ONSEMI MC14008BCP

MC14008B
4-Bit Full Adder
The MC14008B 4–bit full adder is constructed with MOS
P–channel and N–channel enhancement mode devices in a single
monolithic structure. This device consists of four full adders with fast
internal look–ahead carry output. It is useful in binary addition and
other arithmetic applications. The fast parallel carry output bit allows
high–speed operation when used with other adders in a system.
•
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•
•
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http://onsemi.com
Look–Ahead Carry Output
Diode Protection on All Inputs
All Outputs Buffered
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
Pin–for–Pin Replacement for CD4008B
MARKING
DIAGRAMS
16
PDIP–16
P SUFFIX
CASE 648
MC14008BCP
AWLYYWW
1
16
SOIC–16
D SUFFIX
CASE 751B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Parameter
Value
Unit
– 0.5 to +18.0
V
– 0.5 to VDD + 0.5
V
Input or Output Current
(DC or Transient) per Pin
± 10
mA
PD
Power Dissipation,
per Package (Note 3.)
500
mW
TA
Ambient Temperature Range
– 55 to +125
°C
Tstg
Storage Temperature Range
– 65 to +150
°C
TL
Lead Temperature
(8–Second Soldering)
260
°C
Symbol
VDD
Vin, Vout
Iin, Iout
DC Supply Voltage Range
Input or Output Voltage Range
(DC or Transient)
2. Maximum Ratings are those values beyond which damage to the device
may occur.
3. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS
(Vin or Vout)
VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either VSS or VDD). Unused outputs must be left open.
v
v
 Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 3
1
14008B
AWLYWW
1
16
SOEIAJ–16
F SUFFIX
CASE 966
MC14008B
AWLYWW
1
A
= Assembly Location
WL or L = Wafer Lot
YY or Y = Year
WW or W = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MC14008BCP
PDIP–16
2000/Box
MC14008BDR2
SOIC–16
2500/Tape & Reel
SOEIAJ–16
See Note 1.
MC14008BF
1. For ordering information on the EIAJ version of
the SOIC packages, please contact your local
ON Semiconductor representative.
Publication Order Number:
MC14008B/D
MC14008B
TRUTH TABLE
(One Stage)
Cin
B
A
Cout
S
0
0
0
0
0
0
1
1
0
1
0
1
0
0
0
1
0
1
1
0
1
1
1
1
0
0
1
1
0
1
0
1
0
1
1
1
1
0
0
1
PIN ASSIGNMENT
A4
1
16
VDD
B3
2
15
B4
A3
3
14
Cout
B2
4
13
S4
A2
5
12
S3
B1
6
11
S2
A1
7
10
S1
VSS
8
9
Cin
BLOCK DIAGRAM
HIGH–SPEED
PARALLEL CARRY
B4 15
A4
1
B3
2
A3
3
B2
4
A2
5
B1
6
A1
7
Cin
9
14 Cout
ADDER
4
13 S4
C4
ADDER
3
12 S3
C3
ADDER
2
11 S2
C2
ADDER
1
10 S1
VDD = PIN 16
VSS = PIN 8
http://onsemi.com
2
MC14008B
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ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
Characteristic
Symbol
– 55_C
25_C
125_C
VDD
Vdc
Min
Max
Min
Typ (4.)
Max
Min
Max
Unit
Output Voltage
Vin = VDD or 0
“0” Level
VOL
5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
0.05
0.05
0.05
Vdc
Vin = 0 or VDD
“1” Level
VOH
5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.95
9.95
14.95
—
—
—
Vdc
Input Voltage
“0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
1.5
3.0
4.0
(VO = 0.5 or 4.5 Vdc) “1” Level
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3.5
7.0
11
—
—
—
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1.7
– 0.36
– 0.9
– 2.4
—
—
—
—
IOL
5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.36
0.9
2.4
—
—
—
mAdc
Input Current
Iin
15
—
± 0.1
—
± 0.00001
± 0.1
—
± 1.0
µAdc
Input Capacitance
(Vin = 0)
Cin
—
—
—
—
5.0
7.5
—
—
pF
Quiescent Current
(Per Package)
IDD
5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
150
300
600
µAdc
IT
5.0
10
15
Output Drive Current
(VOH = 2.5 Vdc)
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
(VOL = 0.4 Vdc)
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
Vdc
IOH
Source
Sink
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
Vdc
mAdc
IT = (1.7 µA/kHz) f + IDD
IT = (3.4 µA/kHz) f + IDD
IT = (5.0 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
5. The formulas given are for the typical characteristics only at 25_C.
6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.005.
http://onsemi.com
3
µAdc
MC14008B
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SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25_C)
Characteristic
Symbol
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
Min
Typ (8.)
Max
5.0
10
15
—
—
—
100
50
40
200
100
80
Unit
ns
tTLH,
tTHL
Propagation Delay Time
Sum in to Sum Out
tPLH, tPHL = (1.7 ns/pF) CL + 315 ns
tPLH, tPHL = (0.66 ns/pF) CL + 127 ns
tPLH, tPHL = (0.5 ns/pF) CL + 90 ns
Sum In to Carry Out
tPLH, tPHL = (1.7 ns/pF) CL + 220 ns
tPLH, tPHL = (0.66 ns/pF) CL + 112 ns
tPLH, tPHL = (0.5 ns/pF) CL + 85 ns
Carry In to Sum Out
tPLH, tPHL = (1.7 ns/pF) CL + 290 ns
tPLH, tPHL = (0.66 ns/pF) CL + 122 ns
tPLH, tPHL = (0.5 ns/pF) CL + 90 ns
Carry In to Carry Out
tPLH, tPHL = (1.7 ns/pF) CL + 85 ns
tPLH, tPHL = (0.66 ns/pF) CL + 42 ns
tPLH, tPHL = (0.5 ns/pF) CL + 30 ns
VDD
Vdc
tPLH, tPHL
ns
5.0
10
15
—
—
—
400
160
115
800
320
230
5.0
10
15
—
—
—
305
145
110
610
290
220
5.0
10
15
—
—
—
375
155
115
750
310
230
5.0
10
15
—
—
—
170
75
55
340
150
110
7. The formulas given are for the typical characteristics only at 25_C.
8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
VDD = – VGS
Vout
VDD = VGS
16
B4
A4
B3
A3
B2
A2
S4
B1
A1
Cin
S1
8
16
S3
S2
IOH
Cout
VSS
Vout
EXTERNAL
POWER
SUPPLY
B4
A4
B3
A3
B2
A2
S4
B1
A1
Cin
S1
8
Figure 1. Typical Source Current
Characteristics Test Circuit
S3
S2
IOL
Cout
VSS
EXTERNAL
POWER
SUPPLY
Figure 2. Typical Sink Current
Characteristics Test Circuit
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4
MC14008B
VDD
16
20 ns
Vin
20 ns
90%
10%
VDD
VSS
PULSE
GENERATOR
B4
A4
B3
A3
B2
A2
S4
B1
A1
Cin
S1
8
S3
S2
CL
CL
CL
Cout
CL
CL
VSS
IDD
500 µF
Figure 3. Dynamic Power Dissipation Test Circuit and Waveform
VDD
16
B4
A4
B3
A3
B2
A2
B1
A1
PULSE
GENERATOR
Cin
8
S4
S3
S2
CL
S1
CL
CL
Cout
CL
CL
VSS
IDD
20 ns
Cin
20 ns
VDD
90%
50%
10%
VSS
tPHL
tPLH
VOH
90%
50%
10%
S1 – S4
VOL
tTHL
tTLH
VOH
Cout
50%
VOL
tPLH
tPHL
Figure 4. Switching Time Test Circuit and Waveforms
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5
MC14008B
Cout
B4
S4
A4
B3
S3
A3
B2
S2
A2
B1
S1
A1
Cin
Figure 5. Logic Diagram
TYPICAL APPLICATION
WORD A + B INPUTS
A1
Cin
S1
B4
CHIP
1
Cout
S4
A1
Cin
S1
B4
CHIP
2
Cout
S4
A1
Cin
S1
B4
CHIP
3
Cout
S4
A1
Cin
B4
CHIP
4
S1
SUM OUTPUTS
Calculation of 16–bit adder speed:
tP total = tP (Sum to Carry) + tP (Carry to Sum) + 2 tP (Carry to Carry)
The guaranteed 16–bit adder speed at 10 V, 25°C, CL = 50 pF is:
tp total = 290 + 310 + 300 = 900 ns
Figure 6. Using the MC14008B in a 16–Bit Adder Configuration
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6
Cout
S4
MC14008B
PACKAGE DIMENSIONS
PDIP–16
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
–A–
16
9
1
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
F
C
DIM
A
B
C
D
F
G
H
J
K
L
M
S
L
S
–T–
SEATING
PLANE
K
H
G
D
M
J
16 PL
0.25 (0.010)
M
T A
M
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
–B–
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
MILLIMETERS
MIN
MAX
18.80
19.55
6.35
6.85
3.69
4.44
0.39
0.53
1.02
1.77
2.54 BSC
1.27 BSC
0.21
0.38
2.80
3.30
7.50
7.74
0_
10 _
0.51
1.01
SOIC–16
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
–A–
–T–
INCHES
MIN
MAX
0.740
0.770
0.250
0.270
0.145
0.175
0.015
0.021
0.040
0.70
0.100 BSC
0.050 BSC
0.008
0.015
0.110
0.130
0.295
0.305
0_
10 _
0.020
0.040
M
T B
S
A
S
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7
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
MC14008B
PACKAGE DIMENSIONS
SOEIAJ–16
F SUFFIX
PLASTIC EIAJ SOIC PACKAGE
CASE 966–01
ISSUE O
16
LE
9
Q1
M_
E HE
1
L
8
DETAIL P
Z
D
e
VIEW P
A
A1
b
0.13 (0.005)
c
M
0.10 (0.004)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH OR PROTRUSIONS AND ARE
MEASURED AT THE PARTING LINE. MOLD FLASH
OR PROTRUSIONS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
MILLIMETERS
MIN
MAX
–––
2.05
0.05
0.20
0.35
0.50
0.18
0.27
9.90
10.50
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 _
0_
0.70
0.90
–––
0.78
INCHES
MIN
MAX
–––
0.081
0.002
0.008
0.014
0.020
0.007
0.011
0.390
0.413
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 _
0_
0.028
0.035
–––
0.031
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MC14008B/D