Order this document by MPIC2111/D SEMICONDUCTOR TECHNICAL DATA Power Products Division The MPIC2111 is a high voltage, high speed, power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half– bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross–conduction. Internal deadtime is provided to avoid shoot–through in the output half–bridge. The floating channel can be used to drive an N–channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts. • • • • • • • • • • HALF–BRIDGE DRIVER Floating Channel Designed for Bootstrap Operation 8 Fully Operational to +600 V 1 Tolerant to Negative Transient Voltage dV/dt Immune P SUFFIX PLASTIC PACKAGE CASE 626–05 Gate Drive Supply Range from 10 to 20 V Undervoltage Lockout for Both Channels CMOS Schmitt–triggered Inputs with Pull–down Matched Propagation Delay for Both Channels Internally Set Deadtime 8 High Side Output in Phase with Input 1 PRODUCT SUMMARY VOFFSET 600 V MAX IO+/– 200 mA/420 mA VOUT 10 – 20 V ton/off (typical) 130 & 90 ns Deadtime (typical) 700 ns D SUFFIX PLASTIC PACKAGE CASE 751–05 (SO–8) ORDERING INFORMATION Device Package MPIC2111D SOIC MPIC2111P PDIP PIN CONNECTIONS (TOP VIEW) VCC 1 8 VB VCC 1 8 VB IN 2 7 HO IN 2 7 HO COM 3 6 VS COM 3 6 VS LO 4 5 8 LEADS DIP MPIC2111P LO 4 5 8 LEAD SOIC MPIC2111D This document contains information on a new product. Specifications and information herein are subject to change without notice. REV 1 Power Motorola Motorola, Inc. 1996 Products Division Advanced Data 1 MPIC2111 SIMPLIFIED BLOCK DIAGRAM VB UV DETECT HV LEVEL SHIFT DEAD TIME PULSE FILTER R R S Q HO VS PULSE GEN IN UV DETECT VCC LO DEAD TIME COM ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Rating High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Allowable Offset Supply Voltage Transient Symbol Min Max Unit VB VS VHO VCC VLO VIN –0.3 VB–25 VS–0.3 –0.3 –0.3 –0.3 625 VB+0.3 VB+0.3 25 VCC+0.3 VCC+0.3 VDC dVS/dt – 50 V/ns *Package Power Dissipation @ TC ≤ +25°C (8 Lead DIP) (8 Lead SOIC) PD – – – 1.0 0.625 Watt Thermal Resistance, Junction to Ambient (8 Lead DIP) (8 Lead SOIC) RθJA – – 125 200 °C/W Tj, Tstg –55 150 °C TL – 260 °C Operating and Storage Temperature Lead Temperature for Soldering Purposes, 10 seconds RECOMMENDED OPERATING CONDITIONS The Input/Output logic timing Diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15 V differential. High Side Floating Supply Absolute Voltage VB VS+10 VS+20 High Side Floating Supply Offset Voltage VS Note 1 600 High Side Floating Output Voltage VHO VS VB Low Side Fixed Supply Voltage VCC 10 20 Low Side Output Voltage VLO 0 VCC Logic Input Voltage VIN 0 VCC –40 125 Ambient Temperature TA Note 1: Logic operational for VS of –5 to +600 V. Logic state held for VS of –5 V to –VBS. 2 V mA °C Motorola Power Products Division Advanced Data MPIC2111 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Characteristic Min Typ Max Unit STATIC ELECTRICAL CHARACTERISTICS VBIAS (VCC, VBS) = 15 V unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Logic “1” Input Voltage for HO & Logic “0” Input Voltage for LO @ VCC = 10 V VIH 6.4 – – Logic “1” Input Voltage for HO & Logic “0” Input Voltage for LO @ VCC = 15 V VIH 9.5 – – Logic “1” Input Voltage for HO & Logic “0” Input Voltage for LO @ VCC = 20 V VIH 12.6 – – Logic “0” Input Voltage for HO & Logic “1” Input Voltage for LO @ VCC = 10 V VIL – – 3.8 Logic “0” Input Voltage for HO & Logic “1” Input Voltage for LO @ VCC = 15 V VIL – – 6.0 Logic “0” Input Voltage for HO & Logic “1” Input Voltage for LO @ VCC = 20 V VIL – – 8.3 High Level Output Voltage, VBIAS–VO @ IO = 0 A VOH – – 100 Low Level Output Voltage, VO @ IO = 0 A VOL – – 100 Offset Supply Leakage Current @ VB = VS = 600 V ILK – – 50 Quiescent VBS Supply Current @ VIN = 0 V or VCC IQBS – 50 – Quiescent VCC Supply Current @ VIN = 0 V or VCC IQCC – 70 – Logic “1” Input Bias Current @ VIN = 15 V IIN+ – 20 40 Logic “0” Input Bias Current @ VIN = 0 V IIN– – – 1.0 VBS Supply Undervoltage Positive Going Threshold VBSUV+ – 8.5 – VBS Supply Undervoltage Negative Going Threshold VBSUV– – 8.2 – VCC Supply Undervoltage Positive Going Threshold VCCUV+ – 8.6 – VCC Supply Undervoltage Negative Going Threshold VCCUV– – 8.2 – Output High Short Circuit Pulsed Current @ VOUT = 0 V, PW ≤ 10 µs IO+ 200 250 – Output Low Short Circuit Pulsed Current @ VOUT = 15 V, PW ≤ 10 µs IO– 420 500 – Turn–On Propagation Delay @ VS = 0 V ton – 850 – Turn–Off Propagation Delay @ VS = 600 V toff – 150 – Turn–On Rise Time @ CL = 1000 pF tr – 80 – Turn–Off Fall Time @ CL = 1000 pF tf – 40 – Deadtime, LS Turn–Off to HS Turn–On & HS Turn–Off to LS Turn–On DT – 700 – Delay Matching, HS & LS Turn–On/Off MT – 30 – VDC mV µA V mA DYNAMIC ELECTRICAL CHARACTERISTICS VBIAS (VCC, VBS) = 15 V unless otherwise specified ns TYPICAL CONNECTION 10 TO 600 V VCC IN VCC VB IN HO COM VS TO LOAD LO Motorola Power Products Division Advanced Data 3 MPIC2111 LEAD DEFINITIONS Symbol Lead Description IN Logic Input for High Side and Low Side Gate Driver Outputs (HO & LO), In Phase with HO VB High Side Floating Supply HO High Side Gate Drive Output VS High Side Floating Supply Return VCC Low Side Supply LO Low Side Gate Drive Output COM Logic and Low Side Return IN (LO) IN 50% 50% IN (HO) tf tr HO ton toff 90% LO HO LO Figure 1. Input / Output Timing Diagram 10% 90% 10% Figure 2. Switching Time Waveform Definitions 50% 50% IN 90% HO 10% DT LO 90% 10% Figure 3. Deadtime Waveform Definitions 4 Motorola Power Products Division Advanced Data MPIC2111 PACKAGE DIMENSIONS 8 NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 5 –B– 1 4 DIM A B C D F G H J K L M N F –A– NOTE 2 L C J –T– N SEATING PLANE D M K G H 0.13 (0.005) M T A B M M CASE 626–05 ISSUE K –A– M X 45 _ B 1 4 R 4X 0.25 (0.010) –B– M_ C F G –T– K SEATING PLANE 8X D 0.25 (0.010) M T B S A S CASE 751–05 ISSUE P Motorola Power Products Division Advanced Data STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC ––– 10_ 0.030 0.040 AC IN DC + IN DC – IN AC IN GROUND OUTPUT AUXILIARY VCC NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. J M 5 P 8 MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC ––– 10_ 0.76 1.01 DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 5 MPIC2111 Motorola reserves the right to make changes without further notice to any products herein. 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