ONSEMI BAT54LT1

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by BAT54LT1/D
SEMICONDUCTOR TECHNICAL DATA
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Motorola Preferred Device
• Extremely Fast Switching Speed
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
• Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
3
CATHODE
1
ANODE
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
200
2.0
mW
mW/°C
Forward Current (DC)
IF
200 Max
mA
Junction Temperature
TJ
125 Max
°C
Tstg
– 55 to +150
°C
Rating
Storage Temperature Range
DEVICE MARKING
BAT54LT1 = JV3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)R
30
—
—
Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
—
7.6
10
pF
Reverse Leakage (VR = 25 V)
IR
—
0.5
2.0
µAdc
Forward Voltage (IF = 0.1 mAdc)
VF
—
0.22
0.24
Vdc
Forward Voltage (IF = 30 mAdc)
VF
—
0.41
0.5
Vdc
Forward Voltage (IF = 100 mAdc)
VF
—
0.52
1.0
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr
—
—
5.0
ns
Forward Voltage (IF = 1.0 mAdc)
VF
—
0.29
0.32
Vdc
Forward Voltage (IF = 10 mAdc)
VF
—
0.35
0.40
Vdc
Forward Current (DC)
IF
—
—
200
mAdc
Repetitive Peak Forward Current
IFRM
—
—
300
mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s)
IFSM
—
—
600
mAdc
Characteristic
Reverse Breakdown Voltage (IR = 10 µA)
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
5–1
BAT54LT1
820 Ω
+10 V
2k
0.1 µF
tr
IF
100 µH
tp
0.1 µF
IF
t
trr
10%
t
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
1000
IR , REVERSE CURRENT (µA)
IF, FORWARD CURRENT (mA)
TA = 150°C
1 50°C
10
1 25°C
1.0
85°C
25°C
0.1
0.0
– 40°C
100
TA = 125°C
10
1.0
TA = 85°C
0.1
0.01
– 55°C
TA = 25°C
0.001
0.1
0.2
0.3
0.4
0.5
0
0.6
5
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
25
30
Figure 3. Leakage Current
C T , TOTAL CAPACITANCE (pF)
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
5–2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BAT54LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–3
BAT54LT1
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
B S
1
V
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
K
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
J
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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5–4
◊
BAT54LT1/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data