Order this document by MMDF3N06HD/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products Motorola Preferred Device DUAL TMOS POWER MOSFET 60 VOLTS RDS(on) = 100 mW Dual HDTMOS are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. • • • • • • • Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO–8 Package Provided D G CASE 751–05, Style 11 SO–8 S D G Source–1 1 8 Drain–1 Gate–1 2 7 Drain–1 Source–2 3 6 Drain–2 Gate–2 4 5 Drain–2 Top View S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Symbol Value Unit VDSS VGS 60 Vdc ± 20 Vdc 3.3 16.5 Adc Apk 1.7 Adc 2.0 Watts ID IDM IS Source Current — Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 60 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 15 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds PD TJ, Tstg EAS – 55 to 150 RθJA 62.5 °C/W TL 260 °C °C mJ 105 DEVICE MARKING D3N06 ORDERING INFORMATION Device MMDF3N06HDR2 Reel Size Tape Width Quantity 13″ 12 mm embossed tape 2500 units (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint. This document contains information on a new product. Specifications and information herein are subject to change without notice. HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. TMOS Motorola Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MMDF3N06HD ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 60 — — — — 0.001 0.05 1.0 25 — 12 100 1.0 — — — — 67.5 82.5 100 200 — 7.5 — Ciss — 442 618 Coss — 97.6 137 Crss — 24.4 34.2 td(on) — 10.6 22.1 tr — 15.9 31.8 td(off) — 23.8 47.6 Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0 Vdc) (VDS = 48 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc µAdc nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) VGS(th) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.3 Adc) (VGS = 4.5 Vdc, ID = 2.5 Adc) RDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc) Vdc gFS mW Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, Vdc VGS = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance pF SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 30 Vdc, Vd ID = 3.3 3 3 Adc, Ad VGS = 4.5 4 5 Vdc, Vdc RG = 30 Ω)) Fall Time Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 15 Vdc, Vd ID = 3.0 3 0 Adc, Ad VGS = 10 Vdc Vdc, RG = 9.1 Ω)) Fall Time Gate Charge (See Figure 8) ((VDS = 30 Vdc, Vd , ID = 3.3 3 3 Adc, Ad , VGS = 10 Vdc) tf — 14.7 29.4 td(on) — 7.0 14 tr — 4.8 9.6 td(off) — 32.4 64.8 tf — 14.2 28.4 QT — 14.5 29 Q1 — 1.8 — Q2 — 3.5 — Q3 — 3.75 — — — 0.78 0.65 1.2 — trr — 27.9 — ta — 23 — tb — 4.9 — QRR — 0.038 — ns ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage VSD (IS = 1.7 Adc, VGS = 0 Vdc) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 1 1.7 7 Adc Adc, VGS = 0 Vdc, Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge Vdc ns µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data MMDF3N06HD TYPICAL ELECTRICAL CHARACTERISTICS 6.0 5.0 3.3 V 3.1 V 3.5 V 3.7 V 3.9 V 4.5 V 4.3 V 4.0 4.1 V 2.9 V 3.0 2.7 V 2.0 2.5 V 1.0 0 RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS) VDS ≥ 10 V TJ = 25°C I D , DRAIN CURRENT (AMPS) VGS = 10 V 6.0 V 5.0 100°C 4.0 25°C 3.0 TJ = –55°C 2.0 1.0 2.3 V 2.1 V 0 0 0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.8 1.6 2.0 2.25 2.5 2.75 3.0 Figure 2. Transfer Characteristics 0.25 0.2 0.15 0.1 0.05 0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 10 3.25 3.5 4.5 5.0 0.09 TJ = 25°C 0.085 VGS = 4.5 V 0.08 0.075 0.07 10 V 0.065 0.06 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance versus Gate–to–Source Voltage Figure 4. On–Resistance versus Drain Current and Gate Voltage 1.8 1000 VGS = 0 V VGS = 10 V ID = 1.5 A 1.4 I DSS , LEAKAGE (nA) RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) 2.0 Figure 1. On–Region Characteristics ID = 3.0 A TJ = 25°C 1.6 1.75 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 0.3 2.0 1.5 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS) I D , DRAIN CURRENT (AMPS) 6.0 1.2 1.0 0.8 0.6 0.4 100 TJ = 125°C 10 100°C 1.0 25°C 0.2 0 – 50 0 – 25 0 25 50 75 100 125 150 0 5.0 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 5. On–Resistance Variation with Temperature Figure 6. Drain–to–Source Leakage Current versus Voltage Motorola TMOS Power MOSFET Transistor Device Data 30 3 MMDF3N06HD POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (∆t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain–gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG – VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turn–on and turn–off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG – VGSP)] td(off) = RG Ciss In (VGG/VGSP) The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off–state condition when calculating td(on) and is read at a voltage corresponding to the on–state when calculating td(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. DRAIN–TO–SOURCE DIODE CHARACTERISTICS The switching characteristics of a MOSFET body diode are very important in systems using it as a freewheeling or commutating diode. Of particular interest are the reverse recovery characteristics which play a major role in determining switching losses, radiated noise, EMI and RFI. System switching losses are largely due to the nature of the body diode itself. The body diode is a minority carrier device, therefore it has a finite reverse recovery time, trr, due to the storage of minority carrier charge, QRR, as shown in the typical reverse recovery wave form of Figure 11. It is this stored charge that, when cleared from the diode, passes through a potential and defines an energy loss. Obviously, repeatedly forcing the diode through reverse recovery further increases switching losses. Therefore, one would like a diode with short trr and low QRR specifications to minimize these losses. The abruptness of diode reverse recovery effects the amount of radiated noise, voltage spikes, and current ringing. The mechanisms at work are finite irremovable circuit parasitic inductances and capacitances acted upon by high di/dts. The diode’s negative di/dt during ta is directly controlled by the device clearing the stored charge. However, the positive di/dt during tb is an uncontrollable diode characteristic and is usually the culprit that induces current ringing. Therefore, when comparing diodes, the ratio of tb/ta serves as a good indicator of recovery abruptness and thus gives a comparative estimate of probable noise generated. A ratio of 1 is considered ideal and values less than 0.5 are considered snappy. Compared to Motorola standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter trr), have less stored charge and a softer reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through reverse recovery at a higher di/dt than a standard cell MOSFET diode without increasing the current ringing or the noise generated. In addition, power dissipation incurred from switching the diode will be less due to the shorter recovery time and lower switching losses. Standard Cell Density trr I S , SOURCE CURRENT High Cell Density trr tb ta t, TIME Figure 7. Reverse Recovery Time (trr) 4 Motorola TMOS Power MOSFET Transistor Device Data MMDF3N06HD SAFE OPERATING AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance – General Data and Its Use.” Switching between the off–state and the on–state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded, and that the transition time (tr, tf) does not exceed 10 µs. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) – TC)/(RθJC). A power MOSFET designated E–FET can be safely used in switching circuits with unclamped inductive loads. For reli- TJ = 25°C C, CAPACITANCE (pF) 1000 800 Crss 600 Ciss 400 200 Coss 0 –10 –5.0 5.0 20 0 10 15 25 VGS VDS VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 30 12 10 9.0 VGS 20 8.0 7.0 6.0 5.0 Q1 4.0 3.0 1.0 0 Q3 0 2.0 10 ID = 3.0 A TJ = 25°C VDS 4.0 6.0 8.0 12 10 Qg, TOTAL GATE CHARGE (nC) 0 14 16 Figure 9. Gate–to–Source and Drain–to–Source Voltage versus Total Charge 2.5 1000 VDD = 30 V ID = 3.0 A VGS = 10 V TJ = 25°C IS, SOURCE CURRENT (AMPS) t, TIME (ns) Q2 2.0 Figure 8. Capacitance Variation 100 30 QT 11 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Ciss VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 1200 able operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non–linearly with an increase of peak current in avalanche and peak junction temperature. Although many E–FETs can withstand the stress of drain– to–source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 9). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. td(off) tf tr td(on) 10 TJ = 25°C VGS = 0 V 2.0 1.5 1.0 0.5 0 1.0 1.0 10 RG, GATE RESISTANCE (OHMS) 100 Figure 10. Resistive Switching Time Variation versus Gate Resistance Motorola TMOS Power MOSFET Transistor Device Data 0.5 0.6 0.65 0.7 0.75 0.55 VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) 0.8 Figure 11. Diode Forward Voltage versus Current 5 MMDF3N06HD 10 120 VGS = 12 V SINGLE PULSE TA = 25°C EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) I D , DRAIN CURRENT (AMPS) 100 1.0 ms 10 ms 1.0 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc ID = 3.0 A 100 80 60 40 20 0.01 0.1 1.0 0 10 100 25 45 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 65 85 105 125 145 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Rated Forward Biased Safe Operating Area Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature TYPICAL ELECTRICAL CHARACTERISTICS Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0106 Ω Chip Junction 0.01 0.0253 F 0.0431 Ω 0.1406 F 0.1643 Ω 0.5064 F 0.3507 Ω 2.9468 F 0.4302 Ω 177.14 F SINGLE PULSE Ambient 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 14. Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 15. Diode Reverse Recovery Waveform 6 Motorola TMOS Power MOSFET Transistor Device Data MMDF3N06HD INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process. 0.060 1.52 0.275 7.0 0.155 4.0 0.024 0.6 0.050 1.270 inches mm SO–8 POWER DISSIPATION The power dissipation of the SO–8 is a function of the input pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SO–8 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 2.0 Watts. PD = 150°C – 25°C = 2.0 Watts 62.5°C/W The 62.5°C/W for the SO–8 package assumes the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 2.0 Watts using the footprint shown. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using board material such as Thermal Clad, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. Motorola TMOS Power MOSFET Transistor Device Data • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. 7 MMDF3N06HD TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 12 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” DESIRED CURVE FOR HIGH MASS ASSEMBLIES line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 –189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 6 VENT STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 “SPIKE” “SOAK” 170°C STEP 7 COOLING 205° TO 219°C PEAK AT SOLDER JOINT 160°C 150°C 150°C 100°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 16. Typical Solder Heating Profile 8 Motorola TMOS Power MOSFET Transistor Device Data MMDF3N06HD PACKAGE DIMENSIONS –A– M 1 4 R 4X 0.25 (0.010) –B– X 45 _ B M 5 P 8 NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. J M_ C F G –T– K SEATING PLANE 8X D 0.25 (0.010) M T B S A S CASE 751–05 SO–8 ISSUE P Motorola TMOS Power MOSFET Transistor Device Data DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 STYLE 11: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 9 MMDF3N06HD Motorola reserves the right to make changes without further notice to any products herein. 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