE. Data
integrity is maintained upon returning to normal operation.
15, 41, 65, 91
VDD
Supply
Core Power Supply.
4, 11, 20, 27, 54, 61, 70, 77
VDDQ
Supply
I/O Power Supply.
5, 10, 17, 21, 26, 40,
55, 60, 67, 71, 76, 90
VSS
Supply
Ground.
14, 16, 38, 39, 42, 43, 66
NC
—
(a) 51, 52, 53, 56, 57, 58, 59, 62, 63
(b) 68, 69, 72, 73, 74, 75, 78, 79, 80
(c) 1, 2, 3, 6, 7, 8, 9, 12, 13
(d) 18, 19, 22, 23, 24, 25, 28, 29, 30
MCM63F733A
4
Description
Synchronous Data I/O: “x” refers to the byte being read or written
(byte a, b, c, d).
No Connection: There is no connection to the chip.
MOTOROLA FAST SRAM
TRUTH TABLE (See Notes 1 through 5)
Address
Used
SE1
SE2
SE3
ADSP
ADSC
ADV
G3
DQx
Write 2, 4
Deselect
None
1
X
X
X
0
X
X
High–Z
X
Deselect
None
0
X
1
0
X
X
X
High–Z
X
Deselect
None
0
0
X
0
X
X
X
High–Z
X
Deselect
None
X
X
1
1
0
X
X
High–Z
X
Deselect
None
X
0
X
1
0
X
X
High–Z
X
Begin Read
External
0
1
0
0
X
X
X
High–Z
X
Begin Read
External
0
1
0
1
0
X
X
High–Z
READ
Continue Read
Next
X
X
X
1
1
0
1
High–Z
READ
Continue Read
Next
X
X
X
1
1
0
0
DQ
READ
Continue Read
Next
1
X
X
X
1
0
1
High–Z
READ
Continue Read
Next
1
X
X
X
1
0
0
DQ
READ
Suspend Read
Current
X
X
X
1
1
1
1
High–Z
READ
Suspend Read
Current
X
X
X
1
1
1
0
DQ
READ
Suspend Read
Current
1
X
X
X
1
1
1
High–Z
READ
Suspend Read
Current
1
X
X
X
1
1
0
DQ
READ
Begin Write
Next Cycle
External
0
1
0
1
0
X
X
High–Z
WRITE
Continue Write
Next
X
X
X
1
1
0
X
High–Z
WRITE
Continue Write
Next
1
X
X
X
1
0
X
High–Z
WRITE
Suspend Write
Current
X
X
X
1
1
1
X
High–Z
WRITE
Suspend Write
Current
1
X
X
X
1
1
X
High–Z
WRITE
NOTES:
1. X = Don’t Care. 1 = logic high. 0 = logic low.
2. Write is defined as either 1) any SBx and SW low, or 2) SGW is low.
3. G is an asynchronous signal and is not sampled by the clock K. G drives the bus immediately (tGLQX) following G going low.
4. On write cycles that follow read cycles, G must be negated prior to the start of the write cycle to ensure proper write data setup times.
G must also remain negated at the completion of the write cycle to ensure proper write data hold times.
ASYNCHRONOUS TRUTH TABLE
Operation
ZZ
G
I/O Status
Read
L
L
Data Out (DQx)
Read
L
H
High–Z
Write
L
X
High–Z
Deselected
L
X
High–Z
Selected
H
X
High–Z
4th Address (Internal)
LINEAR BURST ADDRESS TABLE (LBO = VSS)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X10
X . . . X11
X . . . X00
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X00
X . . . X01
X . . . X10
MOTOROLA FAST SRAM
MCM63F733A
5
INTERLEAVED BURST ADDRESS TABLE (LBO = VDD)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
4th Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X00
X . . . X11
X . . . X10
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X10
X . . . X01
X . . . X00
WRITE TRUTH TABLE
Cycle Type
SGW
SW
SBa
SBb
SBc
SBd
Read
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write Byte a
H
L
L
H
H
H
Write Byte b
H
L
H
L
H
H
Write Byte c
H
L
H
H
L
H
Write Byte d
H
L
H
H
H
L
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
ABSOLUTE MAXIMUM RATINGS (See Note 1)
Rating
Symbol
Value
Unit
VDD
– 0.5 to + 4.6
V
VDDQ
VSS – 0.5 to VDD
V
2
Vin, Vout
– 0.5 to VDD + 0.5
V
2
Input Voltage (Three–State I/O)
VIT
– 0.5 to VDDQ + 0.5
V
2
Output Current (per I/O)
Iout
± 20
mA
Package Power Dissipation
PD
1.2
W
Tbias
– 10 to + 85
°C
Tstg
– 55 to + 125
°C
Power Supply Voltage
I/O Supply Voltage
Input Voltage Relative to VSS for
Any Pin Except VDD
Temperature Under Bias
Storage Temperature
Notes
This device contains circuitry to protect the
inputs against damage due to high static voltages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maximum rated voltages to this high–impedance
circuit.
3
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. This is a steady–state DC parameter that is in effect after the power supply has
achieved its nominal operating level. Power sequencing is not necessary.
3. Power dissipation capability is dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
PACKAGE THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Notes
RθJA
40
25
°C/W
1, 2
Junction to Board (Bottom)
RθJB
17
°C/W
3
Junction to Case (Top)
RθJC
9
°C/W
4
Junction to Ambient (@ 200 lfm)
Single–Layer Board
Four–Layer Board
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883
Method 1012.1).
MCM63F733A
6
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS: 2.5 V I/O Supply (Voltages Referenced to VSS = 0 V)
Symbol
Min
Typ
Max
Unit
VDD
3.135
3.3
3.6
V
I/O Supply Voltage
VDDQ
2.375
2.5
2.9
V
Input Low Voltage
VIL
– 0.3
—
0.7
V
Input High Voltage
VIH
1.7
—
VDD + 0.3
V
Input High Voltage (I/O Pins)
VIH2
1.7
—
VDDQ + 0.3
V
Output Low Voltage (IOL = 2 mA)
VOL
—
—
0.7
V
Output High Voltage (IOH = – 2 mA)
VOH
1.7
—
—
V
Max
Unit
Parameter
Supply Voltage
RECOMMENDED OPERATING CONDITIONS: 3.3 V I/O Supply (Voltages Referenced to VSS = 0 V)
Parameter
Supply Voltage
Symbol
Min
Typ
VDD
3.135
3.3
3.6
V
I/O Supply Voltage
VDDQ
3.135
3.3
VDD
V
Input Low Voltage
VIL
– 0.5
—
0.8
V
Input High Voltage
VIH
2
—
VDD + 0.5
V
Input High Voltage (I/O Pins)
VIH2
2
—
VDDQ + 0.5
V
Output Low Voltage (IOL = 8 mA)
VOL
—
—
0.4
V
Output High Voltage (IOH = – 4 mA)
VOH
2.4
—
—
V
VIH
VSS
VSS – 1.0 V
20% tKHKH (MIN)
Figure 1. Undershoot Voltage
MOTOROLA FAST SRAM
MCM63F733A
7
SUPPLY CURRENTS
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Input Leakage Current (0 V ≤ Vin ≤ VDD)
Ilkg(I)
—
—
±1
µA
1, 2
Output Leakage Current (0 V ≤ Vin ≤ VDDQ)
Ilkg(O)
—
—
±1
µA
IDDA
—
—
TBD
mA
3, 4, 5
ISB2
—
—
TBD
mA
6, 8
IZZ
—
—
2
mA
2, 7, 8
TTL Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at TTL Levels)
ISB3
—
—
TBD
mA
6, 9
Clock Running (Device Deselected,
Freq = Max, VDD = Max, All Inputs
Toggling at CMOS Levels)
MCM63F733A–10
MCM63F733A–11
ISB4
—
—
TBD
mA
3, 4,
5, 6, 8
Static Clock Running (Device Deselected,
Freq = Max, VDD = Max, All Inputs
Static at TTL Levels)
MCM63F733A–10
MCM63F733A–11
ISB5
—
—
TBD
mA
6, 9
AC Supply Current (Device Selected,
All Outputs Open, Freq = Max)
Includes VDD Only
MCM63F733A–10
MCM63F733A–11
CMOS Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at CMOS Levels)
Sleep Mode Supply Current (Sleep Mode, Freq = Max,
VDD = Max, All Other Inputs Static at CMOS Levels,
ZZ ≥ VDD – 0.2 V)
NOTES:
1. LBO pin has an internal pullup and will exhibit leakage currents of ± 5 µA.
2. ZZ pin has an internal pulldown and will exhibit leakage currents of ± 5 µA.
3. Reference AC Operating Conditions and Characteristics for input and timing.
4. All addresses transition simultaneously low (LSB) then high (MSB).
5. Data states are all zero.
6. Device is deselected as defined by the Truth Table.
7. Device in Sleep Mode as defined by the Asynchronous Truth Table.
8. CMOS levels for I/Os are VIT ≤ VSS + 0.2 V or ≥ VDDQ – 0.2 V. CMOS levels for other inputs are Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V.
9. TTL levels for I/Os are VIT ≤ VIL or ≥ VIH2. TTL levels for other inputs are Vin ≤ VIL or ≥ VIH.
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 0 to 70°C, Periodically Sampled Rather Than 100% Tested)
Symbol
Min
Typ
Max
Unit
Input Capacitance
Cin
—
4
5
pF
Input/Output Capacitance
CI/O
—
7
8
pF
Parameter
MCM63F733A
8
MOTOROLA FAST SRAM
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
Input Timing Measurement Reference Level . . . . . . . . . . . . . . 1.25 V
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 2.5 V
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . 1.0 V/ns (20 to 80%)
Output Timing Reference Level . . . . . . . . . . . . . . . . . . . . . . . . . 1.25 V
Output Load . . . . . . . . . . . . . . See Figure 2 Unless Otherwise Noted
READ/WRITE CYCLE TIMING (See Notes 1 through 4)
MCM63F733A–10
75 MHz
MCM63F733A–11
66 MHz
Symbol
S b l
Min
Max
Min
Max
Unit
U i
Cycle Time
tKHKH
13
—
15
—
ns
Clock High Pulse Width
tKHKL
5.2
—
6
—
ns
Clock Low Pulse Width
tKLKH
5.2
—
6
—
ns
Clock Access Time
tKHQV
—
10
—
11
ns
Output Enable to Output Valid
tGLQV
—
3.8
—
3.8
ns
Clock High to Output Active
tKHQX1
0
—
0
—
ns
5, 6
Clock High to Output Change
tKHQX2
1.5
—
1.5
—
ns
6
Output Enable to Output Active
tGLQX
0
—
0
—
ns
5, 6
Output Disable to Q High–Z
tGHQZ
—
3.8
—
3.8
ns
5, 6
Clock High to Q High–Z
tKHQZ
1.5
3.8
1.5
3.8
ns
5, 6
Parameter
P
Setup Times:
Address
ADSP, ADSC, ADV
Data In
Write
Chip Enable
tADKH
tADSKH
tDVKH
tWVKH
tEVKH
2
—
2
—
ns
Hold Times:
Address
ADSP, ADSC, ADV
Data In
Write
Chip Enable
tKHAX
tKHADSX
tKHDX
tKHWX
tKHEX
0.5
—
0.5
—
ns
Sleep Mode Standby
tZZS
—
2x
tKHKH
—
2x
tKHKH
ns
Sleep Mode Recovery
tZZREC
2x
tKHKH
—
2x
tKHKH
—
ns
tZZQZ
—
15
—
15
ns
Sleep Mode High to Q High–Z
Notes
N
NOTES:
1. Write is defined as either any SBx and SW low or SGW is low. Chip Enable is defined as SE1 low, SE2 high, and SE3 low whenever ADSP
or ADSC is asserted.
2. All read and write cycle timings are referenced from K or G.
3. G is a don’t care after write cycle begins. To prevent bus contention, G should be negated prior to start of write cycle.
4. In order to reduce test correlation issues and to reduce the effects of application specific input edge rate variations on correlation between
data sheet parameters and actual system performance, FSRAM AC parametric specifications are always specified at VDDQ/2. In some
design exercises, it is desirable to evaluate timing using other reference levels. Since the maximum test input edge rate is known and is given
in the AC Test Conditions section of the data sheet as 1 V/ns, one can easily interpolate timing values to other reference levels.
5. This parameter is sampled and not 100% tested.
6. Measured at ± 200 mV from steady state.
MOTOROLA FAST SRAM
MCM63F733A
9
OUTPUT
Z0 = 50 Ω
RL = 50 Ω
1.25 V
Figure 2. AC Test Load
2400
OUTPUT
CL
CLOCK ACCESS TIME DELAY (ps)
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
20
40
60
80
100
LUMPED CAPACITANCE, CL (pF)
Figure 3. Lumped Capacitive Load and Typical Derating Curve
MCM63F733A
10
MOTOROLA FAST SRAM
2.9
2.5
PULL–UP
I (mA) MIN
I (mA) MAX
– 0.5
– 38
– 105
0
– 38
– 105
0.8
– 38
– 105
1.25
– 30
– 83
1.5
– 27
– 75
2.3
0
– 40
2.7
0
– 15
2.9
0
0
VOLTAGE (V)
2.3
VOLTAGE (V)
1.25
0.8
0
0
– 40
CURRENT (mA)
– 105
– 80
– 40
CURRENT (mA)
– 120
(a) Pull–Up for VDDQ = 2.5 V
3.6
3.135
2.8
VOLTAGE (V)
I (mA) MIN
I (mA) MAX
– 0.5
– 40
– 120
0
– 40
– 120
1.4
– 40
– 120
1.65
– 37
– 108
2.0
– 28
– 81
3.135
0
– 20
3.6
0
0
VOLTAGE (V)
PULL–UP
1.65
1.4
0
0
(b) Pull–Up: VDDQ = 3.3 V
VDD
PULL–DOWN
I (mA) MIN
I (mA) MAX
– 0.5
0
0
0
0
0
0.4
10
20
0.8
20
40
1.25
31
63
1.6
40
80
2.8
40
80
3.2
40
80
3.4
40
80
1.6
VOLTAGE (V)
VOLTAGE (V)
1.25
0.3
0
0
40
CURRENT (mA)
80
(c) Pull–Down
Figure 4. Typical Output Buffer Characteristics
MOTOROLA FAST SRAM
MCM63F733A
11
MCM63F733A
12
MOTOROLA FAST SRAM
Q(n)
A
SINGLE READ
tKHQX1
Q(A)
tKHQV
B
tKHKL
NOTE: E low = SE2 high and SE3 low.
W low = SGW low and/or SW and SBx low.
DESELECTED
tKHQZ
DQx
G
W
E
SE1
ADV
ADSC
ADSP
SA
K
tKHKH
tKHQX2
Q(B)
Q(B+2)
BURST READ
Q(B+1)
tGHQZ
Q(B+3)
BURST WRAPS AROUND
tKLKH
Q(B)
ADSP, SA
SE2, SE3
IGNORED
READ/WRITE CYCLES
D(C)
C
D(C+2)
BURST WRITE
D(C+1)
D(C+3)
SINGLE READ
tGLQX
tGLQV
D
Q(D)
NORMAL OPERATION
tZZREC
NO READS OR
WRITES ALLOWED
MOTOROLA FAST SRAM
IDD
tZZS
ZZ
DQ
G
W
E
ADV
ADDR
ADS
K
NORMAL OPERATION
tZZQZ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
NOTE: ADS low = ADSC low or ADSP low.
ADS high = both ADSC, ADSP high.
E low = SE1 low, SE2 high, SE3 low.
IZZ (max) specifications will not be met if inputs toggle.
I ZZ
IN SLEEP MODE
NO NEW READS OR
WRITES ALLOWED
SLEEP MODE TIMING
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
MCM63F733A
13
APPLICATION INFORMATION
SLEEP MODE
A sleep mode feature, the ZZ pin, has been implemented
on the MCM63F733A. It allows the system designer to place
the RAM in the lowest possible power condition by asserting
ZZ. The sleep mode timing diagram shows the different
modes of operation: Normal Operation, No READ/WRITE
Allowed, and Sleep Mode. Each mode has its own set of
constraints and conditions that are allowed.
Normal Operation: All inputs must meet setup and hold
times prior to sleep and t ZZREC nanoseconds after recovering from sleep. Clock (K) must also meet cycle, high,
and low times during these periods. Two cycles prior to sleep,
initiation of either a read or write operation is not allowed.
No READ/WRITE: During the period of time just prior to
sleep and during recovery from sleep, the assertion of either
ADSC, ADSP, or any write signal is not allowed. If a write
operation occurs during these periods, the memory array
may be corrupted. Validity of data out from the RAM can not
be guaranteed immediately after ZZ is asserted (prior to
being in sleep).
Sleep Mode: The RAM automatically deselects itself. The
RAM disconnects its internal clock buffer. The external clock
may continue to run without impacting the RAMs sleep current (IZZ). All inputs are allowed to toggle — the RAM will not
be selected and perform any reads or writes. However, if
inputs toggle, the IZZ (max) specification will not be met.
NON–BURST SYNCHRONOUS OPERATION
Although this BurstRAM has been designed for PowerPC
— and other high end MPU–based systems, these SRAMs
can be used in other high speed L2 cache or memory
applications that do not require the burst address feature.
Most L2 caches designed with a synchronous interface can
make use of the MCM63F733A. The burst counter feature of
the BurstRAM can be disabled, and the SRAM can be configured to act upon a continuous stream of addresses. See
Figure 5.
CONTROL PIN TIE VALUES EXAMPLE (H ≥ VIH, L ≤ VIL)
Non–Burst
ADSP
ADSC
ADV
SE1
SE2
LBO
Sync Non–Burst,
Pipelined SRAM
H
L
H
L
H
X
NOTE: Although X is specified in the table as a don’t care, the pin
must be tied either high or low.
K
ADDR
A
B
C
D
E
F
G
D(E)
D(F)
D(G)
H
SE3
W
G
DQ
Q(A)
Q(B)
Q(C)
Q(D)
READS
D(H)
WRITES
Figure 5. Example Configuration as Non–Burst Synchronous SRAM
ORDERING INFORMATION
(Order by Full Part Number)
MCM
63F733A XX
X
X
Motorola Memory Prefix
Blank = Trays, R = Tape and Reel
Part Number
Speed (10 = 10 ns, 11 = 11 ns)
Package (TQ = TQFP)
Full Part Numbers — MCM63F733ATQ10
MCM63F733ATQ10R
MCM63F733A
14
MCM63F733ATQ11
MCM63F733ATQ11R
MOTOROLA FAST SRAM
PACKAGE DIMENSIONS
TQ PACKAGE
100–PIN TQFP
CASE 983A–01
4X
e
0.20 (0.008) H A–B D
2X 30 TIPS
e/2
0.20 (0.008) C A–B D
–D–
80
51
50
81
B
E/2
–A–
–X–
B
X=A, B, OR D
–B–
VIEW Y
E1 E
BASE
METAL
PLATING
E1/2
31
100
1
b1
c
30
D1/2
ÇÇÇÇ
ÉÉÉ
ÇÇÇÇ
ÉÉÉ
c1
b
D/2
D1
D
0.13 (0.005)
M
C A–B
S
D
S
SECTION B–B
2X 20 TIPS
0.20 (0.008) C A–B D
A
q
2
0.10 (0.004) C
–H–
–C–
SEATING
PLANE
q
3
VIEW AB
0.05 (0.002)
S
S
q
1
0.25 (0.010)
R2
A2
A1
R1
L2
L
L1
VIEW AB
GAGE PLANE
q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DATUMS –A–, –B– AND –D– TO BE DETERMINED
AT DATUM PLANE –H–.
5. DIMENSIONS D AND E TO BE DETERMINED AT
SEATING PLANE –C–.
6. DIMENSIONS D1 AND E1 DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS 0.25 (0.010) PER SIDE. DIMENSIONS D1 AND
B1 DO INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE –H–.
7. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. DAMBAR PROTRUSION SHALL
NOT CAUSE THE b DIMENSION TO EXCEED 0.45
(0.018).
DIM
A
A1
A2
b
b1
c
c1
D
D1
E
E1
e
L
L1
L2
S
R1
R2
q
q
q
q
MOTOROLA FAST SRAM
1
2
3
MILLIMETERS
MIN
MAX
–––
1.60
0.05
0.15
1.35
1.45
0.22
0.38
0.22
0.33
0.09
0.20
0.09
0.16
22.00 BSC
20.00 BSC
16.00 BSC
14.00 BSC
0.65 BSC
0.45
0.75
1.00 REF
0.50 REF
0.20
–––
0.08
–––
0.08
0.20
0_
7_
0_
–––
11 _
13 _
11 _
13 _
INCHES
MIN
MAX
–––
0.063
0.002
0.006
0.053
0.057
0.009
0.015
0.009
0.013
0.004
0.008
0.004
0.006
0.866 BSC
0.787 BSC
0.630 BSC
0.551 BSC
0.026 BSC
0.018
0.030
0.039 REF
0.020 REF
0.008
–––
0.003
–––
0.003
0.008
0_
7_
0_
–––
11 _
13 _
11 _
13 _
MCM63F733A
15
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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CUSTOMER FOCUS CENTER: 1-800-521-6274
MCM63F733A
16
◊
MOTOROLAMCM63F733A/D
FAST SRAM